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1.5 W Other Function Transistors 13

Other Function Transistors
Part# Info Specs
Part RoHS Manufacturer Description Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Field Effect Transistor Technology JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements Operating Mode Maximum Operating Temperature Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation (Abs) Sub-Category Surface Mount Terminal Finish Maximum Time At Peak Reflow Temperature (s) Nominal Transition Frequency (fT)
BSP61-E6327 by Infineon Technologies

BSP61-E6327

Infineon Technologies

PNP; Configuration: DARLINGTON; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.5 W; Maximum Collector Current (IC): 1 A; Maximum Operating Temperature: 150 Cel;

1 A

DARLINGTON

1000

1

150 Cel

260

PNP

1.5 W

Other Transistors

YES

BSP60-E6433 by Infineon Technologies

BSP60-E6433

Infineon Technologies

PNP; Configuration: DARLINGTON; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.5 W; Maximum Collector Current (IC): 1 A; Minimum DC Current Gain (hFE): 1000;

1 A

DARLINGTON

1000

e0

1

150 Cel

235

PNP

1.5 W

Other Transistors

YES

TIN LEAD

BSP51-E6327 by Infineon Technologies

BSP51-E6327

Infineon Technologies

NPN; Configuration: DARLINGTON; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.5 W; Maximum Collector Current (IC): 1 A; Peak Reflow Temperature (C): 260;

1 A

DARLINGTON

1000

1

150 Cel

260

NPN

1.5 W

Other Transistors

YES

BFN38-E6327 by Infineon Technologies

BFN38-E6327

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.5 W; Maximum Collector Current (IC): .2 A; Minimum DC Current Gain (hFE): 25;

.2 A

SINGLE

25

1

1

150 Cel

260

NPN

1.5 W

Other Transistors

YES

STX93003-AP by STMicroelectronics

STX93003-AP

STMicroelectronics

STX93003-AP by STMicroelectronics is a PNP transistor with max power dissipation of 1.5W, hFE of 16, and IC of 1A. Ideal for applications requiring a single configuration such as amplifiers or switching circuits due to its high operating temperature of 150 °C.

1 A

SINGLE

16

e3

1

150 Cel

PNP

1.5 W

Other Transistors

NO

Matte Tin (Sn)

2SA1827S-AY by Onsemi

2SA1827S-AY

Onsemi

Onsemi's 2SA1827S-AY is a PNP transistor with max power dissipation of 1.5W, hFE of 140, and max collector current of 4A. Ideal for applications requiring high current amplification in a single configuration at temperatures up to 150 °C.

4 A

SINGLE

140

1

150 Cel

PNP

1.5 W

Other Transistors

NO

Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)

2SC4731S-AY by Onsemi

2SC4731S-AY

Onsemi

2SC4731S-AY by Onsemi is an NPN transistor with a max power dissipation of 1.5W, hFE of 140, and IC of 4A. Ideal for applications requiring high current amplification in a single configuration at temperatures up to 150 °C.

4 A

SINGLE

140

1

150 Cel

NPN

1.5 W

Other Transistors

NO

Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)

2SC4731T-AY by Onsemi

2SC4731T-AY

Onsemi

2SC4731T-AY by Onsemi is an NPN transistor with a max power dissipation of 1.5W, hFE of 200, and max collector current of 4A. Ideal for applications requiring high DC gain and moderate power handling in temperatures up to 150 °C.

4 A

SINGLE

200

1

150 Cel

NPN

1.5 W

Other Transistors

NO

Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)

MCH6331-TL-E by Onsemi

MCH6331-TL-E

Onsemi

The Onsemi MCH6331-TL-E is a P-CHANNEL FET with 3.5A ID and 1.5W power dissipation in ENHANCEMENT MODE. Ideal for surface mount applications, it operates up to 150 °C, making it suitable for various electronic circuits requiring high drain current capabilities.

SINGLE

3.5 A

3.5 A

METAL-OXIDE SEMICONDUCTOR

e6

1

1

ENHANCEMENT MODE

150 Cel

P-CHANNEL

1.5 W

Other Transistors

YES

Tin/Bismuth (Sn/Bi)

2SA1855S-AY by Onsemi

2SA1855S-AY

Onsemi

2SA1855S-AY by Onsemi is a PNP transistor with max power dissipation of 1.5W, hFE of 140, and max collector current of 4A. Ideal for applications requiring high current amplification in a single configuration at temperatures up to 150°C.

4 A

SINGLE

140

1

150 Cel

PNP

1.5 W

Other Transistors

NO

Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)

2SC4837S-AY by Onsemi

2SC4837S-AY

Onsemi

2SC4837S-AY by Onsemi is an NPN transistor with max power dissipation of 1.5W, hFE of 140, and max collector current of 4A. Ideal for applications requiring a single configuration such as amplifiers or switching circuits due to its high operating temperature of 150 °C.

4 A

SINGLE

140

1

150 Cel

NPN

1.5 W

Other Transistors

NO

Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)

BC337-025 by Onsemi

BC337-025

Onsemi

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1.5 W; Maximum Collector Current (IC): .8 A; Terminal Finish: TIN LEAD;

.8 A

SINGLE

160

e0

1

150 Cel

235

NPN

1.5 W

Other Transistors

NO

TIN LEAD

BC337-040 by Onsemi

BC337-040

Onsemi

BC337-040 by Onsemi is an NPN transistor with a max power dissipation of 1.5W and min DC current gain of 250. It operates at up to 150 °C, handles a max collector current of 0.8A, and has TIN LEAD terminal finish. Ideal for various electronic applications requiring reliable switching and amplification in compact designs.

.8 A

SINGLE

250

e0

1

150 Cel

235

NPN

1.5 W

Other Transistors

NO

TIN LEAD