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PSEUDO STATIC RAM SRAM 36

SRAM
Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Maximum Clock Frequency (fCLK) Input/Output Type JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Moisture Sensitivity Level (MSL) Nominal Negative Supply Voltage No. of Functions No. of Ports No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Output Enable Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Qualification Refresh Cycles Reverse Pinout Screening Level Maximum Seated Height Self Refresh Maximum Standby Current Minimum Standby Voltage Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Total Dose (V) Width
W968D6DAGX7I by Winbond Electronics

W968D6DAGX7I

Winbond Electronics

Winbond Electronics' W968D6DAGX7I is a 16Mx16 SRAM with 1.8V supply, 70ns access time, and 3-STATE output. Ideal for industrial applications, it features a very thin profile grid array package with common I/O type and asynchronous operation mode.

70 ns

COMMON

R-PBGA-B54

8 mm

268435456 bit

PSEUDO STATIC RAM

16

1

1

54

16777216 words

16M

ASYNCHRONOUS

85 Cel

-40 Cel

16MX16

3-STATE

YES

PLASTIC/EPOXY

VFBGA

BGA54,6X9,30

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

NOT SPECIFIED

1.8

Not Qualified

1 mm

.0004 Amp

1.7 V

Other Memory ICs

40 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

.75 mm

BOTTOM

NOT SPECIFIED

6 mm

IS66WVE4M16EALL-70BLI by Integrated Silicon Solution

IS66WVE4M16EALL-70BLI

Integrated Silicon Solution

IS66WVE4M16EALL-70BLI by Integrated Silicon Solution is a 4MX16 Pseudo Static RAM with a memory density of 67108864 bit. It operates in asynchronous mode with a max access time of 70 ns and has a min standby voltage of 1.7 V. This SRAM is commonly used in industrial applications that require high-speed data storage and retrieval.

70 ns

COMMON

R-PBGA-B48

e1

8 mm

67108864 bit

PSEUDO STATIC RAM

16

3

1

1

48

4194304 words

4M

ASYNCHRONOUS

85 Cel

-40 Cel

4MX16

3-STATE

NO

PLASTIC/EPOXY

TFBGA

BGA48,6X8,30

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

260

NO

1.2 mm

.00015 Amp

1.7 V

25 mA

1.95 V

1.7 V

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.75 mm

BOTTOM

6 mm

MT45W4MW16PCGA-70IT by Micron Technology

MT45W4MW16PCGA-70IT

Micron Technology

PSEUDO STATIC RAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: VFBGA; Package Shape: RECTANGULAR; No. of Functions: 1;

70 ns

COMMON

R-PBGA-B48

e1

8 mm

67108864 bit

PSEUDO STATIC RAM

16

1

48

4194304 words

4M

ASYNCHRONOUS

85 Cel

-40 Cel

4MX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA48,6X8,30

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

260

1.8,1.8/3

Not Qualified

1 mm

.00014 Amp

Other Memory ICs

25 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.75 mm

BOTTOM

30

6 mm

MT45W4MW16PCGA-70LWT by Micron Technology

MT45W4MW16PCGA-70LWT

Micron Technology

PSEUDO STATIC RAM; Temperature Grade: OTHER; No. of Terminals: 48; Package Code: VFBGA; Package Shape: RECTANGULAR; Maximum Supply Current: 25 mA;

70 ns

COMMON

R-PBGA-B48

e1

8 mm

67108864 bit

PSEUDO STATIC RAM

16

1

48

4194304 words

4M

ASYNCHRONOUS

85 Cel

-30 Cel

4MX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA48,6X8,30

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

1.8,1.8/3

Not Qualified

1 mm

.00012 Amp

Other Memory ICs

25 mA

1.95 V

1.7 V

1.8

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

.75 mm

BOTTOM

6 mm

MT45W2MW16BGB-701IT by Micron Technology

MT45W2MW16BGB-701IT

Micron Technology

PSEUDO STATIC RAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 54; Package Code: VFBGA; Package Shape: RECTANGULAR; Terminal Form: BALL;

