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SOJ SRAM 33

SRAM
Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Maximum Clock Frequency (fCLK) Input/Output Type JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Moisture Sensitivity Level (MSL) Nominal Negative Supply Voltage No. of Functions No. of Ports No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Output Enable Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Qualification Refresh Cycles Reverse Pinout Screening Level Maximum Seated Height Self Refresh Maximum Standby Current Minimum Standby Voltage Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Total Dose (V) Width
CY7C1021BN-15VXET by Cypress Semiconductor

CY7C1021BN-15VXET

Cypress Semiconductor

CY7C1021BN-15VXET by Cypress Semiconductor is a 64Kx16 SRAM with 15ns access time, operating at 5V. It features a small outline package and is suitable for automotive applications due to AEC-Q100 screening level. With common I/O type and 3-state output characteristics, it offers reliable memory storage in harsh environments.

15 ns

COMMON

R-PDSO-J44

e4

28.575 mm

1048576 bit

STANDARD SRAM

16

3

1

44

65536 words

64K

ASYNCHRONOUS

125 Cel

-40 Cel

64KX16

3-STATE

PLASTIC/EPOXY

SOJ

SOJ44,.44

RECTANGULAR

SMALL OUTLINE

PARALLEL

5

Not Qualified

AEC-Q100

3.7592 mm

.015 Amp

4.5 V

SRAMs

130 mA

5.5 V

4.5 V

5

YES

CMOS

AUTOMOTIVE

NICKEL PALLADIUM GOLD

J BEND

1.27 mm

DUAL

10.16 mm

CY7C1049D-10VXIT by Cypress Semiconductor

CY7C1049D-10VXIT

Cypress Semiconductor

CY7C1049D-10VXIT by Cypress is a 512Kx8 SRAM with 10ns access time, operating at 5V. It features a small outline package and 3-state output, suitable for industrial applications requiring fast and reliable memory storage. With parallel interface and common I/O type, it offers high performance in a compact form factor.

10 ns

COMMON

R-PDSO-J36

e4

23.495 mm

4194304 bit

STANDARD SRAM

8

3

1

36

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX8

3-STATE

PLASTIC/EPOXY

SOJ

SOJ36,.44

RECTANGULAR

SMALL OUTLINE

PARALLEL

260

5

Not Qualified

3.7592 mm

.01 Amp

2 V

SRAMs

90 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

Nickel/Palladium/Gold (Ni/Pd/Au)

J BEND

1.27 mm

DUAL

40

10.16 mm

CY7C199CNL-15VXIT by Cypress Semiconductor

CY7C199CNL-15VXIT

Cypress Semiconductor

CY7C199CNL-15VXIT by Cypress Semiconductor is a 32Kx8 SRAM with 3-STATE output, operating at -40 to 85°C. It has a supply voltage of 4.5-5.5V and max access time of 15ns. Ideal for industrial applications requiring fast, asynchronous memory with common I/O type in small outline package.

15 ns

COMMON

R-PDSO-J28

e4

17.907 mm

262144 bit

STANDARD SRAM

8

3

1

28

32768 words

32K

ASYNCHRONOUS

85 Cel

-40 Cel

32KX8

3-STATE

PLASTIC/EPOXY

SOJ

SOJ28,.34

RECTANGULAR

SMALL OUTLINE

PARALLEL

260

5

Not Qualified

3.556 mm

.00015 Amp

2 V

SRAMs

80 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

Nickel/Palladium/Gold (Ni/Pd/Au)

J BEND

1.27 mm

DUAL

30

7.5 mm

AS7C1024B-15JCNTR by Alliance Memory

AS7C1024B-15JCNTR

Alliance Memory

Alliance Memory's AS7C1024B-15JCNTR is a 128Kx8 SRAM with 15ns access time, ideal for commercial applications. Operating at 5V, it offers 1048576-bit memory density and features asynchronous mode. With a small outline package style, it is suitable for surface mount designs in various electronic devices.

15 ns

R-PDSO-J32

20.995 mm

1048576 bit

STANDARD SRAM

8

3

1

32

131072 words

128K

ASYNCHRONOUS

70 Cel

0 Cel

128KX8

PLASTIC/EPOXY

SOJ

RECTANGULAR

SMALL OUTLINE

PARALLEL

3.7084 mm

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

J BEND

1.27 mm

DUAL

10.16 mm

AS7C34096A-12JINTR by Alliance Memory

AS7C34096A-12JINTR

Alliance Memory

Alliance Memory's AS7C34096A-12JINTR is a 512Kx8 SRAM with 12ns access time, operating at 3.3V. Ideal for industrial applications, it offers parallel interface, small outline package style, and moisture sensitivity level of 3.

