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AUTOMOTIVE SRAM 20

SRAM
Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Maximum Clock Frequency (fCLK) Input/Output Type JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Moisture Sensitivity Level (MSL) Nominal Negative Supply Voltage No. of Functions No. of Ports No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Output Enable Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Qualification Refresh Cycles Reverse Pinout Screening Level Maximum Seated Height Self Refresh Maximum Standby Current Minimum Standby Voltage Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Total Dose (V) Width
CY7C1021BN-15VXET by Cypress Semiconductor

CY7C1021BN-15VXET

Cypress Semiconductor

CY7C1021BN-15VXET by Cypress Semiconductor is a 64Kx16 SRAM with 15ns access time, operating at 5V. It features a small outline package and is suitable for automotive applications due to AEC-Q100 screening level. With common I/O type and 3-state output characteristics, it offers reliable memory storage in harsh environments.

15 ns

COMMON

R-PDSO-J44

e4

28.575 mm

1048576 bit

STANDARD SRAM

16

3

1

44

65536 words

64K

ASYNCHRONOUS

125 Cel

-40 Cel

64KX16

3-STATE

PLASTIC/EPOXY

SOJ

SOJ44,.44

RECTANGULAR

SMALL OUTLINE

PARALLEL

5

Not Qualified

AEC-Q100

3.7592 mm

.015 Amp

4.5 V

SRAMs

130 mA

5.5 V

4.5 V

5

YES

CMOS

AUTOMOTIVE

NICKEL PALLADIUM GOLD

J BEND

1.27 mm

DUAL

10.16 mm

CY7C1021BN-15ZSXET by Cypress Semiconductor

CY7C1021BN-15ZSXET

Cypress Semiconductor

CY7C1021BN-15ZSXET by Cypress Semiconductor is a 64KX16 SRAM with 15 ns access time, operating at 5V. It is designed for automotive applications, featuring a small outline package and thin profile. The memory IC has a max standby current of 0.015A and offers 3-STATE output characteristics.

15 ns

COMMON

R-PDSO-G44

e4

18.415 mm

1048576 bit

STANDARD SRAM

16

3

1

44

65536 words

64K

ASYNCHRONOUS

125 Cel

-40 Cel

64KX16

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP44,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

5

Not Qualified

AEC-Q100

1.194 mm

.015 Amp

4.5 V

SRAMs

130 mA

5.5 V

4.5 V

5

YES

CMOS

AUTOMOTIVE

NICKEL PALLADIUM GOLD

GULL WING

.8 mm

DUAL

20

10.16 mm

CY7C1041CV33-12ZSXE by Cypress Semiconductor

CY7C1041CV33-12ZSXE

Cypress Semiconductor

CY7C1041CV33-12ZSXE by Cypress Semiconductor is a 256KX16 SRAM with 3.3V supply, operating at -40 to 125 °C. It features 12 ns access time, 44 terminals in small outline package for automotive applications. With common I/O type and parallel technology, it offers 4194304 bit memory density.

12 ns

COMMON

R-PDSO-G44

e4

18.415 mm

4194304 bit

STANDARD SRAM

16

3

1

44

262144 words

256K

ASYNCHRONOUS

125 Cel

-40 Cel

256KX16

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP44,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

3.3

Not Qualified

AEC-Q100

1.194 mm

SRAMs

120 mA

3.6 V

3 V

3.3

YES

CMOS

AUTOMOTIVE

Nickel/Palladium/Gold (Ni/Pd/Au)

GULL WING

.8 mm

DUAL

20

10.16 mm

CY7C1020CV33-15ZSXET by Cypress Semiconductor

CY7C1020CV33-15ZSXET

Cypress Semiconductor

CY7C1020CV33-15ZSXET by Cypress Semiconductor is a 32KX16 SRAM with 3.3V supply, 15ns access time, and 44 terminals. Ideal for automotive applications due to AEC-Q100 screening level and small outline package. Operating in asynchronous mode, it offers common I/O type and 3-STATE output characteristics.

