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150 A Insulated Gate Bipolar Transistors (IGBT) 27

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
SIGC121T60NR2CX1SA2 by Infineon Technologies

SIGC121T60NR2CX1SA2

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 150 A; Nominal Turn Off Time (toff): 260 ns; Package Style (Meter): UNCASED CHIP;

150 A

600 V

SINGLE

S-XUUC-N

1

150 Cel

UNSPECIFIED

SQUARE

UNCASED CHIP

NOT SPECIFIED

N-CHANNEL

Not Qualified

YES

NO LEAD

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

260 ns

155 ns

BSM100GD120DN2BOSA1 by Infineon Technologies

BSM100GD120DN2BOSA1

Infineon Technologies

N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 150 A; Terminal Form: THROUGH-HOLE; Maximum Collector-Emitter Voltage: 1200 V;

ISOLATED

150 A

1200 V

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE

R-XUFM-T39

6

39

150 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

Not Qualified

NO

THROUGH-HOLE

UPPER

POWER CONTROL

SILICON

470 ns

240 ns

FS150R12KT4BOSA1 by Infineon Technologies

FS150R12KT4BOSA1

Infineon Technologies

FS150R12KT4BOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 6 elements in a bridge configuration. It has a max VCEsat of 2.1V and can handle a collector current of 150A, making it suitable for high-power applications like motor drives and inverters. With a max operating temperature of 150°C and isolated case connection, it ensures reliable performance in demanding environments.

ISOLATED

150 A

1200 V

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

20 V

R-XUFM-X35

6

35

150 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

750 W

Not Qualified

Insulated Gate BIP Transistors

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

SILICON

605 ns

165 ns

2.1 V

IGW75N60TFKSA1 by Infineon Technologies

IGW75N60TFKSA1

Infineon Technologies

IGW75N60TFKSA1 by Infineon is an N-CHANNEL IGBT with 600V VCE, 150A IC, and 175°C max temp. Ideal for power control applications due to its single configuration and fast ton of 69ns. The package style is flange mount with through-hole terminals.

COLLECTOR

150 A

600 V

SINGLE

TO-247AD

R-PSFM-T3

e3

1

3

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

Not Qualified

NO

TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

401 ns

69 ns

FS150R17N3E4BOSA1 by Infineon Technologies

FS150R17N3E4BOSA1

Infineon Technologies

Insulated Gate Bipolar Transistors; Maximum Power Dissipation (Abs): 835 W; Maximum Collector Current (IC): 150 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Maximum VCEsat: 2.3 V; No. of Elements: 1;

150 A

1700 V

20 V

1

175 Cel

NOT SPECIFIED

835 W

Insulated Gate BIP Transistors

NOT SPECIFIED

2.3 V

SIGC158T120R3LEX1SA2 by Infineon Technologies

SIGC158T120R3LEX1SA2

Infineon Technologies

N-CHANNEL; Surface Mount: YES; Maximum Collector Current (IC): 150 A; Maximum Gate-Emitter Threshold Voltage: 6.5 V; Maximum Operating Temperature: 150 Cel; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;

150 A

1200 V

6.5 V

20 V

150 Cel

NOT SPECIFIED

N-CHANNEL

Insulated Gate BIP Transistors

YES

NOT SPECIFIED

FS150R06KE3BOSA1 by Infineon Technologies

FS150R06KE3BOSA1

Infineon Technologies

FS150R06KE3BOSA1 by Infineon is a N-CHANNEL IGBT with 6 elements, built-in diode, and thermistor. It has a max voltage of 600V, current of 150A, and turn off time of 450ns. Ideal for applications requiring high power efficiency and temperature resistance like industrial motor drives.

ISOLATED

150 A

600 V

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

R-XUFM-X35

6

35

175 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

SILICON

450 ns

180 ns

FF100R12KS4HOSA1 by Infineon Technologies

FF100R12KS4HOSA1

Infineon Technologies

N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 150 A; Package Body Material: UNSPECIFIED; No. of Elements: 2;

ISOLATED

150 A

1200 V

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

R-XUFM-X7

2

7

150 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

SILICON

590 ns

180 ns

F3L150R07W2E3B11BOMA1 by Infineon Technologies

F3L150R07W2E3B11BOMA1

Infineon Technologies

Infineon's F3L150R07W2E3B11BOMA1 IGBT features N-CHANNEL polarity, 650V VCEmax, and 150A IC. Ideal for power control applications with a max operating temp of 150°C. Complex configuration with 4 elements, 480ns toff, and 155ns ton for efficient power management.

ISOLATED

150 A

650 V

COMPLEX

6.5 V

20 V

R-XUFM-X34

4

34

150 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

335 W

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

480 ns

155 ns

1.9 V

CM150TX-24S1 by Mitsubishi Electric

CM150TX-24S1

Mitsubishi Electric

Mitsubishi Electric's CM150TX-24S1 IGBT is an N-channel transistor with 6 elements, ideal for motor control applications. With a max VCEsat of 2.25V and IC of 150A, it offers efficient power dissipation up to 935W. Operating b/w -40°C to 150°C, it features fast rise/fall times (tr/tf) of 200/300ns for precise control.