12 ns

R-PDSO-J36

e3/e6

23.495 mm

4194304 bit

STANDARD SRAM

8

3

1

36

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX8

PLASTIC/EPOXY

SOJ

RECTANGULAR

SMALL OUTLINE

PARALLEL

3.7592 mm

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

J BEND

1.27 mm

DUAL

10.16 mm

IDT71024S15TYI by Integrated Device Technology

IDT71024S15TYI

Integrated Device Technology

IDT71024S15TYI is a 128Kx8 SRAM with 15ns access time, operating at 5V. It features 3-STATE output and common I/O type, suitable for industrial applications requiring fast and reliable memory storage. This small outline package offers parallel interface with 32 terminals in a rectangular shape.

15 ns

COMMON

R-PDSO-J32

e0

20.96 mm

1048576 bit

STANDARD SRAM

8

3

1

32

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

3-STATE

PLASTIC/EPOXY

SOJ

SOJ32,.34

RECTANGULAR

SMALL OUTLINE

PARALLEL

225

5

Not Qualified

3.759 mm

.01 Amp

4.5 V

SRAMs

155 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

J BEND

1.27 mm

DUAL

30

7.62 mm

IDT71256SA20Y by Integrated Device Technology

IDT71256SA20Y

Integrated Device Technology

IDT71256SA20Y by Integrated Device Technology is a 32Kx8 SRAM with 20ns access time, operating at 5V. It features a small outline package and offers common I/O type with 3-STATE output characteristics. Ideal for applications requiring fast and reliable memory storage in commercial temperature environments.

20 ns

COMMON

R-PDSO-J28

e0

17.9324 mm

262144 bit

STANDARD SRAM

8

3

1

1

28

32768 words

32K

ASYNCHRONOUS

70 Cel

0 Cel

32KX8

3-STATE

YES

PLASTIC/EPOXY

SOJ

SOJ28,.34

RECTANGULAR

SMALL OUTLINE

PARALLEL

225

5

Not Qualified

3.556 mm

.015 Amp

4.5 V

SRAMs

145 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

J BEND

1.27 mm

DUAL

30

7.5184 mm

IDT71256SA25YI by Integrated Device Technology

IDT71256SA25YI

Integrated Device Technology

STANDARD SRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 28; Package Code: SOJ; Package Shape: RECTANGULAR; Nominal Supply Voltage / Vsup (V): 5;

25 ns

COMMON

R-PDSO-J28

e0

17.9324 mm

262144 bit

STANDARD SRAM

8

3

1

28

32768 words

32K

ASYNCHRONOUS

85 Cel

-40 Cel

32KX8

3-STATE

PLASTIC/EPOXY

SOJ

SOJ28,.34

RECTANGULAR

SMALL OUTLINE

PARALLEL

225

5

Not Qualified

3.556 mm

.015 Amp

4.5 V

SRAMs

145 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

Tin/Lead (Sn85Pb15)

J BEND

1.27 mm

DUAL

30

7.5184 mm

IS61C25616AL-10KLI by Integrated Silicon Solution

IS61C25616AL-10KLI

Integrated Silicon Solution

IS61C25616AL-10KLI by Integrated Silicon Solution is a 256KX16 SRAM with 10ns access time, operating at 5V. It features a small outline package and industrial temperature grade, suitable for applications requiring fast and reliable memory storage in harsh environments.

10 ns

R-PDSO-J44

e3

28.575 mm

4194304 bit

STANDARD SRAM

16

1

44

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX16

PLASTIC/EPOXY

SOJ

RECTANGULAR

SMALL OUTLINE

PARALLEL

260

Not Qualified

3.75 mm

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

MATTE TIN

J BEND

1.27 mm

DUAL

10

10.16 mm

CY7C1021BN-15VXIT by Cypress Semiconductor

CY7C1021BN-15VXIT

Cypress Semiconductor

CY7C1021BN-15VXIT by Cypress Semiconductor is a 64Kx16 SRAM with 15ns access time. Operating at 5V, it features a small outline package and industrial temperature grade. Ideal for applications requiring fast and reliable memory storage in harsh environments.

