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Winbond Electronics DRAM 33

DRAM
Part# Info Specs
Part RoHS Manufacturer Description Access Mode Maximum Access Time Additional Features Alternate Memory Width Maximum Clock Frequency (fCLK) Input/Output Type Interleaved Burst Length JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Mixed Memory Type Moisture Sensitivity Level (MSL) Nominal Negative Supply Voltage No. of Functions No. of Ports No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Qualification Refresh Cycles Reverse Pinout Screening Level Maximum Seated Height Self Refresh Sequential Burst Length Maximum Standby Current Minimum Standby Voltage Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Width
W9825G2JB-6I by Winbond Electronics

W9825G2JB-6I

Winbond Electronics

Winbond Electronics' W9825G2JB-6I is an 8MX32 Synchronous DRAM with 166 MHz clock frequency, suitable for industrial applications. Features include 3.3V supply voltage, 90 terminals in a thin profile grid array package, and common I/O type with self-refresh capability.

FOUR BANK PAGE BURST

5 ns

AUTO/SELF REFRESH

166 MHz

COMMON

1,2,4,8

R-PBGA-B90

13 mm

268435456 bit

SYNCHRONOUS DRAM

32

1

1

90

8388608 words

8M

SYNCHRONOUS

85 Cel

-40 Cel

8MX32

PLASTIC/EPOXY

TFBGA

BGA90,9X15,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

NOT SPECIFIED

3/3.3

Not Qualified

4096

1.2 mm

YES

1,2,4,8,FP

.004 Amp

DRAMs

150 mA

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

NOT SPECIFIED

8 mm

W9864G6JT-6I by Winbond Electronics

W9864G6JT-6I

Winbond Electronics

W9864G6JT-6I by Winbond Electronics is a 4MX16 Synchronous DRAM with 3.3V supply, operating at 166MHz clock frequency. It features a thin profile grid array package and supports common I/O type. Ideal for industrial applications requiring fast access times and high memory density.

FOUR BANK PAGE BURST

5 ns

AUTO/SELF REFRESH

166 MHz

COMMON

1,2,4,8

S-PBGA-B54

8 mm

67108864 bit

SYNCHRONOUS DRAM

16

1

1

54

4194304 words

4M

SYNCHRONOUS

85 Cel

-40 Cel

4MX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA54,9X9,32

SQUARE

GRID ARRAY, THIN PROFILE, FINE PITCH

NOT SPECIFIED

3.3

Not Qualified

4096

1.2 mm

YES

1,2,4,8,FP

.002 Amp

DRAMs

75 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

NOT SPECIFIED

8 mm

W9725G6KB25I by Winbond Electronics

W9725G6KB25I

Winbond Electronics

Winbond Electronics' W9725G6KB25I is a DDR2 DRAM with 16Mx16 organization, operating at 400MHz. It features a 1.8V supply voltage, 84 terminals in a thin profile grid array package, and supports synchronous operation. Ideal for industrial applications requiring high-speed memory with common I/O type and self-refresh capability.

FOUR BANK PAGE BURST

.4 ns

AUTO/SELF REFRESH

400 MHz

COMMON

4,8

R-PBGA-B84

12.5 mm

268435456 bit

DDR2 DRAM

16

1

1

84

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA84,9X15,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

NOT SPECIFIED

1.8

Not Qualified

8192

1.2 mm

YES

4,8

.006 Amp

DRAMs

135 mA

1.9 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

NOT SPECIFIED

8 mm

W9825G6JB-6I by Winbond Electronics

W9825G6JB-6I

Winbond Electronics

W9825G6JB-6I by Winbond Electronics is a 16MX16 Synchronous DRAM with 16777216 words and 268435456 bit memory density. It operates at a max clock frequency of 166 MHz, suitable for industrial applications requiring fast data processing and common I/O type. With a thin profile package style and self-refresh capability, it offers reliable performance in various electronic devices.

