Loading...

SQUARE DRAM 241

DRAM
Part# Info Specs
Part RoHS Manufacturer Description Access Mode Maximum Access Time Additional Features Alternate Memory Width Maximum Clock Frequency (fCLK) Input/Output Type Interleaved Burst Length JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Mixed Memory Type Moisture Sensitivity Level (MSL) Nominal Negative Supply Voltage No. of Functions No. of Ports No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Qualification Refresh Cycles Reverse Pinout Screening Level Maximum Seated Height Self Refresh Sequential Burst Length Maximum Standby Current Minimum Standby Voltage Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Width
AS4C4M16SA-6TINTR by Alliance Memory

AS4C4M16SA-6TINTR

Alliance Memory

Alliance Memory's AS4C4M16SA-6TINTR is a 3.3V, 4MX16 Synchronous DRAM with 85°C max temp. Ideal for industrial applications, it features self-refresh mode, 5.4ns access time, and thin profile grid array package.

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

S-PBGA-B54

e3

8 mm

67108864 bit

SYNCHRONOUS DRAM

16

3

1

1

54

4194304 words

4M

SYNCHRONOUS

85 Cel

-40 Cel

4MX16

PLASTIC/EPOXY

TFBGA

SQUARE

GRID ARRAY, THIN PROFILE, FINE PITCH

1.2 mm

YES

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

Tin (Sn)

BALL

.8 mm

BOTTOM

8 mm

MT44K32M36RB-107EIT:A by Micron Technology

MT44K32M36RB-107EIT:A

Micron Technology

DDR DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 168; Package Code: TBGA; Package Shape: SQUARE; Maximum Supply Voltage (Vsup): 1.42 V;

MULTI BANK PAGE BURST

AUTO REFRESH

S-PBGA-B168

13.5 mm

1207959552 bit

DDR DRAM

36

1

1

168

33554432 words

32M

SYNCHRONOUS

95 Cel

-40 Cel

32MX36

PLASTIC/EPOXY

TBGA

SQUARE

GRID ARRAY, THIN PROFILE

1.2 mm

1.42 V

1.28 V

1.35

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

13.5 mm

MT44K16M36RB-093EIT:B by Micron Technology

MT44K16M36RB-093EIT:B

Micron Technology

DDR DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 168; Package Code: TBGA; Package Shape: SQUARE; Additional Features: AUTO REFRESH;

MULTI BANK PAGE BURST

AUTO REFRESH

S-PBGA-B168

13.5 mm

603979776 bit

DDR DRAM

36

1

1

168

16777216 words

16M

SYNCHRONOUS

95 Cel

-40 Cel

16MX36

PLASTIC/EPOXY

TBGA

SQUARE

GRID ARRAY, THIN PROFILE

1.2 mm

1.42 V

1.28 V

1.35

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

13.5 mm

MT44K16M36RB-093F:B by Micron Technology

MT44K16M36RB-093F:B

Micron Technology

Micron Technology's MT44K16M36RB-093F:B is a DDR DRAM with 16MX36 organization, operating at 1.35V. It features synchronous operation, multi-bank page burst access mode, and a memory density of 603979776 bits. Ideal for applications requiring high-speed data processing in compact devices.

MULTI BANK PAGE BURST

AUTO REFRESH

S-PBGA-B168

e1

13.5 mm

603979776 bit

DDR DRAM

36

1

1

168

16777216 words

16M

SYNCHRONOUS

95 Cel

0 Cel

16MX36

PLASTIC/EPOXY

TBGA

SQUARE

GRID ARRAY, THIN PROFILE

260

1.2 mm

1.42 V

1.28 V

1.35

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

13.5 mm

MT44K16M36RB-107E:B by Micron Technology

MT44K16M36RB-107E:B

Micron Technology

DDR DRAM; Temperature Grade: OTHER; No. of Terminals: 168; Package Code: TBGA; Package Shape: SQUARE; Memory Density: 603979776 bit;

MULTI BANK PAGE BURST

AUTO REFRESH

S-PBGA-B168

13.5 mm

603979776 bit

DDR DRAM

36

1

1

168

16777216 words

16M

SYNCHRONOUS

95 Cel

0 Cel

16MX36

PLASTIC/EPOXY

TBGA

SQUARE

GRID ARRAY, THIN PROFILE

1.2 mm

1.42 V

1.28 V

1.35

YES

CMOS

OTHER

BALL

1 mm

BOTTOM

13.5 mm

MT44K16M36RB-107EIT:B by Micron Technology

MT44K16M36RB-107EIT:B

Micron Technology

DDR DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 168; Package Code: TBGA; Package Shape: SQUARE; Surface Mount: YES;

