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SQUARE DRAM 241

DRAM
Part# Info Specs
Part RoHS Manufacturer Description Access Mode Maximum Access Time Additional Features Alternate Memory Width Maximum Clock Frequency (fCLK) Input/Output Type Interleaved Burst Length JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Mixed Memory Type Moisture Sensitivity Level (MSL) Nominal Negative Supply Voltage No. of Functions No. of Ports No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Qualification Refresh Cycles Reverse Pinout Screening Level Maximum Seated Height Self Refresh Sequential Burst Length Maximum Standby Current Minimum Standby Voltage Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Width
EDB8164B4PT-1DIT-F-D by Micron Technology

EDB8164B4PT-1DIT-F-D

Micron Technology

LPDDR2 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 216; Package Code: VFBGA; Package Shape: SQUARE; Length: 12 mm;

SINGLE BANK PAGE BURST

AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOM

S-PBGA-B216

12 mm

8589934592 bit

LPDDR2 DRAM

64

1

1

216

134217728 words

128M

SYNCHRONOUS

85 Cel

-40 Cel

128MX64

PLASTIC/EPOXY

VFBGA

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.8 mm

YES

1.95 V

1.14 V

1.2

YES

CMOS

INDUSTRIAL

BALL

.4 mm

BOTTOM

12 mm

EDBA164B2PR-1D-F-D by Micron Technology

EDBA164B2PR-1D-F-D

Micron Technology

LPDDR2 DRAM; No. of Terminals: 216; Package Code: VFBGA; Package Shape: SQUARE; Surface Mount: YES; Terminal Form: BALL;

DUAL BANK PAGE BURST

AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY

S-PBGA-B216

12 mm

17179869184 bit

LPDDR2 DRAM

64

1

1

216

268435456 words

256M

SYNCHRONOUS

256MX64

PLASTIC/EPOXY

VFBGA

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

NOT SPECIFIED

1 mm

YES

1.3 V

1.14 V

1.2

YES

CMOS

BALL

.4 mm

BOTTOM

NOT SPECIFIED

12 mm

EDB4432BBPA-1D-F-D by Micron Technology

EDB4432BBPA-1D-F-D

Micron Technology

Micron Technology's EDB4432BBPA-1D-F-D is a 128MX32 LPDDR2 DRAM with 4294967296 bit memory density. Operating at 1.2V, it features synchronous mode and self-refresh capability. Ideal for applications requiring single bank page burst access mode in a compact GRID ARRAY package style.

SINGLE BANK PAGE BURST

AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY

S-PBGA-B168

e1

12 mm

4294967296 bit

LPDDR2 DRAM

32

1

1

168

134217728 words

128M

SYNCHRONOUS

128MX32

PLASTIC/EPOXY

VFBGA

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.8 mm

YES

1.3 V

1.14 V

1.2

YES

CMOS

TIN SILVER COPPER

BALL

.5 mm

BOTTOM

12 mm

EDB4432BBPA-1D-F-R by Micron Technology

EDB4432BBPA-1D-F-R

Micron Technology

Micron Technology's EDB4432BBPA-1D-F-R is a 128MX32 LPDDR2 DRAM with 4294967296 bit memory density. Operating at 1.2V, it features synchronous mode and self-refresh capability. Ideal for applications requiring single bank page burst access mode in a compact GRID ARRAY package style.

SINGLE BANK PAGE BURST

AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY

S-PBGA-B168

e1

12 mm

4294967296 bit

LPDDR2 DRAM

32

1

1

168

134217728 words

128M

SYNCHRONOUS

128MX32

PLASTIC/EPOXY

VFBGA

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.8 mm

YES

1.3 V

1.14 V

1.2

YES

CMOS

TIN SILVER COPPER

BALL

.5 mm

BOTTOM

12 mm

EDB8132B4PB-8D-F-D by Micron Technology

EDB8132B4PB-8D-F-D

Micron Technology

Micron Technology's EDB8132B4PB-8D-F-D is a 256MX32 LPDDR2 DRAM with a square package and PLASTIC/EPOXY body material. It operates in SYNCHRONOUS mode, has a self-refresh feature, and requires a nominal voltage of 1.2V. This memory module is suitable for applications that require high-density data storage and fast access speeds.