ISOLATED

150 A

1200 V

COMPLEX

300 ns

6.6 V

20 V

R-PUFM-X35

e3

6

35

150 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

935 W

UL RECOGNIZED

200 ns

NO

TIN

UNSPECIFIED

UPPER

MOTOR CONTROL

SILICON

900 ns

1000 ns

2.25 V

MG06100S-BR1MM by Littelfuse

MG06100S-BR1MM

Littelfuse

The Littelfuse MG06100S-BR1MM is a N-CHANNEL IGBT with 2 SERIES CONNECTED elements. It has a max voltage of 600V, max current of 150A, and turn off time of 390ns. Ideal for POWER CONTROL applications, it operates b/w -40 to 150°C with UL RECOGNIZED standard compliance.

ISOLATED

150 A

600 V

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

5.5 V

20 V

R-XUFM-X7

2

7

150 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

UL RECOGNIZED

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

390 ns

95 ns

MG12105S-BA1MM by Littelfuse

MG12105S-BA1MM

Littelfuse

N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 150 A; Terminal Position: UPPER; Transistor Element Material: SILICON;

ISOLATED

150 A

1200 V

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

7 V

20 V

R-XUFM-X7

2

7

150 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

UL RECOGNIZED

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

565 ns

195 ns

QID4515001 by Powerex

QID4515001

Powerex

Powerex QID4515001 is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements. It has a Max VCEsat of 3.9V and can handle a Max Collector Current of 150A. Ideal for POWER CONTROL applications due to its high power dissipation capability of 1440W and max operating temperature of 150°C.

ISOLATED

150 A

4500 V

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

1200 ns

7.5 V

20 V

R-PUFM-X8

2

8

150 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

1440 W

Not Qualified

IEC-60077-1; IEC-1287

500 ns

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

4700 ns

2000 ns

3.9 V

MG17100S-BN4MM by Littelfuse

MG17100S-BN4MM

Littelfuse

N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 150 A; Peak Reflow Temperature (C): NOT SPECIFIED; No. of Elements: 2;

ISOLATED

150 A

1700 V

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

6.4 V

20 V

R-XUFM-X7

2

7

125 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

UL RECOGNIZED

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

1100 ns

450 ns

2.45 V

FGH75T65SQDTL4 by Onsemi

FGH75T65SQDTL4

Onsemi

FGH75T65SQDTL4 by Onsemi is an N-CHANNEL IGBT with a max VCEsat of 2.1V and IC of 150A, ideal for POWER CONTROL applications. Featuring a package style of FLANGE MOUNT, it has a max operating temperature of 175 °C and turn-off time of 352ns, making it suitable for high-power systems.

RC-IGBT

150 A

650 V

SINGLE WITH BUILT-IN DIODE

6.4 V

20 V

TO-247

R-PSFM-T4

e3

1

4

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

375 W

NO

MATTE TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

352 ns

80 ns

2.1 V

IFS100B12N3E4PB11BPSA1 by Infineon Technologies

IFS100B12N3E4PB11BPSA1

Infineon Technologies

N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE, CURRENT SENSING RESISTOR AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 150 A; Minimum Operating Temperature: -40 Cel; Terminal Form: UNSPECIFIED;

ISOLATED

150 A

1200 V

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE, CURRENT SENSING RESISTOR AND THERMISTOR

R-XUFM-X34

6

34

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

UL RECOGNIZED

NO

UNSPECIFIED

UPPER

POWER CONTROL

SILICON

610 ns

210 ns

IFS100B17N3E4PB11BPSA1 by Infineon Technologies

IFS100B17N3E4PB11BPSA1

Infineon Technologies

N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE, CURRENT SENSING RESISTOR AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 150 A; No. of Terminals: 34; Reference Standard: UL RECOGNIZED;

ISOLATED

150 A

1700 V

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE, CURRENT SENSING RESISTOR AND THERMISTOR

R-XUFM-X34

6

34

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

UL RECOGNIZED

NO

UNSPECIFIED

UPPER

POWER CONTROL

SILICON

780 ns

260 ns

IKQ75N120CT2XKSA1 by Infineon Technologies

IKQ75N120CT2XKSA1

Infineon Technologies

IKQ75N120CT2XKSA1 by Infineon Technologies is an N-CHANNEL IGBT with VCEsat of 2.15V and IC of 150A. Ideal for POWER CONTROL applications, it has a max VCE of 1200V and can operate b/w -40 to 175 °C.

150 A

1200 V

SINGLE WITH BUILT-IN DIODE

6.5 V

20 V

TO-247

R-PSFM-T3

e3

1

3

175 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

938 W

NO

TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

372 ns

86 ns

2.15 V

IKY75N120CH3XKSA1 by Infineon Technologies

IKY75N120CH3XKSA1

Infineon Technologies

IKY75N120CH3XKSA1 by Infineon is an N-CHANNEL IGBT with 1200V max collector-emitter voltage and 150A max collector current. Ideal for power control applications, it has a single configuration with built-in diode and offers fast turn-off time of 468ns.