MULTI BANK PAGE BURST

AUTO REFRESH

S-PBGA-B168

13.5 mm

603979776 bit

DDR DRAM

36

1

1

168

16777216 words

16M

SYNCHRONOUS

95 Cel

-40 Cel

16MX36

PLASTIC/EPOXY

TBGA

SQUARE

GRID ARRAY, THIN PROFILE

1.2 mm

1.42 V

1.28 V

1.35

YES

CMOS

INDUSTRIAL

BALL

1 mm

BOTTOM

13.5 mm

MT44K32M18RB-093E:B by Micron Technology

MT44K32M18RB-093E:B

Micron Technology

DDR DRAM; Temperature Grade: OTHER; No. of Terminals: 168; Package Code: TBGA; Package Shape: SQUARE; Minimum Operating Temperature: 0 Cel;

MULTI BANK PAGE BURST

AUTO REFRESH

S-PBGA-B168

13.5 mm

603979776 bit

DDR DRAM

18

1

1

168

33554432 words

32M

SYNCHRONOUS

95 Cel

0 Cel

32MX18

PLASTIC/EPOXY

TBGA

SQUARE

GRID ARRAY, THIN PROFILE

1.2 mm

1.42 V

1.28 V

1.35

YES

CMOS

OTHER

BALL

1 mm

BOTTOM

13.5 mm

MT44K32M18RB-093F:B by Micron Technology

MT44K32M18RB-093F:B

Micron Technology

DDR DRAM; Temperature Grade: OTHER; No. of Terminals: 168; Package Code: TBGA; Package Shape: SQUARE; Technology: CMOS;

MULTI BANK PAGE BURST

AUTO REFRESH

S-PBGA-B168

13.5 mm

603979776 bit

DDR DRAM

18

1

1

168

33554432 words

32M

SYNCHRONOUS

95 Cel

0 Cel

32MX18

PLASTIC/EPOXY

TBGA

SQUARE

GRID ARRAY, THIN PROFILE

1.2 mm

1.42 V

1.28 V

1.35

YES

CMOS

OTHER

BALL

1 mm

BOTTOM

13.5 mm

MT44K32M18RB-107E:B by Micron Technology

MT44K32M18RB-107E:B

Micron Technology

DDR DRAM; Temperature Grade: OTHER; No. of Terminals: 168; Package Code: TBGA; Package Shape: SQUARE; No. of Ports: 1;

MULTI BANK PAGE BURST

AUTO REFRESH

S-PBGA-B168

13.5 mm

603979776 bit

DDR DRAM

18

1

1

168

33554432 words

32M

SYNCHRONOUS

95 Cel

0 Cel

32MX18

PLASTIC/EPOXY

TBGA

SQUARE

GRID ARRAY, THIN PROFILE

1.2 mm

1.42 V

1.28 V

1.35

YES

CMOS

OTHER

BALL

1 mm

BOTTOM

13.5 mm

MT44K16M36RB-093E:BTR by Micron Technology

MT44K16M36RB-093E:BTR

Micron Technology

DDR3 DRAM; Temperature Grade: OTHER; No. of Terminals: 168; Package Code: TBGA; Package Shape: SQUARE; Package Equivalence Code: BGA168,13X13,40;

MULTI BANK PAGE BURST

1075 MHz

COMMON

2,4

S-PBGA-B168

e1

13.5 mm

603979776 bit

DDR3 DRAM

36

1

1

168

16777216 words

16M

SYNCHRONOUS

100 Cel

0 Cel

16MX36

3-STATE

PLASTIC/EPOXY

TBGA

BGA168,13X13,40

SQUARE

GRID ARRAY, THIN PROFILE

1.2 mm

YES

2,4

.225 Amp

2840 mA

1.42 V

1.28 V

1.35

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

1 mm

BOTTOM

13.5 mm

MT44K16M36RB-093EIT:BTR by Micron Technology

MT44K16M36RB-093EIT:BTR

Micron Technology

DDR3 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 168; Package Code: TBGA; Package Shape: SQUARE; Interleaved Burst Length: 2,4;

MULTI BANK PAGE BURST

1075 MHz

COMMON

2,4

S-PBGA-B168

e1

13.5 mm

603979776 bit

DDR3 DRAM

36

1

1

168

16777216 words

16M

SYNCHRONOUS

100 Cel

-40 Cel

16MX36

3-STATE

PLASTIC/EPOXY

TBGA

BGA168,13X13,40

SQUARE

GRID ARRAY, THIN PROFILE

260

1.2 mm

YES

2,4

.225 Amp

2840 mA

1.42 V

1.28 V

1.35

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

13.5 mm

MT44K16M36RB-093F:BTR by Micron Technology

MT44K16M36RB-093F:BTR

Micron Technology

RLDRAM3; No. of Terminals: 168; Package Code: TBGA; Package Shape: SQUARE; Maximum Clock Frequency (fCLK): 1075.2 MHz; No. of Functions: 1;