SINGLE BANK PAGE BURST

AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY

S-PBGA-B168

12 mm

8589934592 bit

LPDDR2 DRAM

32

1

1

168

268435456 words

256M

SYNCHRONOUS

256MX32

PLASTIC/EPOXY

VFBGA

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

NOT SPECIFIED

.8 mm

YES

1.3 V

1.14 V

1.2

YES

CMOS

BALL

.5 mm

BOTTOM

NOT SPECIFIED

12 mm

EDB8132B4PM-1D-F-D by Micron Technology

EDB8132B4PM-1D-F-D

Micron Technology

LPDDR2 DRAM; No. of Terminals: 168; Package Code: VFBGA; Package Shape: SQUARE; Terminal Form: BALL; No. of Functions: 1;

DUAL BANK PAGE BURST

AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY

S-PBGA-B168

12 mm

8589934592 bit

LPDDR2 DRAM

32

1

1

168

268435456 words

256M

SYNCHRONOUS

256MX32

PLASTIC/EPOXY

VFBGA

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

NOT SPECIFIED

.82 mm

YES

1.3 V

1.14 V

1.2

YES

CMOS

BALL

.5 mm

BOTTOM

NOT SPECIFIED

12 mm

EDBA232B2PB-1D-F-D by Micron Technology

EDBA232B2PB-1D-F-D

Micron Technology

LPDDR2 DRAM; No. of Terminals: 168; Package Code: VFBGA; Package Shape: SQUARE; Nominal Supply Voltage / Vsup (V): 1.2; Terminal Form: BALL;

DUAL BANK PAGE BURST

AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY

S-PBGA-B168

e1

12 mm

17179869184 bit

LPDDR2 DRAM

32

1

1

168

536870912 words

512M

SYNCHRONOUS

512MX32

PLASTIC/EPOXY

VFBGA

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

260

1 mm

YES

1.3 V

1.14 V

1.2

YES

CMOS

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.5 mm

BOTTOM

30

12 mm

EDBA232B2PF-1D-F-D by Micron Technology

EDBA232B2PF-1D-F-D

Micron Technology

LPDDR2 DRAM; No. of Terminals: 168; Package Code: TFBGA; Package Shape: SQUARE; Additional Features: AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY; Terminal Finish: Tin/Silver/Copper (Sn/Ag/Cu);

DUAL BANK PAGE BURST

AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY

S-PBGA-B168

e1

12 mm

17179869184 bit

LPDDR2 DRAM

32

1

1

168

536870912 words

512M

SYNCHRONOUS

512MX32

PLASTIC/EPOXY

TFBGA

SQUARE

GRID ARRAY, THIN PROFILE, FINE PITCH

260

1.02 mm

YES

1.3 V

1.14 V

1.2

YES

CMOS

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.5 mm

BOTTOM

30

12 mm

EDBM432B3PF-1D-F-D by Micron Technology

EDBM432B3PF-1D-F-D

Micron Technology

LPDDR2 DRAM; No. of Terminals: 168; Package Code: VFBGA; Package Shape: SQUARE; No. of Ports: 1; Minimum Supply Voltage (Vsup): 1.14 V;

DUAL BANK PAGE BURST

AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY

S-PBGA-B168

12 mm

12884901888 bit

LPDDR2 DRAM

32

1

1

168

402653184 words

384M

SYNCHRONOUS

384MX32

PLASTIC/EPOXY

VFBGA

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.92 mm

YES

1.3 V

1.14 V

1.2

YES

CMOS

BALL

.5 mm

BOTTOM

12 mm

MT46H128M32L2KQ-5IT:BTR by Micron Technology

MT46H128M32L2KQ-5IT:BTR

Micron Technology

DDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 168; Package Code: VFBGA; Package Shape: SQUARE; Terminal Pitch: .5 mm;

FOUR BANK PAGE BURST

5 ns

AUTO/SELF REFRESH

S-PBGA-B168

e1

12 mm

4294967296 bit

DDR1 DRAM

32

1

1

168

134217728 words

128M

SYNCHRONOUS

85 Cel

-40 Cel

128MX32

PLASTIC/EPOXY

VFBGA

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.75 mm

YES

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.5 mm

BOTTOM

12 mm

MT48LC4M16A2B4-7E:GTR by Micron Technology

MT48LC4M16A2B4-7E:GTR

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 54; Package Code: VFBGA; Package Shape: SQUARE; Operating Mode: SYNCHRONOUS;

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

S-PBGA-B54

e1

8 mm

67108864 bit

SYNCHRONOUS DRAM

16

1

1

54

4194304 words

4M

SYNCHRONOUS

70 Cel

0 Cel

4MX16

PLASTIC/EPOXY

VFBGA

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1 mm

YES

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

8 mm

MT48LC8M16A2B4-75IT:GTR by Micron Technology

MT48LC8M16A2B4-75IT:GTR

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 54; Package Code: VFBGA; Package Shape: SQUARE; Memory Width: 16;

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

S-PBGA-B54

e1

8 mm

134217728 bit

SYNCHRONOUS DRAM

16

1

1

54

8388608 words

8M

SYNCHRONOUS

85 Cel

-40 Cel

8MX16

PLASTIC/EPOXY

VFBGA

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1 mm

YES

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

8 mm

MT46H64M32L2JG-6IT:ATR by Micron Technology

MT46H64M32L2JG-6IT:ATR

Micron Technology

LPDDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 168; Package Code: VFBGA; Package Shape: SQUARE; Technology: CMOS;

