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2.1 W Power Field Effect Transistors (FET) 23

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
DMN6013LFG-13 by Diodes Incorporated

DMN6013LFG-13

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.1 W; Maximum Feedback Capacitance (Crss): 132 pF; Maximum Pulsed Drain Current (IDM): 58.3 A;

56.8 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

10.3 A

.013 ohm

METAL-OXIDE SEMICONDUCTOR

132 pF

S-PDSO-N5

e3

1

1

5

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

N-CHANNEL

2.1 W

58.3 A

YES

MATTE TIN

NO LEAD

DUAL

SWITCHING

SILICON

NVF3055L108T3G by Onsemi

NVF3055L108T3G

Onsemi

NVF3055L108T3G by Onsemi is a N-CHANNEL FET with 3A max drain current and 2.1W power dissipation. Ideal for power applications, it operates at up to 175°C and features surface mount configuration for easy installation in various electronic devices.

SINGLE

3 A

3 A

METAL-OXIDE SEMICONDUCTOR

e3

1

1

175 Cel

260

N-CHANNEL

2.1 W

FET General Purpose Power

YES

MATTE TIN

30

NTF3055L108T3LF by Onsemi

NTF3055L108T3LF

Onsemi

NTF3055L108T3LF by Onsemi is a Power FET with 60V DS Breakdown Voltage, 9A IDM, and 0.12 ohm RDS(on). Ideal for SWITCHING applications, this N-CHANNEL transistor operates in ENHANCEMENT MODE with a max power dissipation of 2.1W. It comes in a PLASTIC/EPOXY package style with GULL WING terminals.

74 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

3 A

3 A

.12 ohm

METAL-OXIDE SEMICONDUCTOR

TO-261AA

R-PDSO-G4

e0

3

1

4

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

N-CHANNEL

2.1 W

9 A

Not Qualified

FET General Purpose Power

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

NTHD2102PT1 by Onsemi

NTHD2102PT1

Onsemi

NTHD2102PT1 by Onsemi is a P-CHANNEL FET with 2 elements, built-in diode, and 0.058 ohm RDS(on). Ideal for switching applications with 3.4A max drain current and 8V min DS breakdown voltage. Features small outline package style and operates in enhancement mode.

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

8 V

3.4 A

3.4 A

.058 ohm

METAL-OXIDE SEMICONDUCTOR

R-XDSO-C8

e0

2

8

ENHANCEMENT MODE

UNSPECIFIED

RECTANGULAR

SMALL OUTLINE

235

P-CHANNEL

2.1 W

4.6 A

Not Qualified

Other Transistors

YES

TIN LEAD

C BEND

DUAL

SWITCHING

SILICON

NTF3055L108T3G by Onsemi

NTF3055L108T3G

Onsemi

NTF3055L108T3G by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a 60V DS Breakdown Voltage, 9A Max Pulsed Drain Current, and 0.12 ohm Drain-Source On Resistance. This MOSFET operates in ENHANCEMENT MODE and has a max power dissipation of 2.1W, making it ideal for high-power switching circuits.

74 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

3 A

3 A

.12 ohm

METAL-OXIDE SEMICONDUCTOR

TO-261AA

R-PDSO-G4

e3

1

1

4

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

2.1 W

9 A

Not Qualified

FET General Purpose Power

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

NTF3055L108T3LFG by Onsemi

NTF3055L108T3LFG

Onsemi

NTF3055L108T3LFG by Onsemi is a Power FET with 60V DS Breakdown Voltage, 9A IDM, and 0.12 ohm RDS(on). Ideal for switching applications in enhancement mode operation. Features include built-in diode, small outline package style, and dual terminal position.

74 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

3 A

3 A

.12 ohm

METAL-OXIDE SEMICONDUCTOR

TO-261AA

R-PDSO-G4

e3

3

1

4

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

2.1 W

9 A

Not Qualified

FET General Purpose Power

YES

TIN

GULL WING

DUAL

SWITCHING

SILICON

NTF3055L175T1G by Onsemi

NTF3055L175T1G

Onsemi

NTF3055L175T1G by Onsemi is a Power FET with 60V DS Breakdown Voltage, 2A Max Drain Current, and 0.175 ohm Max RDS(on). Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with 6A IDM and 65mJ EAS. Package style is SMALL OUTLINE with GULL WING terminals.