15 ns

R-PDSO-J44

e4

28.575 mm

1048576 bit

STANDARD SRAM

16

1

44

65536 words

64K

ASYNCHRONOUS

85 Cel

-40 Cel

64KX16

PLASTIC/EPOXY

SOJ

RECTANGULAR

SMALL OUTLINE

PARALLEL

Not Qualified

3.7592 mm

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

J BEND

1.27 mm

DUAL

10.16 mm

CY7C1021BN-15VXCT by Cypress Semiconductor

CY7C1021BN-15VXCT

Cypress Semiconductor

CY7C1021BN-15VXCT by Cypress Semiconductor is a 64Kx16 SRAM with 15ns access time, operating at 5V. It is used in commercial applications, featuring a small outline package and J bend terminal form for surface mount assembly.

15 ns

R-PDSO-J44

e4

28.575 mm

1048576 bit

STANDARD SRAM

16

1

44

65536 words

64K

ASYNCHRONOUS

70 Cel

0 Cel

64KX16

PLASTIC/EPOXY

SOJ

RECTANGULAR

SMALL OUTLINE

PARALLEL

Not Qualified

3.7592 mm

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

NICKEL PALLADIUM GOLD

J BEND

1.27 mm

DUAL

10.16 mm

IDT71024S12TYI8 by Integrated Device Technology

IDT71024S12TYI8

Integrated Device Technology

IDT71024S12TYI8 by Integrated Device Technology is a 128Kx8 SRAM with 12ns access time, operating at 5V. It features a small outline package and offers 3-STATE output characteristics. Ideal for industrial applications requiring fast and reliable memory storage in parallel configuration.

12 ns

COMMON

R-PDSO-J32

e0

20.96 mm

1048576 bit

STANDARD SRAM

8

3

1

32

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

3-STATE

PLASTIC/EPOXY

SOJ

SOJ32,.34

RECTANGULAR

SMALL OUTLINE

PARALLEL

225

5

Not Qualified

3.76 mm

.01 Amp

4.5 V

SRAMs

160 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

Tin/Lead (Sn85Pb15)

J BEND

1.27 mm

DUAL

30

7.62 mm

IDT71024S15TYI8 by Integrated Device Technology

IDT71024S15TYI8

Integrated Device Technology

IDT71024S15TYI8 by Integrated Device Technology is a 128Kx8 SRAM with 3-STATE output, operating at 5V. It features a max access time of 15ns and is suitable for industrial applications requiring fast and reliable memory storage in a small outline package. With parallel interface and common I/O type, it offers high performance in various electronic devices.

15 ns

COMMON

R-PDSO-J32

e0

20.96 mm

1048576 bit

STANDARD SRAM

8

3

1

32

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

3-STATE

PLASTIC/EPOXY

SOJ

SOJ32,.34

RECTANGULAR

SMALL OUTLINE

PARALLEL

225

5

Not Qualified

3.76 mm

.01 Amp

4.5 V

SRAMs

155 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

Tin/Lead (Sn85Pb15)

J BEND

1.27 mm

DUAL

30

7.62 mm

IS63LV1024L-12JL by Integrated Silicon Solution

IS63LV1024L-12JL

Integrated Silicon Solution

IS63LV1024L-12JL by Integrated Silicon Solution is a 128Kx8 SRAM with 12ns access time, operating at 3.3V. It features asynchronous mode, 3-STATE output, and common I/O type. Ideal for commercial applications requiring fast memory access in a small outline package.

12 ns

COMMON

R-PDSO-J32

e3

20.955 mm

1048576 bit

STANDARD SRAM

8

1

32

131072 words

128K

ASYNCHRONOUS

70 Cel

0 Cel

128KX8

3-STATE

PLASTIC/EPOXY

SOJ

SOJ32,.34

RECTANGULAR

SMALL OUTLINE

PARALLEL

260

3.3

Not Qualified

3.56 mm

.0015 Amp

2 V

SRAMs

90 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

MATTE TIN

J BEND

1.27 mm

DUAL

10

7.62 mm

IDT71256L35YI8 by Integrated Device Technology

IDT71256L35YI8

Integrated Device Technology

IDT71256L35YI8 by Integrated Device Technology is a 32Kx8 SRAM with 35ns access time, operating at 5V. It features a small outline package, industrial temperature grade, and asynchronous operation. Ideal for applications requiring fast and reliable memory storage in industrial environments.

