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COMMERCIAL Other Function Memory ICs 57

Other Function Memory ICs
Part# Info Specs
Part RoHS Manufacturer Description Access Mode Maximum Access Time Additional Features Boot Block Maximum Clock Frequency (fCLK) Command User Interface Common Flash Interface Data Polling Minimum Data Retention Time Endurance Input/Output Type I2C Control Byte Interleaved Burst Length JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Mixed Memory Type Moisture Sensitivity Level (MSL) No. of Functions No. of Ports No. of Sectors/Size No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Page Size (words) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Programming Voltage (V) Qualification Refresh Cycles Reverse Pinout Screening Level Maximum Seated Height Sector Size (Words) Self Refresh Sequential Burst Length Serial Bus Type Maximum Standby Current Minimum Standby Voltage Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Toggle Bit Total Dose (V) Type Width Write Protection
MT9VDDT6472HY-40BF2 by Micron Technology

MT9VDDT6472HY-40BF2

Micron Technology

Other Memory ICs; Temperature Grade: COMMERCIAL; No. of Terminals: 200; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

.7 ns

200 MHz

COMMON

R-PDMA-N200

4831838208 bit

72

200

67108864 words

64M

70 Cel

0 Cel

64MX72

3-STATE

PLASTIC/EPOXY

DIMM

DIMM200,24

RECTANGULAR

MICROELECTRONIC ASSEMBLY

2.6

Not Qualified

8192

.045 Amp

Other Memory ICs

4050 mA

2.6

NO

CMOS

COMMERCIAL

NO LEAD

.6 mm

DUAL

MT9HTF3272Y-40EB2 by Micron Technology

MT9HTF3272Y-40EB2

Micron Technology

Other Memory ICs; Temperature Grade: COMMERCIAL; No. of Terminals: 240; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

.6 ns

200 MHz

COMMON

R-PDMA-N240

2415919104 bit

72

240

33554432 words

32M

70 Cel

0 Cel

32MX72

3-STATE

PLASTIC/EPOXY

DIMM

DIMM240,40

RECTANGULAR

MICROELECTRONIC ASSEMBLY

1.8

Not Qualified

8192

.045 Amp

Other Memory ICs

2070 mA

1.8

NO

CMOS

COMMERCIAL

NO LEAD

1 mm

DUAL

MT9VDDF3272Y-40BK1 by Micron Technology

MT9VDDF3272Y-40BK1

Micron Technology

Other Memory ICs; Temperature Grade: COMMERCIAL; No. of Terminals: 184; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

.7 ns

200 MHz

COMMON

R-PDMA-N184

2415919104 bit

72

184

33554432 words

32M

70 Cel

0 Cel

32MX72

3-STATE

PLASTIC/EPOXY

DIMM

DIMM184

RECTANGULAR

MICROELECTRONIC ASSEMBLY

2.6

Not Qualified

8192

.036 Amp

Other Memory ICs

4050 mA

2.6

NO

CMOS

COMMERCIAL

NO LEAD

1.27 mm

DUAL

MT18VDDF12872DG-335J1 by Micron Technology

MT18VDDF12872DG-335J1

Micron Technology

Other Memory ICs; Temperature Grade: COMMERCIAL; No. of Terminals: 184; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

.7 ns

166 MHz

COMMON

R-PDMA-N184

9663676416 bit

72

184

134217728 words

128M

70 Cel

0 Cel

128MX72

3-STATE

PLASTIC/EPOXY

DIMM

DIMM184

RECTANGULAR

MICROELECTRONIC ASSEMBLY

2.5

Not Qualified

8192

.09 Amp

Other Memory ICs

5220 mA

2.5

NO

CMOS

COMMERCIAL

NO LEAD

1.27 mm

DUAL

MT18HTF25672PKZ-667H1 by Micron Technology

MT18HTF25672PKZ-667H1

Micron Technology

Other Memory ICs; Temperature Grade: COMMERCIAL; No. of Terminals: 244; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

.45 ns

333 MHz

COMMON

R-PDMA-N244

19327352832 bit

72

244

268435456 words

256M

70 Cel

0 Cel

256MX72

3-STATE

PLASTIC/EPOXY

DIMM

DIMM244,24

RECTANGULAR

MICROELECTRONIC ASSEMBLY

1.8

Not Qualified

8192

Other Memory ICs

3870 mA

1.8

NO

CMOS

COMMERCIAL

NO LEAD

.6 mm

DUAL

MT9HVF6472PKZ-667G1 by Micron Technology

MT9HVF6472PKZ-667G1

Micron Technology

Other Memory ICs; Temperature Grade: COMMERCIAL; No. of Terminals: 244; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