MULTI BANK PAGE BURST

AUTO REFRESH

1075.2 MHz

COMMON

2,4,8

S-PBGA-B168

e1

13.5 mm

603979776 bit

RLDRAM3

36

1

1

168

16777216 words

16M

SYNCHRONOUS

95 Cel

0 Cel

16MX36

PLASTIC/EPOXY

TBGA

BGA168,13X13,40

SQUARE

GRID ARRAY, THIN PROFILE

260

1.2 mm

NO

2,4,8

.225 Amp

2840 mA

1.45 V

1.28 V

1.35

YES

CMOS

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

13.5 mm

MT44K16M36RB-107E:BTR by Micron Technology

MT44K16M36RB-107E:BTR

Micron Technology

RLDRAM3; No. of Terminals: 168; Package Code: TBGA; Package Shape: SQUARE; Organization: 16MX36; Width: 13.5 mm;

MULTI BANK PAGE BURST

AUTO REFRESH

934.5 MHz

COMMON

2,4,8

S-PBGA-B168

e1

13.5 mm

603979776 bit

RLDRAM3

36

1

1

168

16777216 words

16M

SYNCHRONOUS

95 Cel

0 Cel

16MX36

PLASTIC/EPOXY

TBGA

BGA168,13X13,40

SQUARE

GRID ARRAY, THIN PROFILE

260

1.2 mm

NO

2,4,8

.225 Amp

2665 mA

1.45 V

1.28 V

1.35

YES

CMOS

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

13.5 mm

MT44K32M18RB-093E:BTR by Micron Technology

MT44K32M18RB-093E:BTR

Micron Technology

RLDRAM3; No. of Terminals: 168; Package Code: TBGA; Package Shape: SQUARE; Minimum Supply Voltage (Vsup): 1.28 V; Maximum Clock Frequency (fCLK): 1075.2 MHz;

MULTI BANK PAGE BURST

AUTO REFRESH

1075.2 MHz

COMMON

2,4,8

S-PBGA-B168

e1

13.5 mm

603979776 bit

RLDRAM3

18

1

1

168

33554432 words

32M

SYNCHRONOUS

95 Cel

0 Cel

32MX18

PLASTIC/EPOXY

TBGA

BGA168,13X13,40

SQUARE

GRID ARRAY, THIN PROFILE

260

1.2 mm

NO

2,4,8

.225 Amp

2620 mA

1.45 V

1.28 V

1.35

YES

CMOS

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

13.5 mm

MT44K32M18RB-107E:BTR by Micron Technology

MT44K32M18RB-107E:BTR

Micron Technology

RLDRAM3; No. of Terminals: 168; Package Code: TBGA; Package Shape: SQUARE; JESD-609 Code: e1; Length: 13.5 mm;

MULTI BANK PAGE BURST

AUTO REFRESH

934.5 MHz

COMMON

2,4,8

S-PBGA-B168

e1

13.5 mm

603979776 bit

RLDRAM3

18

1

1

168

33554432 words

32M

SYNCHRONOUS

95 Cel

0 Cel

32MX18

PLASTIC/EPOXY

TBGA

BGA168,13X13,40

SQUARE

GRID ARRAY, THIN PROFILE

260

1.2 mm

NO

2,4,8

.225 Amp

2565 mA

1.45 V

1.28 V

1.35

YES

CMOS

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

13.5 mm

MT44K32M18RB-107EIT:BTR by Micron Technology

MT44K32M18RB-107EIT:BTR

Micron Technology

RLDRAM3; No. of Terminals: 168; Package Code: TBGA; Package Shape: SQUARE; Maximum Supply Current: 2565 mA; Package Style (Meter): GRID ARRAY, THIN PROFILE;

MULTI BANK PAGE BURST

AUTO REFRESH

934.5 MHz

COMMON

2,4,8

S-PBGA-B168

13.5 mm

603979776 bit

RLDRAM3

18

1

1

168

33554432 words

32M

SYNCHRONOUS

95 Cel

-40 Cel

32MX18

PLASTIC/EPOXY

TBGA

BGA168,13X13,40

SQUARE

GRID ARRAY, THIN PROFILE

1.2 mm

NO

2,4,8

.225 Amp

2565 mA

1.45 V

1.28 V

1.35

YES

CMOS

BALL

1 mm

BOTTOM

13.5 mm

MT44K32M18RB-125E:ATR by Micron Technology

MT44K32M18RB-125E:ATR

Micron Technology

RLDRAM3; No. of Terminals: 168; Package Code: TBGA; Package Shape: SQUARE; Terminal Form: BALL; Minimum Operating Temperature: 0 Cel;

MULTI BANK PAGE BURST

AUTO REFRESH

800 MHz

COMMON

2,4,8

S-PBGA-B168

13.5 mm

603979776 bit

RLDRAM3

18

1

1

168

33554432 words

32M

SYNCHRONOUS

95 Cel

0 Cel

32MX18

PLASTIC/EPOXY

TBGA

BGA168,13X13,40

SQUARE

GRID ARRAY, THIN PROFILE

NOT SPECIFIED

1.2 mm

NO

2,4,8

1.45 V

1.28 V

1.35

YES

CMOS

BALL

1 mm

BOTTOM

NOT SPECIFIED

13.5 mm

MT44K32M36RB-093E:ATR by Micron Technology

MT44K32M36RB-093E:ATR

Micron Technology

RLDRAM3; No. of Terminals: 168; Package Code: TBGA; Package Shape: SQUARE; Minimum Supply Voltage (Vsup): 1.28 V; Organization: 32MX36;