FOUR BANK PAGE BURST

6 ns

AUTO/SELF REFRESH

S-PBGA-B168

e1

12 mm

2147483648 bit

LPDDR1 DRAM

32

1

1

168

67108864 words

64M

SYNCHRONOUS

85 Cel

-40 Cel

64MX32

PLASTIC/EPOXY

VFBGA

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.9 mm

YES

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.5 mm

BOTTOM

12 mm

MT46H128M32L2KQ-5WT:BTR by Micron Technology

MT46H128M32L2KQ-5WT:BTR

Micron Technology

DDR1 DRAM; Temperature Grade: OTHER; No. of Terminals: 168; Package Code: VFBGA; Package Shape: SQUARE; Additional Features: AUTO/SELF REFRESH;

FOUR BANK PAGE BURST

5 ns

AUTO/SELF REFRESH

S-PBGA-B168

e1

12 mm

4294967296 bit

DDR1 DRAM

32

1

1

168

134217728 words

128M

SYNCHRONOUS

85 Cel

-20 Cel

128MX32

PLASTIC/EPOXY

VFBGA

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.75 mm

YES

1.95 V

1.7 V

1.8

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

.5 mm

BOTTOM

12 mm

MT46H32M32LFMA-5IT:BTR by Micron Technology

MT46H32M32LFMA-5IT:BTR

Micron Technology

DDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 168; Package Code: VFBGA; Package Shape: SQUARE; Technology: CMOS;

FOUR BANK PAGE BURST

5 ns

AUTO/SELF REFRESH

S-PBGA-B168

e1

12 mm

1073741824 bit

DDR1 DRAM

32

1

1

168

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX32

PLASTIC/EPOXY

VFBGA

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.7 mm

YES

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.5 mm

BOTTOM

12 mm

MT46H128M32L2KQ-48IT:CTR by Micron Technology

MT46H128M32L2KQ-48IT:CTR

Micron Technology

LPDDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 168; Package Code: VFBGA; Package Shape: SQUARE; Organization: 128MX32;

FOUR BANK PAGE BURST

5 ns

AUTO/SELF REFRESH

S-PBGA-B168

e1

12 mm

4294967296 bit

LPDDR1 DRAM

32

1

1

168

134217728 words

128M

SYNCHRONOUS

85 Cel

-40 Cel

128MX32

PLASTIC/EPOXY

VFBGA

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.75 mm

YES

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.5 mm

BOTTOM

12 mm

MT46H128M32L2KQ-48WT:CTR by Micron Technology

MT46H128M32L2KQ-48WT:CTR

Micron Technology

LPDDR1 DRAM; Temperature Grade: OTHER; No. of Terminals: 168; Package Code: VFBGA; Package Shape: SQUARE; Additional Features: AUTO/SELF REFRESH;

FOUR BANK PAGE BURST

5 ns

AUTO/SELF REFRESH

S-PBGA-B168

e1

12 mm

4294967296 bit

LPDDR1 DRAM

32

1

1

168

134217728 words

128M

SYNCHRONOUS

85 Cel

-25 Cel

128MX32

PLASTIC/EPOXY

VFBGA

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.75 mm

YES

1.95 V

1.7 V

1.8

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

.5 mm

BOTTOM

12 mm

MT44K16M36RB-093E:B by Micron Technology

MT44K16M36RB-093E:B

Micron Technology

DDR DRAM; No. of Terminals: 168; Package Code: TBGA; Package Shape: SQUARE; JESD-30 Code: S-PBGA-B168; Package Style (Meter): GRID ARRAY, THIN PROFILE;

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

S-PBGA-B168

e1

13.5 mm

603979776 bit

DDR DRAM

36

1

1

168

16777216 words

16M

SYNCHRONOUS

16MX36

PLASTIC/EPOXY

TBGA

SQUARE

GRID ARRAY, THIN PROFILE

1.2 mm

YES

1.42 V

1.28 V

1.35

YES

CMOS

TIN SILVER COPPER

BALL

1 mm

BOTTOM

13.5 mm

MT52L256M64D2GN-107WT:B by Micron Technology

MT52L256M64D2GN-107WT:B

Micron Technology

LPDDR3 DRAM; No. of Terminals: 256; Package Code: VFBGA; Package Shape: SQUARE; Minimum Supply Voltage (Vsup): 1.14 V; Terminal Finish: TIN SILVER COPPER;

SINGLE BANK PAGE BURST

AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOM

S-PBGA-B256

e1

14 mm

17179869184 bit

LPDDR3 DRAM

64

1

1

256

268435456 words

256M

SYNCHRONOUS

256MX64

PLASTIC/EPOXY

VFBGA

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.7 mm

YES

1.3 V

1.14 V

1.2

YES

CMOS

TIN SILVER COPPER

BALL

.4 mm

BOTTOM

14 mm

EDB8132B4PM-1DAT-F-D by Micron Technology

EDB8132B4PM-1DAT-F-D

Micron Technology

LPDDR2 DRAM; No. of Terminals: 168; Package Code: VFBGA; Package Shape: SQUARE; No. of Ports: 1; Maximum Seated Height: .82 mm;

