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8 Other Function Memory ICs 71

Other Function Memory ICs
Part# Info Specs
Part RoHS Manufacturer Description Access Mode Maximum Access Time Additional Features Boot Block Maximum Clock Frequency (fCLK) Command User Interface Common Flash Interface Data Polling Minimum Data Retention Time Endurance Input/Output Type I2C Control Byte Interleaved Burst Length JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Mixed Memory Type Moisture Sensitivity Level (MSL) No. of Functions No. of Ports No. of Sectors/Size No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Page Size (words) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Programming Voltage (V) Qualification Refresh Cycles Reverse Pinout Screening Level Maximum Seated Height Sector Size (Words) Self Refresh Sequential Burst Length Serial Bus Type Maximum Standby Current Minimum Standby Voltage Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Toggle Bit Total Dose (V) Type Width Write Protection
XC17S10XLPDG8C by Xilinx

XC17S10XLPDG8C

Xilinx

MEMORY CIRCUIT; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Length: 9.3599 mm;

10 MHz

COMMON

R-PDIP-T8

e3

9.3599 mm

95752 bit

MEMORY CIRCUIT

1

1

1

8

95752 words

95752

SYNCHRONOUS

70 Cel

0 Cel

95752X1

3-STATE

PLASTIC/EPOXY

DIP

TSOP8,.25

RECTANGULAR

IN-LINE

250

3.3

Not Qualified

4.5974 mm

.00005 Amp

OTP ROMs

5 mA

3.6 V

3 V

3.3

NO

CMOS

COMMERCIAL

Matte Tin (Sn)

THROUGH-HOLE

2.54 mm

DUAL

30

7.62 mm

XC17S30XLPDG8C by Xilinx

XC17S30XLPDG8C

Xilinx

MEMORY CIRCUIT; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Minimum Operating Temperature: 0 Cel;

10 MHz

COMMON

R-PDIP-T8

e3

9.3599 mm

249168 bit

MEMORY CIRCUIT

1

1

1

8

249168 words

249168

SYNCHRONOUS

70 Cel

0 Cel

249168X1

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

250

3.3

Not Qualified

4.5974 mm

.00005 Amp

OTP ROMs

5 mA

3.6 V

3 V

3.3

NO

CMOS

COMMERCIAL

Matte Tin (Sn)

THROUGH-HOLE

2.54 mm

DUAL

30

7.62 mm

XC17S40XLPDG8C by Xilinx

XC17S40XLPDG8C

Xilinx

MEMORY CIRCUIT; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Technology: CMOS;

10 MHz

COMMON

R-PDIP-T8

e3

9.3599 mm

330696 bit

MEMORY CIRCUIT

1

1

1

8

330696 words

330696

SYNCHRONOUS

70 Cel

0 Cel

330696X1

3-STATE

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

250

3.3

Not Qualified

4.5974 mm

.00005 Amp

OTP ROMs

5 mA

3.6 V

3 V

3.3

NO

CMOS

COMMERCIAL

Matte Tin (Sn)

THROUGH-HOLE

2.54 mm

DUAL

30

7.62 mm

ST25TA02KD-C6C5 by STMicroelectronics

ST25TA02KD-C6C5

STMicroelectronics

ST25TA02KD-C6C5 from STMicroelectronics is a compact, dual-terminal memory IC with an industrial temperature range of -40 °C to 85 °C. It features asynchronous operation, 256x8 organization, and a very thin profile (0.6mm height). Ideal for space-constrained applications in various electronic devices.

R-PDSO-N8

3 mm

2048 bit

MEMORY CIRCUIT

8

1

8

256 words

256

ASYNCHRONOUS

85 Cel

-40 Cel

256X8

PLASTIC/EPOXY

HVSON

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

NOT SPECIFIED

.6 mm

YES

CMOS

INDUSTRIAL

NO LEAD

.5 mm

DUAL

NOT SPECIFIED

2 mm

ST25TA02KP-C6C5 by STMicroelectronics

ST25TA02KP-C6C5

STMicroelectronics

ST25TA02KP-C6C5 from STMicroelectronics is a compact, dual-terminal memory IC with a 256x8 organization and operates asynchronously. It features an industrial temperature range of -40 °C to 85 °C and comes in a very thin profile package. Ideal for space-constrained applications requiring reliable data storage.