FOUR BANK PAGE BURST

5 ns

AUTO/SELF REFRESH

166 MHz

COMMON

1,2,4,8

S-PBGA-B54

8 mm

268435456 bit

SYNCHRONOUS DRAM

16

1

1

54

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA54,9X9,32

SQUARE

GRID ARRAY, THIN PROFILE, FINE PITCH

NOT SPECIFIED

3.3

Not Qualified

8192

1.2 mm

YES

1,2,4,8,FP

.002 Amp

DRAMs

80 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

NOT SPECIFIED

8 mm

W9825G6JB-6 by Winbond Electronics

W9825G6JB-6

Winbond Electronics

W9825G6JB-6 by Winbond Electronics is a 16MX16 Synchronous DRAM with 16777216 words and 268435456 bit memory density. It operates at a max clock frequency of 166 MHz, suitable for applications requiring high-speed data processing such as networking equipment and industrial automation systems.

FOUR BANK PAGE BURST

5 ns

AUTO/SELF REFRESH

166 MHz

COMMON

1,2,4,8

S-PBGA-B54

8 mm

268435456 bit

SYNCHRONOUS DRAM

16

1

1

54

16777216 words

16M

SYNCHRONOUS

70 Cel

0 Cel

16MX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA54,9X9,32

SQUARE

GRID ARRAY, THIN PROFILE, FINE PITCH

NOT SPECIFIED

3.3

Not Qualified

8192

1.2 mm

YES

1,2,4,8,FP

.002 Amp

DRAMs

80 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

BALL

.8 mm

BOTTOM

NOT SPECIFIED

8 mm

W9751G6KB25I by Winbond Electronics

W9751G6KB25I

Winbond Electronics

W9751G6KB25I by Winbond Electronics is a DDR2 DRAM with 32MX16 organization, operating at up to 400 MHz. It features a 32M word code, operates at 1.8V, and has a max clock frequency of 400 MHz. Ideal for industrial applications requiring high-speed memory performance in a compact form factor.

FOUR BANK PAGE BURST

.4 ns

AUTO/SELF REFRESH

400 MHz

COMMON

4,8

R-PBGA-B84

e1

12.5 mm

536870912 bit

DDR2 DRAM

16

1

1

84

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA84,9X15,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.8

Not Qualified

8192

1.2 mm

YES

4,8

.008 Amp

DRAMs

200 mA

1.9 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

8 mm

W971GG6KB25I by Winbond Electronics

W971GG6KB25I

Winbond Electronics

Winbond Electronics' W971GG6KB25I is a 64MX16 DDR2 DRAM with 400 MHz clock frequency, 1.8V supply, and 84 terminals in a grid array package. It operates synchronously with self-refresh capability and offers multi-bank page burst access mode. Ideal for high-speed memory applications requiring low power consumption and compact design.

MULTI BANK PAGE BURST

.4 ns

AUTO/SELF REFRESH

400 MHz

COMMON

4,8

R-PBGA-B84

12.5 mm

1073741824 bit

DDR2 DRAM

16

1

1

84

67108864 words

64M

SYNCHRONOUS

64MX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA84,9X15,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

NOT SPECIFIED

1.8

Not Qualified

8192

1.2 mm

YES

4,8

.008 Amp

DRAMs

185 mA

1.9 V

1.7 V

1.8

YES

CMOS

BALL

.8 mm

BOTTOM

NOT SPECIFIED

8 mm

W9864G6KH-6I by Winbond Electronics

W9864G6KH-6I

Winbond Electronics

The Winbond Electronics W9864G6KH-6I is a 4MX16 Synchronous DRAM with 67108864-bit memory density. Operating at 3.3V, it features a max access time of 5ns and supports four bank page burst access mode. Ideal for commercial applications requiring high-speed memory solutions in compact form factors.

FOUR BANK PAGE BURST

5 ns

AUTO/SELF REFRESH

R-PDSO-G54

22.22 mm

67108864 bit

SYNCHRONOUS DRAM

16

1

1

54

4194304 words

4M

SYNCHRONOUS

70 Cel

0 Cel

4MX16

PLASTIC/EPOXY

TSOP2

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

NOT SPECIFIED

1.2 mm

YES

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

GULL WING

.8 mm

DUAL

NOT SPECIFIED

10.16 mm

W9816G6JH-6I by Winbond Electronics

W9816G6JH-6I

Winbond Electronics

W9816G6JH-6I by Winbond Electronics is a 1MX16 Synchronous DRAM with 16-bit memory width. Operating at 3.3V, it features dual bank page burst access mode and self-refresh capability. Ideal for industrial applications requiring fast data processing in a compact package.

