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200 DRAM 146

DRAM
Part# Info Specs
Part RoHS Manufacturer Description Access Mode Maximum Access Time Additional Features Alternate Memory Width Maximum Clock Frequency (fCLK) Input/Output Type Interleaved Burst Length JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Mixed Memory Type Moisture Sensitivity Level (MSL) Nominal Negative Supply Voltage No. of Functions No. of Ports No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Qualification Refresh Cycles Reverse Pinout Screening Level Maximum Seated Height Self Refresh Sequential Burst Length Maximum Standby Current Minimum Standby Voltage Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Width
MT8HTF12864HTZ-667H1 by Micron Technology

MT8HTF12864HTZ-667H1

Micron Technology

DDR DRAM MODULE; Temperature Grade: INDUSTRIAL; No. of Terminals: 200; Package Code: DIMM; Package Shape: RECTANGULAR; Package Style (Meter): MICROELECTRONIC ASSEMBLY;

DUAL BANK PAGE BURST

SELF CONTAINED REFRESH

R-XZMA-N200

e4

67.6 mm

8589934592 bit

DDR DRAM MODULE

64

1

1

200

134217728 words

128M

SYNCHRONOUS

85 Cel

-40 Cel

128MX64

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

Not Qualified

3.8 mm

YES

1.9 V

1.7 V

1.8

NO

CMOS

INDUSTRIAL

GOLD

NO LEAD

ZIG-ZAG

30 mm

MT9VDDT6472HIY-335F2 by Micron Technology

MT9VDDT6472HIY-335F2

Micron Technology

Micron Technology's MT9VDDT6472HIY-335F2 is a 64MX72 DDR DRAM MODULE with 4831838208-bit memory density. Operating at 2.5V, it features synchronous mode and self-refresh capability. Ideal for commercial applications requiring high-speed single bank page burst access.

SINGLE BANK PAGE BURST

AUTO/SELF REFRESH

R-XZMA-N200

e4

67.6 mm

4831838208 bit

DDR DRAM MODULE

72

1

1

200

67108864 words

64M

SYNCHRONOUS

70 Cel

0 Cel

64MX72

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

Not Qualified

3.8 mm

YES

2.7 V

2.3 V

2.5

NO

CMOS

COMMERCIAL

GOLD

NO LEAD

ZIG-ZAG

31.75 mm

MT4HTF6464HZ-667H1 by Micron Technology

MT4HTF6464HZ-667H1

Micron Technology

DDR DRAM MODULE; Temperature Grade: INDUSTRIAL; No. of Terminals: 200; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

SINGLE BANK PAGE BURST

WD-MAX

333 MHz

COMMON

R-XZMA-N200

e3

67.6 mm

4294967296 bit

DDR DRAM MODULE

64

1

1

1

200

67108864 words

64M

SYNCHRONOUS

70 Cel

0 Cel

64MX64

3-STATE

UNSPECIFIED

DIMM

DIMM200,24

RECTANGULAR

MICROELECTRONIC ASSEMBLY

1.8

Not Qualified

8192

30.15 mm

.028 Amp

DRAMs

1400 mA

1.9 V

1.7 V

1.8

NO

CMOS

INDUSTRIAL

MATTE TIN

NO LEAD

.6 mm

ZIG-ZAG

2.45 mm

MT4HTF3264HY-667D3 by Micron Technology

MT4HTF3264HY-667D3

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 200; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

.45 ns

333 MHz

COMMON

R-PDMA-N200

2147483648 bit

DDR DRAM MODULE

64

200

33554432 words

32M

70 Cel

0 Cel

32MX64

3-STATE

PLASTIC/EPOXY

DIMM

DIMM200,24

RECTANGULAR

MICROELECTRONIC ASSEMBLY

1.8

Not Qualified

8192

.028 Amp

DRAMs

1400 mA

1.8

NO

CMOS

COMMERCIAL

NO LEAD

.6 mm

DUAL

MT4VDDT1664HY-335F3 by Micron Technology

MT4VDDT1664HY-335F3

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 200; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

