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125 W Insulated Gate Bipolar Transistors (IGBT) 17

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
STGB10NB37LZ by STMicroelectronics

STGB10NB37LZ

STMicroelectronics

STGB10NB37LZ by STMicroelectronics is an N-CHANNEL IGBT with 375V max collector-emitter voltage, 20A max collector current, and 125W max power dissipation. It's designed for automotive ignition applications due to its built-in diode and resistor, small outline package style, and matte tin terminal finish.

VOLTAGE CLAMPING

COLLECTOR

20 A

375 V

SINGLE WITH BUILT-IN DIODE AND RESISTOR

2.4 V

TO-263AB

R-PSSO-G2

e3

1

1

2

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

245

N-CHANNEL

125 W

Not Qualified

Insulated Gate BIP Transistors

YES

Matte Tin (Sn) - annealed

GULL WING

SINGLE

30

AUTOMOTIVE IGNITION

SILICON

17800 ns

860 ns

STGP10NB37LZ by STMicroelectronics

STGP10NB37LZ

STMicroelectronics

STGP10NB37LZ by STMicroelectronics is an N-CHANNEL IGBT with 375V max collector-emitter voltage, 20A max collector current, and 125W max power dissipation. Primarily used in automotive ignition systems due to its single configuration with built-in diode and nominal turn-off time of 17800ns.

VOLTAGE CLAMPING

20 A

375 V

SINGLE WITH BUILT-IN DIODE

2.4 V

TO-220AB

R-PSFM-T3

e3

1

3

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

125 W

Not Qualified

Insulated Gate BIP Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

AUTOMOTIVE IGNITION

SILICON

17800 ns

860 ns

STGP19NC60WD by STMicroelectronics

STGP19NC60WD

STMicroelectronics

STGP19NC60WD from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max collector-emitter voltage of 600V, 40A collector current, and a fast turn-off time of 204ns. Ideal for high-performance switching in industrial systems.

40 A

600 V

SINGLE WITH BUILT-IN DIODE

5.75 V

20 V

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

125 W

Not Qualified

Insulated Gate BIP Transistors

NO

Matte Tin (Sn)

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

204 ns

33 ns

STGW19NC60WD by STMicroelectronics

STGW19NC60WD

STMicroelectronics

STGW19NC60WD from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max collector-emitter voltage of 600V, 42A collector current, and a fast turn-off time of 204ns. Ideal for high-performance switching in industrial systems.

42 A

600 V

SINGLE WITH BUILT-IN DIODE

5.75 V

20 V

TO-247

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

125 W

Not Qualified

Insulated Gate BIP Transistors

NO

Matte Tin (Sn)

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

204 ns

33 ns

STGP19NC60W by STMicroelectronics

STGP19NC60W

STMicroelectronics

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 40 A; JEDEC-95 Code: TO-220AB;

40 A

600 V

SINGLE

5.75 V

20 V

TO-220AB

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

125 W

Not Qualified

Insulated Gate BIP Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

204 ns

33 ns

STGD18N40LZ-1 by STMicroelectronics

STGD18N40LZ-1

STMicroelectronics

STGD18N40LZ-1 from STMicroelectronics is an N-channel IGBT ideal for automotive ignition applications. It features a max collector-emitter voltage of 420 V, power dissipation of 125 W, and operates at up to 175 °C. Its built-in diode enhances efficiency in demanding environments.

VOLTAGE CLAMPING

COLLECTOR

25 A

420 V

SINGLE WITH BUILT-IN DIODE AND RESISTOR

2.3 V

16 V

TO-251

R-PSIP-T3

e3

1

1

3

175 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

N-CHANNEL

125 W

Not Qualified

Insulated Gate BIP Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

AUTOMOTIVE IGNITION

SILICON

22200 ns

4450 ns

STGP19NC60S by STMicroelectronics

STGP19NC60S

STMicroelectronics

STGP19NC60S by STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max collector-emitter voltage of 600 V, a power dissipation of 125 W, and operates at up to 150 °C. Its fast switching times (ton: 23.5 ns, toff: 535 ns) enhance performance in various electronic systems.

FREE WHEELING DIODE

COLLECTOR

50 A

600 V

SINGLE

5.75 V

20 V

TO-220AB

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

125 W

Not Qualified

Insulated Gate BIP Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

535 ns

23.5 ns

STGD19N40LZ by STMicroelectronics

STGD19N40LZ

STMicroelectronics

STGD19N40LZ by STMicroelectronics is an N-CHANNEL IGBT with VCEsat of 1.85V, IC of 25A, and Ptot of 125W. It is used for power control applications in a small outline package with a max operating temperature of 175°C.

COLLECTOR

25 A

425 V

SINGLE WITH BUILT-IN DIODE AND RESISTOR

2.6 V

16 V

TO-252

R-PSSO-G2

e3

1

1

2

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

125 W

AEC-Q101

YES

MATTE TIN

GULL WING

SINGLE

30

POWER CONTROL

SILICON

22200 ns

4450 ns

1.85 V

FGH20N6S2D by Fairchild Semiconductor

FGH20N6S2D

Fairchild Semiconductor

FGH20N6S2D by Fairchild Semiconductor is an N-CHANNEL IGBT with a max collector-emitter voltage of 600V and a max gate-emitter voltage of 20V. It has a single configuration with built-in diode, ideal for power control applications. This transistor offers fast switching times with a nominal turn-off time of 205ns and a max fall time of 105ns.