DUAL BANK PAGE BURST

5 ns

AUTO/SELF REFRESH

R-PDSO-G50

20.95 mm

16777216 bit

SYNCHRONOUS DRAM

16

1

1

50

1048576 words

1M

SYNCHRONOUS

85 Cel

-40 Cel

1MX16

PLASTIC/EPOXY

TSOP2

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

NOT SPECIFIED

1.2 mm

YES

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

GULL WING

.8 mm

DUAL

NOT SPECIFIED

10.16 mm

W632GG6NB-12 by Winbond Electronics

W632GG6NB-12

Winbond Electronics

The Winbond Electronics W632GG6NB-12 is a DDR3 DRAM with 128MX16 organization, operating at 1.5V. It features a grid array package style with very thin profile and fine pitch, suitable for synchronous multi-bank page burst applications. With a memory density of 2147483648 bits and 16-bit memory width, it offers high performance in compact dimensions.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B96

13 mm

2147483648 bit

DDR3 DRAM

16

1

1

96

134217728 words

128M

SYNCHRONOUS

95 Cel

0 Cel

128MX16

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

NOT SPECIFIED

1 mm

1.575 V

1.425 V

1.5

YES

CMOS

OTHER

BALL

.8 mm

BOTTOM

NOT SPECIFIED

7.5 mm

W632GG6NB12I by Winbond Electronics

W632GG6NB12I

Winbond Electronics

The Winbond Electronics W632GG6NB12I is a DDR3 DRAM with 128MX16 organization, operating at 1.5V. It features a grid array package style with very thin profile and fine pitch, suitable for industrial applications requiring high memory density and multi-bank page burst access mode.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B96

13 mm

2147483648 bit

DDR3 DRAM

16

1

1

96

134217728 words

128M

SYNCHRONOUS

95 Cel

-40 Cel

128MX16

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

NOT SPECIFIED

1 mm

1.575 V

1.425 V

1.5

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

NOT SPECIFIED

7.5 mm

W632GG6NB12J by Winbond Electronics

W632GG6NB12J

Winbond Electronics

Winbond Electronics' W632GG6NB12J is a DDR3 DRAM with 128MX16 organization, operating at 1.5V. It features a grid array package style, suitable for industrial applications requiring high memory density and multi-bank page burst access mode. With a temperature range of -40 to 105°C, it offers synchronous operation in a compact form factor.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B96

13 mm

2147483648 bit

DDR3 DRAM

16

1

1

96

134217728 words

128M

SYNCHRONOUS

105 Cel

-40 Cel

128MX16

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

NOT SPECIFIED

1 mm

1.575 V

1.425 V

1.5

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

NOT SPECIFIED

7.5 mm

W632GU6NB11I by Winbond Electronics

W632GU6NB11I

Winbond Electronics

Winbond Electronics' W632GU6NB11I is a DDR3L DRAM with 128MX16 organization, operating at 1.35V. It features a grid array package style, suitable for industrial applications due to its wide temperature range of -40 to 95°C and multi-bank page burst access mode.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B96

13 mm

2147483648 bit

DDR3L DRAM

16

1

1

96

134217728 words

128M

SYNCHRONOUS

95 Cel

-40 Cel

128MX16

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

NOT SPECIFIED

1 mm

1.45 V

1.283 V

1.35

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

NOT SPECIFIED

7.5 mm

W632GU6NB12I by Winbond Electronics

W632GU6NB12I

Winbond Electronics

The Winbond Electronics W632GU6NB12I is a DDR3L DRAM with 128MX16 organization, operating at 1.35V. It features a grid array package style with very thin profile and fine pitch, suitable for industrial applications requiring high memory density and multi-bank page burst access mode.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B96

