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1.3 W Power Field Effect Transistors (FET) 13

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
IRLML6402TR by International Rectifier

IRLML6402TR

International Rectifier

IRLML6402TR by International Rectifier is a P-CHANNEL FET with 20V DS Breakdown Voltage, ideal for SWITCHING applications. It features 22A IDM and 0.065 ohm RDS(ON), operating in ENHANCEMENT MODE at up to 150°C. This surface-mount transistor has a built-in diode, making it suitable for various power management tasks.

HIGH RELIABILITY

11 mJ

SINGLE WITH BUILT-IN DIODE

20 V

3.7 A

3.7 A

.065 ohm

METAL-OXIDE SEMICONDUCTOR

TO-236AB

R-PDSO-G3

e0

1

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

P-CHANNEL

1.3 W

22 A

Not Qualified

Other Transistors

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

STC5DNF30V by STMicroelectronics

STC5DNF30V

STMicroelectronics

STC5DNF30V by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a max drain current of 4.5 A, a breakdown voltage of 30 V, and operates at up to 150 °C. Its compact surface mount design ensures versatility in various electronic circuits.

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

30 V

4.5 A

4.5 A

.04 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G8

e4

1

2

8

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

1.3 W

18 A

Not Qualified

FET General Purpose Power

YES

NICKEL PALLADIUM GOLD

GULL WING

DUAL

SWITCHING

SILICON

NTF3055-100T1 by Onsemi

NTF3055-100T1

Onsemi

NTF3055-100T1 by Onsemi is a Power FET with 60V DS Breakdown Voltage, 9A IDM, and 0.11 ohm RDS(on). Ideal for SWITCHING applications, it features an N-CHANNEL configuration in a SMALL OUTLINE package with GULL WING terminals. Operating in ENHANCEMENT MODE, this FET has a max power dissipation of 1.3W at 175°C.

74 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

3 A

3 A

.11 ohm

METAL-OXIDE SEMICONDUCTOR

TO-261AA

R-PDSO-G4

e0

3

1

4

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

N-CHANNEL

1.3 W

9 A

Not Qualified

FET General Purpose Power

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

NTF3055-100T3LF by Onsemi

NTF3055-100T3LF

Onsemi

NTF3055-100T3LF by Onsemi is a Power FET with 60V DS Breakdown Voltage, 9A IDM, and 0.11 ohm RDS(on). Ideal for SWITCHING applications, this N-CHANNEL transistor operates in ENHANCEMENT MODE with a max power dissipation of 1.3W.

74 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

3 A

3 A

.11 ohm

METAL-OXIDE SEMICONDUCTOR

TO-261AA

R-PDSO-G4

e0

3

1

4

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

N-CHANNEL

1.3 W

9 A

Not Qualified

FET General Purpose Power

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

NTF3055-160T3LF by Onsemi

NTF3055-160T3LF

Onsemi

NTF3055-160T3LF by Onsemi is a Power FET with 60V DS Breakdown Voltage, 6A IDM, and 0.16 ohm RDS(on). Ideal for SWITCHING applications, it features an ENHANCEMENT MODE operation in a SMALL OUTLINE package with GULL WING terminals. Operating up to 175 °C, it offers a peak reflow temperature of 235°C.

65 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

2 A

2 A

.16 ohm

METAL-OXIDE SEMICONDUCTOR

TO-261

R-PDSO-G4

e0

1

1

4

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

N-CHANNEL

1.3 W

6 A

Not Qualified

FET General Purpose Power

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

NTF3055L175T1 by Onsemi

NTF3055L175T1

Onsemi

NTF3055L175T1 by Onsemi is a Power FET with 60V DS Breakdown Voltage, 2A Max Drain Current, and 0.175 ohm Max RDS(on). Ideal for switching applications, it features an Enhancement Mode in a small outline package with Gull Wing terminals. Operating at up to 175 °C, it has a built-in diode and can handle pulsed currents up to 6A.

