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80 A Insulated Gate Bipolar Transistors (IGBT) 105

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
FGHL40T65MQD by Onsemi

FGHL40T65MQD

Onsemi

FGHL40T65MQD by Onsemi is an N-CHANNEL IGBT with a max VCEsat of 1.8V and a max collector-emitter voltage of 650V. It is designed for power amplifier applications, featuring a single configuration with built-in diode. With a max power dissipation of 238W and operating temperature up to 175°C, it offers reliable performance in various high-power electronic systems.

RC-IGBT

80 A

650 V

SINGLE WITH BUILT-IN DIODE

6 V

20 V

TO-247

R-PSFM-T3

e3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

238 W

NO

Matte Tin (Sn) - annealed

THROUGH-HOLE

SINGLE

POWER AMPLIFIER

SILICON

203 ns

52 ns

1.8 V

FGHL50T65MQD by Onsemi

FGHL50T65MQD

Onsemi

FGHL50T65MQD by Onsemi is an N-CHANNEL IGBT with a max VCEsat of 1.8V and a max collector-emitter voltage of 650V. It is designed for power control applications, offering a max operating temperature of 175 °C and a max collector current of 80A.

COLLECTOR

80 A

650 V

SINGLE WITH BUILT-IN DIODE

6 V

20 V

TO-247

R-PSFM-T3

e3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

268 W

NO

Matte Tin (Sn) - annealed

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

1.8 V

FGHL75T65MQD by Onsemi

FGHL75T65MQD

Onsemi

FGHL75T65MQD by Onsemi is an N-CHANNEL IGBT with a max VCEsat of 1.8V and a max collector-emitter voltage of 650V. It is designed for power control applications, offering a nominal turn off time of 280ns and a max operating temperature of 175°C.

RC-IGBT

80 A

650 V

SINGLE WITH BUILT-IN DIODE

6 V

20 V

TO-247

R-PSFM-T3

e3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

375 W

NO

Matte Tin (Sn) - annealed

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

280 ns

92 ns

1.8 V

IHW40N135R5XKSA1 by Infineon Technologies

IHW40N135R5XKSA1

Infineon Technologies

IHW40N135R5XKSA1 by Infineon Technologies is an N-CHANNEL IGBT with 1350V VCEsat and 80A IC, ideal for POWER CONTROL applications. Featuring a built-in diode, it has a max power dissipation of 394W and operates in temperatures ranging from -40 to 175°C. This RECTANGULAR transistor with THROUGH-HOLE terminals offers fast turn-off time of 700ns.

80 A

1350 V

SINGLE WITH BUILT-IN DIODE

6.4 V

20 V

TO-247

R-PSFM-T3

e3

1

3

175 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

394 W

NO

TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

700 ns

1.95 V

IKFW75N60ETXKSA1 by Infineon Technologies

IKFW75N60ETXKSA1

Infineon Technologies

Infineon IKFW75N60ETXKSA1 is an N-Channel IGBT with VCEsat of 2V, toff of 417ns, and Pmax of 178W. Ideal for high-power applications like motor drives and inverters due to its max VCE of 600V, IC of 80A, and operating temp range from -40°C to 175°C.

ISOLATED

80 A

600 V

5.7 V

20 V

e3

175 Cel

-40 Cel

N-Channel

178 W

TIN

SILICON

417 ns

79 ns

2 V

AFGHL50T65SQ by Onsemi

AFGHL50T65SQ

Onsemi

AFGHL50T65SQ by Onsemi is an N-CHANNEL IGBT transistor with 650V VCEsat and 80A IC, ideal for POWER CONTROL applications. It has a max power dissipation of 268W, operating temperature range of -55 to 175 °C, and meets AEC-Q101 standard.

COLLECTOR

80 A

650 V

SINGLE

6.4 V

20 V

TO-247

R-PSFM-T3

e3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

268 W

AEC-Q101

NO

Matte Tin (Sn) - annealed

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

2.1 V

FGAF40S65AQ by Onsemi

FGAF40S65AQ

Onsemi

FGAF40S65AQ by Onsemi is an N-CHANNEL IGBT with 650V VCEsat, 80A IC, and 94W power dissipation. Ideal for general purpose switching applications, it features a built-in diode, 30.3ns turn on time, and -55 to 175°C operating temperature range.

ISOLATED

80 A

650 V

SINGLE WITH BUILT-IN DIODE

6.6 V

20 V

R-PSFM-T3

e3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

94 W

NO

Matte Tin (Sn) - annealed

THROUGH-HOLE

SINGLE

NOT SPECIFIED

GENERAL PURPOSE SWITCHING

SILICON

90.8 ns

30.3 ns

2.1 V

DGTD120T40S1PT by Diodes Incorporated

DGTD120T40S1PT

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 357 W; Maximum Collector Current (IC): 80 A; JEDEC-95 Code: TO-247;

80 A

1200 V

SINGLE WITH BUILT-IN DIODE

6.5 V

20 V

TO-247

R-PSFM-T3

e3

1

3

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

260

N-CHANNEL

357 W

NO

MATTE TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

387 ns

132 ns

2.4 V

FGHL75T65LQDTL4 by Onsemi

FGHL75T65LQDTL4

Onsemi

FGHL75T65LQDTL4 by Onsemi is an N-CHANNEL IGBT transistor with a max VCEsat of 1.35V and a max IC of 80A. It is designed for power control applications, featuring a single configuration with built-in diode and a package style of flange mount.

80 A

650 V

SINGLE WITH BUILT-IN DIODE

6 V

20 V

TO-247

R-PSFM-T4

e3

1

4

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

469 W

NO

MATTE TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

660 ns

60 ns

1.35 V