13 mm

2147483648 bit

DDR3L DRAM

16

1

1

96

134217728 words

128M

SYNCHRONOUS

95 Cel

-40 Cel

128MX16

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

NOT SPECIFIED

1 mm

1.45 V

1.283 V

1.35

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

NOT SPECIFIED

7.5 mm

W972GG6KB25I by Winbond Electronics

W972GG6KB25I

Winbond Electronics

Winbond Electronics' W972GG6KB25I is a 128MX16 DDR2 DRAM with 1.8V supply, operating at 400MHz clock frequency. It features synchronous operation, self-refresh capability, and multi-bank page burst access mode. Ideal for applications requiring high-speed memory performance in compact form factors like mobile devices and embedded systems.

MULTI BANK PAGE BURST

.4 ns

AUTO/SELF REFRESH

400 MHz

COMMON

4,8

R-PBGA-B84

12.5 mm

2147483648 bit

DDR2 DRAM

16

1

1

84

134217728 words

128M

SYNCHRONOUS

95 Cel

-40 Cel

128MX16

PLASTIC/EPOXY

TFBGA

BGA84,9X15,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

NOT SPECIFIED

8192

1.2 mm

YES

4,8

.05 Amp

220 mA

1.9 V

1.7 V

1.8

YES

CMOS

BALL

.8 mm

BOTTOM

NOT SPECIFIED

8 mm

W971GG6SB25I by Winbond Electronics

W971GG6SB25I

Winbond Electronics

The Winbond Electronics W971GG6SB25I is a DDR2 DRAM with 64MX16 organization, 1.8V nominal voltage, and 67108864 words capacity. It features synchronous operation, self-refresh capability, and multi-bank page burst access mode. Ideal for applications requiring high-speed memory performance in compact electronic devices.

MULTI BANK PAGE BURST

.4 ns

AUTO/SELF REFRESH

R-PBGA-B84

12.5 mm

1073741824 bit

DDR2 DRAM

16

1

1

84

67108864 words

64M

SYNCHRONOUS

64MX16

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

NOT SPECIFIED

1.2 mm

YES

1.9 V

1.7 V

1.8

YES

CMOS

BALL

.8 mm

BOTTOM

NOT SPECIFIED

8 mm

W9812G6KH-5I by Winbond Electronics

W9812G6KH-5I

Winbond Electronics

W9812G6KH-5I by Winbond Electronics is an 8MX16 Synchronous DRAM with 134217728-bit memory density. It operates at a voltage range of 3V to 3.6V and has a max access time of 4.5ns. Ideal for industrial applications requiring fast and reliable memory performance in compact spaces.

FOUR BANK PAGE BURST

4.5 ns

AUTO/SELF REFRESH

R-PDSO-G54

22.22 mm

134217728 bit

SYNCHRONOUS DRAM

16

1

1

54

8388608 words

8M

SYNCHRONOUS

85 Cel

-40 Cel

8MX16

PLASTIC/EPOXY

TSOP2

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

NOT SPECIFIED

1.2 mm

YES

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

GULL WING

.8 mm

DUAL

NOT SPECIFIED

10.16 mm

W989D6DBGX6E by Winbond Electronics

W989D6DBGX6E

Winbond Electronics

W989D6DBGX6E by Winbond Electronics is a 32MX16 SDRAM with 536MB memory density. Operating at 1.8V, it offers synchronous self-refresh mode and fast access time of 5ns. Ideal for applications requiring high-speed data processing in compact devices like smartphones and tablets.

FOUR BANK PAGE BURST

5 ns

AUTO/SELF REFRESH

R-PBGA-B54

9 mm

536870912 bit

SYNCHRONOUS DRAM

16

1

1

54

33554432 words

32M

SYNCHRONOUS

32MX16

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

NOT SPECIFIED

1.025 mm

YES

1.95 V

1.7 V

1.8

YES

CMOS

BALL

.8 mm

BOTTOM

NOT SPECIFIED

8 mm

W631GU6MB12I by Winbond Electronics

W631GU6MB12I

Winbond Electronics

The Winbond Electronics W631GU6MB12I is a DDR3L DRAM with 64MX16 organization, 67108864 words, and 1073741824 bit memory density. It operates synchronously at temperatures ranging from -40 to 95 °C and features self-refresh capability. Ideal for industrial applications requiring high-speed, low-power memory solutions.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B96