.7 ns

167 MHz

COMMON

R-PDMA-N200

1073741824 bit

DDR DRAM MODULE

64

200

16777216 words

16M

70 Cel

0 Cel

16MX64

3-STATE

PLASTIC/EPOXY

DIMM

DIMM200,24

RECTANGULAR

MICROELECTRONIC ASSEMBLY

2.5

Not Qualified

8192

DRAMs

1760 mA

2.5

NO

CMOS

COMMERCIAL

NO LEAD

.6 mm

DUAL

MT8VDDT6464HDY-335F2 by Micron Technology

MT8VDDT6464HDY-335F2

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 200; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

DUAL BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH; WD-MAX

167 MHz

COMMON

R-XDMA-N200

e4

67.6 mm

536870912 bit

DDR DRAM MODULE

8

1

1

200

67108864 words

64M

SYNCHRONOUS

70 Cel

0 Cel

64MX8

3-STATE

UNSPECIFIED

DIMM

DIMM200,24

RECTANGULAR

MICROELECTRONIC ASSEMBLY

2.5

Not Qualified

8192

31.9 mm

YES

.04 Amp

DRAMs

1640 mA

2.7 V

2.3 V

2.5

NO

CMOS

COMMERCIAL

GOLD

NO LEAD

.61 mm

DUAL

3.8 mm

MT8VDDT6464HY-335F3 by Micron Technology

MT8VDDT6464HY-335F3

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 200; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

SINGLE BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH; WD-MAX

167 MHz

COMMON

R-XDMA-N200

e4

67.6 mm

536870912 bit

DDR DRAM MODULE

8

1

1

200

67108864 words

64M

SYNCHRONOUS

70 Cel

0 Cel

64MX8

3-STATE

UNSPECIFIED

DIMM

DIMM200,24

RECTANGULAR

MICROELECTRONIC ASSEMBLY

2.5

Not Qualified

8192

31.9 mm

YES

.04 Amp

DRAMs

3240 mA

2.6 V

2.3 V

2.5

NO

CMOS

COMMERCIAL

GOLD

NO LEAD

.6 mm

DUAL

3.8 mm

MT4VDDT3264HY-40BF2 by Micron Technology

MT4VDDT3264HY-40BF2

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 200; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

SINGLE BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH; WD-MAX

200 MHz

COMMON

R-XDMA-N200

e4

67.6 mm

2147483648 bit

DDR DRAM MODULE

64

1

1

200

33554432 words

32M

SYNCHRONOUS

70 Cel

0 Cel

32MX64

3-STATE

UNSPECIFIED

DIMM

DIMM200,24

RECTANGULAR

MICROELECTRONIC ASSEMBLY

2.6

Not Qualified

8192

31.9 mm

YES

DRAMs

1920 mA

2.7 V

2.5 V

2.6

NO

CMOS

COMMERCIAL

GOLD

NO LEAD

.6 mm

DUAL

2.45 mm

MT53E256M32D2DS-053AIT:BTR by Micron Technology

MT53E256M32D2DS-053AIT:BTR

Micron Technology

LPDDR4X DRAM; No. of Terminals: 200; Package Code: VFBGA; Package Shape: RECTANGULAR; Memory Density: 8589934592 bit; Interleaved Burst Length: 16,32;

SINGLE BANK PAGE BURST

SELF REFRESH; IT ALSO REQUIRES 1.8V NOM; TERM PITCH-MAX

1866 MHz

COMMON

16,32

R-PBGA-B200

e1

14.5 mm

8589934592 bit

LPDDR4X DRAM

32

1

1

200

268435456 words

256M

SYNCHRONOUS

95 Cel

-40 Cel

256MX32

3-STATE

PLASTIC/EPOXY

VFBGA

BGA200,12X20,32/25

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

260

AEC-Q100

.8 mm

YES

16,32

1.17 V

1.06 V

1.1

YES

CMOS

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

30

10 mm

MT53E128M32D2FW-046AIT:A by Micron Technology

MT53E128M32D2FW-046AIT:A

Micron Technology

LPDDR4 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 200; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