DUAL BANK PAGE BURST

AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOM

S-PBGA-B168

12 mm

8589934592 bit

LPDDR2 DRAM

32

1

1

168

268435456 words

256M

SYNCHRONOUS

256MX32

PLASTIC/EPOXY

VFBGA

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

260

.82 mm

YES

1.3 V

1.14 V

1.2

YES

CMOS

Tin/Silver/Copper (Sn96.8Ag3.0Cu0.2)

BALL

.5 mm

BOTTOM

30

12 mm

MT52L256M64D2LZ-107XT:B by Micron Technology

MT52L256M64D2LZ-107XT:B

Micron Technology

LPDDR3 DRAM; Temperature Grade: OTHER; No. of Terminals: 216; Package Code: VFBGA; Package Shape: SQUARE; Self Refresh: YES;

SINGLE BANK PAGE BURST

AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOM

933 MHz

COMMON

S-PBGA-B216

12 mm

17179869184 bit

LPDDR3 DRAM

64

1

1

216

268435456 words

256M

SYNCHRONOUS

105 Cel

-30 Cel

256MX64

3-STATE

PLASTIC/EPOXY

VFBGA

BGA216,29X29,16

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.8 mm

YES

.012 Amp

320 mA

1.3 V

1.14 V

1.2

YES

CMOS

OTHER

BALL

.4 mm

BOTTOM

12 mm

EDF8164A3MA-GD-F-D by Micron Technology

EDF8164A3MA-GD-F-D

Micron Technology

LPDDR3 DRAM; Temperature Grade: OTHER; No. of Terminals: 253; Package Code: VFBGA; Package Shape: SQUARE; Operating Mode: SYNCHRONOUS;

SINGLE BANK PAGE BURST

AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOM

S-PBGA-B253

11 mm

8589934592 bit

LPDDR3 DRAM

64

1

1

253

134217728 words

128M

SYNCHRONOUS

85 Cel

-30 Cel

128MX64

PLASTIC/EPOXY

VFBGA

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.85 mm

YES

1.3 V

1.14 V

1.2

YES

CMOS

OTHER

BALL

.5 mm

BOTTOM

11 mm

EDFA164A2MA-GD-F-D by Micron Technology

EDFA164A2MA-GD-F-D

Micron Technology

LPDDR3 DRAM; Temperature Grade: OTHER; No. of Terminals: 253; Package Code: VFBGA; Package Shape: SQUARE; Length: 11 mm;

DUAL BANK PAGE BURST

AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOM

S-PBGA-B253

11 mm

17179869184 bit

LPDDR3 DRAM

64

1

1

253

268435456 words

256M

SYNCHRONOUS

85 Cel

-30 Cel

256MX64

PLASTIC/EPOXY

VFBGA

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1 mm

YES

1.3 V

1.14 V

1.2

YES

CMOS

OTHER

BALL

.5 mm

BOTTOM

11 mm

EDFA164A2MA-JD-F-D by Micron Technology

EDFA164A2MA-JD-F-D

Micron Technology

LPDDR3 DRAM; Temperature Grade: OTHER; No. of Terminals: 253; Package Code: VFBGA; Package Shape: SQUARE; Minimum Supply Voltage (Vsup): 1.14 V;

DUAL BANK PAGE BURST

AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOM

S-PBGA-B253

11 mm

17179869184 bit

LPDDR3 DRAM

64

1

1

253

268435456 words

256M

SYNCHRONOUS

85 Cel

-30 Cel

256MX64

PLASTIC/EPOXY

VFBGA

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1 mm

YES

1.3 V

1.14 V

1.2

YES

CMOS

OTHER

BALL

.5 mm

BOTTOM

11 mm

EDFA364A3MA-GD-F-D by Micron Technology

EDFA364A3MA-GD-F-D

Micron Technology

LPDDR3 DRAM; Temperature Grade: OTHER; No. of Terminals: 253; Package Code: VFBGA; Package Shape: SQUARE; No. of Functions: 1;

SINGLE BANK PAGE BURST

AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOM

S-PBGA-B253

12.5 mm

17179869184 bit

LPDDR3 DRAM

64

1

1

253

268435456 words

256M

SYNCHRONOUS

85 Cel

-30 Cel

256MX64

PLASTIC/EPOXY

VFBGA

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

NOT SPECIFIED

.85 mm

YES

1.3 V

1.14 V

1.2

YES

CMOS

OTHER

BALL

.5 mm

BOTTOM

NOT SPECIFIED

12.5 mm

EDFB164A1MA-GD-F-D by Micron Technology

EDFB164A1MA-GD-F-D

Micron Technology

LPDDR3 DRAM; Temperature Grade: OTHER; No. of Terminals: 253; Package Code: VFBGA; Package Shape: SQUARE; Terminal Position: BOTTOM;

