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250 W Power Bipolar Junction Transistors (BJT) 8

Power Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Maximum Fall Time (tf) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
BUT30V by STMicroelectronics

BUT30V

STMicroelectronics

STMicroelectronics' BUT30V is an NPN BJT transistor with a max VCE of 125V and IC of 100A. Ideal for switching applications, it has a low VCEsat of 0.9V and fast fall time of 200ns. With a power dissipation of 250W, it operates up to 150°C making it suitable for high-power electronic systems.

ISOLATED

100 A

125 V

SINGLE

200 ns

R-XUFM-X3

1

3

150 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NPN

250 W

250 W

Not Qualified

BIP General Purpose Power

NO

NICKEL

UNSPECIFIED

UPPER

SWITCHING

SILICON

2200 ns

.9 V

2ST5949 by STMicroelectronics

2ST5949

STMicroelectronics

2ST5949 by STMicroelectronics is a robust NPN BJT designed for switching applications. It features a max power dissipation of 250W, operates up to 150 °C, and supports collector-emitter voltages of 250V. Ideal for high-performance power management in various electronic devices.

COLLECTOR

17 A

250 V

SINGLE

35

TO-3

O-MBFM-P2

e3

1

1

2

150 Cel

METAL

ROUND

FLANGE MOUNT

NPN

250 W

Not Qualified

Other Transistors

NO

MATTE TIN

PIN/PEG

BOTTOM

SWITCHING

SILICON

25 MHz

2ST2121 by STMicroelectronics

2ST2121

STMicroelectronics

2ST2121 by STMicroelectronics is a PNP power BJT designed for switching applications. It features a max power dissipation of 250W, operates up to 200 °C, and supports collector-emitter voltages of 250V. Ideal for high-performance electronic circuits.

COLLECTOR

17 A

250 V

SINGLE

35

TO-3

O-MBFM-P2

1

2

200 Cel

METAL

ROUND

FLANGE MOUNT

NOT SPECIFIED

PNP

250 W

Not Qualified

Other Transistors

NO

PIN/PEG

BOTTOM

NOT SPECIFIED

SWITCHING

SILICON

25 MHz

MJ21193G by Onsemi

MJ21193G

Onsemi

MJ21193G by Onsemi is a PNP BJT with 250V VCE, 16A IC, and 250W power dissipation. Ideal for amplifier applications due to its single configuration and high hFE of 8. The transistor's silicon element and flange mount package make it suitable for high-power setups.

COLLECTOR

16 A

250 V

SINGLE

8

TO-204AA

O-MBFM-P2

e3

1

2

200 Cel

METAL

ROUND

FLANGE MOUNT

PNP

250 W

Not Qualified

Other Transistors

NO

MATTE TIN

PIN/PEG

BOTTOM

AMPLIFIER

SILICON

4 MHz

BUV21G by Onsemi

BUV21G

Onsemi

BUV21G by Onsemi is a NPN Power BJT with 200V VCE, 40A IC, and 250W Ptot. Ideal for switching applications, it has a hFE of 10 and operates up to 200°C. The transistor's package style is flange mount with a round shape and collector case connection.

COLLECTOR

40 A

200 V

SINGLE

10

TO-204AE

O-MBFM-P2

e1

1

2

200 Cel

METAL

ROUND

FLANGE MOUNT

NPN

250 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

PIN/PEG

BOTTOM

SWITCHING

SILICON

8 MHz

BUV22G by Onsemi

BUV22G

Onsemi

BUV22G by Onsemi is a NPN power BJT with 250V VCE, 40A IC, and 250W Ptot. Ideal for switching applications due to its single configuration and high transition frequency of 8MHz. Its metal package body and flange mount style make it suitable for high-power requirements in various electronic systems.

COLLECTOR

40 A

250 V

SINGLE

10

TO-204AE

O-MBFM-P2

e1

1

2

200 Cel

METAL

ROUND

FLANGE MOUNT

NPN

250 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

PIN/PEG

BOTTOM

SWITCHING

SILICON

8 MHz

MJ15022G by Onsemi

MJ15022G

Onsemi

The Onsemi MJ15022G is a NPN BJT transistor with 200V VCEO and 16A IC, ideal for amplifier applications. With a max power dissipation of 250W, it operates up to 200°C. Featuring a single configuration in a round package style, it has a min hFE of 5 and fT of 4MHz.

COLLECTOR

16 A

200 V

SINGLE

5

TO-204AA

O-MBFM-P2

e3

1

2

200 Cel

METAL

ROUND

FLANGE MOUNT

NPN

250 W

Not Qualified

Other Transistors

NO

MATTE TIN

PIN/PEG

BOTTOM

AMPLIFIER

SILICON

4 MHz

MJ15023G by Onsemi

MJ15023G

Onsemi

The Onsemi MJ15023G is a PNP BJT transistor with 200V VCE, 16A IC, and 250W power dissipation. Ideal for amplifier applications due to its single configuration and high hFE of 5. Its metal package with flange mount style ensures efficient heat dissipation at up to 200°C operating temperature.

COLLECTOR

16 A

200 V

SINGLE

5

TO-204AA

O-MBFM-P2

e3

1

2

200 Cel

METAL

ROUND

FLANGE MOUNT

PNP

250 W

Not Qualified

Other Transistors

NO

MATTE TIN

PIN/PEG

BOTTOM

AMPLIFIER

SILICON

4 MHz