13 mm

1073741824 bit

DDR3L DRAM

16

1

1

96

67108864 words

64M

SYNCHRONOUS

95 Cel

-40 Cel

64MX16

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

NOT SPECIFIED

1 mm

YES

1.45 V

1.283 V

1.35

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

NOT SPECIFIED

7.5 mm

W9864G6JT-6ITR by Winbond Electronics

W9864G6JT-6ITR

Winbond Electronics

W9864G6JT-6ITR by Winbond Electronics is a 4MX16 Synchronous DRAM with 67108864 bit memory density. It operates at 3.3V, has a max access time of 5ns, and supports four bank page burst access mode. This thin profile memory IC is ideal for industrial applications requiring high-speed data processing in compact spaces.

FOUR BANK PAGE BURST

5 ns

AUTO/SELF REFRESH

COMMON

1,2,4,8

S-PBGA-B54

8 mm

67108864 bit

SYNCHRONOUS DRAM

16

1

1

54

4194304 words

4M

SYNCHRONOUS

85 Cel

-40 Cel

4MX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA54,9X9,32

SQUARE

GRID ARRAY, THIN PROFILE, FINE PITCH

4096

1.2 mm

YES

1,2,4,8,FP

.002 Amp

3 V

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

8 mm

W66CP2NQUAFJ by Winbond Electronics

W66CP2NQUAFJ

Winbond Electronics

Winbond Electronics' W66CP2NQUAFJ is a 128MX32 LPDDR4 DRAM with 134,217,728 words and 4294967296 bit memory density. Operating at up to 1600 MHz, it features synchronous mode and self-refresh capability. Ideal for applications requiring high-speed data processing in compact devices.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY; TERM PITCH-MAX

1600 MHz

COMMON

16,32

R-PBGA-B200

14.5 mm

4294967296 bit

LPDDR4 DRAM

32

1

1

200

134217728 words

128M

SYNCHRONOUS

105 Cel

-40 Cel

128MX32

PLASTIC/EPOXY

VFBGA

BGA200,12X22,32/25

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.8 mm

YES

16,32

1.17 V

1.06 V

1.1

YES

CMOS

BALL

.8 mm

BOTTOM

10 mm

W66CP2NQUAGJ by Winbond Electronics

W66CP2NQUAGJ

Winbond Electronics

Winbond Electronics LPDDR4 DRAM W66CP2NQUAGJ features 128MX32 organization, operates at up to 1869.1 MHz clock frequency, and has a memory density of 4294967296 bit. Ideal for applications requiring high-speed synchronous operation in compact devices like smartphones and tablets.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY; TERM PITCH-MAX

1869.1 MHz

COMMON

16,32

R-PBGA-B200

14.5 mm

4294967296 bit

LPDDR4 DRAM

32

1

1

200

134217728 words

128M

SYNCHRONOUS

105 Cel

-40 Cel

128MX32

PLASTIC/EPOXY

VFBGA

BGA200,12X22,32/25

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.8 mm

YES

16,32

1.17 V

1.06 V

1.1

YES

CMOS

BALL

.8 mm

BOTTOM

10 mm

W66CP2NQUAHJ by Winbond Electronics

W66CP2NQUAHJ

Winbond Electronics

Winbond Electronics LPDDR4 DRAM W66CP2NQUAHJ features 128MX32 organization, operates at up to 2136.7 MHz clock frequency, and has a memory density of 4294967296 bit. Ideal for applications requiring high-speed synchronous operation in compact devices with limited space constraints.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY; TERM PITCH-MAX

2136.7 MHz

COMMON

16,32

R-PBGA-B200

14.5 mm

4294967296 bit

LPDDR4 DRAM

32

1

1

200

134217728 words

128M

SYNCHRONOUS

105 Cel

-40 Cel

128MX32

PLASTIC/EPOXY

VFBGA

BGA200,12X22,32/25

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.8 mm

YES

16,32

1.17 V

1.06 V

1.1

YES

CMOS

BALL

.8 mm

BOTTOM

10 mm

W631GG6NB-12 by Winbond Electronics

W631GG6NB-12

Winbond Electronics

DDR3 DRAM; Temperature Grade: OTHER; No. of Terminals: 96; Package Code: VFBGA; Package Shape: RECTANGULAR; Surface Mount: YES;

