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Vishay Intertechnology Insulated Gate Bipolar Transistors (IGBT) 9

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
VS-GB90DA120U by Vishay Intertechnology

VS-GB90DA120U

Vishay Intertechnology

VS-GB90DA120U by Vishay Intertechnology is an N-CHANNEL IGBT with 1200V max collector-emitter voltage, 149A max collector current, and 862W max power dissipation. Ideal for power control applications, it features a single configuration with built-in diode and operates in temperatures ranging from -40 to 150 °C.

ISOLATED

149 A

1200 V

SINGLE WITH BUILT-IN DIODE

6 V

20 V

R-PUFM-X4

1

4

150 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

862 W

UL RECOGNIZED

NO

NICKEL

UNSPECIFIED

UPPER

POWER CONTROL

SILICON

420 ns

293 ns

VS-40MT120UHAPBF by Vishay Intertechnology

VS-40MT120UHAPBF

Vishay Intertechnology

VS-40MT120UHAPBF by Vishay Intertechnology is an IGBT with N-CHANNEL polarity, 2 elements with built-in diode. It has a max VCEsat of 4.91V and can handle up to 80A collector current. Ideal for power control applications due to its high power dissipation of 463W and max operating temperature of 150°C.

ISOLATED

80 A

1200 V

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

6 V

20 V

R-PUFM-P10

2

10

150 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

463 W

UL RECOGNIZED

NO

PIN/PEG

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

4.91 V

VS-GA200SA60UP by Vishay Intertechnology

VS-GA200SA60UP

Vishay Intertechnology

VS-GA200SA60UP by Vishay Intertechnology is an N-CHANNEL IGBT with 600V max collector-emitter voltage and 200A max collector current. It has a single configuration for power control applications, featuring a rectangular package style with flange mount and isolated case connection. Nominal turn off time is 620ns and turn on time is 131ns, making it suitable for high-power switching needs.

LOW CONDUCTION LOSS

ISOLATED

200 A

600 V

SINGLE

R-PUFM-X4

1

4

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

UL APPROVED

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

620 ns

131 ns

VS-150MT060WDF by Vishay Intertechnology

VS-150MT060WDF

Vishay Intertechnology

VS-150MT060WDF by Vishay Intertechnology is an N-CHANNEL IGBT with 2 elements, diode, and thermistor. It has a max collector-emitter voltage of 600V and can handle a max collector current of 138A. Ideal for power control applications due to its high power dissipation of 57W and fast turn-off time of 458ns.

ISOLATED

138 A

600 V

PARALLEL, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

6.2 V

20 V

R-PUFM-P14

2

14

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

57 W

UL RECOGNIZED

NO

PIN/PEG

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

458 ns

247 ns

VS-CPV364M4FPBF by Vishay Intertechnology

VS-CPV364M4FPBF

Vishay Intertechnology

VS-CPV364M4FPBF by Vishay Intertechnology is an N-CHANNEL IGBT with 600V VCEsat, 27A IC, and 63W power dissipation. Ideal for POWER CONTROL applications, it features a complex configuration, 240ns fall time, and -40 to 150°C operating temperature range.

ISOLATED

27 A

600 V

COMPLEX

240 ns

6 V

20 V

R-PSFM-T13

6

13

150 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

63 W

UL RECOGNIZED

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

570 ns

380 ns

60 ns

1.5 V

VS-GT100DA120UF by Vishay Intertechnology

VS-GT100DA120UF

Vishay Intertechnology

VS-GT100DA120UF by Vishay Intertechnology is an N-CHANNEL IGBT with 1200V max collector-emitter voltage and 187A max collector current. Ideal for power control applications, it features a single configuration with built-in diode, 490ns turn off time, and 208ns turn on time. UL approved and designed in a rectangular package style for flange mount.

ISOLATED

187 A

1200 V

SINGLE WITH BUILT-IN DIODE

R-PUFM-X4

1

4

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

UL APPROVED

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

490 ns

208 ns

VS-GT80DA120U by Vishay Intertechnology

VS-GT80DA120U

Vishay Intertechnology

VS-GT80DA120U by Vishay Intertechnology is an N-CHANNEL IGBT with 1200V max collector-emitter voltage, 139A max collector current, and 658W max power dissipation. Ideal for power control applications, it features a single configuration with built-in diode and operates in temperatures ranging from -40°C to 150°C.

ISOLATED

139 A

1200 V

SINGLE WITH BUILT-IN DIODE

7 V

20 V

R-PUFM-X4

1

4

150 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

658 W

UL RECOGNIZED

NO

UNSPECIFIED

UPPER

POWER CONTROL

SILICON

436 ns

199 ns

VS-GT55LA120UX by Vishay Intertechnology

VS-GT55LA120UX

Vishay Intertechnology

VS-GT55LA120UX by Vishay Intertechnology is an N-CHANNEL IGBT with 1200V max collector-emitter voltage and 68A max collector current. Ideal for power control applications, it features a built-in diode, 260ns turn off time, and 291W max power dissipation.

ISOLATED

68 A

1200 V

SINGLE WITH BUILT-IN DIODE

7.6 V

20 V

R-PUFM-X4

1

4

150 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

291 W

UL RECOGNIZED

NO

UNSPECIFIED

UPPER

POWER CONTROL

SILICON

260 ns

19 ns

VS-GT90DA120U by Vishay Intertechnology

VS-GT90DA120U

Vishay Intertechnology

VS-GT90DA120U by Vishay Intertechnology is an N-CHANNEL IGBT with 1200V VCEsat, 2.6V, and 169A IC. Ideal for POWER CONTROL applications, it features a single configuration with built-in diode and operates in temperatures ranging from -40 to 150 °C.

ISOLATED

169 A

1200 V

SINGLE WITH BUILT-IN DIODE

7.6 V

20 V

R-PUFM-X4

1

4

150 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

781 W

UL APPROVED

NO

UNSPECIFIED

UPPER

POWER CONTROL

SILICON

270 ns

61 ns

2.6 V