LOW CONDUCTION LOSS

28 A

600 V

SINGLE WITH BUILT-IN DIODE

105 ns

5 V

20 V

TO-247

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

125 W

Not Qualified

Insulated Gate BIP Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

205 ns

11.5 ns

STGB12NB60KDT4 by STMicroelectronics

STGB12NB60KDT4

STMicroelectronics

STGB12NB60KDT4 from STMicroelectronics is an N-channel IGBT ideal for motor control applications. It features a max collector-emitter voltage of 600V, power dissipation of 125W, and fast switching times (toff: 461ns, ton: 39.5ns). Its compact design ensures efficient performance in surface mount configurations.

30 A

600 V

SINGLE WITH BUILT-IN DIODE

7 V

20 V

R-PSSO-G2

e3

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

125 W

Not Qualified

Insulated Gate BIP Transistors

YES

MATTE TIN

GULL WING

SINGLE

MOTOR CONTROL

SILICON

461 ns

39.5 ns

STGP12NB60KD by STMicroelectronics

STGP12NB60KD

STMicroelectronics

STGP12NB60KD from STMicroelectronics is an N-channel IGBT ideal for motor control applications. It features a max collector-emitter voltage of 600V, power dissipation of 125W, and a turn-off time of 461ns. This robust device operates efficiently at up to 150 °C.

30 A

600 V

SINGLE WITH BUILT-IN DIODE

7 V

20 V

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

125 W

Not Qualified

Insulated Gate BIP Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

MOTOR CONTROL

SILICON

461 ns

39.5 ns

NGD8201NT4G by Onsemi

NGD8201NT4G

Onsemi

NGD8201NT4G by Onsemi is an N-CHANNEL IGBT with 20A IC, 400V VCE, and 125W power dissipation. Ideal for power control applications, it features a built-in diode and resistor in a small outline package suitable for surface mount technology.

COLLECTOR

20 A

400 V

SINGLE WITH BUILT-IN DIODE AND RESISTOR

14000 ns

2.1 V

15 V

R-PSSO-G2

e3

1

2

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

125 W

Not Qualified

8000 ns

Insulated Gate BIP Transistors

YES

TIN

GULL WING

SINGLE

POWER CONTROL

SILICON

18500 ns

6500 ns

IXYY8N90C3-TRL by IXYS Corporation

IXYY8N90C3-TRL

IXYS Corporation

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 20 A; Maximum Gate-Emitter Voltage: 20 V;

COLLECTOR

20 A

900 V

SINGLE

6 V

20 V

TO-252AA

R-PSSO-G2

1

2

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

125 W

YES

GULL WING

SINGLE

POWER CONTROL

SILICON

238 ns

39 ns

3 V

HGTP7N60A4-F102 by Onsemi

HGTP7N60A4-F102

Onsemi

HGTP7N60A4-F102 by Onsemi is an N-CHANNEL IGBT transistor with a max VCEsat of 2.7V and a max IC of 34A. It is designed for power control applications, featuring a package style of FLANGE MOUNT and operating temperatures ranging from -55 to 150 °C.

LOW CONDUCTION LOSS

COLLECTOR

34 A

600 V

SINGLE

85 ns

7 V

20 V

TO-220AB

R-PSFM-T3

1

3

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

125 W

NO

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

235 ns

205 ns

17 ns

2.7 V

LGD8201ATI by Littelfuse

LGD8201ATI

Littelfuse

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 20 A; Package Style (Meter): SMALL OUTLINE;

COLLECTOR

20 A

440 V

SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR

14000 ns

2.1 V

15 V

R-PSSO-G2

1

2

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

125 W

AEC-Q101

7000 ns

YES

GULL WING

SINGLE

AUTOMOTIVE IGNITION

SILICON

24000 ns

18500 ns

9000 ns

6500 ns

1.9 V

LGD8205ATI by Littelfuse

LGD8205ATI

Littelfuse

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 20 A; Reference Standard: AEC-Q101;

COLLECTOR

20 A

390 V

SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR

8000 ns

2.1 V

15 V

R-PSSO-G2

1

2

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

125 W

AEC-Q101

8000 ns

YES

GULL WING

SINGLE

AUTOMOTIVE IGNITION

SILICON

18000 ns

14000 ns

10000 ns

7500 ns

LGD8201TH by Littelfuse

LGD8201TH

Littelfuse

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 20 A; Maximum Turn On Time (ton): 10000 ns;

COLLECTOR

20 A

440 V

SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR

8000 ns

2.1 V

15 V

R-PSSO-G2

1

2

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

125 W

AEC-Q101

8000 ns

YES

GULL WING

SINGLE

AUTOMOTIVE IGNITION

SILICON

18000 ns

14000 ns

10000 ns

7500 ns