.45 ns

333 MHz

COMMON

R-PDMA-N244

4831838208 bit

72

244

67108864 words

64M

70 Cel

0 Cel

64MX72

3-STATE

PLASTIC/EPOXY

DIMM

DIMM244,24

RECTANGULAR

MICROELECTRONIC ASSEMBLY

1.8

Not Qualified

8192

.063 Amp

Other Memory ICs

2160 mA

1.8

NO

CMOS

COMMERCIAL

NO LEAD

.6 mm

DUAL

MR256D08BMA45 by Everspin Technologies

MR256D08BMA45

Everspin Technologies

MR256D08BMA45 by Everspin Technologies is a 32KX8 memory circuit with a density of 262144 bits. It operates asynchronously at a nominal voltage of 3.3V and has a max access time of 45ns. This memory IC is suitable for various applications requiring high-speed data storage and retrieval.

45 ns

S-PBGA-B48

8 mm

262144 bit

MEMORY CIRCUIT

8

1

48

32768 words

32K

ASYNCHRONOUS

70 Cel

0 Cel

32KX8

PLASTIC/EPOXY

LFBGA

BGA48,6X8,30

SQUARE

GRID ARRAY, LOW PROFILE, FINE PITCH

260

3.3

Not Qualified

1.35 mm

.008 Amp

Other Memory ICs

65 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

BALL

.75 mm

BOTTOM

40

8 mm

MR256A08BMA35R by Everspin Technologies

MR256A08BMA35R

Everspin Technologies

MR256A08BMA35R by Everspin: 32KX8 memory IC with 262144 bit density, operates at 3.3V, and has a max access time of 35ns. Ideal for applications requiring low profile, fine pitch grid array packages in commercial temperature grade environments.

35 ns

S-PBGA-B48

8 mm

262144 bit

MEMORY CIRCUIT

8

1

48

32768 words

32K

ASYNCHRONOUS

70 Cel

0 Cel

32KX8

PLASTIC/EPOXY

LFBGA

BGA48,6X8,30

SQUARE

GRID ARRAY, LOW PROFILE, FINE PITCH

NOT SPECIFIED

3.3

Not Qualified

1.35 mm

.007 Amp

SRAMs

65 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

BALL

.75 mm

BOTTOM

NOT SPECIFIED

8 mm

MR256A08BMA35 by Everspin Technologies

MR256A08BMA35

Everspin Technologies

MR256A08BMA35 by Everspin: 32KX8 memory IC with 262144 bit density, operates at 3.3V, has 35ns access time. Ideal for commercial applications requiring low profile, fine pitch grid array package style.

35 ns

S-PBGA-B48

8 mm

262144 bit

MEMORY CIRCUIT

8

1

48

32768 words

32K

ASYNCHRONOUS

70 Cel

0 Cel

32KX8

PLASTIC/EPOXY

LFBGA

BGA48,6X8,30

SQUARE

GRID ARRAY, LOW PROFILE, FINE PITCH

NOT SPECIFIED

3.3

Not Qualified

1.35 mm

.007 Amp

SRAMs

65 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

BALL

.75 mm

BOTTOM

NOT SPECIFIED

8 mm

MR256A08BSO35R by Everspin Technologies

MR256A08BSO35R

Everspin Technologies

MR256A08BSO35R by Everspin Tech is a 32Kx8 memory IC with CMOS tech. Operating at 3.3V, it has a max access time of 35ns and standby current of 0.007Amp. Ideal for applications requiring high-speed data storage in commercial-grade environments.

35 ns

R-PDSO-G32

20.726 mm

262144 bit

MEMORY CIRCUIT

8

1

32

32768 words

32K

ASYNCHRONOUS

70 Cel

0 Cel

32KX8

PLASTIC/EPOXY

SOP

SOP32,.4

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

3.3

Not Qualified

2.54 mm

.007 Amp

SRAMs

65 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

GULL WING

1.25 mm

DUAL

NOT SPECIFIED

7.505 mm

MR256A08BSO35 by Everspin Technologies

MR256A08BSO35

Everspin Technologies

MR256A08BSO35 by Everspin: 32KX8 memory IC with 262144 bit density, operates at 3.3V, and has a max access time of 35ns. Ideal for commercial applications requiring small outline package style and asynchronous operation.