SINGLE BANK PAGE BURST

SELF REFRESH; IT ALSO REQUIRES 1.8V NOM

2133 MHz

COMMON

R-PBGA-B200

14.5 mm

4294967296 bit

LPDDR4 DRAM

32

1

1

200

134217728 words

128M

SYNCHRONOUS

85 Cel

-40 Cel

128MX32

PLASTIC/EPOXY

TFBGA

BGA200,12X22,32/25

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

NOT SPECIFIED

8192

AEC-Q100

1.1 mm

YES

1.06 V

1.17 V

1.06 V

1.1

YES

CMOS

INDUSTRIAL

BALL

.65 mm

BOTTOM

NOT SPECIFIED

10 mm

MT53E128M32D2DS-046AAT:A by Micron Technology

MT53E128M32D2DS-046AAT:A

Micron Technology

Micron Technology's MT53E128M32D2DS-046AAT:A is a LPDDR4 DRAM with 128MX32 organization, operating at 2133 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for industrial applications requiring high memory density and fast clock frequency.

SINGLE BANK PAGE BURST

SELF REFRESH; IT ALSO REQUIRES 1.8V NOM

2133 MHz

COMMON

R-PBGA-B200

14.5 mm

4294967296 bit

LPDDR4 DRAM

32

1

1

200

134217728 words

128M

SYNCHRONOUS

105 Cel

-40 Cel

128MX32

PLASTIC/EPOXY

VFBGA

BGA200,12X22,32/25

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

NOT SPECIFIED

8192

AEC-Q100

.8 mm

YES

1.06 V

1.17 V

1.06 V

1.1

YES

CMOS

INDUSTRIAL

BALL

.65 mm

BOTTOM

NOT SPECIFIED

10 mm

MT53E128M32D2FW-046AUT:A by Micron Technology

MT53E128M32D2FW-046AUT:A

Micron Technology

LPDDR4 DRAM; Temperature Grade: AUTOMOTIVE; No. of Terminals: 200; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

SINGLE BANK PAGE BURST

SELF REFRESH; IT ALSO REQUIRES 1.8V NOM

2133 MHz

COMMON

R-PBGA-B200

14.5 mm

4294967296 bit

LPDDR4 DRAM

32

1

1

200

134217728 words

128M

SYNCHRONOUS

125 Cel

-40 Cel

128MX32

PLASTIC/EPOXY

TFBGA

BGA200,12X22,32/25

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

NOT SPECIFIED

8192

AEC-Q100

1.1 mm

YES

1.06 V

1.17 V

1.06 V

1.1

YES

CMOS

AUTOMOTIVE

BALL

.65 mm

BOTTOM

NOT SPECIFIED

10 mm

MT53E128M32D2DS-046AUT:A by Micron Technology

MT53E128M32D2DS-046AUT:A

Micron Technology

Micron Technology's MT53E128M32D2DS-046AUT:A is a LPDDR4 DRAM with 128MX32 organization, operating at 2133 MHz. It has a very thin profile, fine pitch package style suitable for automotive applications. Features include synchronous operation, self-refresh capability, and common I/O type.

SINGLE BANK PAGE BURST

SELF REFRESH; IT ALSO REQUIRES 1.8V NOM

2133 MHz

COMMON

R-PBGA-B200

14.5 mm

4294967296 bit

LPDDR4 DRAM

32

1

1

200

134217728 words

128M

SYNCHRONOUS

125 Cel

-40 Cel

128MX32

PLASTIC/EPOXY

VFBGA

BGA200,12X22,32/25

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

NOT SPECIFIED

8192

AEC-Q100

.8 mm

YES

1.06 V

1.17 V

1.06 V

1.1

YES

CMOS

AUTOMOTIVE

BALL

.65 mm

BOTTOM

NOT SPECIFIED

10 mm

MT53E128M16D1DS-053AAT:A by Micron Technology

MT53E128M16D1DS-053AAT:A

Micron Technology

LPDDR4 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 200; Package Code: VFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