35 ns

COMMON

R-PDSO-J28

e0

17.9324 mm

262144 bit

STANDARD SRAM

8

3

1

28

32768 words

32K

ASYNCHRONOUS

85 Cel

-40 Cel

32KX8

3-STATE

PLASTIC/EPOXY

SOJ

SOJ28,.34

RECTANGULAR

SMALL OUTLINE

PARALLEL

225

5

Not Qualified

3.556 mm

.0002 Amp

2 V

SRAMs

105 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

Tin/Lead (Sn85Pb15)

J BEND

1.27 mm

DUAL

30

7.5184 mm

IS61C1024AL-12KLI by Integrated Silicon Solution

IS61C1024AL-12KLI

Integrated Silicon Solution

IS61C1024AL-12KLI by Integrated Silicon Solution is a 128Kx8 SRAM with 12ns access time, operating at 5V. It features asynchronous mode, 3-STATE output, and GULL WING terminals. Ideal for industrial applications requiring fast and reliable memory storage in a compact small outline package.

12 ns

COMMON

R-PDSO-G32

e3

20.95 mm

1048576 bit

STANDARD SRAM

8

3

1

1

32

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

3-STATE

YES

PLASTIC/EPOXY

SOJ

SOJ32,.44

RECTANGULAR

SMALL OUTLINE

PARALLEL

260

5

Not Qualified

3.76 mm

.00045 Amp

2 V

SRAMs

50 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

Matte Tin (Sn) - annealed

GULL WING

1.27 mm

DUAL

10

10.16 mm

IDT71124S12YGI by Integrated Device Technology

IDT71124S12YGI

Integrated Device Technology

IDT71124S12YGI by Integrated Device Technology is a 128Kx8 SRAM with asynchronous operation, 3-STATE output, and 12 ns access time. It is ideal for industrial applications requiring fast and reliable memory storage in a small outline package. With a supply voltage range of 4.5V to 5.5V, this CMOS technology-based SRAM offers high performance in harsh environments.

12 ns

COMMON

R-PDSO-J32

e3

20.955 mm

1048576 bit

STANDARD SRAM

8

3

1

32

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

3-STATE

PLASTIC/EPOXY

SOJ

SOJ32,.44

RECTANGULAR

SMALL OUTLINE

PARALLEL

260

5

Not Qualified

3.683 mm

.01 Amp

4.5 V

SRAMs

160 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

Matte Tin (Sn) - annealed

J BEND

1.27 mm

DUAL

30

10.16 mm

IDT71124S12YGI8 by Integrated Device Technology

IDT71124S12YGI8

Integrated Device Technology

IDT71124S12YGI8 by Integrated Device Technology is a 128Kx8 SRAM with 12ns access time, operating at 5V. It features a small outline package and industrial temperature grade, suitable for applications requiring fast and reliable memory storage in harsh environments.

12 ns

COMMON

R-PDSO-J32

e3

20.955 mm

1048576 bit

STANDARD SRAM

8

3

1

32

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

3-STATE

PLASTIC/EPOXY

SOJ

SOJ32,.44

RECTANGULAR

SMALL OUTLINE

PARALLEL

260

5

Not Qualified

3.683 mm

.01 Amp

4.5 V

SRAMs

160 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

Matte Tin (Sn) - annealed

J BEND

1.27 mm

DUAL

30

10.16 mm

IDT71V256SA10YG8 by Integrated Device Technology

IDT71V256SA10YG8

Integrated Device Technology

IDT71V256SA10YG8 by Integrated Device Technology is a 32Kx8 CACHE SRAM with 10ns access time, operating at 3.3V. It features a small outline package, 3-STATE output characteristics, and J BEND terminal form. Ideal for applications requiring fast and reliable memory storage in commercial-grade environments.

10 ns

COMMON

R-PDSO-J28

e3

17.9324 mm

262144 bit

CACHE SRAM

8

3

1

1

28

32768 words

32K

ASYNCHRONOUS

70 Cel

0 Cel

32KX8

3-STATE

YES

PLASTIC/EPOXY

SOJ

SOJ28,.34

RECTANGULAR

SMALL OUTLINE

PARALLEL

260

3.3

Not Qualified

3.556 mm

.002 Amp

3 V

SRAMs

100 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

MATTE TIN

J BEND

1.27 mm

DUAL

40

7.5184 mm

CY7C106D-10VXI by Cypress Semiconductor

CY7C106D-10VXI

Cypress Semiconductor

CY7C106D-10VXI by Cypress Semiconductor is a 256KX4 SRAM with 10ns access time, operating at 5V. It features a small outline package and industrial temperature grade, suitable for parallel memory applications. With 262144 words and 1048576-bit density, it offers common I/O type and 3-STATE output characteristics.