15 ns

COMMON

R-PDSO-G44

e4

18.415 mm

524288 bit

STANDARD SRAM

16

3

1

44

32768 words

32K

ASYNCHRONOUS

125 Cel

-40 Cel

32KX16

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP44,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

3.3

Not Qualified

AEC-Q100

1.194 mm

.01 Amp

3 V

SRAMs

85 mA

3.63 V

2.97 V

3.3

YES

CMOS

AUTOMOTIVE

NICKEL PALLADIUM GOLD

GULL WING

.8 mm

DUAL

20

10.16 mm

74HC670D,653 by NXP Semiconductors

74HC670D,653

NXP Semiconductors

STANDARD SRAM; Temperature Grade: AUTOMOTIVE; No. of Terminals: 16; Package Code: SOP; Package Shape: RECTANGULAR; No. of Words: 4 words;

59 ns

R-PDSO-G16

e4

9.9 mm

16 bit

STANDARD SRAM

4

1

1

1

16

4 words

4

ASYNCHRONOUS

125 Cel

-40 Cel

4X4

3-STATE

NO

PLASTIC/EPOXY

SOP

RECTANGULAR

SMALL OUTLINE

PARALLEL

260

Not Qualified

1.75 mm

6 V

2 V

5

YES

CMOS

AUTOMOTIVE

Nickel/Palladium/Gold (Ni/Pd/Au)

GULL WING

1.27 mm

DUAL

30

3.9 mm

74HC670DB,112 by NXP Semiconductors

74HC670DB,112

NXP Semiconductors

STANDARD SRAM; Temperature Grade: AUTOMOTIVE; No. of Terminals: 16; Package Code: SSOP; Package Shape: RECTANGULAR; Power Supplies (V): 2/6;

59 ns

R-PDSO-G16

e4

6.2 mm

16 bit

STANDARD SRAM

4

1

1

16

4 words

4

ASYNCHRONOUS

125 Cel

-40 Cel

4X4

PLASTIC/EPOXY

SSOP

SSOP16,.3

RECTANGULAR

SMALL OUTLINE, SHRINK PITCH

PARALLEL

2/6

Not Qualified

2 mm

Other Memory ICs

6 V

2 V

5

YES

CMOS

AUTOMOTIVE

NICKEL PALLADIUM GOLD

GULL WING

.65 mm

DUAL

5.3 mm

74HC670DB,118 by NXP Semiconductors

74HC670DB,118

NXP Semiconductors

STANDARD SRAM; Temperature Grade: AUTOMOTIVE; No. of Terminals: 16; Package Code: SSOP; Package Shape: RECTANGULAR; Length: 6.2 mm;

59 ns

R-PDSO-G16

e4

6.2 mm

16 bit

STANDARD SRAM

4

1

1

16

4 words

4

ASYNCHRONOUS

125 Cel

-40 Cel

4X4

PLASTIC/EPOXY

SSOP

RECTANGULAR

SMALL OUTLINE, SHRINK PITCH

PARALLEL

Not Qualified

2 mm

6 V

2 V

5

YES

CMOS

AUTOMOTIVE

NICKEL PALLADIUM GOLD

GULL WING

.65 mm

DUAL

5.3 mm

74HC670N,652 by NXP Semiconductors

74HC670N,652

NXP Semiconductors

STANDARD SRAM; Temperature Grade: AUTOMOTIVE; No. of Terminals: 16; Package Code: DIP; Package Shape: RECTANGULAR; Output Characteristics: 3-STATE;