SINGLE BANK PAGE BURST

SELF REFRESH; IT ALSO REQUIRES 1.8V NOM

1866 MHz

COMMON

R-PBGA-B200

14.5 mm

2147483648 bit

LPDDR4 DRAM

16

1

1

200

134217728 words

128M

SYNCHRONOUS

105 Cel

-40 Cel

128MX16

PLASTIC/EPOXY

VFBGA

BGA200,12X22,32/25

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

8192

AEC-Q100

.8 mm

YES

1.06 V

1.17 V

1.06 V

1.1

YES

CMOS

INDUSTRIAL

BALL

.65 mm

BOTTOM

10 mm

MT53B128M32D1DS-062AIT:A by Micron Technology

MT53B128M32D1DS-062AIT:A

Micron Technology

LPDDR4 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 200; Package Code: VFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

SINGLE BANK PAGE BURST

SELF REFRESH; IT ALSO REQUIRES 1.8V NOM

1600 MHz

COMMON

R-PBGA-B200

e1

14.5 mm

4294967296 bit

LPDDR4 DRAM

32

1

1

200

134217728 words

128M

SYNCHRONOUS

95 Cel

-40 Cel

128MX32

PLASTIC/EPOXY

VFBGA

BGA200,12X22,32/25

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

260

8192

AEC-Q100

.8 mm

YES

1.06 V

1.17 V

1.06 V

1.1

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.65 mm

BOTTOM

30

10 mm

MT53E128M16D1FW-046AIT:A by Micron Technology

MT53E128M16D1FW-046AIT:A

Micron Technology

LPDDR4 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 200; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

SINGLE BANK PAGE BURST

SELF REFRESH; IT ALSO REQUIRES 1.8V NOM

2133 MHz

COMMON

R-PBGA-B200

14.5 mm

2147483648 bit

LPDDR4 DRAM

16

1

1

200

134217728 words

128M

SYNCHRONOUS

85 Cel

-40 Cel

128MX16

PLASTIC/EPOXY

TFBGA

BGA200,12X22,32/25

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

NOT SPECIFIED

8192

AEC-Q100

1.1 mm

YES

1.06 V

1.17 V

1.06 V

1.1

YES

CMOS

INDUSTRIAL

BALL

.65 mm

BOTTOM

NOT SPECIFIED

10 mm

MT53E256M32D2FW-046AUT:B by Micron Technology

MT53E256M32D2FW-046AUT:B

Micron Technology

Micron Technology's MT53E256M32D2FW-046AUT:B is a LPDDR4 DRAM with 256MX32 organization, operating at 2133 MHz. It features a common I/O type, self-refresh mode, and AEC-Q100 screening level. Ideal for applications requiring high-speed synchronous memory with low power consumption.

MULTI BANK PAGE BURST

2133 MHz

COMMON

16,32

R-PBGA-B200

e1

14.5 mm

8589934592 bit

LPDDR4 DRAM

32

1

1

200

268435456 words

256M

SYNCHRONOUS

125 Cel

-40 Cel

256MX32

3-STATE

PLASTIC/EPOXY

TFBGA

BGA200,12X22,32/25

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

AEC-Q100

1.1 mm

YES

16,32

1.17 V

1.06 V

1.1

YES

CMOS

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

30

10 mm

MT53E128M16D1DS-046AIT:A by Micron Technology

MT53E128M16D1DS-046AIT:A

Micron Technology

LPDDR4 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 200; Package Code: VFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