10 ns

COMMON

R-PDSO-J28

e4

18.415 mm

1048576 bit

STANDARD SRAM

4

3

1

28

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX4

3-STATE

PLASTIC/EPOXY

SOJ

SOJ28,.44

RECTANGULAR

SMALL OUTLINE

PARALLEL

260

5

Not Qualified

3.7592 mm

.003 Amp

2 V

SRAMs

80 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

J BEND

1.27 mm

DUAL

30

10.16 mm

IS61LV5128AL-10KLI by Integrated Silicon Solution

IS61LV5128AL-10KLI

Integrated Silicon Solution

IS61LV5128AL-10KLI by Integrated Silicon Solution is a 512KX8 SRAM with 3.3V supply, 10ns access time, and 95mA max supply current. It's used in industrial applications requiring fast, common I/O asynchronous memory with 36 terminals and small outline package style.

10 ns

COMMON

R-PDSO-J36

e3

23.495 mm

4194304 bit

STANDARD SRAM

8

1

36

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX8

3-STATE

PLASTIC/EPOXY

SOJ

SOJ36,.44

RECTANGULAR

SMALL OUTLINE

PARALLEL

260

3.3

Not Qualified

3.75 mm

.02 Amp

3.14 V

SRAMs

95 mA

3.63 V

3.135 V

3.3

YES

CMOS

INDUSTRIAL

MATTE TIN

J BEND

1.27 mm

DUAL

10

10.16 mm

IS61C6416AL-12KI by Integrated Silicon Solution

IS61C6416AL-12KI

Integrated Silicon Solution

IS61C6416AL-12KI by Integrated Silicon Solution is a 64Kx16 SRAM with 12ns access time, operating at 5V. It features asynchronous mode, common I/O type, and 3-state output characteristics. Ideal for industrial applications requiring fast and reliable memory storage in a compact small outline package.

12 ns

COMMON

R-PDSO-J44

e0

28.575 mm

1048576 bit

STANDARD SRAM

16

3

1

44

65536 words

64K

ASYNCHRONOUS

85 Cel

-40 Cel

64KX16

3-STATE

PLASTIC/EPOXY

SOJ

SOJ44,.44

RECTANGULAR

SMALL OUTLINE

PARALLEL

5

Not Qualified

3.75 mm

.0001 Amp

2 V

SRAMs

55 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

J BEND

1.27 mm

DUAL

10.16 mm

IS61C6416AL-12KLI by Integrated Silicon Solution

IS61C6416AL-12KLI

Integrated Silicon Solution

IS61C6416AL-12KLI by Integrated Silicon Solution is a 64Kx16 SRAM with 12ns access time, operating at 5V. It features a small outline package, industrial temperature grade, and asynchronous mode. Ideal for applications requiring fast and reliable memory storage in harsh environments.

12 ns

COMMON

R-PDSO-J44

e3

28.575 mm

1048576 bit

STANDARD SRAM

16

1

44

65536 words

64K

ASYNCHRONOUS

85 Cel

-40 Cel

64KX16

3-STATE

PLASTIC/EPOXY

SOJ

SOJ44,.44

RECTANGULAR

SMALL OUTLINE

PARALLEL

260

5

Not Qualified

3.75 mm

.0001 Amp

2 V

SRAMs

55 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

MATTE TIN

J BEND

1.27 mm

DUAL

10

10.16 mm

IS63LV1024L-10JLI by Integrated Silicon Solution

IS63LV1024L-10JLI

Integrated Silicon Solution

IS63LV1024L-10JLI by Integrated Silicon Solution is a 128Kx8 SRAM with 3.3V supply, operating at -40 to 85°C. It features asynchronous operation, 10ns access time, and 3-STATE output. Ideal for industrial applications requiring fast and reliable memory storage in a compact small outline package.