MULTI BANK PAGE BURST

20 ns

800 MHz

COMMON

8

R-PBGA-B96

13 mm

1073741824 bit

DDR3 DRAM

16

1

1

96

67108864 words

64M

SYNCHRONOUS

95 Cel

0 Cel

64MX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA96,9X16,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1 mm

YES

8

.04 Amp

220 mA

1.575 V

1.425 V

1.5

YES

CMOS

OTHER

BALL

.8 mm

BOTTOM

7.5 mm

W631GG6NB09I by Winbond Electronics

W631GG6NB09I

Winbond Electronics

Winbond Electronics' W631GG6NB09I is a 64MX16 DDR3 DRAM with 1066 MHz clock frequency, 1.5V supply voltage, and 95°C operating temperature. Ideal for industrial applications requiring high memory density and fast access times.

MULTI BANK PAGE BURST

20 ns

1066 MHz

COMMON

8

R-PBGA-B96

13 mm

1073741824 bit

DDR3 DRAM

16

1

1

96

67108864 words

64M

SYNCHRONOUS

95 Cel

-40 Cel

64MX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA96,9X16,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1 mm

YES

8

.05 Amp

270 mA

1.575 V

1.425 V

1.5

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

7.5 mm

W631GG6NB12I by Winbond Electronics

W631GG6NB12I

Winbond Electronics

W631GG6NB12I by Winbond Electronics is a DDR3 DRAM with 64MX16 organization, operating at up to 800 MHz clock frequency. It features a 1.5V nominal voltage and offers a memory density of 1073741824 bits. This industrial-grade DRAM is suitable for applications requiring high-speed synchronous memory operations.

MULTI BANK PAGE BURST

20 ns

800 MHz

COMMON

8

R-PBGA-B96

13 mm

1073741824 bit

DDR3 DRAM

16

1

1

96

67108864 words

64M

SYNCHRONOUS

95 Cel

-40 Cel

64MX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA96,9X16,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1 mm

YES

8

.04 Amp

220 mA

1.575 V

1.425 V

1.5

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

7.5 mm

W631GG6NB11I by Winbond Electronics

W631GG6NB11I

Winbond Electronics

Winbond Electronics' W631GG6NB11I is a DDR3 DRAM with 64MX16 organization, operating at up to 933 MHz. It features a very thin profile grid array package and supports multi-bank page burst access mode. Ideal for industrial applications requiring high memory density and fast data processing capabilities.

MULTI BANK PAGE BURST

20 ns

933 MHz

COMMON

8

R-PBGA-B96

13 mm

1073741824 bit

DDR3 DRAM

16

1

1

96

67108864 words

64M

SYNCHRONOUS

95 Cel

-40 Cel

64MX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA96,9X16,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1 mm

YES

8

.045 Amp

240 mA

1.575 V

1.425 V

1.5

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

7.5 mm

W631GG6NB-09 by Winbond Electronics

W631GG6NB-09

Winbond Electronics

Winbond Electronics' W631GG6NB-09 is a DDR3 DRAM with 64MX16 organization, operating at 1066 MHz. It features a 1.5V nominal voltage and offers multi-bank page burst access mode. This memory module is suitable for applications requiring high-speed synchronous operation in devices with limited space constraints.

MULTI BANK PAGE BURST

20 ns

1066 MHz

COMMON

8

R-PBGA-B96

13 mm

1073741824 bit

DDR3 DRAM

16

1

1

96

67108864 words

64M

SYNCHRONOUS

95 Cel

0 Cel

64MX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA96,9X16,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1 mm

YES

8

.05 Amp

270 mA

1.575 V

1.425 V

1.5

YES

CMOS

OTHER

BALL

.8 mm

BOTTOM

7.5 mm

W631GU6NB09I by Winbond Electronics

W631GU6NB09I

Winbond Electronics

Winbond Electronics' W631GU6NB09I is a DDR3L DRAM with 64MX16 organization, operating at 1066 MHz. Featuring synchronous mode and self-refresh capability, it has a memory density of 1073741824 bit. Ideal for industrial applications requiring high-speed data processing in compact devices.