DUAL BANK PAGE BURST

AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOM

S-PBGA-B253

12.5 mm

34359738368 bit

LPDDR3 DRAM

64

1

1

253

536870912 words

512M

SYNCHRONOUS

85 Cel

-30 Cel

512MX64

PLASTIC/EPOXY

VFBGA

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.95 mm

YES

1.3 V

1.14 V

1.2

YES

CMOS

OTHER

BALL

.5 mm

BOTTOM

12.5 mm

EDFB164A1MA-JD-F-D by Micron Technology

EDFB164A1MA-JD-F-D

Micron Technology

LPDDR3 DRAM; Temperature Grade: OTHER; No. of Terminals: 253; Package Code: VFBGA; Package Shape: SQUARE; Self Refresh: YES;

DUAL BANK PAGE BURST

AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOM

S-PBGA-B253

12.5 mm

34359738368 bit

LPDDR3 DRAM

64

1

1

253

536870912 words

512M

SYNCHRONOUS

85 Cel

-30 Cel

512MX64

PLASTIC/EPOXY

VFBGA

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.95 mm

YES

1.3 V

1.14 V

1.2

YES

CMOS

OTHER

BALL

.5 mm

BOTTOM

12.5 mm

EDFP164A3PD-JD-F-D by Micron Technology

EDFP164A3PD-JD-F-D

Micron Technology

LPDDR3 DRAM; Temperature Grade: OTHER; No. of Terminals: 256; Package Code: VFBGA; Package Shape: SQUARE; No. of Words Code: 384M;

DUAL BANK PAGE BURST

AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOM

S-PBGA-B256

14 mm

25769803776 bit

LPDDR3 DRAM

64

1

1

256

402653184 words

384M

SYNCHRONOUS

85 Cel

-30 Cel

384MX64

PLASTIC/EPOXY

VFBGA

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

NOT SPECIFIED

.8 mm

YES

1.3 V

1.14 V

1.2

YES

CMOS

OTHER

BALL

.4 mm

BOTTOM

NOT SPECIFIED

14 mm

IS42S16160J-7BL-TR by Integrated Silicon Solution

IS42S16160J-7BL-TR

Integrated Silicon Solution

IS42S16160J-7BL-TR by Integrated Silicon Solution is a 16MX16 Synchronous DRAM with 268Mbit memory density. Operating at 3.3V, it offers a max access time of 5.4ns and features self-refresh capability. Ideal for applications requiring high-speed memory performance in commercial temperature environments.

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

S-PBGA-B54

e1

8 mm

268435456 bit

SYNCHRONOUS DRAM

16

1

1

54

16777216 words

16M

SYNCHRONOUS

70 Cel

0 Cel

16MX16

PLASTIC/EPOXY

TFBGA

SQUARE

GRID ARRAY, THIN PROFILE, FINE PITCH

260

1.2 mm

YES

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

8 mm

MT48LC8M16A2B4-6AXIT:L by Micron Technology

MT48LC8M16A2B4-6AXIT:L

Micron Technology

Micron Technology's MT48LC8M16A2B4-6AXIT:L is a 8MX16 Synchronous DRAM with 134217728 bit memory density. It operates at 3.3V, has a peak reflow temp of 260°C, and offers a max access time of 5.4 ns. Ideal for industrial applications requiring high-speed and reliable memory performance.

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

S-PBGA-B54

e1

8 mm

134217728 bit

SYNCHRONOUS DRAM

16

1

1

54

8388608 words

8M

SYNCHRONOUS

85 Cel

-40 Cel

8MX16

PLASTIC/EPOXY

VFBGA

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

260

1 mm

YES

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.8 mm

BOTTOM

30

8 mm

MT48LC4M16A2B4-75IT:GTR by Micron Technology

MT48LC4M16A2B4-75IT:GTR

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 54; Package Code: VFBGA; Package Shape: SQUARE; Minimum Supply Voltage (Vsup): 3 V;

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

S-PBGA-B54

e1

8 mm

67108864 bit

SYNCHRONOUS DRAM

16

1

1

54

4194304 words

4M

SYNCHRONOUS

85 Cel

-40 Cel

4MX16

PLASTIC/EPOXY

VFBGA

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

260

1 mm

YES

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.8 mm

BOTTOM

30

8 mm

MT48LC16M16A2F4-6A:GTR by Micron Technology

MT48LC16M16A2F4-6A:GTR

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 54; Package Code: VFBGA; Package Shape: SQUARE; No. of Functions: 1;

FOUR BANK PAGE BURST

5.4 ns

AUTO REFRESH

S-PBGA-B54

e1

8 mm

268435456 bit

SYNCHRONOUS DRAM

16

1

1

54

16777216 words

16M

SYNCHRONOUS

70 Cel

0 Cel

16MX16

PLASTIC/EPOXY

VFBGA

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

260

1 mm

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.8 mm

BOTTOM

30

8 mm

MT48LC16M16A2F4-6AIT:GTR by Micron Technology

MT48LC16M16A2F4-6AIT:GTR

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 54; Package Code: VFBGA; Package Shape: SQUARE; Maximum Seated Height: 1 mm;