MULTI BANK PAGE BURST

AUTO REFRESH

1075.2 MHz

COMMON

2,4,8

S-PBGA-B168

e1

13.5 mm

1207959552 bit

RLDRAM3

36

1

1

168

33554432 words

32M

SYNCHRONOUS

95 Cel

0 Cel

32MX36

PLASTIC/EPOXY

TBGA

BGA168,13X13,40

SQUARE

GRID ARRAY, THIN PROFILE

260

1.2 mm

NO

2,4,8

.225 Amp

1140 mA

1.45 V

1.28 V

1.35

YES

CMOS

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

13.5 mm

MT44K32M36RB-107E:ATR by Micron Technology

MT44K32M36RB-107E:ATR

Micron Technology

RLDRAM3; No. of Terminals: 168; Package Code: TBGA; Package Shape: SQUARE; Memory Width: 36; Memory Density: 1207959552 bit;

MULTI BANK PAGE BURST

AUTO REFRESH

934.5 MHz

COMMON

2,4,8

S-PBGA-B168

e1

13.5 mm

1207959552 bit

RLDRAM3

36

1

1

168

33554432 words

32M

SYNCHRONOUS

95 Cel

0 Cel

32MX36

PLASTIC/EPOXY

TBGA

BGA168,13X13,40

SQUARE

GRID ARRAY, THIN PROFILE

260

1.2 mm

NO

2,4,8

.225 Amp

1070 mA

1.45 V

1.28 V

1.35

YES

CMOS

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

13.5 mm

MT44K32M36RB-107EIT:ATR by Micron Technology

MT44K32M36RB-107EIT:ATR

Micron Technology

RLDRAM3; No. of Terminals: 168; Package Code: TBGA; Package Shape: SQUARE; Sequential Burst Length: 2,4,8; Minimum Operating Temperature: -40 Cel;

MULTI BANK PAGE BURST

AUTO REFRESH

934.5 MHz

COMMON

2,4,8

S-PBGA-B168

13.5 mm

1207959552 bit

RLDRAM3

36

1

1

168

33554432 words

32M

SYNCHRONOUS

95 Cel

-40 Cel

32MX36

PLASTIC/EPOXY

TBGA

BGA168,13X13,40

SQUARE

GRID ARRAY, THIN PROFILE

1.2 mm

NO

2,4,8

.225 Amp

1070 mA

1.45 V

1.28 V

1.35

YES

CMOS

BALL

1 mm

BOTTOM

13.5 mm

MT46H128M32L2KQ-48IT:C by Micron Technology

MT46H128M32L2KQ-48IT:C

Micron Technology

LPDDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 168; Package Code: VFBGA; Package Shape: SQUARE; Minimum Supply Voltage (Vsup): 1.7 V;

FOUR BANK PAGE BURST

4.8 ns

AUTO/SELF REFRESH

S-PBGA-B168

e1

12 mm

4294967296 bit

LPDDR1 DRAM

32

1

1

168

134217728 words

128M

SYNCHRONOUS

85 Cel

-40 Cel

128MX32

PLASTIC/EPOXY

VFBGA

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.75 mm

YES

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.5 mm

BOTTOM

12 mm

MT46H128M32L2KQ-48WT:C by Micron Technology

MT46H128M32L2KQ-48WT:C

Micron Technology

LPDDR1 DRAM; Temperature Grade: OTHER; No. of Terminals: 168; Package Code: VFBGA; Package Shape: SQUARE; Technology: CMOS;

FOUR BANK PAGE BURST

4.8 ns

AUTO/SELF REFRESH

S-PBGA-B168

e1

12 mm

4294967296 bit

LPDDR1 DRAM

32

1

1

168

134217728 words

128M

SYNCHRONOUS

85 Cel

-25 Cel

128MX32

PLASTIC/EPOXY

VFBGA

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.75 mm

YES

1.95 V

1.7 V

1.8

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

.5 mm

BOTTOM

12 mm

MT46H64M32LFKQ-5IT:C by Micron Technology

MT46H64M32LFKQ-5IT:C

Micron Technology

LPDDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 168; Package Code: VFBGA; Package Shape: SQUARE; No. of Words Code: 64M;