MULTI BANK PAGE BURST

20 ns

1066 MHz

COMMON

8

R-PBGA-B96

13 mm

1073741824 bit

DDR3L DRAM

16

1

1

96

67108864 words

64M

SYNCHRONOUS

95 Cel

-40 Cel

64MX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA96,9X16,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1 mm

YES

8

.06 Amp

270 mA

1.45 V

1.283 V

1.35

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

7.5 mm

W631GU6NB-09 by Winbond Electronics

W631GU6NB-09

Winbond Electronics

The Winbond Electronics W631GU6NB-09 is a DDR3L DRAM with 64MX16 organization, operating at 1066 MHz. It features synchronous operation, self-refresh capability, and a max clock frequency of 1066 MHz. Ideal for applications requiring high-speed memory access in devices such as laptops, tablets, and networking equipment.

MULTI BANK PAGE BURST

20 ns

1066 MHz

COMMON

8

R-PBGA-B96

13 mm

1073741824 bit

DDR3L DRAM

16

1

1

96

67108864 words

64M

SYNCHRONOUS

95 Cel

0 Cel

64MX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA96,9X16,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1 mm

YES

8

.06 Amp

270 mA

1.45 V

1.283 V

1.35

YES

CMOS

OTHER

BALL

.8 mm

BOTTOM

7.5 mm

W631GU6NB11I by Winbond Electronics

W631GU6NB11I

Winbond Electronics

Winbond Electronics' W631GU6NB11I is a DDR3L DRAM with 64MX16 organization, operating at up to 933 MHz. Featuring synchronous mode and self-refresh capability, it has a memory density of 1073741824 bit. Ideal for industrial applications requiring high-speed data processing in compact devices.

MULTI BANK PAGE BURST

20 ns

933 MHz

COMMON

8

R-PBGA-B96

13 mm

1073741824 bit

DDR3L DRAM

16

1

1

96

67108864 words

64M

SYNCHRONOUS

95 Cel

-40 Cel

64MX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA96,9X16,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1 mm

YES

8

.055 Amp

240 mA

1.45 V

1.283 V

1.35

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

7.5 mm

W631GU6NB-12 by Winbond Electronics

W631GU6NB-12

Winbond Electronics

W631GU6NB-12 by Winbond Electronics is a DDR3L DRAM with 64MX16 organization, operating at up to 800 MHz. It features a low supply voltage of 1.35V and offers a memory density of 1073741824 bits. Ideal for applications requiring high-speed synchronous memory with common I/O type and self-refresh capability.

MULTI BANK PAGE BURST

20 ns

800 MHz

COMMON

8

R-PBGA-B96

13 mm

1073741824 bit

DDR3L DRAM

16

1

1

96

67108864 words

64M

SYNCHRONOUS

95 Cel

0 Cel

64MX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA96,9X16,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1 mm

YES

8

.055 Amp

220 mA

1.45 V

1.283 V

1.35

YES

CMOS

OTHER

BALL

.8 mm

BOTTOM

7.5 mm

W631GU6NB12I by Winbond Electronics

W631GU6NB12I

Winbond Electronics

W631GU6NB12I by Winbond Electronics is a DDR3L DRAM with 64MX16 organization, operating at a max clock frequency of 800 MHz. It has a memory density of 1Gb and is suitable for industrial temperature grade applications.

MULTI BANK PAGE BURST

20 ns

800 MHz

COMMON

8

R-PBGA-B96

13 mm

1073741824 bit

DDR3L DRAM

16

1

1

96

67108864 words

64M

SYNCHRONOUS

95 Cel

-40 Cel

64MX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA96,9X16,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1 mm

YES

8

.055 Amp

220 mA

1.45 V

1.283 V

1.35

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

7.5 mm