LOGIC LEVEL COMPATIBLE

65 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

2 A

2 A

.175 ohm

METAL-OXIDE SEMICONDUCTOR

TO-261AA

R-PDSO-G4

e3

1

1

4

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

2.1 W

6 A

Not Qualified

FET General Purpose Power

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

NTF3055L175T3G by Onsemi

NTF3055L175T3G

Onsemi

NTF3055L175T3G by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a 60V DS Breakdown Voltage, 6A Max Pulsed Drain Current, and 0.175 ohm Max Drain-Source Resistance. Ideal for use in ENHANCEMENT MODE operations with a max temp of 175 °C.

LOGIC LEVEL COMPATIBLE

65 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

2 A

2 A

.175 ohm

METAL-OXIDE SEMICONDUCTOR

TO-261AA

R-PDSO-G4

e3

3

1

4

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

2.1 W

6 A

Not Qualified

FET General Purpose Power

YES

TIN

GULL WING

DUAL

SWITCHING

SILICON

NTHD2102PT1G by Onsemi

NTHD2102PT1G

Onsemi

NTHD2102PT1G by Onsemi is a P-CHANNEL FET with 8V DS Breakdown Voltage, 3.4A ID, and 0.058 ohm RDS(on). Ideal for SWITCHING applications, it features 2 elements with built-in diode in a small outline package for enhanced performance.

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

8 V

3.4 A

3.4 A

.058 ohm

METAL-OXIDE SEMICONDUCTOR

R-XDSO-C8

e3

1

2

8

ENHANCEMENT MODE

UNSPECIFIED

RECTANGULAR

SMALL OUTLINE

260

P-CHANNEL

2.1 W

4.6 A

Not Qualified

Other Transistors

YES

TIN

C BEND

DUAL

30

SWITCHING

SILICON

DMT3008LFDF-13 by Diodes Incorporated

DMT3008LFDF-13

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.1 W; Operating Mode: ENHANCEMENT MODE; Avalanche Energy Rating (EAS): 3.2 mJ;

3.2 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

10.4 A

.01 ohm

METAL-OXIDE SEMICONDUCTOR

53 pF

S-PDSO-N6

e4

1

1

6

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

N-CHANNEL

2.1 W

70 A

MIL-STD-202

YES

NICKEL PALLADIUM GOLD

NO LEAD

DUAL

30

SWITCHING

SILICON

DMT3008LFDF-7 by Diodes Incorporated

DMT3008LFDF-7

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.1 W; Package Style (Meter): SMALL OUTLINE; Terminal Position: DUAL;

3.2 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

10.4 A

.01 ohm

METAL-OXIDE SEMICONDUCTOR

53 pF

S-PDSO-N6

e4

1

1

6

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

N-CHANNEL

2.1 W

70 A

MIL-STD-202

YES

NICKEL PALLADIUM GOLD

NO LEAD

DUAL

30

SWITCHING

SILICON

DMN3008SFGQ-13 by Diodes Incorporated

DMN3008SFGQ-13

Diodes Incorporated

DMN3008SFGQ-13 by Diodes Incorporated is a N-channel Power FET with 30V DS Breakdown Voltage, ideal for switching applications. It features 80A IDM, 101mJ EAS, and 0.0055 ohm RDS(on). Operating in enhancement mode, it has a max temp of 150°C and -55°C min temp. AEC-Q101 compliant for automotive use.

HIGH RELIABILITY

101 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

17.6 A

.0055 ohm

METAL-OXIDE SEMICONDUCTOR

459 pF

S-PDSO-N5

e3

1

5

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

N-CHANNEL

2.1 W

80 A

AEC-Q101

YES

MATTE TIN

NO LEAD

DUAL

SWITCHING

SILICON

DMT3006LFDF-13 by Diodes Incorporated

DMT3006LFDF-13

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.1 W; No. of Elements: 1; Case Connection: DRAIN;

31 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

14.1 A

.007 ohm

METAL-OXIDE SEMICONDUCTOR

72 pF

S-PDSO-N6

e4

1

1

6

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

N-CHANNEL

2.1 W

80 A

MIL-STD-202

YES

NICKEL PALLADIUM GOLD

NO LEAD

DUAL

30

SWITCHING

SILICON

DMNH6042SSD-13 by Diodes Incorporated

DMNH6042SSD-13

Diodes Incorporated

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.1 W; Terminal Form: GULL WING; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

65 mJ

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

60 V

5.3 A

.05 ohm

METAL-OXIDE SEMICONDUCTOR

24 pF

R-PDSO-G8

e3

2

8

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

2.1 W

35 A

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

DMN3009SFG-13 by Diodes Incorporated

DMN3009SFG-13

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.1 W; Minimum Operating Temperature: -55 Cel; Maximum Drain-Source On Resistance: .0055 ohm;