R-PDSO-N8

3 mm

2048 bit

MEMORY CIRCUIT

8

1

8

256 words

256

ASYNCHRONOUS

85 Cel

-40 Cel

256X8

PLASTIC/EPOXY

HVSON

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

NOT SPECIFIED

.6 mm

YES

CMOS

INDUSTRIAL

NO LEAD

.5 mm

DUAL

NOT SPECIFIED

2 mm

47C04-E/SN by Microchip Technology

47C04-E/SN

Microchip Technology

47C04-E/SN by Microchip Technology is a small outline memory IC with 512x8 organization, EEPROM+SRAM mixed memory type, and synchronous operating mode. Ideal for automotive applications, it has a supply voltage range of 4.5V to 5.5V and operates in temperatures from -40°C to 125°C.

400 ns

R-PDSO-G8

e3

4.9 mm

4096 bit

MEMORY CIRCUIT

8

EEPROM+SRAM

3

1

1

8

512 words

512

SYNCHRONOUS

125 Cel

-40 Cel

512X8

PLASTIC/EPOXY

SOP

SOP8,.23

RECTANGULAR

SMALL OUTLINE

260

1.75 mm

5.5 V

4.5 V

5

YES

CMOS

AUTOMOTIVE

MATTE TIN

GULL WING

1.27 mm

DUAL

40

3.9 mm

47C04-E/ST by Microchip Technology

47C04-E/ST

Microchip Technology

47C04-E/ST by Microchip Technology is a synchronous EEPROM+SRAM memory IC with 512x8 organization. Operating at 5V, it has a memory density of 4096 bit and max access time of 400ns. Ideal for automotive applications due to its small outline, thin profile package style and wide temperature range from -40°C to 125°C.

400 ns

R-PDSO-G8

e3

4.4 mm

4096 bit

MEMORY CIRCUIT

8

EEPROM+SRAM

1

1

1

8

512 words

512

SYNCHRONOUS

125 Cel

-40 Cel

512X8

PLASTIC/EPOXY

TSSOP

TSSOP8,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

260

1.2 mm

5.5 V

4.5 V

5

YES

CMOS

AUTOMOTIVE

MATTE TIN

GULL WING

.65 mm

DUAL

40

3 mm

47C04-I/ST by Microchip Technology

47C04-I/ST

Microchip Technology

47C04-I/ST by Microchip Technology is a CMOS memory IC with EEPROM+SRAM, 512X8 organization, and 4096-bit memory density. It operates synchronously at temperatures ranging from -40 to 85°C. This small outline package with 0.65mm terminal pitch is ideal for industrial applications requiring fast access times.

400 ns

R-PDSO-G8

e3

4.4 mm

4096 bit

MEMORY CIRCUIT

8

EEPROM+SRAM

1

1

1

8

512 words

512

SYNCHRONOUS

85 Cel

-40 Cel

512X8

PLASTIC/EPOXY

TSSOP

TSSOP8,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

260

1.2 mm

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.65 mm

DUAL

40

3 mm

47C04T-E/SN by Microchip Technology

47C04T-E/SN

Microchip Technology

47C04T-E/SN by Microchip Technology is a synchronous EEPROM+SRAM memory IC with 512x8 organization. Operating at 5V, it has a max access time of 400ns and is suitable for automotive applications due to its temperature grade.