SINGLE BANK PAGE BURST

SELF REFRESH; IT ALSO REQUIRES 1.8V NOM

2133 MHz

COMMON

R-PBGA-B200

14.5 mm

2147483648 bit

LPDDR4 DRAM

16

1

1

200

134217728 words

128M

SYNCHRONOUS

85 Cel

-40 Cel

128MX16

PLASTIC/EPOXY

VFBGA

BGA200,12X22,32/25

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

NOT SPECIFIED

8192

AEC-Q100

.8 mm

YES

1.06 V

1.17 V

1.06 V

1.1

YES

CMOS

INDUSTRIAL

BALL

.65 mm

BOTTOM

NOT SPECIFIED

10 mm

MT53E128M16D1DS-053AIT:A by Micron Technology

MT53E128M16D1DS-053AIT:A

Micron Technology

LPDDR4 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 200; Package Code: VFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

SINGLE BANK PAGE BURST

SELF REFRESH; IT ALSO REQUIRES 1.8V NOM

1866 MHz

COMMON

R-PBGA-B200

14.5 mm

2147483648 bit

LPDDR4 DRAM

16

1

1

200

134217728 words

128M

SYNCHRONOUS

85 Cel

-40 Cel

128MX16

PLASTIC/EPOXY

VFBGA

BGA200,12X22,32/25

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

NOT SPECIFIED

8192

AEC-Q100

.8 mm

YES

1.06 V

1.17 V

1.06 V

1.1

YES

CMOS

INDUSTRIAL

BALL

.65 mm

BOTTOM

NOT SPECIFIED

10 mm

MT53E128M16D1DS-046AAT:A by Micron Technology

MT53E128M16D1DS-046AAT:A

Micron Technology

LPDDR4 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 200; Package Code: VFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

SINGLE BANK PAGE BURST

SELF REFRESH; IT ALSO REQUIRES 1.8V NOM

2133 MHz

COMMON

R-PBGA-B200

14.5 mm

2147483648 bit

LPDDR4 DRAM

16

1

1

200

134217728 words

128M

SYNCHRONOUS

105 Cel

-40 Cel

128MX16

PLASTIC/EPOXY

VFBGA

BGA200,12X22,32/25

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

NOT SPECIFIED

8192

AEC-Q100

.8 mm

YES

1.06 V

1.17 V

1.06 V

1.1

YES

CMOS

INDUSTRIAL

BALL

.65 mm

BOTTOM

NOT SPECIFIED

10 mm

MT53E128M32D2DS-053AUT:A by Micron Technology

MT53E128M32D2DS-053AUT:A

Micron Technology

Micron Technology's MT53E128M32D2DS-053AUT:A is a LPDDR4 DRAM with 128MX32 organization, operating at 1866 MHz. It features synchronous operation, self-refresh capability, and AEC-Q100 screening level for automotive applications. The package style is grid array with very thin profile and fine pitch, suitable for single bank page burst access mode in automotive systems.

SINGLE BANK PAGE BURST

SELF REFRESH; IT ALSO REQUIRES 1.8V NOM

1866 MHz

COMMON

R-PBGA-B200

14.5 mm

4294967296 bit

LPDDR4 DRAM

32

1

1

200

134217728 words

128M

SYNCHRONOUS

125 Cel

-40 Cel

128MX32

PLASTIC/EPOXY

VFBGA

BGA200,12X22,32/25

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

NOT SPECIFIED

8192

AEC-Q100

.8 mm

YES

1.06 V

1.17 V

1.06 V

1.1

YES

CMOS

AUTOMOTIVE

BALL

.65 mm

BOTTOM

NOT SPECIFIED

10 mm

MT4VDDT1664HY-335M1 by Micron Technology

MT4VDDT1664HY-335M1

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 200; Package Code: DIMM; Package Shape: RECTANGULAR; No. of Words Code: 16M;

SINGLE BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX

R-XZMA-N200

67.6 mm

1073741824 bit

DDR DRAM MODULE

64

1

1

200

16777216 words

16M

SYNCHRONOUS

70 Cel

0 Cel

16MX64

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

31.9 mm

YES

2.7 V

2.3 V

2.5

NO

CMOS

COMMERCIAL

NO LEAD

ZIG-ZAG

2.45 mm

MT16HTF25664HZ-800M1 by Micron Technology

MT16HTF25664HZ-800M1

Micron Technology

Micron Technology's MT16HTF25664HZ-800M1 is a 256MX64 DDR DRAM MODULE with 17179869184 bit memory density. Operating at 1.8V, it features synchronous mode and self-refresh capability. Ideal for commercial applications, this rectangular microelectronic assembly has a dual bank page burst access mode.