70 ns

SYNCHRONOUS BURST MODE ALSO POSSIBLE

COMMON

R-PBGA-B54

e1

8 mm

33554432 bit

PSEUDO STATIC RAM

16

1

54

2097152 words

2M

ASYNCHRONOUS

85 Cel

-40 Cel

2MX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA54,6X9,30

RECTANGULAR

GRID ARRAY

PARALLEL

260

1.8,1.8/3.3

Not Qualified

1 mm

.00011 Amp

Other Memory ICs

40 mA

1.95 V

1.7 V

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.75 mm

BOTTOM

30

6 mm

MT45W2MW16PGA-70IT by Micron Technology

MT45W2MW16PGA-70IT

Micron Technology

PSEUDO STATIC RAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: VFBGA; Package Shape: RECTANGULAR; Minimum Supply Voltage (Vsup): 1.7 V;

70 ns

COMMON

R-PBGA-B48

e1

8 mm

33554432 bit

PSEUDO STATIC RAM

16

1

48

2097152 words

2M

ASYNCHRONOUS

85 Cel

-40 Cel

2MX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA48,6X8,30

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

1.8,1.8/3

Not Qualified

1 mm

.00011 Amp

Other Memory ICs

20 mA

1.95 V

1.7 V

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.75 mm

BOTTOM

6 mm

MT45W8MW16BGX-856AT by Micron Technology

MT45W8MW16BGX-856AT

Micron Technology

PSEUDO STATIC RAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 54; Package Code: VFBGA; Package Shape: RECTANGULAR; JESD-30 Code: R-PBGA-B54;

85 ns

R-PBGA-B54

e1

10 mm

134217728 bit

PSEUDO STATIC RAM

16

1

54

8388608 words

8M

ASYNCHRONOUS

105 Cel

-40 Cel

8MX16

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

Not Qualified

1 mm

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.75 mm

BOTTOM

8 mm

MT45W2MW16BGB-701ITTR by Micron Technology

MT45W2MW16BGB-701ITTR

Micron Technology

PSEUDO STATIC RAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 54; Package Code: VFBGA; Package Shape: RECTANGULAR; JESD-30 Code: R-PBGA-B54;

70 ns

SYNCHRONOUS BURST MODE ALSO POSSIBLE

R-PBGA-B54

e1

8 mm

33554432 bit

PSEUDO STATIC RAM

16

1

54

2097152 words

2M

ASYNCHRONOUS

85 Cel

-40 Cel

2MX16

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

Not Qualified

1 mm

1.95 V

1.7 V

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.75 mm

BOTTOM

6 mm

MT45W2MW16PGA-70ITTR by Micron Technology

MT45W2MW16PGA-70ITTR

Micron Technology

PSEUDO STATIC RAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: VFBGA; Package Shape: RECTANGULAR; Maximum Access Time: 70 ns;

70 ns

R-PBGA-B48

e1

8 mm

33554432 bit

PSEUDO STATIC RAM

16

1

48

2097152 words

2M

ASYNCHRONOUS

85 Cel

-40 Cel

2MX16

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

Not Qualified

1 mm

1.95 V

1.7 V

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.75 mm

BOTTOM

6 mm

MT45W4MW16BCGB-701ITTR by Micron Technology

MT45W4MW16BCGB-701ITTR

Micron Technology

PSEUDO STATIC RAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 54; Package Code: VFBGA; Package Shape: RECTANGULAR; JESD-30 Code: R-PBGA-B54;

70 ns

R-PBGA-B54

e1

8 mm

67108864 bit

PSEUDO STATIC RAM

16

1

54

4194304 words

4M

SYNCHRONOUS

85 Cel

-40 Cel

4MX16

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

260

Not Qualified

1 mm

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.75 mm

BOTTOM

30

6 mm

MT45W4MW16BCGB-708WTTR by Micron Technology

MT45W4MW16BCGB-708WTTR

Micron Technology

PSEUDO STATIC RAM; Temperature Grade: OTHER; No. of Terminals: 54; Package Code: VFBGA; Package Shape: RECTANGULAR; Maximum Seated Height: 1 mm;