FOUR BANK PAGE BURST

5.4 ns

AUTO REFRESH

S-PBGA-B54

e1

8 mm

268435456 bit

SYNCHRONOUS DRAM

16

1

1

54

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX16

PLASTIC/EPOXY

VFBGA

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1 mm

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

8 mm

MT44K32M36RB-083F:ATR by Micron Technology

MT44K32M36RB-083F:ATR

Micron Technology

DDR DRAM; Temperature Grade: OTHER; No. of Terminals: 168; Package Code: TBGA; Package Shape: SQUARE; Minimum Operating Temperature: 0 Cel;

MULTI BANK PAGE BURST

AUTO REFRESH

S-PBGA-B168

13.5 mm

1207959552 bit

DDR DRAM

36

1

1

168

33554432 words

32M

SYNCHRONOUS

95 Cel

0 Cel

32MX36

PLASTIC/EPOXY

TBGA

SQUARE

GRID ARRAY, THIN PROFILE

1.2 mm

1.42 V

1.28 V

1.35

YES

CMOS

OTHER

BALL

1 mm

BOTTOM

13.5 mm

MT52L256M64D2PP-107WT:B by Micron Technology

MT52L256M64D2PP-107WT:B

Micron Technology

LPDDR3 DRAM; Temperature Grade: OTHER; No. of Terminals: 216; Package Code: VFBGA; Package Shape: SQUARE; Organization: 256MX64;

SINGLE BANK PAGE BURST

AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOM

CONFIGURABLE

S-PBGA-B216

12 mm

17179869184 bit

LPDDR3 DRAM

64

1

1

216

268435456 words

256M

SYNCHRONOUS

85 Cel

-30 Cel

256MX64

COMMON

PLASTIC/EPOXY

VFBGA

BGA216,12X12,16

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

NO

.8 mm

YES

1.3 V

1.14 V

1.2

YES

CMOS

OTHER

BALL

.4 mm

BOTTOM

12 mm

IS42S16400J-6BLI-TR by Integrated Silicon Solution

IS42S16400J-6BLI-TR

Integrated Silicon Solution

IS42S16400J-6BLI-TR by Integrated Silicon Solution is a 4MX16 Synchronous DRAM with 3.3V supply, operating at 166MHz. It features self-refresh mode, 54 terminals in a thin profile grid array package, and supports common I/O type. Ideal for industrial applications requiring fast memory access and high density storage capabilities.

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

166 MHz

COMMON

1,2,4,8

S-PBGA-B54

e1

8 mm

67108864 bit

SYNCHRONOUS DRAM

16

1

1

54

4194304 words

4M

SYNCHRONOUS

85 Cel

-40 Cel

4MX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA54,9X9,32

SQUARE

GRID ARRAY, THIN PROFILE, FINE PITCH

3.3

Not Qualified

4096

1.2 mm

YES

1,2,4,8,FP

.002 Amp

DRAMs

150 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

8 mm

W9864G6JT-6ITR by Winbond Electronics

W9864G6JT-6ITR

Winbond Electronics

W9864G6JT-6ITR by Winbond Electronics is a 4MX16 Synchronous DRAM with 67108864 bit memory density. It operates at 3.3V, has a max access time of 5ns, and supports four bank page burst access mode. This thin profile memory IC is ideal for industrial applications requiring high-speed data processing in compact spaces.

FOUR BANK PAGE BURST

5 ns

AUTO/SELF REFRESH

COMMON

1,2,4,8

S-PBGA-B54

8 mm

67108864 bit

SYNCHRONOUS DRAM

16

1

1

54

4194304 words

4M

SYNCHRONOUS

85 Cel

-40 Cel

4MX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA54,9X9,32

SQUARE

GRID ARRAY, THIN PROFILE, FINE PITCH

4096

1.2 mm

YES

1,2,4,8,FP

.002 Amp

3 V

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

8 mm

AS4C32M16SB-7BINTR by Alliance Memory

AS4C32M16SB-7BINTR

Alliance Memory

Alliance Memory's AS4C32M16SB-7BINTR is a 32MX16 DRAM with 3.3V supply, operating at 143MHz clock frequency. Ideal for industrial applications, it features synchronous operation, self-refresh capability, and a thin profile grid array package.

FOUR BANK PAGE BURST

5.4 ns

143 MHz

COMMON/SEPARATE

1,2,4,8

S-PBGA-B54

8 mm

536870912 bit

SYNCHRONOUS DRAM

16

1

1

54

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA54,9X9,32

SQUARE

GRID ARRAY, THIN PROFILE, FINE PITCH

NOT SPECIFIED

8192

1.2 mm

YES

1,2,4,8,FP

.008 Amp

3 V

120 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

NOT SPECIFIED

8 mm

AS4C32M16SB-7BIN by Alliance Memory

AS4C32M16SB-7BIN

Alliance Memory

Alliance Memory's AS4C32M16SB-7BIN is a 32MX16 DRAM with 3.3V supply, operating at 143MHz clock frequency. Ideal for industrial applications, it features synchronous operation, self-refresh capability, and a thin profile grid array package.