55 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

16 A

.0055 ohm

METAL-OXIDE SEMICONDUCTOR

248 pF

S-PDSO-N8

e3

1

1

8

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

N-CHANNEL

2.1 W

80 A

MIL-STD-202

YES

MATTE TIN

NO LEAD

DUAL

30

SWITCHING

SILICON

DMN3009SFGQ-13 by Diodes Incorporated

DMN3009SFGQ-13

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.1 W; Maximum Operating Temperature: 150 Cel; JESD-609 Code: e3;

55 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

16 A

.0055 ohm

METAL-OXIDE SEMICONDUCTOR

248 pF

S-PDSO-N8

e3

1

8

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

N-CHANNEL

2.1 W

80 A

AEC-Q101; IATF 16949; MIL-STD-202

YES

MATTE TIN

NO LEAD

DUAL

30

SWITCHING

SILICON

DMT3006LFDFQ-7 by Diodes Incorporated

DMT3006LFDFQ-7

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.1 W; Transistor Element Material: SILICON; Minimum Operating Temperature: -55 Cel;

31 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

14.1 A

.007 ohm

METAL-OXIDE SEMICONDUCTOR

72 pF

S-PDSO-N6

e4

1

1

6

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

N-CHANNEL

2.1 W

80 A

AEC-Q101; IATF 16949; MIL-STD-202

YES

NICKEL PALLADIUM GOLD

NO LEAD

DUAL

30

SWITCHING

SILICON

DMT6011LSS-13 by Diodes Incorporated

DMT6011LSS-13

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.1 W; Package Body Material: PLASTIC/EPOXY; Minimum Operating Temperature: -55 Cel;

39.4 mJ

SINGLE WITH BUILT-IN DIODE

60 V

10.6 A

.011 ohm

METAL-OXIDE SEMICONDUCTOR

38 pF

R-PDSO-G8

e3

1

8

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

2.1 W

85 A

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

DMT10H009SSS-13 by Diodes Incorporated

DMT10H009SSS-13

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.1 W; Minimum Operating Temperature: -55 Cel; Terminal Finish: MATTE TIN;

109.4 mJ

SINGLE WITH BUILT-IN DIODE

100 V

12 A

.0092 ohm

METAL-OXIDE SEMICONDUCTOR

13 pF

R-PDSO-G8

e3

1

8

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

2.1 W

100 A

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

DMN4034SSSQ-13 by Diodes Incorporated

DMN4034SSSQ-13

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.1 W; Maximum Pulsed Drain Current (IDM): 36 A; No. of Terminals: 8;

19 mJ

SINGLE WITH BUILT-IN DIODE

40 V

6.5 A

.034 ohm

METAL-OXIDE SEMICONDUCTOR

59 pF

R-PDSO-G8

e3

1

8

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

2.1 W

36 A

AEC-Q101; IATF 16949

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

DMP3045LFVW-7 by Diodes Incorporated

DMP3045LFVW-7

Diodes Incorporated

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.1 W; Package Shape: SQUARE; Maximum Drain-Source On Resistance: .042 ohm;

30.8 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

19.9 A

.042 ohm

METAL-OXIDE SEMICONDUCTOR

74 pF

S-PDSO-F8

e3

1

8

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

P-CHANNEL

2.1 W

76 A

YES

MATTE TIN

FLAT

DUAL

SWITCHING

SILICON

DMP3045LFVW-13 by Diodes Incorporated

DMP3045LFVW-13

Diodes Incorporated

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.1 W; JESD-30 Code: S-PDSO-F8; Package Shape: SQUARE;

30.8 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

19.9 A

.042 ohm

METAL-OXIDE SEMICONDUCTOR

74 pF

S-PDSO-F8

e3

1

8

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

P-CHANNEL

2.1 W

76 A

YES

MATTE TIN

FLAT

DUAL

SWITCHING

SILICON

DMP3045LFVWQ-13 by Diodes Incorporated

DMP3045LFVWQ-13

Diodes Incorporated

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.1 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Transistor Application: SWITCHING;

30.8 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

19.9 A

.042 ohm

METAL-OXIDE SEMICONDUCTOR

74 pF

S-PDSO-F8

e3

1

8

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

P-CHANNEL

2.1 W

76 A

AEC-Q101; IATF 16949

YES

MATTE TIN

FLAT

DUAL

SWITCHING

SILICON