400 ns

R-PDSO-G8

e3

4.9 mm

4096 bit

MEMORY CIRCUIT

8

EEPROM+SRAM

3

1

1

8

512 words

512

SYNCHRONOUS

125 Cel

-40 Cel

512X8

PLASTIC/EPOXY

SOP

SOP8,.23

RECTANGULAR

SMALL OUTLINE

260

1.75 mm

5.5 V

4.5 V

5

YES

CMOS

AUTOMOTIVE

MATTE TIN

GULL WING

1.27 mm

DUAL

40

3.9 mm

47C04T-E/ST by Microchip Technology

47C04T-E/ST

Microchip Technology

47C04T-E/ST by Microchip Technology is a small outline, thin profile EEPROM+SRAM memory IC with 512x8 organization. Operating at 5V, it has a max access time of 400ns and is suitable for automotive applications due to its temperature grade of -40 to 125°C.

400 ns

R-PDSO-G8

e3

4.4 mm

4096 bit

MEMORY CIRCUIT

8

EEPROM+SRAM

1

1

1

8

512 words

512

SYNCHRONOUS

125 Cel

-40 Cel

512X8

PLASTIC/EPOXY

TSSOP

TSSOP8,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

260

1.2 mm

5.5 V

4.5 V

5

YES

CMOS

AUTOMOTIVE

MATTE TIN

GULL WING

.65 mm

DUAL

40

3 mm

47C16T-I/SN by Microchip Technology

47C16T-I/SN

Microchip Technology

47C16T-I/SN by Microchip Technology is a synchronous EEPROM+SRAM memory IC with an organization of 2KX8 and a memory density of 16384 bit. It operates at a nominal voltage of 5V and has a max access time of 400 ns. This memory circuit is commonly used in industrial applications requiring reliable data storage.

400 ns

R-PDSO-G8

e3

4.9 mm

16384 bit

MEMORY CIRCUIT

8

EEPROM+SRAM

3

1

1

8

2048 words

2K

SYNCHRONOUS

85 Cel

-40 Cel

2KX8

PLASTIC/EPOXY

SOP

SOP8,.23

RECTANGULAR

SMALL OUTLINE

260

1.75 mm

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

1.27 mm

DUAL

40

3.9 mm

47L04T-I/ST by Microchip Technology

47L04T-I/ST

Microchip Technology

47L04T-I/ST by Microchip Technology is a small outline, thin profile memory IC with EEPROM+SRAM mixed memory type. Operating in synchronous mode, it offers 512x8 organization and 4096-bit memory density. Ideal for industrial applications requiring fast access times at temperatures ranging from -40 to 85°C.

400 ns

R-PDSO-G8

e3

4.4 mm

4096 bit

MEMORY CIRCUIT

8

EEPROM+SRAM

1

1

1

8

512 words

512

SYNCHRONOUS

85 Cel

-40 Cel

512X8

PLASTIC/EPOXY

TSSOP

TSSOP8,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

260

1.2 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.65 mm

DUAL

40

3 mm

47L16-E/P by Microchip Technology

47L16-E/P

Microchip Technology

47L16-E/P by Microchip Technology is a 2KX8 EEPROM+SRAM memory IC with 16384 bit density. Operating in synchronous mode, it has a max access time of 400 ns and operates b/w -40 to 125 °C. Ideal for automotive applications, this rectangular IN-LINE package offers reliable performance in various systems.

400 ns

R-PDIP-T8

e3

9.271 mm

16384 bit

MEMORY CIRCUIT

8

EEPROM+SRAM

1

1

8

2048 words

2K

SYNCHRONOUS

125 Cel

-40 Cel

2KX8

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

5.334 mm

3.6 V

2.7 V

NO

CMOS

AUTOMOTIVE

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

7.62 mm

47L16T-E/SN by Microchip Technology

47L16T-E/SN

Microchip Technology

47L16T-E/SN by Microchip Technology is a synchronous EEPROM+SRAM memory IC with 2KX8 organization. Operating at -40 to 125 °C, it has a memory density of 16384 bit and max access time of 400 ns. Ideal for automotive applications due to its small outline package style and CMOS technology.