59 ns

R-PDIP-T16

e4

21.6 mm

16 bit

STANDARD SRAM

4

1

1

16

4 words

4

ASYNCHRONOUS

125 Cel

-40 Cel

4X4

3-STATE

NO

PLASTIC/EPOXY

DIP

DIP16,.3

RECTANGULAR

IN-LINE

PARALLEL

2/6

Not Qualified

4.7 mm

Other Memory ICs

6 V

2 V

5

NO

CMOS

AUTOMOTIVE

NICKEL PALLADIUM GOLD

THROUGH-HOLE

2.54 mm

DUAL

7.62 mm

74HCT670D,652 by NXP Semiconductors

74HCT670D,652

NXP Semiconductors

STANDARD SRAM; Temperature Grade: AUTOMOTIVE; No. of Terminals: 16; Package Code: SOP; Package Shape: RECTANGULAR; Maximum Access Time: 60 ns;

60 ns

R-PDSO-G16

e4

9.9 mm

16 bit

STANDARD SRAM

4

1

1

1

16

4 words

4

ASYNCHRONOUS

125 Cel

-40 Cel

4X4

3-STATE

NO

PLASTIC/EPOXY

SOP

SOP16,.25

RECTANGULAR

SMALL OUTLINE

PARALLEL

5

Not Qualified

1.75 mm

Other Memory ICs

5.5 V

4.5 V

5

YES

CMOS

AUTOMOTIVE

NICKEL PALLADIUM GOLD

GULL WING

1.27 mm

DUAL

3.9 mm

74HCT670D,653 by NXP Semiconductors

74HCT670D,653

NXP Semiconductors

STANDARD SRAM; Temperature Grade: AUTOMOTIVE; No. of Terminals: 16; Package Code: SOP; Package Shape: RECTANGULAR; Terminal Form: GULL WING;

60 ns

R-PDSO-G16

e4

9.9 mm

16 bit

STANDARD SRAM

4

1

1

1

16

4 words

4

ASYNCHRONOUS

125 Cel

-40 Cel

4X4

3-STATE

NO

PLASTIC/EPOXY

SOP

RECTANGULAR

SMALL OUTLINE

PARALLEL

Not Qualified

1.75 mm

5.5 V

4.5 V

5

YES

CMOS

AUTOMOTIVE

NICKEL PALLADIUM GOLD

GULL WING

1.27 mm

DUAL

3.9 mm

23K640-E/P by Microchip Technology

23K640-E/P

Microchip Technology

23K640-E/P by Microchip Technology is a CMOS SRAM with 8Kx8 organization and 65536-bit memory density. It operates at a max clock frequency of 16 MHz and has a nominal voltage of 3V. This memory IC is commonly used in automotive applications due to its TS16949 screening level and temperature grade.

16 MHz

SEPARATE

R-PDIP-T8

e3

9.271 mm

65536 bit

STANDARD SRAM

8

1

1

8

8192 words

8K

SYNCHRONOUS

125 Cel

-40 Cel

8KX8

3-STATE

NO

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

3/3.3

Not Qualified

TS 16949

5.334 mm

.00001 Amp

2.7 V

SRAMs

10 mA

3.6 V

2.7 V

3

NO

CMOS

AUTOMOTIVE

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

7.62 mm

23K640-E/ST by Microchip Technology

23K640-E/ST

Microchip Technology

23K640-E/ST by Microchip Technology is a CMOS SRAM with 8Kx8 organization, operating at up to 16 MHz. It features separate I/O, 3-state output characteristics, and operates in automotive temperature grade applications.

16 MHz

SEPARATE

R-PDSO-G8

e3

4.4 mm

65536 bit

STANDARD SRAM

8

1

1

1

8

8192 words

8K

SYNCHRONOUS

125 Cel

-40 Cel

8KX8

3-STATE

NO

PLASTIC/EPOXY

TSSOP

TSSOP8,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

SERIAL

260

3/3.3

Not Qualified

TS 16949

1.2 mm

.00001 Amp

2.7 V

SRAMs

10 mA

3.6 V

2.7 V

3

YES

CMOS

AUTOMOTIVE

MATTE TIN

GULL WING

.65 mm

DUAL

40

3 mm

23K640T-E/ST by Microchip Technology

23K640T-E/ST

Microchip Technology

23K640T-E/ST by Microchip Technology is a 8Kx8 SRAM with 16MHz clock frequency, operating at -40 to 125°C. It has separate I/O, 3-state output, and serial interface. Ideal for automotive applications due to TS16949 screening level and low standby current of 0.00001A.