FOUR BANK PAGE BURST

5 ns

AUTO/SELF REFRESH

S-PBGA-B168

12 mm

2147483648 bit

LPDDR1 DRAM

32

1

1

168

67108864 words

64M

SYNCHRONOUS

85 Cel

-40 Cel

64MX32

PLASTIC/EPOXY

VFBGA

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.75 mm

YES

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

.5 mm

BOTTOM

12 mm

IS42SM16200D-6BLI by Integrated Silicon Solution

IS42SM16200D-6BLI

Integrated Silicon Solution

SYNCHRONOUS DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 54; Package Code: TFBGA; Package Shape: SQUARE; Package Style (Meter): GRID ARRAY, THIN PROFILE, FINE PITCH;

DUAL BANK PAGE BURST

5.5 ns

AUTO/SELF REFRESH

S-PBGA-B54

e1

8 mm

33554432 bit

SYNCHRONOUS DRAM

16

3

1

1

54

2097152 words

2M

SYNCHRONOUS

85 Cel

-40 Cel

2MX16

PLASTIC/EPOXY

TFBGA

SQUARE

GRID ARRAY, THIN PROFILE, FINE PITCH

1.2 mm

YES

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

8 mm

IS42VM16200D-6BLI by Integrated Silicon Solution

IS42VM16200D-6BLI

Integrated Silicon Solution

IS42VM16200D-6BLI by Integrated Silicon Solution is a 2MX16 Synchronous DRAM with 16-bit memory width. Operating at 1.8V, it offers dual bank page burst access mode and self-refresh capability. Ideal for industrial applications requiring high memory density and fast access times up to 5.5 ns.

DUAL BANK PAGE BURST

5.5 ns

AUTO/SELF REFRESH

S-PBGA-B54

e1

8 mm

33554432 bit

SYNCHRONOUS DRAM

16

3

1

1

54

2097152 words

2M

SYNCHRONOUS

85 Cel

-40 Cel

2MX16

PLASTIC/EPOXY

TFBGA

SQUARE

GRID ARRAY, THIN PROFILE, FINE PITCH

1.2 mm

YES

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

8 mm

IS42VM16200D-75BLI by Integrated Silicon Solution

IS42VM16200D-75BLI

Integrated Silicon Solution

IS42VM16200D-75BLI by Integrated Silicon Solution is a 2MX16 Synchronous DRAM with 16-bit memory width. It operates at 1.8V, has a max access time of 6ns, and features dual bank page burst access mode. Ideal for industrial applications requiring high-speed and reliable memory performance in compact spaces.

DUAL BANK PAGE BURST

6 ns

AUTO/SELF REFRESH

S-PBGA-B54

e1

8 mm

33554432 bit

SYNCHRONOUS DRAM

16

3

1

1

54

2097152 words

2M

SYNCHRONOUS

85 Cel

-40 Cel

2MX16

PLASTIC/EPOXY

TFBGA

SQUARE

GRID ARRAY, THIN PROFILE, FINE PITCH

1.2 mm

YES

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

8 mm

MT46H256M32L4LE-48WT:C by Micron Technology

MT46H256M32L4LE-48WT:C

Micron Technology

Micron Technology's MT46H256M32L4LE-48WT:C is a 256MX32 LPDDR1 DRAM with 32-bit memory width. It operates synchronously at 1.8V, featuring self-refresh and four-bank page burst access mode. Suitable for applications requiring high memory density, fast access time of 5ns, and operating temperatures b/w -25 to 85°C.

FOUR BANK PAGE BURST

5 ns

AUTO/SELF REFRESH

S-PBGA-B168

e1

12 mm

8589934592 bit

LPDDR1 DRAM

32

1

1

168

268435456 words

256M

SYNCHRONOUS

85 Cel

-25 Cel

256MX32

PLASTIC/EPOXY

VFBGA

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1 mm

YES

1.95 V

1.7 V

1.8

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

.5 mm

BOTTOM

12 mm

MT44K32M36RB-083F:A by Micron Technology

MT44K32M36RB-083F:A

Micron Technology

DDR DRAM; No. of Terminals: 168; Package Code: TBGA; Package Shape: SQUARE; No. of Ports: 1; Nominal Supply Voltage / Vsup (V): 1.35;

MULTI BANK PAGE BURST

AUTO REFRESH

S-PBGA-B168

13.5 mm

1207959552 bit

DDR DRAM

36

1

1

168

33554432 words

32M

SYNCHRONOUS

32MX36

PLASTIC/EPOXY

TBGA

SQUARE

GRID ARRAY, THIN PROFILE

1.2 mm

1.42 V

1.28 V

1.35

YES

CMOS

BALL

1 mm

BOTTOM

13.5 mm

MT44K32M36RB-093E:A by Micron Technology

MT44K32M36RB-093E:A

Micron Technology

Micron Technology's MT44K32M36RB-093E:A is a DDR DRAM with 32MX36 organization, operating at 1.35V. It features synchronous mode, multi-bank page burst access, and thin profile grid array package style. Ideal for high-density memory applications requiring fast data processing and low power consumption.