35 ns

R-PDSO-G32

20.726 mm

262144 bit

MEMORY CIRCUIT

8

1

32

32768 words

32K

ASYNCHRONOUS

70 Cel

0 Cel

32KX8

PLASTIC/EPOXY

SOP

SOP32,.4

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

3.3

Not Qualified

2.54 mm

.007 Amp

SRAMs

65 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

GULL WING

1.25 mm

DUAL

NOT SPECIFIED

7.505 mm

MR256A08BYS35R by Everspin Technologies

MR256A08BYS35R

Everspin Technologies

MR256A08BYS35R by Everspin Technologies is a 32Kx8 memory IC with CMOS technology. It operates asynchronously at 3.3V, has a max access time of 35ns, and consumes up to 65mA. This small outline, thin profile package is ideal for applications requiring fast and reliable memory storage in commercial temperature environments.

35 ns

R-PDSO-G44

18.41 mm

262144 bit

MEMORY CIRCUIT

8

1

44

32768 words

32K

ASYNCHRONOUS

70 Cel

0 Cel

32KX8

PLASTIC/EPOXY

TSOP2

TSOP44,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

NOT SPECIFIED

3.3

Not Qualified

1.2 mm

.007 Amp

SRAMs

65 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

GULL WING

.8 mm

DUAL

NOT SPECIFIED

10.16 mm

MR256A08BYS35 by Everspin Technologies

MR256A08BYS35

Everspin Technologies

MR256A08BYS35 by Everspin Technologies is a 32Kx8 memory IC with CMOS technology. It operates asynchronously at 3.3V, with a max access time of 35ns. This small outline, thin profile package is ideal for applications requiring high-speed memory solutions in commercial temperature environments.

35 ns

R-PDSO-G44

18.41 mm

262144 bit

MEMORY CIRCUIT

8

1

44

32768 words

32K

ASYNCHRONOUS

70 Cel

0 Cel

32KX8

PLASTIC/EPOXY

TSOP2

TSOP44,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

NOT SPECIFIED

3.3

Not Qualified

1.2 mm

.007 Amp

SRAMs

65 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

GULL WING

.8 mm

DUAL

NOT SPECIFIED

10.16 mm

MR0A16AMA35R by Everspin Technologies

MR0A16AMA35R

Everspin Technologies

MR0A16AMA35R by Everspin Technologies is a 64KX16 memory IC with 1048576 bit density. Operating at 3.3V, it features a max access time of 35ns and low profile grid array package style. Ideal for applications requiring fast asynchronous memory with high capacity in commercial temperature grade environments.

35 ns

S-PBGA-B48

8 mm

1048576 bit

MEMORY CIRCUIT

16

1

48

65536 words

64K

ASYNCHRONOUS

70 Cel

0 Cel

64KX16

PLASTIC/EPOXY

LFBGA

BGA48,6X8,30

SQUARE

GRID ARRAY, LOW PROFILE, FINE PITCH

NOT SPECIFIED

3.3

Not Qualified

1.35 mm

.012 Amp

SRAMs

155 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

BALL

.75 mm

BOTTOM

NOT SPECIFIED

8 mm

NP5Q128A13ESFC0E by Micron Technology

NP5Q128A13ESFC0E

Micron Technology

MEMORY CIRCUIT; Temperature Grade: COMMERCIAL; No. of Terminals: 16; Package Code: SOP; Package Shape: RECTANGULAR; Terminal Position: DUAL;

R-PDSO-G16

10.3 mm

134217728 bit

MEMORY CIRCUIT

1

1

16

134217728 words

128M

SYNCHRONOUS

70 Cel

0 Cel

128MX1

PLASTIC/EPOXY

SOP

SOP16,.4

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

3/3.3

Not Qualified

2.65 mm

.0002 Amp

SRAMs

50 mA

3.6 V

2.7 V

3

YES

CMOS

COMMERCIAL

GULL WING

1.27 mm

DUAL

NOT SPECIFIED

7.5 mm

NP8P128A13B1760E by Micron Technology

NP8P128A13B1760E

Micron Technology

MEMORY CIRCUIT; Temperature Grade: COMMERCIAL; No. of Terminals: 64; Package Code: TBGA; Package Shape: RECTANGULAR; No. of Words Code: 16M;

R-PBGA-B64

10 mm

134217728 bit

MEMORY CIRCUIT

8

1

64

16777216 words

16M

SYNCHRONOUS

70 Cel

0 Cel

16MX8

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

COMMERCIAL

BALL

1 mm

BOTTOM

8 mm

NP8P128A13BSM60E by Micron Technology

NP8P128A13BSM60E

Micron Technology

MEMORY CIRCUIT; Temperature Grade: COMMERCIAL; No. of Terminals: 56; Package Code: TSOP1; Package Shape: RECTANGULAR; Nominal Supply Voltage / Vsup (V): 3;