16 MHz

SEPARATE

R-PDSO-G8

e3

4.4 mm

65536 bit

STANDARD SRAM

8

1

1

1

8

8192 words

8K

SYNCHRONOUS

125 Cel

-40 Cel

8KX8

3-STATE

NO

PLASTIC/EPOXY

TSSOP

TSSOP8,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

SERIAL

260

3/3.3

Not Qualified

TS 16949

1.2 mm

.00001 Amp

2.7 V

SRAMs

10 mA

3.6 V

2.7 V

3

YES

CMOS

AUTOMOTIVE

MATTE TIN

GULL WING

.65 mm

DUAL

40

3 mm

CY7C1041CV33-20ZSXE by Cypress Semiconductor

CY7C1041CV33-20ZSXE

Cypress Semiconductor

CY7C1041CV33-20ZSXE by Cypress is a 256Kx16 SRAM with 3.3V supply, operating at -40 to 125°C. It features asynchronous mode, 20ns access time, and AEC-Q100 screening for automotive applications. The memory IC has a compact thin profile package with 0.8mm terminal pitch suitable for space-constrained designs.

20 ns

COMMON

R-PDSO-G44

e4

18.415 mm

4194304 bit

STANDARD SRAM

16

3

1

44

262144 words

256K

ASYNCHRONOUS

125 Cel

-40 Cel

256KX16

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP44,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

3.3

Not Qualified

AEC-Q100

1.194 mm

.015 Amp

3 V

SRAMs

75 mA

3.6 V

3 V

3.3

YES

CMOS

AUTOMOTIVE

Nickel/Palladium/Gold (Ni/Pd/Au)

GULL WING

.8 mm

DUAL

20

10.16 mm

IS64C6416AL-15TLA3 by Integrated Silicon Solution

IS64C6416AL-15TLA3

Integrated Silicon Solution

IS64C6416AL-15TLA3 by Integrated Silicon Solution is a 64Kx16 SRAM with 5V supply, 15ns access time, and AEC-Q100 screening. Ideal for automotive applications due to its small outline package and wide operating temperature range from -40°C to 125°C. With common I/O type and 3-state output characteristics, it offers reliable performance in demanding environments.

15 ns

COMMON

R-PDSO-G44

e3

18.415 mm

1048576 bit

STANDARD SRAM

16

1

44

65536 words

64K

ASYNCHRONOUS

125 Cel

-40 Cel

64KX16

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP44,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

260

5

Not Qualified

AEC-Q100

1.2 mm

.000125 Amp

2 V

SRAMs

60 mA

5.5 V

4.5 V

5

YES

CMOS

AUTOMOTIVE

MATTE TIN

GULL WING

.8 mm

DUAL

10

10.16 mm

IS64WV102416BLL-10MA3 by Integrated Silicon Solution

IS64WV102416BLL-10MA3

Integrated Silicon Solution

IS64WV102416BLL-10MA3 by Integrated Silicon Solution is a 1MX16 SRAM with 3.3V supply, 10ns access time, and 125°C operating temp. Ideal for automotive applications due to AEC-Q100 screening level and thin profile grid array package.

10 ns

COMMON

R-PBGA-B48

e0

11 mm

16777216 bit

STANDARD SRAM

16

3

1

48

1048576 words

1M

ASYNCHRONOUS

125 Cel

-40 Cel

1MX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA48,6X8,30

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

2.5/3.3

Not Qualified

AEC-Q100

1.2 mm

.05 Amp

1.2 V

SRAMs

140 mA

3.6 V

2.4 V

3.3

YES

CMOS

AUTOMOTIVE

TIN LEAD

BALL

.75 mm

BOTTOM

9 mm

CY7C1021BN-15VXE by Cypress Semiconductor

CY7C1021BN-15VXE

Cypress Semiconductor

CY7C1021BN-15VXE by Cypress Semiconductor is a 64KX16 SRAM with 15 ns access time, operating at 5V. It features a small outline package and is AEC-Q100 qualified for automotive applications. This asynchronous memory has 44 terminals, offers 3-STATE output characteristics, and supports common I/O type.

