Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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NTP5864NG
Onsemi
NTP5864NG by Onsemi is a Power FET with 60V DS Breakdown Voltage, 252A IDM, and 0.0124 ohm RDS(on). It is an N-CHANNEL transistor in PLASTIC/EPOXY package for high-power applications. Ideal for circuits requiring high current handling and low on-resistance.
80 mJ
DRAIN
SINGLE WITH BUILT-IN DIODE
60 V
63 A
.0124 ohm
METAL-OXIDE SEMICONDUCTOR
TO-220AB
R-PSFM-T3
e3
1
3
ENHANCEMENT MODE
175 Cel
PLASTIC/EPOXY
RECTANGULAR
FLANGE MOUNT
N-CHANNEL
107 W
252 A
Not Qualified
FET General Purpose Power
NO
Tin (Sn)
THROUGH-HOLE
SINGLE
SILICON
NVMFS5844NLT1G
NVMFS5844NLT1G by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 61A Drain Current, and 0.016 ohm RDS(ON). Ideal for power applications in automotive industry due to AEC-Q101 standard compliance.
61 A
.016 ohm
R-PDSO-F5
5
SMALL OUTLINE
260
247 A
AEC-Q101
YES
MATTE TIN
FLAT
DUAL
30
NVMFS5844NLT3G
NVMFS5844NLT3G by Onsemi is a N-channel Power FET with 60V DS breakdown voltage, 61A max drain current, and 0.016 ohm RDS(on). Ideal for power management applications due to its 107W max power dissipation, small outline package style, and -55 to 175°C operating temperature range.
NVMFS5834NLT1G
NVMFS5834NLT1G by Onsemi is a Power FET with 40V DS Breakdown Voltage, 276A IDM, and 0.0136 ohm RDS(on). It is an N-CHANNEL MOSFET in a PLASTIC/EPOXY package ideal for automotive applications due to AEC-Q101 standard compliance.
48 mJ
40 V
75 A
14 A
.0136 ohm
NOT SPECIFIED
276 A
Matte Tin (Sn) - annealed
NVMFS5834NLT3G
NVMFS5834NLT3G by Onsemi is a Power FET with 40V DS Breakdown Voltage, 276A IDM, and 0.0136 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance. Enhances performance in power management systems with its high current handling capabilities.
NVD5890NLT4G
NVD5890NLT4G by Onsemi is an N-channel Power FET with a 40V DS breakdown voltage and 123A max drain current. Ideal for switching applications, it features a built-in diode, 320mJ avalanche energy rating, and 0.0055 ohm max on-resistance. Suitable for high-power operations in automotive electronics due to AEC-Q101 compliance.
320 mJ
123 A
.0055 ohm
R-PSSO-G2
2
400 A
GULL WING
SWITCHING
NVMFD5873NLT1G
NVMFD5873NLT1G by Onsemi is an N-channel Power FET with 60V DS breakdown voltage, 190A pulsed drain current, and 0.013 ohm max on-resistance. It is used in automotive applications due to its AEC-Q101 reference standard compliance and 175°C max operating temperature.
40 mJ
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
58 A
10 A
.013 ohm
R-PDSO-F6
6
190 A
NVMFD5873NLWFT1G
NVMFD5873NLWFT1G by Onsemi is an N-CHANNEL Power FET with 60V DS Breakdown Voltage, 190A IDM, and 0.013 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance.
TIN
NVMFS5834NLWFT1G
NVMFS5834NLWFT1G by Onsemi is a Power FET with 40V DS Breakdown Voltage, 276A IDM, and 0.0136 ohm RDS(on). It is an N-CHANNEL MOSFET in a PLASTIC/EPOXY package ideal for automotive applications due to AEC-Q101 compliance.
NVMFS5834NLWFT3G
NVMFS5834NLWFT3G by Onsemi is a Power FET with 40V DS Breakdown Voltage, 276A IDM, and 0.0136 ohm RDS(on). It is an N-CHANNEL MOSFET in PLASTIC/EPOXY package ideal for automotive applications due to AEC-Q101 standard compliance.
NVMFS5844NLWFT1G
NVMFS5844NLWFT1G by Onsemi is a N-CHANNEL FET with 61A max drain current and 107W power dissipation. Ideal for high-power applications, it operates at up to 175°C and features surface mount configuration for easy installation.