400 ns

R-PDSO-G8

e3

4.9 mm

16384 bit

MEMORY CIRCUIT

8

EEPROM+SRAM

3

1

1

8

2048 words

2K

SYNCHRONOUS

125 Cel

-40 Cel

2KX8

PLASTIC/EPOXY

SOP

SOP8,.23

RECTANGULAR

SMALL OUTLINE

260

1.75 mm

3.6 V

2.7 V

YES

CMOS

AUTOMOTIVE

MATTE TIN

GULL WING

1.27 mm

DUAL

40

3.9 mm

47L16T-E/ST by Microchip Technology

47L16T-E/ST

Microchip Technology

47L16T-E/ST by Microchip Technology is a CMOS memory IC with EEPROM+SRAM, operating in synchronous mode. It has an organization of 2KX8 and a memory density of 16384 bit. Ideal for automotive applications, it offers a wide temperature range from -40 to 125 °C and operates at supply voltages b/w 2.7V to 3.6V.

400 ns

R-PDSO-G8

e3

4.4 mm

16384 bit

MEMORY CIRCUIT

8

EEPROM+SRAM

1

1

1

8

2048 words

2K

SYNCHRONOUS

125 Cel

-40 Cel

2KX8

PLASTIC/EPOXY

TSSOP

TSSOP8,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

260

1.2 mm

3.6 V

2.7 V

YES

CMOS

AUTOMOTIVE

MATTE TIN

GULL WING

.65 mm

DUAL

40

3 mm

47L16T-I/ST by Microchip Technology

47L16T-I/ST

Microchip Technology

47L16T-I/ST by Microchip Technology is a small outline memory IC with 2Kx8 organization, EEPROM+SRAM mixed memory type, and synchronous operating mode. It is ideal for industrial applications requiring a memory density of 16384 bit, fast access time of 400 ns, and operating temperature range from -40 to 85°C.

400 ns

R-PDSO-G8

e3

4.4 mm

16384 bit

MEMORY CIRCUIT

8

EEPROM+SRAM

1

1

1

8

2048 words

2K

SYNCHRONOUS

85 Cel

-40 Cel

2KX8

PLASTIC/EPOXY

TSSOP

TSSOP8,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

260

1.2 mm

3.6 V

2.7 V

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.65 mm

DUAL

40

3 mm

M24SR64-YDW8T/2 by STMicroelectronics

M24SR64-YDW8T/2

STMicroelectronics

M24SR64-YDW8T/2 by STMicroelectronics is a 64KX1 memory circuit with 65536 bit memory density. It operates in synchronous mode, has a supply voltage range of 2.7V to 5.5V, and industrial temperature grade. This small outline IC with dual terminals is ideal for applications requiring secure data storage and retrieval in compact devices.

R-PDSO-G8

4.3 mm

65536 bit

MEMORY CIRCUIT

1

1

8

65536 words

64K

SYNCHRONOUS

105 Cel

-40 Cel

64KX1

PLASTIC/EPOXY

TSSOP

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

NOT SPECIFIED

1.2 mm

5.5 V

2.7 V

YES

CMOS

INDUSTRIAL

GULL WING

.65 mm

DUAL

NOT SPECIFIED

2.9 mm

M24SR64-YMN8T/2 by STMicroelectronics

M24SR64-YMN8T/2

STMicroelectronics

M24SR64-YMN8T/2 by STMicroelectronics is a 64Kx1 memory IC with CMOS technology. It operates in synchronous mode, has 65536-bit memory density, and supports a supply voltage range of 2.7V to 5.5V. This small outline package is ideal for industrial applications requiring reliable data storage and retrieval capabilities.

R-PDSO-G8

4.9 mm

65536 bit

MEMORY CIRCUIT

1

1

8

65536 words

64K

SYNCHRONOUS

105 Cel

-40 Cel

64KX1

PLASTIC/EPOXY

SOP

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

1.75 mm

5.5 V

2.7 V

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

NOT SPECIFIED

3.9 mm

MB85AS4MTPF-G-BCERE1 by Fujitsu

MB85AS4MTPF-G-BCERE1

Fujitsu

Fujitsu's MB85AS4MTPF-G-BCERE1 is a 512KX8 memory IC with CMOS technology. Operating at 3.3V, it has a memory density of 4194304 bit and supports synchronous operation. Ideal for industrial applications, this small outline package measures 5.85mm x 5.3mm with a max temperature of 85°C.

