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1.6 W Power Bipolar Junction Transistors (BJT) 11

Power Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
2STN2340 by STMicroelectronics

2STN2340

STMicroelectronics

2STN2340 by STMicroelectronics is a PNP BJT transistor with 4 terminals. It has a max power dissipation of 1.6W, hFE of 180, and operates up to 150 °C. Ideal for switching applications due to its max collector-emitter voltage of 40V and max collector current of 3A.

COLLECTOR

3 A

40 V

SINGLE

180

R-PDSO-G4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

1.6 W

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

100 MHz

2STN2360 by STMicroelectronics

2STN2360

STMicroelectronics

2STN2360 by STMicroelectronics is a PNP power BJT designed for switching applications. It features a max collector current of 3 A, a power dissipation of 1.6 W, and operates up to 150 °C. Its compact SO package ensures efficient surface mounting in electronic circuits.

COLLECTOR

3 A

60 V

SINGLE

80

R-PDSO-G4

e3

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

1.6 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

130 MHz

2STN2540-A by STMicroelectronics

2STN2540-A

STMicroelectronics

2STN2540-A by STMicroelectronics is a PNP BJT transistor with 40V VCE, 5A IC, and 1.6W power dissipation. Ideal for switching applications in small outline packages due to its high DC current gain of 50 (hFE). The Gull Wing terminal form and matte tin finish make it suitable for surface mount designs.

COLLECTOR

5 A

40 V

SINGLE

50

R-PDSO-G4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

1.6 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

STN690A by STMicroelectronics

STN690A

STMicroelectronics

STN690A by STMicroelectronics is a robust NPN BJT designed for switching applications. It features a max power dissipation of 1.6W, supports up to 3A collector current, and operates at temperatures up to 150 °C. Its compact surface mount design ensures efficient performance in electronic circuits.

COLLECTOR

3 A

30 V

SINGLE

90

R-PDSO-G4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

1.6 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

STN878 by STMicroelectronics

STN878

STMicroelectronics

STN878 by STMicroelectronics is a compact NPN BJT designed for switching applications. It features a max power dissipation of 1.6 W, operates up to 150 °C, and supports collector currents up to 5 A. Ideal for efficient power management in electronic circuits.

COLLECTOR

5 A

30 V

SINGLE

70

R-PDSO-G4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

1.6 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

STN715 by STMicroelectronics

STN715

STMicroelectronics

STN715 by STMicroelectronics is a versatile NPN BJT designed for switching applications. It features a max power dissipation of 1.6W, operates up to 150 °C, and supports collector-emitter voltages of 80V. Ideal for compact electronic designs with its surface mount configuration.

COLLECTOR

1.5 A

80 V

SINGLE

40

R-PDSO-G4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

1.6 W

Not Qualified

Other Transistors

YES

Matte Tin (Sn) - annealed

GULL WING

DUAL

30

SWITCHING

SILICON

50 MHz

STN888 by STMicroelectronics

STN888

STMicroelectronics

STN888 by STMicroelectronics is a PNP BJT designed for switching applications, featuring a max power dissipation of 1.6 W and a collector current of 5 A. It operates at up to 150 °C with a collector-emitter voltage of 30 V. This compact surface mount transistor ensures efficient performance in various electronic circuits.

COLLECTOR

5 A

30 V

SINGLE

70

R-PDSO-G4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

1.6 W

Not Qualified

Other Transistors

YES

Matte Tin (Sn) - annealed

GULL WING

DUAL

30

SWITCHING

SILICON

STN749 by STMicroelectronics

STN749

STMicroelectronics

STN749 by STMicroelectronics is a PNP BJT designed for switching applications, featuring a max power dissipation of 1.6 W and collector current of 3 A. It operates up to 150 °C with a collector-emitter voltage of 25 V. This compact surface mount transistor ensures efficient performance in various electronic circuits.

COLLECTOR

3 A

25 V

SINGLE

15

R-PDSO-G4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

1.6 W

Not Qualified

Other Transistors

YES

Matte Tin (Sn) - annealed

GULL WING

DUAL

30

SWITCHING

SILICON

STN1802 by STMicroelectronics

STN1802

STMicroelectronics

STN1802 by STMicroelectronics is a robust NPN BJT designed for switching applications. It features a max power dissipation of 1.6W, operates up to 150 °C, and supports collector-emitter voltages up to 60V. Ideal for compact electronic designs with surface mount capabilities.

COLLECTOR

3 A

60 V

SINGLE

100

R-PDSO-G4

e3

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

1.6 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

150 MHz

STN724 by STMicroelectronics

STN724

STMicroelectronics

STN724 by STMicroelectronics is a versatile NPN BJT designed for switching applications. It features a max power dissipation of 1.6W, supports up to 3A collector current, and operates at temperatures up to 150 °C. Its compact SO package ensures efficient surface mounting.

COLLECTOR

3 A

30 V

SINGLE

30

R-PDSO-G4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

1.6 W

Not Qualified

Other Transistors

YES

Matte Tin (Sn) - annealed

GULL WING

DUAL

30

SWITCHING

SILICON

100 MHz

STN817A by STMicroelectronics

STN817A

STMicroelectronics

STN817A by STMicroelectronics is a PNP BJT designed for switching applications, featuring a max power dissipation of 1.6 W and an operating temp up to 150 °C. It supports a collector-emitter voltage of 80 V and offers a min DC gain (hFE) of 30. This compact surface mount transistor is ideal for efficient circuit designs.

COLLECTOR

1.5 A

80 V

SINGLE

30

R-PDSO-G4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

1.6 W

Not Qualified

Other Transistors

YES

Matte Tin (Sn) - annealed

GULL WING

DUAL

30

SWITCHING

SILICON

50 MHz