FOUR BANK PAGE BURST

5.4 ns

143 MHz

COMMON/SEPARATE

1,2,4,8

S-PBGA-B54

8 mm

536870912 bit

SYNCHRONOUS DRAM

16

1

1

54

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA54,9X9,32

SQUARE

GRID ARRAY, THIN PROFILE, FINE PITCH

NOT SPECIFIED

8192

1.2 mm

YES

1,2,4,8,FP

.008 Amp

3 V

120 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

NOT SPECIFIED

8 mm

MT53E512M64D2HJ-046WT:B by Micron Technology

MT53E512M64D2HJ-046WT:B

Micron Technology

LPDDR4 DRAM; No. of Terminals: 556; Package Code: TFBGA; Package Shape: SQUARE; Terminal Form: BALL; Technology: CMOS;

MULTI BANK PAGE BURST

SELF REFRESH; IT ALSO REQUIRES 1.8V NOM

2136.7 MHz

COMMON

16,32

S-PBGA-B556

12.4 mm

34359738368 bit

LPDDR4 DRAM

64

1

1

556

536870912 words

512M

SYNCHRONOUS

85 Cel

-25 Cel

512MX64

PLASTIC/EPOXY

TFBGA

BGA556,29X29,16

SQUARE

GRID ARRAY, THIN PROFILE, FINE PITCH

1.1 mm

YES

16,32

1.17 V

1.06 V

1.1

YES

CMOS

BALL

.4 mm

BOTTOM

12.4 mm

S80KS2564GACHV040 by Infineon Technologies

S80KS2564GACHV040

Infineon Technologies

Infineon's S80KS2564GACHV040 is a 16MX16 DRAM with 1.8V supply voltage, operating at up to 200MHz clock frequency. Ideal for applications requiring high-speed synchronous memory with common I/O type and self-refresh capability in a compact grid array package.

35 ns

SELF REFRESH

200 MHz

COMMON

S-PBGA-B49

8 mm

268435456 bit

HYPERRAM

16

3

1

1

49

16777216 words

16M

SYNCHRONOUS

105 Cel

-40 Cel

16MX16

PLASTIC/EPOXY

VBGA

BGA49,7X7,20

SQUARE

GRID ARRAY, VERY THIN PROFILE

1 mm

YES

.00155 Amp

22 mA

2 V

1.7 V

1.8

YES

CMOS

BALL

1 mm

BOTTOM

8 mm

S80KS2564GACHI040 by Infineon Technologies

S80KS2564GACHI040

Infineon Technologies

HYPERRAM; No. of Terminals: 49; Package Code: VBGA; Package Shape: SQUARE; Maximum Standby Current: .0012 Amp; Maximum Operating Temperature: 85 Cel;

35 ns

SELF REFRESH

200 MHz

COMMON

S-PBGA-B49

8 mm

268435456 bit

HYPERRAM

16

3

1

1

49

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX16

PLASTIC/EPOXY

VBGA

BGA49,7X7,20

SQUARE

GRID ARRAY, VERY THIN PROFILE

1 mm

YES

.0012 Amp

22 mA

2 V

1.7 V

1.8

YES

CMOS

BALL

1 mm

BOTTOM

8 mm

MT53E768M64D4HJ-046AAT:A by Micron Technology

MT53E768M64D4HJ-046AAT:A

Micron Technology

LPDDR4 DRAM; No. of Terminals: 556; Package Code: TFBGA; Package Shape: SQUARE; Maximum Standby Current: .0032 Amp; Memory Density: 51539607552 bit;

MULTI BANK PAGE BURST

3.5 ns

2133 MHz

COMMON

16,32

S-PBGA-B556

12.4 mm

51539607552 bit

LPDDR4 DRAM

64

1

1

556

805306368 words

768M

SYNCHRONOUS

105 Cel

-40 Cel

768MX64

3-STATE

PLASTIC/EPOXY

TFBGA

BGA556,29X29,16

SQUARE

GRID ARRAY, THIN PROFILE, FINE PITCH

1.1 mm

YES

16,32

.0032 Amp

320 mA

1.17 V

1.06 V

1.1

YES

CMOS

BALL

.4 mm

BOTTOM

12.4 mm

MT53E768M64D4HJ-046AIT:A by Micron Technology

MT53E768M64D4HJ-046AIT:A

Micron Technology

LPDDR4 DRAM; No. of Terminals: 556; Package Code: TFBGA; Package Shape: SQUARE; Minimum Operating Temperature: -40 Cel; Package Body Material: PLASTIC/EPOXY;