MULTI BANK PAGE BURST

AUTO REFRESH

S-PBGA-B168

e1

13.5 mm

1207959552 bit

DDR DRAM

36

1

1

168

33554432 words

32M

SYNCHRONOUS

32MX36

PLASTIC/EPOXY

TBGA

SQUARE

GRID ARRAY, THIN PROFILE

260

1.2 mm

1.42 V

1.28 V

1.35

YES

CMOS

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

13.5 mm

MT44K32M36RB-093F:A by Micron Technology

MT44K32M36RB-093F:A

Micron Technology

DDR DRAM; No. of Terminals: 168; Package Code: TBGA; Package Shape: SQUARE; Nominal Supply Voltage / Vsup (V): 1.35; Terminal Position: BOTTOM;

MULTI BANK PAGE BURST

AUTO REFRESH

S-PBGA-B168

13.5 mm

1207959552 bit

DDR DRAM

36

1

1

168

33554432 words

32M

SYNCHRONOUS

32MX36

PLASTIC/EPOXY

TBGA

SQUARE

GRID ARRAY, THIN PROFILE

1.2 mm

1.42 V

1.28 V

1.35

YES

CMOS

BALL

1 mm

BOTTOM

13.5 mm

MT44K32M36RB-107E:A by Micron Technology

MT44K32M36RB-107E:A

Micron Technology

DDR DRAM; No. of Terminals: 168; Package Code: TBGA; Package Shape: SQUARE; Terminal Form: BALL; Maximum Seated Height: 1.2 mm;

MULTI BANK PAGE BURST

AUTO REFRESH

S-PBGA-B168

e1

13.5 mm

1207959552 bit

DDR DRAM

36

1

1

168

33554432 words

32M

SYNCHRONOUS

32MX36

PLASTIC/EPOXY

TBGA

SQUARE

GRID ARRAY, THIN PROFILE

260

1.2 mm

1.42 V

1.28 V

1.35

YES

CMOS

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

13.5 mm

MT44K64M18RB-083F:A by Micron Technology

MT44K64M18RB-083F:A

Micron Technology

DDR DRAM; No. of Terminals: 168; Package Code: TBGA; Package Shape: SQUARE; No. of Words: 67108864 words; Minimum Supply Voltage (Vsup): 1.28 V;

MULTI BANK PAGE BURST

AUTO REFRESH

S-PBGA-B168

e1

13.5 mm

1207959552 bit

DDR DRAM

18

1

1

168

67108864 words

64M

SYNCHRONOUS

64MX18

PLASTIC/EPOXY

TBGA

SQUARE

GRID ARRAY, THIN PROFILE

260

1.2 mm

1.42 V

1.28 V

1.35

YES

CMOS

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

1 mm

BOTTOM

30

13.5 mm

MT44K64M18RB-093E:A by Micron Technology

MT44K64M18RB-093E:A

Micron Technology

DDR DRAM; No. of Terminals: 168; Package Code: TBGA; Package Shape: SQUARE; Package Body Material: PLASTIC/EPOXY; Nominal Supply Voltage / Vsup (V): 1.35;

MULTI BANK PAGE BURST

AUTO REFRESH

S-PBGA-B168

e1

13.5 mm

1207959552 bit

DDR DRAM

18

1

1

168

67108864 words

64M

SYNCHRONOUS

64MX18

PLASTIC/EPOXY

TBGA

SQUARE

GRID ARRAY, THIN PROFILE

260

1.2 mm

1.42 V

1.28 V

1.35

YES

CMOS

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

13.5 mm

MT44K64M18RB-093F:A by Micron Technology

MT44K64M18RB-093F:A

Micron Technology

DDR DRAM; No. of Terminals: 168; Package Code: TBGA; Package Shape: SQUARE; JESD-30 Code: S-PBGA-B168; No. of Words: 67108864 words;

MULTI BANK PAGE BURST

AUTO REFRESH

S-PBGA-B168

13.5 mm

1207959552 bit

DDR DRAM

18

1

1

168

67108864 words

64M

SYNCHRONOUS

64MX18

PLASTIC/EPOXY

TBGA

SQUARE

GRID ARRAY, THIN PROFILE

1.2 mm

1.42 V

1.28 V

1.35

YES

CMOS

BALL

1 mm

BOTTOM

13.5 mm

MT44K64M18RB-107E:A by Micron Technology

MT44K64M18RB-107E:A

Micron Technology

DDR DRAM; No. of Terminals: 168; Package Code: TBGA; Package Shape: SQUARE; Minimum Supply Voltage (Vsup): 1.28 V; JESD-609 Code: e1;

MULTI BANK PAGE BURST

AUTO REFRESH

S-PBGA-B168

e1

13.5 mm

1207959552 bit

DDR DRAM

18

1

1

168

67108864 words

64M

SYNCHRONOUS

64MX18

PLASTIC/EPOXY

TBGA

SQUARE

GRID ARRAY, THIN PROFILE

260

1.2 mm

1.42 V

1.28 V

1.35

YES

CMOS

TIN SILVER COPPER

BALL

1 mm

BOTTOM

30

13.5 mm

EDB5432BEPA-1DAAT-F-D by Micron Technology

EDB5432BEPA-1DAAT-F-D

Micron Technology

LPDDR2 DRAM; No. of Terminals: 168; Package Code: VFBGA; Package Shape: SQUARE; Terminal Pitch: .5 mm; Minimum Supply Voltage (Vsup): 1.14 V;

