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2 MHz Power Bipolar Junction Transistors (BJT) 13

Power Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Maximum Fall Time (tf) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
BUB323ZT4 by Onsemi

BUB323ZT4

Onsemi

BUB323ZT4 by Onsemi is a NPN power BJT with Darlington configuration, ideal for switching applications. It features a max collector-emitter voltage of 350V, collector current of 10A, and power dissipation of 150W. With a transition frequency of 2MHz, it is suitable for high-power electronic circuits in various industries.

COLLECTOR

10 A

350 V

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

500

R-PSSO-G2

e0

1

1

2

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

NPN

150 W

Not Qualified

Other Transistors

YES

Tin/Lead (Sn/Pb)

GULL WING

SINGLE

30

SWITCHING

SILICON

2 MHz

BUB323Z by Onsemi

BUB323Z

Onsemi

BUB323Z by Onsemi is a NPN BJT with Darlington configuration, ideal for switching applications. It has a max power dissipation of 150W, hFE of 500, and VCE of 350V. With a small outline package style and surface mount capability, it operates b/w -65 to 175 °C for various electronic designs.

COLLECTOR

10 A

350 V

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

500

R-PSSO-G2

e0

1

1

2

175 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

NPN

150 W

Not Qualified

Other Transistors

YES

Tin/Lead (Sn/Pb)

GULL WING

SINGLE

30

SWITCHING

SILICON

2 MHz

MJD2955G by Onsemi

MJD2955G

Onsemi

MJD2955G by Onsemi is a PNP BJT transistor with 60V VCE, 10A IC, and 20W power dissipation. Ideal for amplifier applications, it has a hFE of 5 and operates up to 150°C. This Gull Wing package with matte tin finish is surface mountable and offers a transition frequency of 2MHz.

COLLECTOR

10 A

60 V

SINGLE

5

R-PSSO-G2

e3

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

20 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

SINGLE

30

AMPLIFIER

SILICON

2 MHz

MJF3055G by Onsemi

MJF3055G

Onsemi

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 2 MHz; Maximum Power Dissipation (Abs): 30 W; Maximum Collector Current (IC): 10 A;

ISOLATED

10 A

90 V

SINGLE

5

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

30 W

Not Qualified

UL RECOGNIZED

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

2 MHz

BUB323ZG by Onsemi

BUB323ZG

Onsemi

BUB323ZG by Onsemi is a NPN Power BJT with Darlington configuration, ideal for switching applications. With a max power dissipation of 150W and max collector-emitter voltage of 350V, it operates b/w -65 to 175°C. This surface-mount transistor has a min DC current gain of 500 and can handle up to 10A collector current.

COLLECTOR

10 A

350 V

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

500

R-PSSO-G2

e3

1

1

2

175 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

150 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

SINGLE

30

SWITCHING

SILICON

2 MHz

2N5194G by Onsemi

2N5194G

Onsemi

The Onsemi 2N5194G is a PNP power BJT with max. collector-emitter voltage of 60V and max. collector current of 4A. It has a min. DC current gain of 10, making it suitable for switching applications with a max. power dissipation of 40W in a rectangular package style for through-hole mounting.

4 A

60 V

SINGLE

10

TO-225AA

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

260

PNP

40 W

Not Qualified

Other Transistors

NO

Tin (Sn)

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

2 MHz

2N5302G by Onsemi

2N5302G

Onsemi

The Onsemi 2N5302G is a NPN power BJT with max. collector-emitter voltage of 60V and max. collector current of 30A. It has a min. DC current gain of 5 and can dissipate up to 200W power. Ideal for switching applications, it operates b/w -65 °C to 200°C temperatures with a transition frequency of 2MHz.