R-PDSO-G56

18.4 mm

134217728 bit

MEMORY CIRCUIT

8

1

56

16777216 words

16M

SYNCHRONOUS

70 Cel

0 Cel

16MX8

PLASTIC/EPOXY

TSOP1

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

COMMERCIAL

GULL WING

.5 mm

DUAL

14 mm

NP8P128A13T1760E by Micron Technology

NP8P128A13T1760E

Micron Technology

MEMORY CIRCUIT; Temperature Grade: COMMERCIAL; No. of Terminals: 64; Package Code: TBGA; Package Shape: RECTANGULAR; Memory Density: 134217728 bit;

R-PBGA-B64

10 mm

134217728 bit

MEMORY CIRCUIT

8

1

64

16777216 words

16M

SYNCHRONOUS

70 Cel

0 Cel

16MX8

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

COMMERCIAL

BALL

1 mm

BOTTOM

8 mm

NP8P128A13TSM60E by Micron Technology

NP8P128A13TSM60E

Micron Technology

MEMORY CIRCUIT; Temperature Grade: COMMERCIAL; No. of Terminals: 56; Package Code: TSOP1; Package Shape: RECTANGULAR; Surface Mount: YES;

R-PDSO-G56

18.4 mm

134217728 bit

MEMORY CIRCUIT

8

1

56

16777216 words

16M

SYNCHRONOUS

70 Cel

0 Cel

16MX8

PLASTIC/EPOXY

TSOP1

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

1.2 mm

3.6 V

2.7 V

3

YES

CMOS

COMMERCIAL

GULL WING

.5 mm

DUAL

14 mm

MR10Q010SCR by Everspin Technologies

MR10Q010SCR

Everspin Technologies

Everspin Technologies' MR10Q010SCR is a 128KX8 MEMORY CIRCUIT IC with 1048576 bit Memory Density. Operating at 3.3V, it features SYNCHRONOUS mode and has a small outline package style. Ideal for applications requiring high-speed memory access in commercial temperature environments.

R-PDSO-G16

10.34 mm

1048576 bit

MEMORY CIRCUIT

8

1

16

131072 words

128K

SYNCHRONOUS

70 Cel

0 Cel

128KX8

PLASTIC/EPOXY

SOP

SOP16,.4

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

1.8,3.3

Not Qualified

2.64 mm

.005 Amp

SRAMs

220 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

GULL WING

1.27 mm

DUAL

NOT SPECIFIED

7.52 mm

TMS4C1050-60DJ by Texas Instruments

TMS4C1050-60DJ

Texas Instruments

TMS4C1050-60DJ by Texas Instruments is a 20-terminal memory IC with 5V supply, operating b/w 0-70°C. It features a max access time of 60ns and standby current of 0.01A, suitable for commercial applications requiring fast memory circuits in small outline packages.

60 ns

R-PDSO-J20

MEMORY CIRCUIT

20

70 Cel

0 Cel

PLASTIC/EPOXY

SOJ

SOJ20/26,.34

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

5

Not Qualified

.01 Amp

Other Memory ICs

35 mA

5

YES

CMOS

COMMERCIAL

J BEND

1.27 mm

DUAL

NOT SPECIFIED

XC17S05PD8C by Xilinx

XC17S05PD8C

Xilinx

MEMORY CIRCUIT; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Length: 9.3599 mm;

10 MHz

COMMON

R-PDIP-T8

e0

9.3599 mm

53984 bit

MEMORY CIRCUIT

1

1

1

8

53984 words

53984

SYNCHRONOUS

70 Cel

0 Cel

53984X1

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

225

5

Not Qualified

4.5974 mm

.00005 Amp

OTP ROMs

10 mA

5.25 V

4.75 V

5

NO

CMOS

COMMERCIAL

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

30

7.62 mm

XC17S05XLPD8C by Xilinx

XC17S05XLPD8C

Xilinx

MEMORY CIRCUIT; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Terminal Finish: TIN LEAD;

10 MHz

COMMON

R-PDIP-T8

e0

9.3599 mm

54544 bit

MEMORY CIRCUIT

1

1

1

8

54544 words

54544

SYNCHRONOUS

70 Cel

0 Cel

54544X1

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

225

3.3

Not Qualified

4.5974 mm

.00005 Amp

OTP ROMs

5 mA

3.6 V

3 V

3.3

NO

CMOS

COMMERCIAL

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

30

7.62 mm

XC17S10PD8C by Xilinx

XC17S10PD8C

Xilinx

MEMORY CIRCUIT; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Peak Reflow Temperature (C): 225;