70 ns

R-PBGA-B54

e1

8 mm

67108864 bit

PSEUDO STATIC RAM

16

1

54

4194304 words

4M

SYNCHRONOUS

85 Cel

-30 Cel

4MX16

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

Not Qualified

1 mm

1.95 V

1.7 V

1.8

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

.75 mm

BOTTOM

6 mm

MT45W8MW16BGX-708WTTR by Micron Technology

MT45W8MW16BGX-708WTTR

Micron Technology

Micron Technology's MT45W8MW16BGX-708WTTR is a 8MX16 SRAM with 134217728 bit memory density. Operating at 1.8V, it offers a max access time of 70ns and features a parallel interface. Ideal for applications requiring fast and reliable data storage in compact electronic devices.

70 ns

R-PBGA-B54

e1

10 mm

134217728 bit

PSEUDO STATIC RAM

16

1

54

8388608 words

8M

ASYNCHRONOUS

85 Cel

-30 Cel

8MX16

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

260

Not Qualified

1 mm

1.95 V

1.7 V

1.8

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

.75 mm

BOTTOM

8 mm

MT45W4MW16BFB-706WT by Micron Technology

MT45W4MW16BFB-706WT

Micron Technology

PSEUDO STATIC RAM; Temperature Grade: OTHER; No. of Terminals: 54; Package Code: VFBGA; Package Shape: RECTANGULAR; Memory Width: 16;

70 ns

SYNCHRONOUS BURST MODE POSSIBLE

COMMON

R-PBGA-B54

e0

8 mm

67108864 bit

PSEUDO STATIC RAM

16

1

54

4194304 words

4M

ASYNCHRONOUS

85 Cel

-30 Cel

4MX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA54,6X9,30

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

1.8,1.8/3

Not Qualified

1 mm

.00012 Amp

Other Memory ICs

30 mA

1.95 V

1.7 V

1.8

YES

CMOS

OTHER

TIN LEAD

BALL

.75 mm

BOTTOM

6 mm

MT45W4MW16PFA-70IT by Micron Technology

MT45W4MW16PFA-70IT

Micron Technology

PSEUDO STATIC RAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: VFBGA; Package Shape: RECTANGULAR; Surface Mount: YES;

70 ns

COMMON

R-PBGA-B48

e0

8 mm

67108864 bit

PSEUDO STATIC RAM

16

1

48

4194304 words

4M

ASYNCHRONOUS

85 Cel

-40 Cel

4MX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA48,6X8,30

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

1.8,1.8/3

Not Qualified

1 mm

.00012 Amp

Other Memory ICs

25 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN LEAD

BALL

.75 mm

BOTTOM

6 mm

MT45W4MW16PFA-70WT by Micron Technology

MT45W4MW16PFA-70WT

Micron Technology

PSEUDO STATIC RAM; Temperature Grade: OTHER; No. of Terminals: 48; Package Code: VFBGA; Package Shape: RECTANGULAR; Terminal Finish: TIN LEAD;

70 ns

COMMON

R-PBGA-B48

e0

8 mm

67108864 bit

PSEUDO STATIC RAM

16

1

48

4194304 words

4M

ASYNCHRONOUS

85 Cel

-30 Cel

4MX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA48,6X8,30

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

1.8,1.8/3

Not Qualified

1 mm

.00012 Amp

Other Memory ICs

25 mA

1.95 V

1.7 V

1.8

YES

CMOS

OTHER

TIN LEAD

BALL

.75 mm

BOTTOM

6 mm

MT45W2MW16PABA-70IT by Micron Technology

MT45W2MW16PABA-70IT

Micron Technology

PSEUDO STATIC RAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: VFBGA; Package Shape: RECTANGULAR; Operating Mode: ASYNCHRONOUS;

70 ns

COMMON

R-PBGA-B48

e8

8 mm

33554432 bit

PSEUDO STATIC RAM

16

1

48

2097152 words

2M

ASYNCHRONOUS

85 Cel

-40 Cel

2MX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA48,6X8,30

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

260

1.8,1.8/3

Not Qualified

1 mm

.00011 Amp

Other Memory ICs

20 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn98.5Ag1.0Cu0.5)