15 ns

COMMON

R-PDSO-J44

e4

28.575 mm

1048576 bit

STANDARD SRAM

16

3

1

44

65536 words

64K

ASYNCHRONOUS

125 Cel

-40 Cel

64KX16

3-STATE

PLASTIC/EPOXY

SOJ

SOJ44,.44

RECTANGULAR

SMALL OUTLINE

PARALLEL

260

5

Not Qualified

AEC-Q100

3.7592 mm

.015 Amp

4.5 V

SRAMs

130 mA

5.5 V

4.5 V

5

YES

CMOS

AUTOMOTIVE

NICKEL PALLADIUM GOLD

J BEND

1.27 mm

DUAL

40

10.16 mm

23LC1024T-E/SN by Microchip Technology

23LC1024T-E/SN

Microchip Technology

23LC1024T-E/SN by Microchip Technology is a synchronous SRAM with 128KX8 organization and 1048576 bit memory density. It operates at a max clock frequency of 16 MHz and has a min standby voltage of 2.5 V. This memory IC is commonly used in automotive applications due to its TS 16949 screening level and temperature grade.

16 MHz

COMMON/SEPARATE

R-PDSO-G8

e3

4.9 mm

1048576 bit

STANDARD SRAM

8

1

1

1

8

131072 words

128K

SYNCHRONOUS

125 Cel

-40 Cel

128KX8

3-STATE

NO

PLASTIC/EPOXY

SOP

SOP8,.23

RECTANGULAR

SMALL OUTLINE

SERIAL

260

3/5

Not Qualified

TS 16949

1.75 mm

.00002 Amp

2.5 V

SRAMs

10 mA

5.5 V

2.5 V

5

YES

CMOS

AUTOMOTIVE

MATTE TIN

GULL WING

1.27 mm

DUAL

3.9 mm

IS64WV204816BLL-12CTLA3 by Integrated Silicon Solution

IS64WV204816BLL-12CTLA3

Integrated Silicon Solution

IS64WV204816BLL-12CTLA3 by Integrated Silicon Solution is a 2MX16 SRAM with 33554432-bit memory density. It operates asynchronously at a max speed of 12 ns and supports a supply voltage range from 2.4V to 3.6V. Ideal for automotive applications, this small outline, thin profile memory IC offers reliable parallel data storage in compact systems.

12 ns

R-PDSO-G48

18.4 mm

33554432 bit

STANDARD SRAM

16

1

48

2097152 words

2M

ASYNCHRONOUS

125 Cel

-40 Cel

2MX16

PLASTIC/EPOXY

TSOP1

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

PARALLEL

NOT SPECIFIED

1.2 mm

3.6 V

2.4 V

3

YES

CMOS

AUTOMOTIVE

GULL WING

.5 mm

DUAL

NOT SPECIFIED

12 mm

IS64WV102416BLL-10MLA3-TR by Integrated Silicon Solution

IS64WV102416BLL-10MLA3-TR

Integrated Silicon Solution

IS64WV102416BLL-10MLA3-TR by Integrated Silicon Solution is a 1MX16 SRAM with 10ns access time, operating at 3.3V. It features a thin profile grid array package suitable for automotive applications. This CMOS memory IC has a density of 16Mbit and operates in parallel mode with a temperature range of -40 to 125°C.

10 ns

R-PBGA-B48

11 mm

16777216 bit

STANDARD SRAM

16

1

48

1048576 words

1M

ASYNCHRONOUS

125 Cel

-40 Cel

1MX16

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

1.2 mm

3.6 V

2.4 V

3.3

YES

CMOS

AUTOMOTIVE

BALL

.75 mm

BOTTOM

9 mm