NVMFS5844NLWFT3G
NVMFS5844NLWFT3G by Onsemi is a single N-channel power FET with 61A max drain current and 107W max power dissipation. Utilizes metal-oxide semiconductor technology, operates up to 175°C, ideal for high-power applications in surface-mount configurations.
NTMFS5834NLT1G
NTMFS5834NLT1G by Onsemi is a Power FET with N-CHANNEL polarity, 40V DS breakdown voltage, and 276A pulsed drain current. Ideal for applications requiring high power dissipation in a small outline package, such as power supplies and motor control systems.
13 A
150 Cel
NTMFS5844NLT1G
NTMFS5844NLT1G by Onsemi is a N-CHANNEL Power FET with 60V DS Breakdown Voltage, 243A IDM, and 0.016 ohm RDS(on). Ideal for power management applications due to its 107W Pdiss, EAS of 48mJ, and operating temp up to 150°C. Suitable for surface mount designs with small outline package style.
11 A
243 A
IPD80N06S3-09
Infineon Technologies
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 107 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; JESD-609 Code: e3;
ULTRA LOW RESISTANCE
170 mJ
55 V
80 A
.0084 ohm
TO-252AA
320 A
NVD4804NT4G
NVD4804NT4G by Onsemi is a single N-channel power FET with built-in diode for switching applications. It features a max pulsed drain current of 230A, avalanche energy rating of 450mJ, and max power dissipation of 107W. Ideal for high-power switching circuits in automotive and industrial electronics due to its robust design and enhanced performance capabilities.
450 mJ
30 V
124 A
14.5 A
-55 Cel
230 A
IPB04N03LA
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 107 W; Package Style (Meter): SMALL OUTLINE; Qualification: Not Qualified;
LOGIC LEVEL COMPATIBLE
290 mJ
25 V
.0064 ohm
TO-263AB
385 A
IPI04N03LA
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 107 W; No. of Terminals: 3; Maximum Pulsed Drain Current (IDM): 385 A;
.0067 ohm
TO-262AA
R-PSIP-T3
IN-LINE
IPP04N03LA
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 107 W; No. of Elements: 1; Maximum Drain Current (ID): 80 A;
SUM40N10-30-E3
Vishay Intertechnology
Vishay Intertechnology's SUM40N10-30-E3 is a N-channel power FET with 100V DS breakdown voltage and 40A max drain current. Ideal for switching applications, it features a built-in diode, 0.03 ohm max on-resistance, and operates in enhancement mode. Suitable for surface mount assembly with a max power dissipation of 107W at 175°C.
100 V
40 A
.03 ohm
MATTE TIN OVER NICKEL
IPB04N03LB
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 107 W; Minimum DS Breakdown Voltage: 30 V; Package Body Material: PLASTIC/EPOXY;
270 mJ
.0051 ohm
IPP04N03LBG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 107 W; Terminal Position: SINGLE; Additional Features: LOGIC LEVEL COMPATIBLE;
.0054 ohm
IPB77N06S3-09
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 107 W; Maximum Drain Current (ID): 77 A; No. of Elements: 1;
AVALANCHE RATED
77 A
.0088 ohm
245
308 A
IPP77N06S3-09
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 107 W; Maximum Drain Current (ID): 77 A; Avalanche Energy Rating (EAS): 170 mJ;
.0091 ohm
IPP17N25S3100AKSA1
IPP17N25S3100AKSA1 by Infineon is a N-CHANNEL FET with 250V DS Breakdown Voltage, 68A IDM, and 54mJ EAS. Ideal for power applications due to its 107W Power Dissipation, -55 to 175 °C Operating Temp Range, and 0.1 ohm Drain-Source On Resistance. Suitable for various industries requiring high-power switching capabilities.
54 mJ
250 V
17 A
.1 ohm
23 pF
68 A
FDWS9509L-F085
FDWS9509L-F085 by Onsemi is a P-CHANNEL FET for switching applications. It features a 40V DS breakdown voltage, 65A max drain current, and 0.0153 ohm max on-resistance. With an EAS of 84mJ, it operates in the -55 to 175°C temperature range.
84 mJ
65 A
.0153 ohm
MO-240AA
P-CHANNEL
405 ns
22 ns
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