BALL

.75 mm

BOTTOM

30

6 mm

MT45W2MW16PABA-70WT by Micron Technology

MT45W2MW16PABA-70WT

Micron Technology

PSEUDO STATIC RAM; Temperature Grade: OTHER; No. of Terminals: 48; Package Code: VFBGA; Package Shape: RECTANGULAR; Package Style (Meter): GRID ARRAY, VERY THIN PROFILE, FINE PITCH;

70 ns

COMMON

R-PBGA-B48

e8

8 mm

33554432 bit

PSEUDO STATIC RAM

16

1

48

2097152 words

2M

ASYNCHRONOUS

85 Cel

-25 Cel

2MX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA48,6X8,30

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

260

1.8,1.8/3

Not Qualified

1 mm

.00011 Amp

Other Memory ICs

20 mA

1.95 V

1.7 V

1.8

YES

CMOS

OTHER

Tin/Silver/Copper (Sn98.5Ag1.0Cu0.5)

BALL

.75 mm

BOTTOM

30

6 mm

MT45W2MW16PAFA-70IT by Micron Technology

MT45W2MW16PAFA-70IT

Micron Technology

PSEUDO STATIC RAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: VFBGA; Package Shape: RECTANGULAR; No. of Functions: 1;

70 ns

COMMON

R-PBGA-B48

e0

8 mm

33554432 bit

PSEUDO STATIC RAM

16

1

48

2097152 words

2M

ASYNCHRONOUS

85 Cel

-40 Cel

2MX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA48,6X8,30

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

1.8,1.8/3

Not Qualified

1 mm

.00011 Amp

Other Memory ICs

20 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN LEAD

BALL

.75 mm

BOTTOM

6 mm

MT45W2MW16PAFA-70WT by Micron Technology

MT45W2MW16PAFA-70WT

Micron Technology

PSEUDO STATIC RAM; Temperature Grade: OTHER; No. of Terminals: 48; Package Code: VFBGA; Package Shape: RECTANGULAR; No. of Words Code: 2M;

70 ns

COMMON

R-PBGA-B48

e0

8 mm

33554432 bit

PSEUDO STATIC RAM

16

1

48

2097152 words

2M

ASYNCHRONOUS

85 Cel

-25 Cel

2MX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA48,6X8,30

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

1.8,1.8/3

Not Qualified

1 mm

.00011 Amp

Other Memory ICs

20 mA

1.95 V

1.7 V

1.8

YES

CMOS

OTHER

TIN LEAD

BALL

.75 mm

BOTTOM

6 mm

MT45W2MW16PAFA-85WT by Micron Technology

MT45W2MW16PAFA-85WT

Micron Technology

PSEUDO STATIC RAM; Temperature Grade: OTHER; No. of Terminals: 48; Package Code: VFBGA; Package Shape: RECTANGULAR; Package Equivalence Code: BGA48,6X8,30;

85 ns

COMMON

R-PBGA-B48

e0

8 mm

33554432 bit

PSEUDO STATIC RAM

16

1

48

2097152 words

2M

ASYNCHRONOUS

85 Cel

-25 Cel

2MX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA48,6X8,30

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

1.8,1.8/3

Not Qualified

1 mm

.00011 Amp

Other Memory ICs

17 mA

1.95 V

1.7 V

1.8

YES

CMOS

OTHER

TIN LEAD

BALL

.75 mm

BOTTOM

6 mm

MT45W4MW16PBA-70IT by Micron Technology

MT45W4MW16PBA-70IT

Micron Technology

PSEUDO STATIC RAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: VFBGA; Package Shape: RECTANGULAR; Maximum Standby Current: .00012 Amp;

70 ns

COMMON

R-PBGA-B48

e8

8 mm

67108864 bit

PSEUDO STATIC RAM

16

1

48

4194304 words

4M

ASYNCHRONOUS

85 Cel

-40 Cel

4MX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA48,6X8,30

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

260

1.8,1.8/3

Not Qualified

1 mm

.00012 Amp

Other Memory ICs

25 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn98.5Ag1.0Cu0.5)