10 MHz

COMMON

R-PDIP-T8

e0

9.3599 mm

95008 bit

MEMORY CIRCUIT

1

1

1

8

95008 words

95008

SYNCHRONOUS

70 Cel

0 Cel

95008X1

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

225

5

Not Qualified

4.5974 mm

.00005 Amp

OTP ROMs

10 mA

5.25 V

4.75 V

5

NO

CMOS

COMMERCIAL

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

30

7.62 mm

XC17S10XLPD8C by Xilinx

XC17S10XLPD8C

Xilinx

The Xilinx XC17S10XLPD8C is a 95752-bit memory circuit IC with 3.3V supply voltage, operating at up to 10MHz clock frequency. It features synchronous operation, common I/O type, and 3-STATE output characteristics. Ideal for applications requiring low power consumption and high-speed memory access in commercial-grade environments.

10 MHz

COMMON

R-PDIP-T8

e0

9.3599 mm

95752 bit

MEMORY CIRCUIT

1

1

1

8

95752 words

95752

SYNCHRONOUS

70 Cel

0 Cel

95752X1

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

225

3.3

Not Qualified

4.5974 mm

.00005 Amp

OTP ROMs

5 mA

3.6 V

3 V

3.3

NO

CMOS

COMMERCIAL

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

30

7.62 mm

XC17S20PD8C by Xilinx

XC17S20PD8C

Xilinx

The Xilinx XC17S20PD8C is a 178144-bit memory circuit IC with synchronous operation and 3-STATE output. It operates at a max clock frequency of 10 MHz, suitable for applications requiring high-speed memory access. With a package style of IN-LINE and through-hole terminal form, it is commonly used in commercial-grade systems needing reliable memory storage.

10 MHz

COMMON

R-PDIP-T8

e0

9.3599 mm

178144 bit

MEMORY CIRCUIT

1

1

1

8

178144 words

178144

SYNCHRONOUS

70 Cel

0 Cel

178144X1

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

225

5

Not Qualified

4.5974 mm

.00005 Amp

OTP ROMs

10 mA

5.25 V

4.75 V

5

NO

CMOS

COMMERCIAL

Tin/Lead (Sn85Pb15)

THROUGH-HOLE

2.54 mm

DUAL

30

7.62 mm

XC17S20XLPD8C by Xilinx

XC17S20XLPD8C

Xilinx

MEMORY CIRCUIT; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Memory Width: 1;

10 MHz

COMMON

R-PDIP-T8

e0

9.3599 mm

179160 bit

MEMORY CIRCUIT

1

1

1

8

179160 words

179160

SYNCHRONOUS

70 Cel

0 Cel

179160X1

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

225

3.3

Not Qualified

4.5974 mm

.00005 Amp

OTP ROMs

5 mA

3.6 V

3 V

3.3

NO

CMOS

COMMERCIAL

Tin/Lead (Sn85Pb15)

THROUGH-HOLE

2.54 mm

DUAL

30

7.62 mm

XC17S30PD8C by Xilinx

XC17S30PD8C

Xilinx

MEMORY CIRCUIT; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Package Body Material: PLASTIC/EPOXY;

10 MHz

COMMON

R-PDIP-T8

e0

9.3599 mm

247968 bit

MEMORY CIRCUIT

1

1

1

8

247968 words

247968

SYNCHRONOUS

70 Cel

0 Cel

247968X1

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

225

5

Not Qualified

4.5974 mm

.00005 Amp

OTP ROMs

10 mA

5.25 V

4.75 V

5

NO

CMOS

COMMERCIAL

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

30

7.62 mm

XC17S30XLPD8C by Xilinx

XC17S30XLPD8C

Xilinx

MEMORY CIRCUIT; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Maximum Supply Current: 5 mA;

10 MHz

COMMON

R-PDIP-T8

e0

9.3599 mm

249168 bit

MEMORY CIRCUIT

1

1

1

8

249168 words

249168

SYNCHRONOUS

70 Cel

0 Cel

249168X1

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

225

3.3

Not Qualified

4.5974 mm

.00005 Amp

OTP ROMs

5 mA

3.6 V

3 V

3.3

NO

CMOS

COMMERCIAL

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

30

7.62 mm

XC17S40PD8C by Xilinx

XC17S40PD8C

Xilinx

MEMORY CIRCUIT; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Peak Reflow Temperature (C): 225;