DUAL BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX

R-XZMA-N200

67.6 mm

17179869184 bit

DDR DRAM MODULE

64

1

1

200

268435456 words

256M

SYNCHRONOUS

70 Cel

0 Cel

256MX64

UNSPECIFIED

RECTANGULAR

MICROELECTRONIC ASSEMBLY

30.15 mm

YES

1.9 V

1.7 V

1.8

NO

CMOS

COMMERCIAL

NO LEAD

ZIG-ZAG

3.8 mm

MT16HTF25664HIZ-667M1 by Micron Technology

MT16HTF25664HIZ-667M1

Micron Technology

Micron Technology's MT16HTF25664HIZ-667M1 is a 256MX64 DDR DRAM MODULE with 17179869184 bit memory density. It operates synchronously at 1.8V, featuring dual bank page burst access mode and self-refresh capability. Ideal for industrial applications requiring reliable, high-speed memory performance in a compact MICROELECTRONIC ASSEMBLY package.

DUAL BANK PAGE BURST

SELF REFRESH; WD-MAX

R-XZMA-N200

67.6 mm

17179869184 bit

DDR DRAM MODULE

64

1

1

200

268435456 words

256M

SYNCHRONOUS

85 Cel

-40 Cel

256MX64

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

30.15 mm

YES

1.9 V

1.7 V

1.8

NO

CMOS

INDUSTRIAL

NO LEAD

ZIG-ZAG

3.8 mm

MT53B512M32D2DS-062AAT:C by Micron Technology

MT53B512M32D2DS-062AAT:C

Micron Technology

LPDDR4 DRAM; No. of Terminals: 200; Package Code: VFBGA; Refresh Cycles: 16384; Package Shape: RECTANGULAR; Maximum Clock Frequency (fCLK): 1600 MHz;

DUAL BANK PAGE BURST

SELF REFRESH, IT ALSO REQUIRES 1.8V NOMINAL SUPPLY, TERM PITCH-MAX

1600 MHz

COMMON

16,32

R-PBGA-B200

14.5 mm

17179869184 bit

LPDDR4 DRAM

32

1

1

200

536870912 words

512M

SYNCHRONOUS

105 Cel

-40 Cel

512MX32

PLASTIC/EPOXY

VFBGA

BGA200,12X22,32/25

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

16384

.8 mm

YES

16,32

.0033 Amp

410 mA

1.17 V

1.06 V

1.1

YES

CMOS

BALL

.8 mm

BOTTOM

10 mm

MT53B256M32D1NP-062AUT:C by Micron Technology

MT53B256M32D1NP-062AUT:C

Micron Technology

LPDDR4 DRAM; No. of Terminals: 200; Package Code: VFBGA; Refresh Cycles: 16384; Package Shape: RECTANGULAR; Organization: 256MX32;

SINGLE BANK PAGE BURST

SELF REFRESH, IT ALSO REQUIRES 1.8V NOMINAL SUPPLY, TERM PITCH-MAX

1600 MHz

COMMON

16,32

R-PBGA-B200

14.5 mm

8589934592 bit

LPDDR4 DRAM

32

1

1

200

268435456 words

256M

SYNCHRONOUS

125 Cel

-40 Cel

256MX32

PLASTIC/EPOXY

VFBGA

BGA200,12X22,32/25

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

16384

.8 mm

YES

16,32

.005 Amp

445 mA

1.17 V

1.06 V

1.1

YES

CMOS

BALL

.8 mm

BOTTOM

10 mm

MT53B512M32D2DS-062AIT:C by Micron Technology

MT53B512M32D2DS-062AIT:C

Micron Technology

LPDDR4 DRAM; No. of Terminals: 200; Package Code: VFBGA; Refresh Cycles: 16384; Package Shape: RECTANGULAR; Maximum Operating Temperature: 95 Cel;

