Loading...

56 W Insulated Gate Bipolar Transistors (IGBT) 8

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
STGPL6NC60DI by STMicroelectronics

STGPL6NC60DI

STMicroelectronics

STGPL6NC60DI by STMicroelectronics is an N-CHANNEL IGBT with 600V VCE, 14A IC, and 56W Ptot. It features a built-in diode for power control applications. The transistor has a toff of 122ns and ton of 10.5ns, making it suitable for high-speed switching operations in various industrial systems.

14 A

600 V

SINGLE WITH BUILT-IN DIODE

5.75 V

20 V

TO-220AB

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

56 W

Insulated Gate BIP Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

122 ns

10.5 ns

STG3P2M10N60B by STMicroelectronics

STG3P2M10N60B

STMicroelectronics

STG3P2M10N60B from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control. It features a max VCEsat of 2.5V, supports up to 600V, and has a nominal turn-off time of just 99ns. Ideal for high-performance applications in industrial drives and renewable energy systems.

19 A

600 V

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

20 V

R-XUFM-X16

6

16

150 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

56 W

Not Qualified

Insulated Gate BIP Transistors

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

99 ns

27 ns

2.5 V

STGB6NC60HD-1 by STMicroelectronics

STGB6NC60HD-1

STMicroelectronics

STGB6NC60HD-1 from STMicroelectronics is an N-channel IGBT designed for power control applications. It features a max collector-emitter voltage of 600V, a nominal turn-off time of 222ns, and can handle up to 15A of current. This robust device operates efficiently in high-temperature environments up to 150 °C.

15 A

600 V

SINGLE WITH BUILT-IN DIODE

5.75 V

20 V

TO-262AA

R-PSIP-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

NOT SPECIFIED

N-CHANNEL

56 W

Not Qualified

Insulated Gate BIP Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

222 ns

17.3 ns

STGBL6NC60DT4 by STMicroelectronics

STGBL6NC60DT4

STMicroelectronics

STGBL6NC60DT4 from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control. It features a max collector-emitter voltage of 600V, 14A collector current, and a fast turn-off time of 122ns. Ideal for applications in energy conversion and motor drives.

14 A

600 V

SINGLE WITH BUILT-IN DIODE

5.75 V

20 V

TO-263AB

R-PSSO-G2

e3

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

245

N-CHANNEL

56 W

Not Qualified

Insulated Gate BIP Transistors

YES

MATTE TIN

GULL WING

SINGLE

30

POWER CONTROL

SILICON

122 ns

10.5 ns

STGPL6NC60D by STMicroelectronics

STGPL6NC60D

STMicroelectronics

STGPL6NC60D from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max collector-emitter voltage of 600V, 14A collector current, and a fast turn-off time of 122ns. Ideal for high-temperature environments with a max operating temp of 150 °C.

14 A

600 V

SINGLE WITH BUILT-IN DIODE

5.75 V

20 V

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

56 W

Not Qualified

Insulated Gate BIP Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

122 ns

10.5 ns

STGD6NC60HT4 by STMicroelectronics

STGD6NC60HT4

STMicroelectronics

STGD6NC60HT4 from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control. It features a max collector-emitter voltage of 600V, 15A collector current, and operates at up to 150 °C. Ideal for applications requiring fast switching and high power dissipation.

15 A

600 V

SINGLE

5.75 V

20 V

TO-252

R-PSSO-G2

e3

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

56 W

Not Qualified

Insulated Gate BIP Transistors

YES

MATTE TIN

GULL WING

SINGLE

POWER CONTROL

SILICON

222 ns

17.3 ns

STGB6NC60HDT4 by STMicroelectronics

STGB6NC60HDT4

STMicroelectronics

STGB6NC60HDT4 by STMicroelectronics is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 15A max collector current, and 56W max power dissipation. Ideal for power control applications due to its fast turn-off time of 222ns and built-in diode configuration. Suitable for surface mount with a small outline package style.

15 A

600 V

SINGLE WITH BUILT-IN DIODE

5.75 V

20 V

R-PSSO-G2

e3

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

245

N-CHANNEL

56 W

Not Qualified

Insulated Gate BIP Transistors

YES

MATTE TIN

GULL WING

SINGLE

30

POWER CONTROL

SILICON

222 ns

17.3 ns

STGB6NC60HT4 by STMicroelectronics

STGB6NC60HT4

STMicroelectronics

STGB6NC60HT4 from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max collector-emitter voltage of 600V, 15A collector current, and fast switching times (toff: 222ns, ton: 17.3ns). Ideal for compact designs with its surface mount configuration.

15 A

600 V

SINGLE

5.75 V

20 V

R-PSSO-G2

e3

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

56 W

Not Qualified

Insulated Gate BIP Transistors

YES

MATTE TIN

GULL WING

SINGLE

POWER CONTROL

SILICON

222 ns

17.3 ns