R-PDSO-G8

5.85 mm

4194304 bit

MEMORY CIRCUIT

8

1

8

524288 words

512K

SYNCHRONOUS

85 Cel

-40 Cel

512KX8

PLASTIC/EPOXY

SOP

SOP8,.3

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

1.73 mm

3.6 V

1.65 V

3.3

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

NOT SPECIFIED

5.3 mm

MR45V200BRAZAARL by Lapis Semiconductor

MR45V200BRAZAARL

Lapis Semiconductor

MR45V200BRAZAARL by Lapis Semiconductor is a 256KX8 memory IC with CMOS technology. Operating at 3.3V, it has an industrial temperature grade and offers 2097152 bits of memory density. Ideal for applications requiring synchronous operation in industrial settings.

R-PDIP-T8

9.2 mm

2097152 bit

MEMORY CIRCUIT

8

1

8

262144 words

256K

SYNCHRONOUS

85 Cel

-40 Cel

256KX8

PLASTIC/EPOXY

DIP

RECTANGULAR

IN-LINE

3.6 V

2.7 V

3.3

NO

CMOS

INDUSTRIAL

THROUGH-HOLE

2.54 mm

DUAL

7.62 mm

MR44V100AMAZAATL by Lapis Semiconductor

MR44V100AMAZAATL

Lapis Semiconductor

MR44V100AMAZAATL by Lapis Semiconductor is a 128KX8 MEMORY CIRCUIT with 1048576 bit Memory Density. Operating at 3.3V, it has a temperature range of -40 to 85 °C and is ideal for industrial applications requiring small outline, low profile Package Style.

R-PDSO-G8

4.9 mm

1048576 bit

MEMORY CIRCUIT

8

1

8

131072 words

128K

SYNCHRONOUS

85 Cel

-40 Cel

128KX8

PLASTIC/EPOXY

LSOP

RECTANGULAR

SMALL OUTLINE, LOW PROFILE

1.65 mm

3.6 V

1.8 V

3.3

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

3.9 mm

MR45V032AMAZBATL by Lapis Semiconductor

MR45V032AMAZBATL

Lapis Semiconductor

MR45V032AMAZBATL by Lapis Semiconductor is a small outline, low profile memory IC with a capacity of 4096 words and a memory density of 32768 bits. It operates synchronously at a nominal voltage of 3.3V and can withstand temperatures ranging from -40 to 85°C. This memory circuit is commonly used in industrial applications requiring compact and reliable storage solutions.

R-PDSO-G8

4.9 mm

32768 bit

MEMORY CIRCUIT

8

1

8

4096 words

4K

SYNCHRONOUS

85 Cel

-40 Cel

4KX8

PLASTIC/EPOXY

LSOP

RECTANGULAR

SMALL OUTLINE, LOW PROFILE

1.65 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

3.9 mm

47L64-I/SN by Microchip Technology

47L64-I/SN

Microchip Technology

47L64-I/SN by Microchip Technology is a small outline memory IC with 8KX8 organization, EEPROM+SRAM mixed memory type, and synchronous operating mode. It is suitable for industrial applications requiring a memory density of 65536 bit, fast access time of 550 ns, and a supply voltage range from 2.7V to 3.6V.

550 ns

R-PDSO-G8

4.9 mm

65536 bit

MEMORY CIRCUIT

8

EEPROM+SRAM

1

1

8

8192 words

8K

SYNCHRONOUS

85 Cel

-40 Cel

8KX8

PLASTIC/EPOXY

SOP

SOP8,.23

RECTANGULAR

SMALL OUTLINE

1.75 mm

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

3.9 mm