BALL

.75 mm

BOTTOM

30

6 mm

MT45W2MW16BABB-706LWT by Micron Technology

MT45W2MW16BABB-706LWT

Micron Technology

PSEUDO STATIC RAM; Temperature Grade: OTHER; No. of Terminals: 54; Package Code: VFBGA; Package Shape: RECTANGULAR; Length: 8 mm;

70 ns

COMMON

R-PBGA-B54

e1

8 mm

33554432 bit

PSEUDO STATIC RAM

16

1

54

2097152 words

2M

SYNCHRONOUS

85 Cel

-30 Cel

2MX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA54,6X9,30

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

260

1.8,1.8/3

Not Qualified

1 mm

.00009 Amp

Other Memory ICs

30 mA

1.95 V

1.7 V

1.8

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

.75 mm

BOTTOM

6 mm

MT45W2MW16BAFB-706WT by Micron Technology

MT45W2MW16BAFB-706WT

Micron Technology

PSEUDO STATIC RAM; Temperature Grade: OTHER; No. of Terminals: 54; Package Code: VFBGA; Package Shape: RECTANGULAR; Terminal Form: BALL;

70 ns

COMMON

R-PBGA-B54

e0

8 mm

33554432 bit

PSEUDO STATIC RAM

16

1

54

2097152 words

2M

SYNCHRONOUS

85 Cel

-30 Cel

2MX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA54,6X9,30

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

1.8,1.8/3

Not Qualified

1 mm

.00011 Amp

Other Memory ICs

30 mA

1.95 V

1.7 V

1.8

YES

CMOS

OTHER

TIN LEAD

BALL

.75 mm

BOTTOM

6 mm

MT45W2MW16BAFB-856WT by Micron Technology

MT45W2MW16BAFB-856WT

Micron Technology

PSEUDO STATIC RAM; Temperature Grade: OTHER; No. of Terminals: 54; Package Code: VFBGA; Package Shape: RECTANGULAR; Minimum Operating Temperature: -30 Cel;

85 ns

COMMON

R-PBGA-B54

e0

8 mm

33554432 bit

PSEUDO STATIC RAM

16

1

54

2097152 words

2M

SYNCHRONOUS

85 Cel

-30 Cel

2MX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA54,6X9,30

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

1.8,1.8/3

Not Qualified

1 mm

.00011 Amp

Other Memory ICs

30 mA

1.95 V

1.7 V

1.8

YES

CMOS

OTHER

TIN LEAD

BALL

.75 mm

BOTTOM

6 mm

MT45W2MW16BAFB-708WT by Micron Technology

MT45W2MW16BAFB-708WT

Micron Technology

PSEUDO STATIC RAM; Temperature Grade: OTHER; No. of Terminals: 54; Package Code: VFBGA; Package Shape: RECTANGULAR; Nominal Supply Voltage / Vsup (V): 1.8;

70 ns

COMMON

R-PBGA-B54

e0

8 mm

33554432 bit

PSEUDO STATIC RAM

16

1

54

2097152 words

2M

SYNCHRONOUS

85 Cel

-30 Cel

2MX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA54,6X9,30

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

1.8,1.8/3

Not Qualified

1 mm

.00011 Amp

Other Memory ICs

35 mA

1.95 V

1.7 V

1.8

YES

CMOS

OTHER

TIN LEAD

BALL

.75 mm

BOTTOM

6 mm

MT45W8MW16BGX-701IT by Micron Technology

MT45W8MW16BGX-701IT

Micron Technology

MT45W8MW16BGX-701IT by Micron Technology is a 1.8V SRAM with 8MX16 organization, operating in industrial temperature range. Featuring 3-STATE output and parallel interface, it offers 8388608 words memory density for applications requiring fast access time of 70ns.