10 MHz

COMMON

R-PDIP-T8

e0

9.3599 mm

329312 bit

MEMORY CIRCUIT

1

1

1

8

329312 words

329312

SYNCHRONOUS

70 Cel

0 Cel

329312X1

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

225

5

Not Qualified

4.5974 mm

.00005 Amp

OTP ROMs

10 mA

5.25 V

4.75 V

5

NO

CMOS

COMMERCIAL

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

30

7.62 mm

XC17S40XLPD8C by Xilinx

XC17S40XLPD8C

Xilinx

MEMORY CIRCUIT; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Maximum Seated Height: 4.5974 mm;

10 MHz

COMMON

R-PDIP-T8

e0

9.3599 mm

330696 bit

MEMORY CIRCUIT

1

1

1

8

330696 words

330696

SYNCHRONOUS

70 Cel

0 Cel

330696X1

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

225

3.3

Not Qualified

4.5974 mm

.00005 Amp

OTP ROMs

5 mA

3.6 V

3 V

3.3

NO

CMOS

COMMERCIAL

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

30

7.62 mm

XC17S40SO20C by Xilinx

XC17S40SO20C

Xilinx

MEMORY CIRCUIT; Temperature Grade: COMMERCIAL; No. of Terminals: 20; Package Code: SOP; Package Shape: RECTANGULAR; Nominal Supply Voltage / Vsup (V): 5;

10 MHz

COMMON

R-PDSO-G20

e0

12.8 mm

329312 bit

MEMORY CIRCUIT

1

3

1

20

329312 words

329312

SYNCHRONOUS

70 Cel

0 Cel

329312X1

3-STATE

PLASTIC/EPOXY

SOP

SOP20,.4

RECTANGULAR

SMALL OUTLINE

225

5

Not Qualified

2.65 mm

.00005 Amp

OTP ROMs

10 mA

5.25 V

4.75 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

1.27 mm

DUAL

30

7.5 mm

XC17S40XLSO20C by Xilinx

XC17S40XLSO20C

Xilinx

MEMORY CIRCUIT; Temperature Grade: COMMERCIAL; No. of Terminals: 20; Package Code: SOP; Package Shape: RECTANGULAR; Surface Mount: YES;

10 MHz

COMMON

R-PDSO-G20

e0

12.8 mm

330696 bit

MEMORY CIRCUIT

1

3

1

20

330696 words

330696

SYNCHRONOUS

70 Cel

0 Cel

330696X1

3-STATE

PLASTIC/EPOXY

SOP

SOP20,.4

RECTANGULAR

SMALL OUTLINE

225

3.3

Not Qualified

2.65 mm

.00005 Amp

OTP ROMs

5 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

1.27 mm

DUAL

30

7.5 mm

XC17S05VO8C by Xilinx

XC17S05VO8C

Xilinx

MEMORY CIRCUIT; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: TSOP2; Package Shape: RECTANGULAR; Terminal Pitch: 1.27 mm;

10 MHz

COMMON

R-PDSO-G8

e0

4.9 mm

53984 bit

MEMORY CIRCUIT

1

3

1

8

53984 words

53984

SYNCHRONOUS

70 Cel

0 Cel

53984X1

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP8,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

225

5

Not Qualified

1.2 mm

.00005 Amp

OTP ROMs

10 mA

5.25 V

4.75 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

1.27 mm

DUAL

30

3.9 mm

XC17S05XLVO8C by Xilinx

XC17S05XLVO8C

Xilinx

MEMORY CIRCUIT; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: TSOP2; Package Shape: RECTANGULAR; Organization: 54544X1;

10 MHz

COMMON

R-PDSO-G8

e0

4.9 mm

54544 bit

MEMORY CIRCUIT

1

3

1

8

54544 words

54544

SYNCHRONOUS

70 Cel

0 Cel

54544X1

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP8,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

225

3.3

Not Qualified

1.2 mm

.00005 Amp

OTP ROMs

5 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

1.27 mm

DUAL

30

3.9 mm

XC17S10VO8C by Xilinx

XC17S10VO8C

Xilinx

MEMORY CIRCUIT; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: TSOP2; Package Shape: RECTANGULAR; Maximum Operating Temperature: 70 Cel;

10 MHz

COMMON

R-PDSO-G8

e0

4.9 mm

95008 bit

MEMORY CIRCUIT

1

3

1

8

95008 words

95008

SYNCHRONOUS

70 Cel

0 Cel

95008X1

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP8,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