150 A

1200 V

SINGLE WITH BUILT-IN DIODE

TO-247

R-PSFM-T4

e3

1

4

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

NO

TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

468 ns

73 ns

FGY75T120SQDN by Onsemi

FGY75T120SQDN

Onsemi

FGY75T120SQDN by Onsemi is an N-CHANNEL IGBT with 1200V VCEsat, 150A IC, and 790W power dissipation. Ideal for power control applications, it features a built-in diode and operates b/w -55 to 175 °C.

150 A

1200 V

SINGLE WITH BUILT-IN DIODE

6.5 V

20 V

TO-247

R-PSFM-T3

e3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

790 W

NO

Matte Tin (Sn) - annealed

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

452 ns

136 ns

1.95 V

PCFG75T65MQF by Onsemi

PCFG75T65MQF

Onsemi

PCFG75T65MQF by Onsemi is an N-CHANNEL IGBT for POWER CONTROL applications. With a max VCEsat of 1.9V, it operates at -55 to 175 °C and handles up to 650V/150A. This surface-mount chip has a gate-emitter voltage of 20V and gate-emitter threshold voltage of 6.4V, making it suitable for high-power systems.

150 A

650 V

6.4 V

20 V

R-XUUC-N

1

175 Cel

-55 Cel

UNSPECIFIED

RECTANGULAR

UNCASED CHIP

NOT SPECIFIED

N-CHANNEL

YES

NO LEAD

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

1.9 V

FGY75T95LQDT by Onsemi

FGY75T95LQDT

Onsemi

FGY75T95LQDT by Onsemi is an N-CHANNEL IGBT with a max VCEsat of 1.69V and a max IC of 150A. Ideal for power control applications, it has a package style of FLANGE MOUNT and can operate b/w -55 to 175 °C temperature range.

FAST SWITCHING

150 A

950 V

SINGLE WITH BUILT-IN DIODE

6.4 V

20 V

TO-247

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

453 W

NO

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

666 ns

102 ns

1.69 V

FGY75T95SQDT by Onsemi

FGY75T95SQDT

Onsemi

FGY75T95SQDT by Onsemi is an N-CHANNEL IGBT with VCEsat of 2.11V, IC of 150A, and Pd of 434W. Ideal for POWER CONTROL applications due to its high voltage rating (VCEmax: 950V) and fast switching times (ton: 89.6ns, toff: 198.8ns). Package style is FLANGE MOUNT with PLASTIC/EPOXY body material.

RC-IGBT

150 A

950 V

SINGLE

6.4 V

20 V

TO-247

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

434 W

NO

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

198.8 ns

89.6 ns

2.11 V

F3L200R12N2H3B47BPSA1 by Infineon Technologies

F3L200R12N2H3B47BPSA1

Infineon Technologies

N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 150 A; Package Style (Meter): FLANGE MOUNT; Maximum Operating Temperature: 150 Cel;

ISOLATED

150 A

1200 V

COMPLEX

6.35 V

20 V

R-XUFM-X23

4

23

150 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

520 ns

253 ns

2.15 V

IKY75N120CS6XKSA1 by Infineon Technologies

IKY75N120CS6XKSA1

Infineon Technologies

IKY75N120CS6XKSA1 by Infineon Technologies is an N-CHANNEL IGBT with 1200V VCEsat, 150A IC, and 880W power dissipation. Ideal for POWER CONTROL applications due to its fast turn-off time of 331ns and built-in diode configuration. Operates b/w -40°C to 175°C temperature range.

150 A

1200 V

SINGLE WITH BUILT-IN DIODE

6.3 V

20 V

R-PSIP-T4

e3

1

4

175 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

N-CHANNEL

880 W

NO

TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

331 ns

64 ns

2.15 V

FGH75T65UPD-F155 by Onsemi

FGH75T65UPD-F155

Onsemi

FGH75T65UPD-F155 by Onsemi is an N-CHANNEL IGBT with a max VCEsat of 2.3V and a max IC of 150A. Ideal for POWER CONTROL applications, it has a package style of FLANGE MOUNT and can operate in temperatures ranging from -55 to 175 °C.

RC-IGBT

150 A

650 V

SINGLE WITH BUILT-IN DIODE

33 ns

7.5 V

20 V

TO-247

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

375 W

56 ns

NO

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

249 ns

197 ns

98 ns

87 ns

2.3 V

STGYA75H120DF2 by STMicroelectronics

STGYA75H120DF2

STMicroelectronics

STMicroelectronics' STGYA75H120DF2 is an N-CHANNEL IGBT with 1200V VCE, 150A IC, and 750W Pmax. Ideal for POWER CONTROL applications due to its low VCEsat of 2.6V and fast turn-off time of 406ns. Package style is FLANGE MOUNT with THROUGH-HOLE terminals.

COLLECTOR

150 A

1200 V

SINGLE WITH BUILT-IN DIODE

7 V

20 V

R-PSFM-T3

e3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

750 W

NO

MATTE TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

406 ns

95 ns

2.6 V