70 ns

COMMON

R-PBGA-B54

e1

10 mm

134217728 bit

PSEUDO STATIC RAM

16

1

1

54

8388608 words

8M

ASYNCHRONOUS

85 Cel

-40 Cel

8MX16

3-STATE

YES

PLASTIC/EPOXY

VFBGA

BGA54,6X9,30

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

260

1.8,1.8/3

Not Qualified

1 mm

.0002 Amp

1.7 V

Other Memory ICs

35 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.75 mm

BOTTOM

8 mm

MT45W1MW16BDGB-701IT by Micron Technology

MT45W1MW16BDGB-701IT

Micron Technology

PSEUDO STATIC RAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 54; Package Code: VFBGA; Package Shape: RECTANGULAR; Organization: 1MX16;

70 ns

SYNCHRONOUS BURST MODE ALSO POSSIBLE

COMMON

R-PBGA-B54

e1

8 mm

16777216 bit

PSEUDO STATIC RAM

16

1

54

1048576 words

1M

ASYNCHRONOUS

85 Cel

-40 Cel

1MX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA54,6X9,30

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

1.8,1.8/3

Not Qualified

1 mm

.00007 Amp

1.7 V

Other Memory ICs

35 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.75 mm

BOTTOM

6 mm

MT45W1MW16PDGA-70IT by Micron Technology

MT45W1MW16PDGA-70IT

Micron Technology

PSEUDO STATIC RAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 48; Package Code: VFBGA; Package Shape: RECTANGULAR; Minimum Operating Temperature: -40 Cel;

70 ns

COMMON

R-PBGA-B48

e1

8 mm

16777216 bit

PSEUDO STATIC RAM

16

1

48

1048576 words

1M

ASYNCHRONOUS

85 Cel

-40 Cel

1MX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA48,6X8,30

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

1.8,1.8/3

Not Qualified

1 mm

.00007 Amp

1.7 V

Other Memory ICs

20 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.75 mm

BOTTOM

6 mm

MT45W4MW16BCGB-701WT by Micron Technology

MT45W4MW16BCGB-701WT

Micron Technology

PSEUDO STATIC RAM; Temperature Grade: OTHER; No. of Terminals: 54; Package Code: VFBGA; Package Shape: RECTANGULAR; Maximum Operating Temperature: 85 Cel;

70 ns

COMMON

R-PBGA-B54

e1

8 mm

67108864 bit

PSEUDO STATIC RAM

16

1

54

4194304 words

4M

SYNCHRONOUS

85 Cel

-30 Cel

4MX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA54,6X9,30

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

260

1.8,1.8/3

Not Qualified

1 mm

.00014 Amp

Other Memory ICs

35 mA

1.95 V

1.7 V

1.8

YES

CMOS

OTHER

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.75 mm

BOTTOM

30

6 mm

MT45W4MW16BCGB-708WT by Micron Technology

MT45W4MW16BCGB-708WT

Micron Technology

PSEUDO STATIC RAM; Temperature Grade: OTHER; No. of Terminals: 54; Package Code: VFBGA; Package Shape: RECTANGULAR; JESD-609 Code: e1;

70 ns

COMMON

R-PBGA-B54

e1

8 mm

67108864 bit

PSEUDO STATIC RAM

16

1

54

4194304 words

4M

SYNCHRONOUS

85 Cel

-30 Cel

4MX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA54,6X9,30

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

PARALLEL

1.8,1.8/3

Not Qualified

1 mm

.00014 Amp

Other Memory ICs

30 mA

1.95 V

1.7 V

1.8

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

.75 mm

BOTTOM

6 mm

IS66WVE4M16TBLL-70BLI by Integrated Silicon Solution

IS66WVE4M16TBLL-70BLI

Integrated Silicon Solution

IS66WVE4M16TBLL-70BLI by Integrated Silicon Solution is a 4MX16 SRAM with 3-STATE output, operating in asynchronous mode. It features a memory density of 67108864 bit and offers a max access time of 70 ns. Ideal for industrial applications requiring fast and reliable parallel memory operations at temperatures ranging from -40 to 85°C.

