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150 MHz Power Bipolar Junction Transistors (BJT) 17

Power Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Maximum Fall Time (tf) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
BCP5316TA by Diodes Incorporated

BCP5316TA

Diodes Incorporated

BCP5316TA by Diodes Inc. is a PNP BJT transistor for switching applications. It has a max VCEsat of 0.5V, hFE of 100, and can handle up to 1A IC. With a max operating temp of 150°C, it's ideal for automotive electronics due to AEC-Q101 compliance.

HIGH RELIABILITY

COLLECTOR

1 A

25 pF

80 V

SINGLE

100

R-PDSO-G4

e3

1

1

4

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

2 W

AEC-Q101

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

150 MHz

.5 V

BCP5416QTA by Diodes Incorporated

BCP5416QTA

Diodes Incorporated

Diodes Inc. BCP5416QTA is a NPN BJT transistor for switching applications. Features include VCEsat of 0.5V, hFE of 25, and IC of 1A. With a max operating temp of 150°C, it's ideal for automotive electronics meeting AEC-Q101 and IATF 16949 standards.

COLLECTOR

1 A

25 pF

45 V

SINGLE

25

R-PDSO-G4

e3

1

1

4

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

2 W

AEC-Q101; IATF 16949

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

150 MHz

.5 V

BCP53QTA by Diodes Incorporated

BCP53QTA

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): 1 A;

HIGH RELIABILITY

COLLECTOR

1 A

25 pF

80 V

SINGLE

25

R-PDSO-G4

e3

1

1

4

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

2 W

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

150 MHz

.5 V

BCP5316QTA by Diodes Incorporated

BCP5316QTA

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): 1 A;

HIGH RELIABILITY

COLLECTOR

1 A

25 pF

80 V

SINGLE

100

R-PDSO-G4

e3

1

1

4

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

2 W

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

150 MHz

.5 V

STD1805-1 by STMicroelectronics

STD1805-1

STMicroelectronics

STD1805-1 from STMicroelectronics is a robust NPN BJT designed for switching applications, featuring a max power dissipation of 15W and collector current of 5A. It operates efficiently up to 150 °C with a collector-emitter voltage of 60V. Ideal for various electronic circuits, it ensures reliable performance in compact designs.

5 A

60 V

SINGLE

20

TO-251AA

R-PSIP-T3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

260

NPN

15 W

Not Qualified

Other Transistors

NO

Matte Tin (Sn) - annealed

THROUGH-HOLE

SINGLE

30

SWITCHING

SILICON

150 MHz

STD1805T4 by STMicroelectronics

STD1805T4

STMicroelectronics

STD1805T4 by STMicroelectronics is a single NPN BJT designed for switching applications. It features a max power dissipation of 15W, collector current of 5A, and operates up to 150 °C. Ideal for compact electronic designs with surface mount capabilities.

5 A

60 V

SINGLE

20

TO-252AA

R-PSSO-G2

e3

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

15 W

Not Qualified

Other Transistors

YES

Matte Tin (Sn) - annealed

GULL WING

SINGLE

30

SWITCHING

SILICON

150 MHz

STN1802 by STMicroelectronics

STN1802

STMicroelectronics

STN1802 by STMicroelectronics is a robust NPN BJT designed for switching applications. It features a max power dissipation of 1.6W, operates up to 150 °C, and supports collector-emitter voltages up to 60V. Ideal for compact electronic designs with surface mount capabilities.

COLLECTOR

3 A

60 V

SINGLE

100

R-PDSO-G4

e3

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

1.6 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

150 MHz

STSA1805 by STMicroelectronics

STSA1805

STMicroelectronics

STSA1805 from STMicroelectronics is a robust NPN BJT designed for switching applications. It features a max power dissipation of 1.1W, operates up to 150 °C, and supports collector-emitter voltages up to 60V. Ideal for efficient circuit designs in various electronic devices.

5 A

60 V

SINGLE

20

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

1.1 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

150 MHz

FZT692BQTA by Diodes Incorporated

FZT692BQTA

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): 3 W; Maximum Collector Current (IC): 2 A;

COLLECTOR

2 A

12 pF

SINGLE

150

R-PDSO-G4

e3

1

1

4

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

3 W

AEC-Q101; IATF 16949

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

150 MHz

.5 V

FZT690BQTA by Diodes Incorporated

FZT690BQTA

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Collector Current (IC): 3 A; Terminal Finish: MATTE TIN;

HIGH RELIABILITY

COLLECTOR

3 A

45 V

SINGLE

50

R-PDSO-G4

e3

1

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

150 MHz

BCP5610QTA by Diodes Incorporated

BCP5610QTA

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): 1 A;

HIGH RELIABILITY

COLLECTOR

1 A

25 pF

80 V

SINGLE

25

R-PDSO-G4

e3

1

1

4

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

2 W

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

150 MHz

.5 V

BCP5610QTC by Diodes Incorporated

BCP5610QTC

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): 1 A;

HIGH RELIABILITY

COLLECTOR

1 A

25 pF

80 V

SINGLE

25

R-PDSO-G4

e3

1

1

4

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

2 W

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

150 MHz

.5 V

ZXTP19040CGQ-7 by Diodes Incorporated

ZXTP19040CGQ-7

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): 3 A;

HIGH RELIABILITY

COLLECTOR

3 A

40 V

SINGLE

100

R-PDSO-G4

e3

1

1

4

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

2 W

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

150 MHz

.5 V

BCP5616TQTA by Diodes Incorporated

BCP5616TQTA

Diodes Incorporated

BCP5616TQTA by Diodes Inc. is a NPN BJT transistor for switching applications. With VCEsat of 0.5V, hFE of 40, and IC of 1A, it operates at temperatures from -55 to 150°C. This small outline package with Gull Wing terminals is ideal for high-speed switching in automotive and industrial electronics.

COLLECTOR

1 A

25 pF

80 V

SINGLE

40

R-PDSO-G4

e3

1

4

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

2.5 W

AEC-Q101; IATF 16949; MIL-STD-202

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

150 MHz

.5 V

BCP5616TQTC by Diodes Incorporated

BCP5616TQTC

Diodes Incorporated

Diodes Inc. BCP5616TQTC is a NPN BJT transistor for switching applications. Features include VCEsat of 0.5V, hFE of 40, and IC of 1A. Ideal for small outline SMT designs in automotive and industrial electronics with operating temp range -55 to 150°C.

COLLECTOR

1 A

25 pF

80 V

SINGLE

40

R-PDSO-G4

e3

1

4

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

2.5 W

AEC-Q101; IATF 16949; MIL-STD-202

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

150 MHz

.5 V

BCP5616TTC by Diodes Incorporated

BCP5616TTC

Diodes Incorporated

Diodes Inc. BCP5616TTC is a NPN BJT transistor for switching applications. Features include VCEsat of 0.5V, hFE of 40, and IC of 1A. Ideal for small outline packages in surface mount configurations with a max operating temp of 150°C.

COLLECTOR

1 A

25 pF

80 V

SINGLE

40

R-PDSO-G4

e3

1

4

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

2.5 W

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

150 MHz

.5 V

BCP5616TTA by Diodes Incorporated

BCP5616TTA

Diodes Incorporated

Diodes Inc. BCP5616TTA is a NPN BJT transistor for switching applications. Features include VCEsat of 0.5V, hFE of 40, and IC of 1A. Ideal for small outline packages in surface mount designs with operating temperatures up to 150°C.

COLLECTOR

1 A

25 pF

80 V

SINGLE

40

R-PDSO-G4

e3

1

4

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

2.5 W

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

150 MHz

.5 V