10 ns

COMMON

R-PDSO-J32

e3

20.955 mm

1048576 bit

STANDARD SRAM

8

1

32

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

3-STATE

PLASTIC/EPOXY

SOJ

SOJ32,.34

RECTANGULAR

SMALL OUTLINE

PARALLEL

260

3.3

Not Qualified

3.56 mm

.0015 Amp

2 V

SRAMs

105 mA

3.45 V

3.15 V

3.3

YES

CMOS

INDUSTRIAL

MATTE TIN

J BEND

1.27 mm

DUAL

10

7.62 mm

CY7C1041D-10VXI by Cypress Semiconductor

CY7C1041D-10VXI

Cypress Semiconductor

STANDARD SRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 44; Package Code: SOJ; Package Shape: RECTANGULAR; Parallel or Serial: PARALLEL;

10 ns

COMMON

R-PDSO-J44

e4

28.575 mm

4194304 bit

STANDARD SRAM

16

3

1

44

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX16

3-STATE

PLASTIC/EPOXY

SOJ

SOJ44,.44

RECTANGULAR

SMALL OUTLINE

PARALLEL

260

5

Not Qualified

3.7592 mm

.01 Amp

2 V

SRAMs

90 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

J BEND

1.27 mm

DUAL

40

10.16 mm

CY7C1049D-10VXI by Cypress Semiconductor

CY7C1049D-10VXI

Cypress Semiconductor

CY7C1049D-10VXI by Cypress Semiconductor is a 512Kx8 SRAM with 10ns access time, operating at 5V. It features asynchronous mode, 3-STATE output, and common I/O type. Widely used in industrial applications for its small outline package and parallel interface.

10 ns

COMMON

R-PDSO-J36

e4

23.495 mm

4194304 bit

STANDARD SRAM

8

3

1

36

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX8

3-STATE

PLASTIC/EPOXY

SOJ

SOJ36,.44

RECTANGULAR

SMALL OUTLINE

PARALLEL

260

5

Not Qualified

3.7592 mm

.01 Amp

2 V

SRAMs

90 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

Nickel/Palladium/Gold (Ni/Pd/Au)

J BEND

1.27 mm

DUAL

40

10.16 mm

CY7C1399B-15VXI by Cypress Semiconductor

CY7C1399B-15VXI

Cypress Semiconductor

CY7C1399B-15VXI by Cypress Semiconductor is a 32KX8 CACHE SRAM with 3.3V supply, 15ns access time, and 3-STATE output. It operates in industrial temperature range and has a small outline package suitable for various parallel applications.

15 ns

COMMON

R-PDSO-J28

e4

17.907 mm

262144 bit

CACHE SRAM

8

3

1

28

32768 words

32K

ASYNCHRONOUS

85 Cel

-40 Cel

32KX8

3-STATE

PLASTIC/EPOXY

SOJ

SOJ28,.34

RECTANGULAR

SMALL OUTLINE

PARALLEL

260

3.3

Not Qualified

3.556 mm

.00002 Amp

2 V

SRAMs

50 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

Nickel/Palladium/Gold (Ni/Pd/Au)

J BEND

1.27 mm

DUAL

40

7.5 mm

IDT71256SA12YGI8 by Integrated Device Technology

IDT71256SA12YGI8

Integrated Device Technology

IDT71256SA12YGI8 by Integrated Device Technology is a 32Kx8 SRAM with 3-STATE output, operating at 5V. It features a max access time of 12ns and industrial temperature grade. Ideal for applications requiring fast and reliable memory storage in compact electronic devices.

12 ns

COMMON

R-PDSO-J28

e3

17.9324 mm

262144 bit

STANDARD SRAM

8

3

1

28

32768 words

32K

ASYNCHRONOUS

85 Cel

-40 Cel

32KX8

3-STATE

PLASTIC/EPOXY

SOJ

SOJ28,.34

RECTANGULAR

SMALL OUTLINE

PARALLEL

260

5

Not Qualified

3.556 mm

.015 Amp

4.5 V

SRAMs

160 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

MATTE TIN

J BEND

1.27 mm

DUAL

40

7.5184 mm

CY7C1021BN-15VXC by Cypress Semiconductor

CY7C1021BN-15VXC

Cypress Semiconductor

CY7C1021BN-15VXC by Cypress: 64KX16 SRAM with 15ns access time, 5V supply voltage, and 3-STATE output. Ideal for commercial applications requiring fast parallel memory operations in a compact SMALL OUTLINE package.