70 ns

COMMON

R-PBGA-B48

e1

8 mm

67108864 bit

PSEUDO STATIC RAM

16

1

1

48

4194304 words

4M

ASYNCHRONOUS

85 Cel

-40 Cel

4MX16

3-STATE

NO

PLASTIC/EPOXY

TFBGA

BGA48,6X8,30

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

260

NO

1.2 mm

.00015 Amp

2.7 V

25 mA

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.75 mm

BOTTOM

10

6 mm

IS66WVE4M16EALL-70BLI-TR by Integrated Silicon Solution

IS66WVE4M16EALL-70BLI-TR

Integrated Silicon Solution

IS66WVE4M16EALL-70BLI-TR by Integrated Silicon Solution is a 4MX16 SRAM with 67108864-bit memory density. It operates in asynchronous mode with a max access time of 70ns. Ideal for industrial applications requiring high-speed parallel memory solutions.

70 ns

R-PBGA-B48

8 mm

67108864 bit

PSEUDO STATIC RAM

16

1

48

4194304 words

4M

ASYNCHRONOUS

85 Cel

-40 Cel

4MX16

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

PARALLEL

NOT SPECIFIED

1.2 mm

1.95 V

1.7 V

YES

CMOS

INDUSTRIAL

BALL

.75 mm

BOTTOM

NOT SPECIFIED

6 mm

IS66WVH16M8ALL-166B1LI-TR by Integrated Silicon Solution

IS66WVH16M8ALL-166B1LI-TR

Integrated Silicon Solution

IS66WVH16M8ALL-166B1LI-TR by Integrated Silicon Solution is a 16MX8 SRAM with a package body material of PLASTIC/EPOXY. It operates in synchronous mode with a nominal voltage of 1.8V and has a memory density of 134217728 bits. This memory IC type is commonly used in industrial applications requiring high-speed data storage.

R-PBGA-B24

8 mm

134217728 bit

PSEUDO STATIC RAM

8

1

24

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX8

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

NOT SPECIFIED

1.2 mm

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOT SPECIFIED

6 mm

IS66WVH8M8ALL-166B1LI-TR by Integrated Silicon Solution

IS66WVH8M8ALL-166B1LI-TR

Integrated Silicon Solution

IS66WVH8M8ALL-166B1LI-TR by Integrated Silicon Solution is an 8MX8 SRAM with 67108864-bit memory density. Operating at 1.8V, it offers a synchronous mode with a max access time of 36ns. Ideal for industrial applications requiring high-speed parallel memory solutions.

36 ns

R-PBGA-B24

8 mm

67108864 bit

PSEUDO STATIC RAM

8

1

24

8388608 words

8M

SYNCHRONOUS

85 Cel

-40 Cel

8MX8

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

NOT SPECIFIED

1.2 mm

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOT SPECIFIED

6 mm

IS66WVH8M8BLL-100B1LI-TR by Integrated Silicon Solution

IS66WVH8M8BLL-100B1LI-TR

Integrated Silicon Solution

IS66WVH8M8BLL-100B1LI-TR by Integrated Silicon Solution is an 8MX8 SRAM with a memory density of 67108864 bit. It operates in synchronous mode with a max access time of 40 ns, suitable for industrial applications requiring fast and reliable parallel memory storage. The package style is grid array, thin profile, making it ideal for space-constrained designs.

40 ns

R-PBGA-B24

8 mm

67108864 bit

PSEUDO STATIC RAM

8

1

24

8388608 words

8M

SYNCHRONOUS

85 Cel

-40 Cel

8MX8

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

NOT SPECIFIED

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

NOT SPECIFIED

6 mm

IS66WVH8M8DALL-200B1LI by Integrated Silicon Solution

IS66WVH8M8DALL-200B1LI

Integrated Silicon Solution

IS66WVH8M8DALL-200B1LI is an 8MX8 SRAM with 200 MHz clock frequency, 1.7-1.95 V supply voltage, and 85°C operating temperature. Ideal for industrial applications requiring high-speed synchronous memory with a thin profile grid array package.

200 MHz

COMMON

R-PBGA-B24

8 mm

67108864 bit

PSEUDO STATIC RAM

8

1

1

24

8388608 words

8M

SYNCHRONOUS

85 Cel

-40 Cel

8MX8

3-STATE

NO

PLASTIC/EPOXY

TBGA

BGA24,5X5,40

RECTANGULAR

GRID ARRAY, THIN PROFILE

PARALLEL

260

1.2 mm

.00004 Amp

1.7 V

40 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

6 mm