MULTI BANK PAGE BURST

3.5 ns

2133 MHz

COMMON

16,32

S-PBGA-B556

12.4 mm

51539607552 bit

LPDDR4 DRAM

64

1

1

556

805306368 words

768M

SYNCHRONOUS

95 Cel

-40 Cel

768MX64

3-STATE

PLASTIC/EPOXY

TFBGA

BGA556,29X29,16

SQUARE

GRID ARRAY, THIN PROFILE, FINE PITCH

1.1 mm

YES

16,32

.0032 Amp

320 mA

1.17 V

1.06 V

1.1

YES

CMOS

BALL

.4 mm

BOTTOM

12.4 mm

MT53E512M64D4HJ-046AAT:D by Micron Technology

MT53E512M64D4HJ-046AAT:D

Micron Technology

LPDDR4 DRAM; No. of Terminals: 556; Package Code: TFBGA; Package Shape: SQUARE; Sequential Burst Length: 16,32; Output Characteristics: 3-STATE;

MULTI BANK PAGE BURST

3.5 ns

SELF REFRESH; IT ALSO REQUIRES 1.8V NOM

2133 MHz

COMMON

16,32

S-PBGA-B556

12.4 mm

34359738368 bit

LPDDR4 DRAM

64

1

1

556

536870912 words

512M

SYNCHRONOUS

105 Cel

-40 Cel

512MX64

3-STATE

PLASTIC/EPOXY

TFBGA

BGA556,29X29,16

SQUARE

GRID ARRAY, THIN PROFILE, FINE PITCH

1.1 mm

YES

16,32

.0036 Amp

390 mA

1.17 V

1.06 V

1.1

YES

CMOS

BALL

.4 mm

BOTTOM

12.4 mm

MT53E512M64D4HJ-046AIT:D by Micron Technology

MT53E512M64D4HJ-046AIT:D

Micron Technology

LPDDR4 DRAM; No. of Terminals: 556; Package Code: TFBGA; Package Shape: SQUARE; Maximum Clock Frequency (fCLK): 2133 MHz; Output Characteristics: 3-STATE;

MULTI BANK PAGE BURST

3.5 ns

SELF REFRESH; IT ALSO REQUIRES 1.8V NOM

2133 MHz

COMMON

16,32

S-PBGA-B556

12.4 mm

34359738368 bit

LPDDR4 DRAM

64

1

1

556

536870912 words

512M

SYNCHRONOUS

95 Cel

-40 Cel

512MX64

3-STATE

PLASTIC/EPOXY

TFBGA

BGA556,29X29,16

SQUARE

GRID ARRAY, THIN PROFILE, FINE PITCH

1.1 mm

YES

16,32

.0036 Amp

390 mA

1.17 V

1.06 V

1.1

YES

CMOS

BALL

.4 mm

BOTTOM

12.4 mm

MT53E512M64D4NK-046WT:D by Micron Technology

MT53E512M64D4NK-046WT:D

Micron Technology

LPDDR4 DRAM; No. of Terminals: 366; Package Code: VFBGA; Package Shape: SQUARE; Maximum Supply Current: 360 mA; Additional Features: SELF REFRESH; IT ALSO REQUIRES 1.8V NOM;

MULTI BANK PAGE BURST

3.5 ns

SELF REFRESH; IT ALSO REQUIRES 1.8V NOM

2133 MHz

COMMON

16,32

S-PBGA-B366

15 mm

34359738368 bit

LPDDR4 DRAM

64

1

1

366

536870912 words

512M

SYNCHRONOUS

85 Cel

-25 Cel

512MX64

3-STATE

PLASTIC/EPOXY

VFBGA

BGA366,29X29,20

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.7 mm

YES

16,32

360 mA

1.17 V

1.06 V

1.1

YES

CMOS

BALL

.5 mm

BOTTOM

15 mm

MT53E512M64D4NK-053WT:D by Micron Technology

MT53E512M64D4NK-053WT:D

Micron Technology

Micron Technology's MT53E512M64D4NK-053WT:D is a LPDDR4 DRAM with 512MX64 organization, operating at 1866 MHz. It features a very thin profile, fine pitch grid array package style and supports multi-bank page burst access mode. Ideal for applications requiring high-speed memory performance in compact devices.

MULTI BANK PAGE BURST

3.5 ns

SELF REFRESH; IT ALSO REQUIRES 1.8V NOM

1866 MHz

COMMON

16,32

S-PBGA-B366

15 mm

34359738368 bit

LPDDR4 DRAM

64

1

1

366

536870912 words

512M

SYNCHRONOUS

85 Cel

-25 Cel

512MX64

3-STATE

PLASTIC/EPOXY

VFBGA

BGA366,29X29,20

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.7 mm

YES

16,32

300 mA

1.17 V

1.06 V

1.1

YES

CMOS

BALL

.5 mm

BOTTOM

15 mm