SINGLE BANK PAGE BURST

SELF REFRESH; IT ALSO REQUIRES 1.8V NOM

S-PBGA-B168

12 mm

536870912 bit

LPDDR2 DRAM

32

1

1

168

16777216 words

16M

SYNCHRONOUS

16MX32

PLASTIC/EPOXY

VFBGA

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

NOT SPECIFIED

.8 mm

YES

1.3 V

1.14 V

1.2

YES

CMOS

BALL

.5 mm

BOTTOM

NOT SPECIFIED

12 mm

EDB5432BEPA-1DIT-F-D by Micron Technology

EDB5432BEPA-1DIT-F-D

Micron Technology

LPDDR2 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 168; Package Code: VFBGA; Package Shape: SQUARE; No. of Ports: 1;

SINGLE BANK PAGE BURST

SELF REFRESH; IT ALSO REQUIRES 1.8V NOM

S-PBGA-B168

12 mm

536870912 bit

LPDDR2 DRAM

32

1

1

168

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX32

PLASTIC/EPOXY

VFBGA

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.8 mm

YES

1.3 V

1.14 V

1.2

YES

CMOS

INDUSTRIAL

BALL

.5 mm

BOTTOM

12 mm

EDB5432BEPA-1DIT-F-R by Micron Technology

EDB5432BEPA-1DIT-F-R

Micron Technology

LPDDR2 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 168; Package Code: VFBGA; Package Shape: SQUARE; Package Style (Meter): GRID ARRAY, VERY THIN PROFILE, FINE PITCH;

SINGLE BANK PAGE BURST

SELF REFRESH; IT ALSO REQUIRES 1.8V NOM

S-PBGA-B168

12 mm

536870912 bit

LPDDR2 DRAM

32

1

1

168

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX32

PLASTIC/EPOXY

VFBGA

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.8 mm

YES

1.3 V

1.14 V

1.2

YES

CMOS

INDUSTRIAL

BALL

.5 mm

BOTTOM

12 mm

EDF8164A3PK-JD-F-D by Micron Technology

EDF8164A3PK-JD-F-D

Micron Technology

LPDDR3 DRAM; No. of Terminals: 216; Package Code: VFBGA; Package Shape: SQUARE; Access Mode: SINGLE BANK PAGE BURST; Operating Mode: SYNCHRONOUS;

SINGLE BANK PAGE BURST

AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY

S-PBGA-B216

12 mm

8589934592 bit

LPDDR3 DRAM

64

1

1

216

134217728 words

128M

SYNCHRONOUS

128MX64

PLASTIC/EPOXY

VFBGA

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.7 mm

YES

1.3 V

1.14 V

1.2

YES

CMOS

BALL

.4 mm

BOTTOM

12 mm

EDF8164A3PK-JD-F-R by Micron Technology

EDF8164A3PK-JD-F-R

Micron Technology

LPDDR3 DRAM; No. of Terminals: 216; Package Code: VFBGA; Package Shape: SQUARE; Maximum Seated Height: .7 mm; Package Body Material: PLASTIC/EPOXY;

SINGLE BANK PAGE BURST

AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY

S-PBGA-B216

12 mm

8589934592 bit

LPDDR3 DRAM

64

1

1

216

134217728 words

128M

SYNCHRONOUS

128MX64

PLASTIC/EPOXY

VFBGA

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.7 mm

YES

1.3 V

1.14 V

1.2

YES

CMOS

BALL

.4 mm

BOTTOM

12 mm

EDFA164A2PK-GD-F-D by Micron Technology

EDFA164A2PK-GD-F-D

Micron Technology

LPDDR3 DRAM; No. of Terminals: 216; Package Code: VFBGA; Package Shape: SQUARE; JESD-30 Code: S-PBGA-B216; No. of Words: 268435456 words;

DUAL BANK PAGE BURST

AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY

S-PBGA-B216

12 mm

17179869184 bit

LPDDR3 DRAM

64

1

1

216

268435456 words

256M

SYNCHRONOUS

256MX64

PLASTIC/EPOXY

VFBGA

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.8 mm

YES

1.3 V

1.14 V

1.2

YES

CMOS

BALL

.4 mm

BOTTOM

12 mm

EDFA164A2PK-JD-F-D by Micron Technology

EDFA164A2PK-JD-F-D

Micron Technology

LPDDR3 DRAM; No. of Terminals: 216; Package Code: VFBGA; Package Shape: SQUARE; Organization: 256MX64; Memory Width: 64;