15 ns

COMMON

R-PDSO-J44

e4

28.575 mm

1048576 bit

STANDARD SRAM

16

3

1

44

65536 words

64K

ASYNCHRONOUS

70 Cel

0 Cel

64KX16

3-STATE

PLASTIC/EPOXY

SOJ

SOJ44,.44

RECTANGULAR

SMALL OUTLINE

PARALLEL

260

5

Not Qualified

3.7592 mm

.01 Amp

4.5 V

SRAMs

130 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

NICKEL PALLADIUM GOLD

J BEND

1.27 mm

DUAL

40

10.16 mm

CY7C1021BN-15VXI by Cypress Semiconductor

CY7C1021BN-15VXI

Cypress Semiconductor

CY7C1021BN-15VXI by Cypress Semiconductor is a 64KX16 SRAM with 15 ns access time, operating at 5V. It features 3-STATE output and is ideal for industrial applications requiring fast and reliable parallel memory storage. This small outline package offers common I/O type and dual terminal position for easy integration in various electronic devices.

15 ns

COMMON

R-PDSO-J44

e4

28.575 mm

1048576 bit

STANDARD SRAM

16

3

1

44

65536 words

64K

ASYNCHRONOUS

85 Cel

-40 Cel

64KX16

3-STATE

PLASTIC/EPOXY

SOJ

SOJ44,.44

RECTANGULAR

SMALL OUTLINE

PARALLEL

260

5

Not Qualified

3.7592 mm

.01 Amp

4.5 V

SRAMs

130 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

J BEND

1.27 mm

DUAL

40

10.16 mm

IDT71256SA12YGI by Integrated Device Technology

IDT71256SA12YGI

Integrated Device Technology

IDT71256SA12YGI by Integrated Device Technology is a 32Kx8 SRAM with 12ns access time, operating at 5V. It features a small outline package and asynchronous operation, suitable for industrial applications requiring fast and reliable memory storage. With 3-state output characteristics and common I/O type, it offers high performance in a compact form factor.

12 ns

COMMON

R-PDSO-J28

e3

17.9324 mm

262144 bit

STANDARD SRAM

8

3

1

28

32768 words

32K

ASYNCHRONOUS

85 Cel

-40 Cel

32KX8

3-STATE

PLASTIC/EPOXY

SOJ

SOJ28,.34

RECTANGULAR

SMALL OUTLINE

PARALLEL

260

5

Not Qualified

3.556 mm

.015 Amp

4.5 V

SRAMs

160 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

MATTE TIN

J BEND

1.27 mm

DUAL

40

7.5184 mm

CY7C1021BN-15VXE by Cypress Semiconductor

CY7C1021BN-15VXE

Cypress Semiconductor

CY7C1021BN-15VXE by Cypress Semiconductor is a 64KX16 SRAM with 15 ns access time, operating at 5V. It features a small outline package and is AEC-Q100 qualified for automotive applications. This asynchronous memory has 44 terminals, offers 3-STATE output characteristics, and supports common I/O type.

15 ns

COMMON

R-PDSO-J44

e4

28.575 mm

1048576 bit

STANDARD SRAM

16

3

1

44

65536 words

64K

ASYNCHRONOUS

125 Cel

-40 Cel

64KX16

3-STATE

PLASTIC/EPOXY

SOJ

SOJ44,.44

RECTANGULAR

SMALL OUTLINE

PARALLEL

260

5

Not Qualified

AEC-Q100

3.7592 mm

.015 Amp

4.5 V

SRAMs

130 mA

5.5 V

4.5 V

5

YES

CMOS

AUTOMOTIVE

NICKEL PALLADIUM GOLD

J BEND

1.27 mm

DUAL

40

10.16 mm

IS61C1024AL-12KLI-TR by Integrated Silicon Solution

IS61C1024AL-12KLI-TR

Integrated Silicon Solution

IS61C1024AL-12KLI-TR by Integrated Silicon Solution is a 128Kx8 SRAM with 12ns access time, operating at 5V. It features a small outline package, asynchronous operation, and 3-state output. Ideal for industrial applications requiring fast and reliable memory storage.

12 ns

COMMON

R-PDSO-J32

20.95 mm

1048576 bit

STANDARD SRAM

8

1

32

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

3-STATE

PLASTIC/EPOXY

SOJ

SOJ32,.44

RECTANGULAR

SMALL OUTLINE

PARALLEL

5

Not Qualified

3.76 mm

.00045 Amp

2 V

SRAMs

50 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

J BEND

1.27 mm

DUAL

10.16 mm