COLLECTOR

30 A

60 V

SINGLE

5

TO-204AA

O-MBFM-P2

e3

1

2

200 Cel

-65 Cel

METAL

ROUND

FLANGE MOUNT

NPN

200 W

Not Qualified

Other Transistors

NO

MATTE TIN

PIN/PEG

BOTTOM

SWITCHING

SILICON

2 MHz

2N5684G by Onsemi

2N5684G

Onsemi

Onsemi's 2N5684G is a PNP BJT transistor with max. collector-emitter voltage of 80V, max. current of 50A, and power dissipation of 300W. Ideal for switching applications due to its single configuration and high operating temperature range (-65 to 200 °C).

COLLECTOR

50 A

80 V

SINGLE

5

TO-204AE

O-MBFM-P2

e1

1

2

200 Cel

-65 Cel

METAL

ROUND

FLANGE MOUNT

PNP

300 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

PIN/PEG

BOTTOM

SWITCHING

SILICON

2 MHz

BU323ZG by Onsemi

BU323ZG

Onsemi

BU323ZG by Onsemi is a NPN power BJT with Darlington configuration, ideal for switching applications. It features a max collector-emitter voltage of 350V, collector current of 10A, and power dissipation of 150W. This transistor has a min DC current gain of 500 and operates at temperatures up to 175°C.

COLLECTOR

10 A

350 V

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

500

TO-247

R-PSFM-T3

e3

1

3

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

150 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

2 MHz

MJ15002G by Onsemi

MJ15002G

Onsemi

MJ15002G by Onsemi is a PNP BJT transistor with 200W power dissipation, 140V max collector-emitter voltage, and 15A max collector current. Ideal for amplifier applications due to its single configuration and silicon element material. Package style is flange mount with round shape and bottom terminal position.

COLLECTOR

15 A

140 V

SINGLE

25

TO-204AA

O-MBFM-P2

e3

1

2

200 Cel

METAL

ROUND

FLANGE MOUNT

260

PNP

200 W

Not Qualified

Other Transistors

NO

TIN

PIN/PEG

BOTTOM

AMPLIFIER

SILICON

2 MHz

MJD3055G by Onsemi

MJD3055G

Onsemi

MJD3055G by Onsemi is a NPN BJT transistor with 60V VCE, 10A IC, and 20W Ptot. Ideal for amplifier applications, it has a hFE of 5, operates up to 150 °C, and comes in a small outline package with Gull Wing terminals.

COLLECTOR

10 A

60 V

SINGLE

5

R-PSSO-G2

e3

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

20 W

Not Qualified

Other Transistors

YES

TIN

GULL WING

SINGLE

30

AMPLIFIER

SILICON

2 MHz

NJVBUB323ZT4G by Onsemi

NJVBUB323ZT4G

Onsemi

NJVBUB323ZT4G by Onsemi is a NPN BJT with Darlington configuration, ideal for switching applications. It has a max collector-emitter voltage of 350V, max operating temp of 175°C, and can handle up to 10A collector current. This power transistor comes in a small outline package suitable for surface mount assembly.

COLLECTOR

10 A

350 V

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

500

R-PSSO-G2

e3

1

1

2

175 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

150 W

AEC-Q101

Other Transistors

YES

Matte Tin (Sn) - annealed

GULL WING

SINGLE

30

SWITCHING

SILICON

2 MHz

2N4237PBFREE by Central Semiconductor

2N4237PBFREE

Central Semiconductor

2N4237PBFREE by Central Semiconductor is a NPN BJT transistor with VCEsat of 0.6V, hFE of 30, and IC of 3A. Ideal for switching applications due to its low saturation voltage and high collector current capacity. Operates in temperatures ranging from -65°C to 200°C, making it suitable for various industrial uses.

3 A

100 pF

40 V

SINGLE

30

TO-39

O-MBCY-W3

e3

1

3

200 Cel

-65 Cel

METAL

ROUND

CYLINDRICAL

NPN

6 W

NO

MATTE TIN OVER NICKEL

WIRE

BOTTOM

SWITCHING

SILICON

2 MHz

.6 V