DUAL BANK PAGE BURST

AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY

S-PBGA-B216

12 mm

17179869184 bit

LPDDR3 DRAM

64

1

1

216

268435456 words

256M

SYNCHRONOUS

256MX64

PLASTIC/EPOXY

VFBGA

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.8 mm

YES

1.3 V

1.14 V

1.2

YES

CMOS

BALL

.4 mm

BOTTOM

12 mm

MT48LC16M16A2B4-7E:GTR by Micron Technology

MT48LC16M16A2B4-7E:GTR

Micron Technology

Micron Technology's MT48LC16M16A2B4-7E:GTR is a 16MX16 Synchronous DRAM with 16777216 words, 268435456 bit memory density, and operates at 3.3V. It features self-refresh mode, very thin profile package style, and supports four bank page burst access mode. Ideal for commercial applications requiring fast data processing in a compact form factor.

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

S-PBGA-B54

8 mm

268435456 bit

SYNCHRONOUS DRAM

16

1

1

54

16777216 words

16M

SYNCHRONOUS

70 Cel

0 Cel

16MX16

PLASTIC/EPOXY

VFBGA

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

NOT SPECIFIED

1 mm

YES

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

BALL

.8 mm

BOTTOM

NOT SPECIFIED

8 mm

EDB8164B4PK-1D-F-D by Micron Technology

EDB8164B4PK-1D-F-D

Micron Technology

LPDDR2 DRAM; No. of Terminals: 220; Package Code: VFBGA; Package Shape: SQUARE; Memory Density: 8589934592 bit; Terminal Form: BALL;

SINGLE BANK PAGE BURST

AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY

S-PBGA-B220

14 mm

8589934592 bit

LPDDR2 DRAM

64

1

1

220

134217728 words

128M

SYNCHRONOUS

128MX64

PLASTIC/EPOXY

VFBGA

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

NOT SPECIFIED

.7 mm

YES

1.3 V

1.14 V

1.2

YES

CMOS

BALL

.5 mm

BOTTOM

NOT SPECIFIED

14 mm

EDB8164B4PR-1D-F-D by Micron Technology

EDB8164B4PR-1D-F-D

Micron Technology

LPDDR2 DRAM; No. of Terminals: 216; Package Code: VFBGA; Package Shape: SQUARE; Additional Features: AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY; Terminal Position: BOTTOM;

SINGLE BANK PAGE BURST

AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY

S-PBGA-B216

12 mm

8589934592 bit

LPDDR2 DRAM

64

1

1

216

134217728 words

128M

SYNCHRONOUS

128MX64

PLASTIC/EPOXY

VFBGA

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.8 mm

YES

1.3 V

1.14 V

1.2

YES

CMOS

BALL

.4 mm

BOTTOM

12 mm

EDB8164B4PT-1D-F-D by Micron Technology

EDB8164B4PT-1D-F-D

Micron Technology

LPDDR2 DRAM; No. of Terminals: 216; Package Code: VFBGA; Package Shape: SQUARE; Additional Features: AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY; Minimum Supply Voltage (Vsup): 1.14 V;

SINGLE BANK PAGE BURST

AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY

S-PBGA-B216

12 mm

8589934592 bit

LPDDR2 DRAM

64

1

1

216

134217728 words

128M

SYNCHRONOUS

128MX64

PLASTIC/EPOXY

VFBGA

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.8 mm

YES

1.3 V

1.14 V

1.2

YES

CMOS

BALL

.4 mm

BOTTOM

12 mm

EDB8164B4PT-1DAT-F-D by Micron Technology

EDB8164B4PT-1DAT-F-D

Micron Technology

LPDDR2 DRAM; No. of Terminals: 216; Package Code: VFBGA; Package Shape: SQUARE; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Technology: CMOS;

SINGLE BANK PAGE BURST

AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY

S-PBGA-B216

12 mm

8589934592 bit

LPDDR2 DRAM

64

1

1

216

134217728 words

128M

SYNCHRONOUS

128MX64

PLASTIC/EPOXY

VFBGA

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

NOT SPECIFIED

.8 mm

YES

1.3 V

1.14 V

1.2

YES

CMOS

BALL

.4 mm

BOTTOM

NOT SPECIFIED

12 mm

EDB8164B4PT-1DAT-F-R by Micron Technology

EDB8164B4PT-1DAT-F-R

Micron Technology

LPDDR2 DRAM; No. of Terminals: 216; Package Code: VFBGA; Package Shape: SQUARE; No. of Words: 134217728 words; Maximum Seated Height: .8 mm;

SINGLE BANK PAGE BURST

AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY

S-PBGA-B216

12 mm

8589934592 bit

LPDDR2 DRAM

64

1

1

216

134217728 words

128M

SYNCHRONOUS

128MX64

PLASTIC/EPOXY

VFBGA

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.8 mm

YES

1.3 V

1.14 V

1.2

YES

CMOS

BALL

.4 mm

BOTTOM

12 mm