LOGIC LEVEL COMPATIBLE

65 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

2 A

2 A

.175 ohm

METAL-OXIDE SEMICONDUCTOR

TO-261AA

R-PDSO-G4

e0

3

1

4

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

N-CHANNEL

1.3 W

6 A

Not Qualified

FET General Purpose Power

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

NTF3055L175T3LF by Onsemi

NTF3055L175T3LF

Onsemi

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.3 W; Minimum DS Breakdown Voltage: 60 V; Transistor Application: SWITCHING;

LOGIC LEVEL COMPATIBLE

65 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

2 A

2 A

.175 ohm

METAL-OXIDE SEMICONDUCTOR

TO-261AA

R-PDSO-G4

e0

1

1

4

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

N-CHANNEL

1.3 W

6 A

Not Qualified

FET General Purpose Power

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

NTF3055L175T3 by Onsemi

NTF3055L175T3

Onsemi

NTF3055L175T3 by Onsemi is a Power FET with 60V DS Breakdown Voltage, 6A IDM, and 0.175 ohm RDS(on). Ideal for switching applications, it features an Enhancement Mode in a small outline package with Gull Wing terminals. Operating at up to 175 °C, it has a built-in diode and can handle 65mJ EAS.

LOGIC LEVEL COMPATIBLE

65 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

2 A

2 A

.175 ohm

METAL-OXIDE SEMICONDUCTOR

TO-261AA

R-PDSO-G4

e0

1

1

4

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

N-CHANNEL

1.3 W

6 A

Not Qualified

FET General Purpose Power

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

NTHS2101PT1 by Onsemi

NTHS2101PT1

Onsemi

NTHS2101PT1 by Onsemi is a P-CHANNEL FET for SWITCHING applications. It features 8V DS Breakdown Voltage, 5.4A Drain Current, and 0.025 ohm On Resistance. With ENHANCEMENT MODE operation, this transistor has a max power dissipation of 1.3W in a SMALL OUTLINE package style.

LOGIC LEVEL COMPATIBLE

SINGLE WITH BUILT-IN DIODE

8 V

5.4 A

5.4 A

.025 ohm

METAL-OXIDE SEMICONDUCTOR

R-XDSO-C8

e0

1

8

ENHANCEMENT MODE

UNSPECIFIED

RECTANGULAR

SMALL OUTLINE

235

P-CHANNEL

1.3 W

7.5 A

Not Qualified

Other Transistors

YES

TIN LEAD

C BEND

DUAL

SWITCHING

SILICON

NTHS2101PT1G by Onsemi

NTHS2101PT1G

Onsemi

NTHS2101PT1G by Onsemi is a P-CHANNEL FET for SWITCHING applications. Features include 8V DS Breakdown Voltage, 5.4A Drain Current, and 0.025 ohm On Resistance. Ideal for power management in compact devices due to its small outline package and high power dissipation capability of 1.3W.

LOGIC LEVEL COMPATIBLE

SINGLE WITH BUILT-IN DIODE

8 V

5.4 A

5.4 A

.025 ohm

METAL-OXIDE SEMICONDUCTOR

R-XDSO-C8

e3

1

1

8

ENHANCEMENT MODE

UNSPECIFIED

RECTANGULAR

SMALL OUTLINE

260

P-CHANNEL

1.3 W

7.5 A

Not Qualified

Other Transistors

YES

TIN

C BEND

DUAL

30

SWITCHING

SILICON

IRF7350PBF by International Rectifier

IRF7350PBF

International Rectifier

IRF7350PBF by International Rectifier is a Power FET with N-Channel and P-Channel types. It features 100V DS Breakdown Voltage, 8.4A IDM, and 0.21 ohm RDS(on). Ideal for switching applications due to its separate configuration with built-in diode elements.

HIGH RELIABILITY

35 mJ

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

100 V

1.5 A

2.1 A

.21 ohm

METAL-OXIDE SEMICONDUCTOR

MS-012AA

R-PDSO-G8

e3

1

2

8

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL AND P-CHANNEL

1.3 W

8.4 A

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

DMG4435SSS-13 by Diodes Incorporated

DMG4435SSS-13

Diodes Incorporated

DMG4435SSS-13 by Diodes Incorporated is a P-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features 80A IDM, 0.016 ohm RDS(on), and operates in ENHANCEMENT MODE. With a max temp of 150°C, this transistor is surface mountable and has a small outline package style.

SINGLE WITH BUILT-IN DIODE

30 V

7.3 A

7.3 A

.016 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G8

e3

1

1

8

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

P-CHANNEL

1.3 W

80 A

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

DMP3165LQ-13 by Diodes Incorporated

DMP3165LQ-13

Diodes Incorporated

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.3 W; Maximum Pulsed Drain Current (IDM): 13 A; Minimum DS Breakdown Voltage: 30 V;

SINGLE WITH BUILT-IN DIODE

30 V

3.3 A

.09 ohm

METAL-OXIDE SEMICONDUCTOR

35 pF

R-PDSO-G3

e3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

P-CHANNEL

1.3 W

13 A

AEC-Q101; MIL-STD-202

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON