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TBGA SRAM 9

SRAM
Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Maximum Clock Frequency (fCLK) Input/Output Type JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Moisture Sensitivity Level (MSL) Nominal Negative Supply Voltage No. of Functions No. of Ports No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Output Enable Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Qualification Refresh Cycles Reverse Pinout Screening Level Maximum Seated Height Self Refresh Maximum Standby Current Minimum Standby Voltage Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Total Dose (V) Width
IS61VPS204836B-250B3LI by Integrated Silicon Solution

IS61VPS204836B-250B3LI

Integrated Silicon Solution

IS61VPS204836B-250B3LI by Integrated Silicon Solution is a 2MX36 CACHE SRAM with 250 MHz clock frequency, 2.5V supply voltage, and 2.6 ns access time. It is ideal for industrial applications requiring fast and synchronous memory operations in a compact GRID ARRAY package with thin profile design.

2.6 ns

250 MHz

COMMON

R-PBGA-B165

e1

15 mm

75497472 bit

CACHE SRAM

36

3

1

165

2097152 words

2M

SYNCHRONOUS

85 Cel

-40 Cel

2MX36

3-STATE

PLASTIC/EPOXY

TBGA

BGA165,11X15,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

260

2.5

Not Qualified

1.2 mm

2.38 V

SRAMs

2.625 V

2.375 V

2.5

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

10

13 mm

71V3559S75BQI8 by Integrated Device Technology

71V3559S75BQI8

Integrated Device Technology

71V3559S75BQI8 by Integrated Device Technology is a CACHE SRAM with 256KX18 organization, operating at 3.3V. It features synchronous operation, thin profile grid array package style, and 7.5 ns max access time. Ideal for industrial applications requiring fast and reliable memory performance in a compact form factor.

7.5 ns

R-PBGA-B165

e0

15 mm

4718592 bit

CACHE SRAM

18

3

1

165

262144 words

256K

SYNCHRONOUS

85 Cel

-40 Cel

256KX18

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

225

1.2 mm

3.465 V

3.135 V

3.3

YES

CMOS

INDUSTRIAL

TIN LEAD

BALL

1 mm

BOTTOM

13 mm

IS61LPS25636A-200B3LI by Integrated Silicon Solution

IS61LPS25636A-200B3LI

Integrated Silicon Solution

IS61LPS25636A-200B3LI by Integrated Silicon Solution is a 256Kx36 CACHE SRAM with 3-STATE output, operating at up to 200 MHz. It features a synchronous mode and operates on a supply voltage of 2.5/3.3V, making it suitable for industrial applications requiring fast access times and high memory density. The package style is grid array with thin profile, ideal for space-constrained designs.

3.1 ns

PIPELINED ARCHITECTURE

200 MHz

COMMON

R-PBGA-B165

e1

15 mm

9437184 bit

CACHE SRAM

36

1

165

262144 words

256K

SYNCHRONOUS

85 Cel

-40 Cel

256KX36

3-STATE

PLASTIC/EPOXY

TBGA

BGA165,11X15,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

260

2.5/3.3,3.3

Not Qualified

1.2 mm

.105 Amp

3.14 V

SRAMs

275 mA

3.465 V

3.135 V

3.3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

10

13 mm

IS61VPS204836B-250B3L-TR by Integrated Silicon Solution

IS61VPS204836B-250B3L-TR

Integrated Silicon Solution

IS61VPS204836B-250B3L-TR by Integrated Silicon Solution is a 2MX36 CACHE SRAM with 75497472 bit memory density. It operates at 2.5V, has a memory width of 36 bits, and offers a max access time of 2.8 ns. Ideal for applications requiring fast synchronous memory with high storage capacity in commercial temperature environments.

2.8 ns

PIPELINED ARCHITECTURE

R-PBGA-B165

15 mm

75497472 bit

CACHE SRAM

36

1

165

2097152 words

2M

SYNCHRONOUS

70 Cel

0 Cel

2MX36

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

NOT SPECIFIED

1.2 mm

2.625 V

2.375 V

2.5

YES

CMOS

COMMERCIAL

BALL

1 mm

BOTTOM

NOT SPECIFIED

13 mm

IS61VPS204836B-250B3LI-TR by Integrated Silicon Solution

IS61VPS204836B-250B3LI-TR

Integrated Silicon Solution

IS61VPS204836B-250B3LI-TR by Integrated Silicon Solution is a 2MX36 CACHE SRAM with 75497472 bit memory density. It operates in synchronous mode at 2.5V, with a max access time of 2.8 ns. Ideal for industrial applications requiring fast and reliable parallel memory solutions.

2.8 ns

PIPELINED ARCHITECTURE

R-PBGA-B165

15 mm

75497472 bit

CACHE SRAM

36

1

165

2097152 words

2M

SYNCHRONOUS

85 Cel

-40 Cel

2MX36

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

NOT SPECIFIED

1.2 mm

2.625 V

2.375 V

2.5

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOT SPECIFIED

13 mm

IS66WVH16M8ALL-166B1LI-TR by Integrated Silicon Solution

IS66WVH16M8ALL-166B1LI-TR

Integrated Silicon Solution

IS66WVH16M8ALL-166B1LI-TR by Integrated Silicon Solution is a 16MX8 SRAM with a package body material of PLASTIC/EPOXY. It operates in synchronous mode with a nominal voltage of 1.8V and has a memory density of 134217728 bits. This memory IC type is commonly used in industrial applications requiring high-speed data storage.

R-PBGA-B24

8 mm

134217728 bit

PSEUDO STATIC RAM

8

1

24

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX8

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

NOT SPECIFIED

1.2 mm

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOT SPECIFIED

6 mm

IS66WVH8M8ALL-166B1LI-TR by Integrated Silicon Solution

IS66WVH8M8ALL-166B1LI-TR

Integrated Silicon Solution

IS66WVH8M8ALL-166B1LI-TR by Integrated Silicon Solution is an 8MX8 SRAM with 67108864-bit memory density. Operating at 1.8V, it offers a synchronous mode with a max access time of 36ns. Ideal for industrial applications requiring high-speed parallel memory solutions.

36 ns

R-PBGA-B24

8 mm

67108864 bit

PSEUDO STATIC RAM

8

1

24

8388608 words

8M

SYNCHRONOUS

85 Cel

-40 Cel

8MX8

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

NOT SPECIFIED

1.2 mm

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOT SPECIFIED

6 mm

IS66WVH8M8BLL-100B1LI-TR by Integrated Silicon Solution

IS66WVH8M8BLL-100B1LI-TR

Integrated Silicon Solution

IS66WVH8M8BLL-100B1LI-TR by Integrated Silicon Solution is an 8MX8 SRAM with a memory density of 67108864 bit. It operates in synchronous mode with a max access time of 40 ns, suitable for industrial applications requiring fast and reliable parallel memory storage. The package style is grid array, thin profile, making it ideal for space-constrained designs.

40 ns

R-PBGA-B24

8 mm

67108864 bit

PSEUDO STATIC RAM

8

1

24

8388608 words

8M

SYNCHRONOUS

85 Cel

-40 Cel

8MX8

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

NOT SPECIFIED

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOT SPECIFIED

6 mm

IS66WVH8M8DALL-200B1LI by Integrated Silicon Solution

IS66WVH8M8DALL-200B1LI

Integrated Silicon Solution

IS66WVH8M8DALL-200B1LI is an 8MX8 SRAM with 200 MHz clock frequency, 1.7-1.95 V supply voltage, and 85°C operating temperature. Ideal for industrial applications requiring high-speed synchronous memory with a thin profile grid array package.

200 MHz

COMMON

R-PBGA-B24

8 mm

67108864 bit

PSEUDO STATIC RAM

8

1

1

24

8388608 words

8M

SYNCHRONOUS

85 Cel

-40 Cel

8MX8

3-STATE

NO

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

260

1.2 mm

.00004 Amp

1.7 V

40 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

6 mm