225

5

Not Qualified

1.2 mm

.00005 Amp

OTP ROMs

10 mA

5.25 V

4.75 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

1.27 mm

DUAL

30

3.9 mm

XC17S10XLVO8C by Xilinx

XC17S10XLVO8C

Xilinx

MEMORY CIRCUIT; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: TSOP2; Package Shape: RECTANGULAR; Maximum Operating Temperature: 70 Cel;

10 MHz

COMMON

R-PDSO-G8

e0

4.9 mm

95752 bit

MEMORY CIRCUIT

1

3

1

8

95752 words

95752

SYNCHRONOUS

70 Cel

0 Cel

95752X1

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP8,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

225

3.3

Not Qualified

1.2 mm

.00005 Amp

OTP ROMs

5 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

Tin/Lead (Sn85Pb15)

GULL WING

1.27 mm

DUAL

30

3.9 mm

XC17S20VO8C by Xilinx

XC17S20VO8C

Xilinx

MEMORY CIRCUIT; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: TSOP2; Package Shape: RECTANGULAR; Input/Output Type: COMMON;

10 MHz

COMMON

R-PDSO-G8

e0

4.9 mm

178144 bit

MEMORY CIRCUIT

1

3

1

8

178144 words

178144

SYNCHRONOUS

70 Cel

0 Cel

178144X1

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP8,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

225

5

Not Qualified

1.2 mm

.00005 Amp

OTP ROMs

10 mA

5.25 V

4.75 V

5

YES

CMOS

COMMERCIAL

Tin/Lead (Sn85Pb15)

GULL WING

1.27 mm

DUAL

30

3.9 mm

XC17S20XLVO8C by Xilinx

XC17S20XLVO8C

Xilinx

MEMORY CIRCUIT; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: TSOP2; Package Shape: RECTANGULAR; No. of Words: 179160 words;

10 MHz

COMMON

R-PDSO-G8

e0

4.9 mm

179160 bit

MEMORY CIRCUIT

1

3

1

8

179160 words

179160

SYNCHRONOUS

70 Cel

0 Cel

179160X1

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP8,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

225

3.3

Not Qualified

1.2 mm

.00005 Amp

OTP ROMs

5 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

Tin/Lead (Sn85Pb15)

GULL WING

1.27 mm

DUAL

30

3.9 mm

XC17S30VO8C by Xilinx

XC17S30VO8C

Xilinx

MEMORY CIRCUIT; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: TSOP2; Package Shape: RECTANGULAR; Maximum Clock Frequency (fCLK): 10 MHz;

10 MHz

COMMON

R-PDSO-G8

e0

4.9 mm

247968 bit

MEMORY CIRCUIT

1

3

1

8

247968 words

247968

SYNCHRONOUS

70 Cel

0 Cel

247968X1

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP8,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

225

5

Not Qualified

1.2 mm

.00005 Amp

OTP ROMs

10 mA

5.25 V

4.75 V

5

YES

CMOS

COMMERCIAL

Tin/Lead (Sn85Pb15)

GULL WING

1.27 mm

DUAL

30

3.9 mm

XC17S30XLVO8C by Xilinx

XC17S30XLVO8C

Xilinx

MEMORY CIRCUIT; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: TSOP2; Package Shape: RECTANGULAR; Technology: CMOS;

10 MHz

COMMON

R-PDSO-G8

e0

4.9 mm

249168 bit

MEMORY CIRCUIT

1

3

1

8

249168 words

249168

SYNCHRONOUS

70 Cel

0 Cel

249168X1

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP8,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

225

3.3

Not Qualified

1.2 mm

.00005 Amp

OTP ROMs

5 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

Tin/Lead (Sn85Pb15)

GULL WING

1.27 mm

DUAL

30

3.9 mm

SN74LS600ADW by Texas Instruments

SN74LS600ADW

Texas Instruments

SN74LS600ADW by Texas Instruments is a 16KX1 memory circuit IC with TTL technology. Operating at 5V, it has 16384-bit memory density and functions in asynchronous mode. This small outline package is ideal for applications requiring reliable memory storage in commercial temperature environments.

DRAM IS CONFIGURED AS 4 K X 1

R-PDSO-G20

12.8 mm

16384 bit

MEMORY CIRCUIT

1

1

20

16384 words

16K

ASYNCHRONOUS

70 Cel

0 Cel

16KX1

PLASTIC/EPOXY

SOP

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

Not Qualified

2.65 mm

5.25 V

4.75 V

5

YES

TTL

COMMERCIAL

GULL WING

1.27 mm

DUAL

NOT SPECIFIED

7.5 mm

XC17S150XLPD8C by Xilinx

XC17S150XLPD8C

Xilinx

Xilinx XC17S150XLPD8C is a 1040128-bit MEMORY CIRCUIT with 3.3V supply, 10MHz clock frequency, and 70°C operating temp. Ideal for applications requiring synchronous operation in commercial-grade environments.

10 MHz

COMMON

R-PDIP-T8

e0

9.3599 mm

1040128 bit

MEMORY CIRCUIT

1

1

1

8

1040128 words

1040128

SYNCHRONOUS

70 Cel

0 Cel

1040128X1

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

225

3.3

Not Qualified

4.5974 mm

.00005 Amp

OTP ROMs

5 mA

3.6 V

3 V

3.3

NO

CMOS

COMMERCIAL

TIN LEAD

THROUGH-HOLE

2.54 mm

DUAL

30

7.62 mm

XC17S150XLSO20C by Xilinx

XC17S150XLSO20C

Xilinx

MEMORY CIRCUIT; Temperature Grade: COMMERCIAL; No. of Terminals: 20; Package Code: SOP; Package Shape: RECTANGULAR; Terminal Finish: TIN LEAD;

10 MHz

COMMON

R-PDSO-G20

e0

12.8 mm

1040128 bit

MEMORY CIRCUIT

1

3

1

20

1040128 words

1040128

SYNCHRONOUS

70 Cel

0 Cel

1040128X1

3-STATE

PLASTIC/EPOXY

SOP

SOP20,.4

RECTANGULAR

SMALL OUTLINE

225

3.3

Not Qualified

2.65 mm

.00005 Amp

OTP ROMs

5 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

1.27 mm

DUAL

30

7.5 mm

MT9VDDT3272AG-335G4 by Micron Technology

MT9VDDT3272AG-335G4

Micron Technology

Other Memory ICs; Temperature Grade: COMMERCIAL; No. of Terminals: 184; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

.7 ns

167 MHz

COMMON

R-PDMA-N184

2415919104 bit

72

184

33554432 words

32M

70 Cel

0 Cel

32MX72

3-STATE

PLASTIC/EPOXY

DIMM

DIMM184

RECTANGULAR

MICROELECTRONIC ASSEMBLY

2.5

Not Qualified

8192

.036 Amp

Other Memory ICs

3690 mA

2.5

NO

CMOS

COMMERCIAL

NO LEAD

1.27 mm

DUAL

MT9VDDT3272AG-265G4 by Micron Technology

MT9VDDT3272AG-265G4

Micron Technology

Other Memory ICs; Temperature Grade: COMMERCIAL; No. of Terminals: 184; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

.75 ns

133 MHz

COMMON

R-PDMA-N184

2415919104 bit

72

184

33554432 words

32M

70 Cel

0 Cel

32MX72

3-STATE

PLASTIC/EPOXY

DIMM

DIMM184

RECTANGULAR

MICROELECTRONIC ASSEMBLY

2.5

Not Qualified

8192

.036 Amp

Other Memory ICs

3285 mA

2.5

NO

CMOS

COMMERCIAL

NO LEAD

1.27 mm

DUAL

MT9VDDT6472AG-335F1 by Micron Technology

MT9VDDT6472AG-335F1

Micron Technology

Other Memory ICs; Temperature Grade: COMMERCIAL; No. of Terminals: 184; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

.7 ns

167 MHz

COMMON

R-PDMA-N184

4831838208 bit

72

184

67108864 words

64M

70 Cel

0 Cel

64MX72

3-STATE

PLASTIC/EPOXY

DIMM

DIMM184

RECTANGULAR

MICROELECTRONIC ASSEMBLY

2.5

Not Qualified

8192

.045 Amp

Other Memory ICs

3645 mA

2.5

NO

CMOS

COMMERCIAL

NO LEAD

1.27 mm

DUAL

MR0A08BMA35 by Everspin Technologies

MR0A08BMA35

Everspin Technologies

Everspin Technologies' MR0A08BMA35 is a 128Kx8 memory IC with 1048576-bit density. Operating at 3.3V, it features a max access time of 35ns and low profile grid array package suitable for commercial applications.

35 ns

S-PBGA-B48

8 mm

1048576 bit

MEMORY CIRCUIT

8

3

1

48

131072 words

128K

ASYNCHRONOUS

70 Cel

0 Cel

128KX8

PLASTIC/EPOXY

LFBGA

BGA48,6X8,30

SQUARE

GRID ARRAY, LOW PROFILE, FINE PITCH

3.3

Not Qualified

1.35 mm

.007 Amp

SRAMs

65 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

BALL

.75 mm

BOTTOM

8 mm