DUAL BANK PAGE BURST

SELF REFRESH, IT ALSO REQUIRES 1.8V NOMINAL SUPPLY, TERM PITCH-MAX

1600 MHz

COMMON

16,32

R-PBGA-B200

14.5 mm

17179869184 bit

LPDDR4 DRAM

32

1

1

200

536870912 words

512M

SYNCHRONOUS

95 Cel

-40 Cel

512MX32

PLASTIC/EPOXY

VFBGA

BGA200,12X22,32/25

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

16384

.8 mm

YES

16,32

.0025 Amp

400 mA

1.17 V

1.06 V

1.1

YES

CMOS

BALL

.8 mm

BOTTOM

10 mm

MT53B256M32D1DS-062AUT:C by Micron Technology

MT53B256M32D1DS-062AUT:C

Micron Technology

LPDDR4 DRAM; No. of Terminals: 200; Package Code: VFBGA; Refresh Cycles: 16384; Package Shape: RECTANGULAR; Package Body Material: PLASTIC/EPOXY;

SINGLE BANK PAGE BURST

SELF REFRESH, IT ALSO REQUIRES 1.8V NOMINAL SUPPLY, TERM PITCH-MAX

1600 MHz

COMMON

16,32

R-PBGA-B200

14.5 mm

8589934592 bit

LPDDR4 DRAM

32

1

1

200

268435456 words

256M

SYNCHRONOUS

125 Cel

-40 Cel

256MX32

PLASTIC/EPOXY

VFBGA

BGA200,12X22,32/25

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

16384

.8 mm

YES

16,32

.005 Amp

445 mA

1.17 V

1.06 V

1.1

YES

CMOS

BALL

.8 mm

BOTTOM

10 mm

MT53B256M32D1DS-062AAT:C by Micron Technology

MT53B256M32D1DS-062AAT:C

Micron Technology

Micron Technology's MT53B256M32D1DS-062AAT:C is a LPDDR4 DRAM with 256MX32 organization, operating at 1600 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for industrial applications requiring high memory density and fast data processing.

SINGLE BANK PAGE BURST

SELF REFRESH, IT ALSO REQUIRES 1.8V NOMINAL SUPPLY, TERM PITCH-MAX

1600 MHz

COMMON

16,32

R-PBGA-B200

14.5 mm

8589934592 bit

LPDDR4 DRAM

32

1

1

200

268435456 words

256M

SYNCHRONOUS

105 Cel

-40 Cel

256MX32

PLASTIC/EPOXY

VFBGA

BGA200,12X22,32/25

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

16384

.8 mm

YES

16,32

.0033 Amp

410 mA

1.17 V

1.06 V

1.1

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

10 mm

MT4VDDT1664HY-335K1 by Micron Technology

MT4VDDT1664HY-335K1

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 200; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

SINGLE BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH; WD-MAX

167 MHz

COMMON

R-XDMA-N200

67.6 mm

1073741824 bit

DDR DRAM MODULE

64

1

1

200

16777216 words

16M

SYNCHRONOUS

70 Cel

0 Cel

16MX64

3-STATE

UNSPECIFIED

DIMM

DIMM200,24

RECTANGULAR

MICROELECTRONIC ASSEMBLY

NOT SPECIFIED

2.5

Not Qualified

8192

31.9 mm

YES

DRAMs

1080 mA

2.7 V

2.3 V

2.5

NO

CMOS

COMMERCIAL

NO LEAD

.6 mm

DUAL

NOT SPECIFIED

2.45 mm

MT53D1024M32D4DT-046AAT:D by Micron Technology

MT53D1024M32D4DT-046AAT:D

Micron Technology

Micron Technology's MT53D1024M32D4DT-046AAT:D is a LPDDR4 DRAM with 1GX32 organization, operating at 2136.7 MHz clock frequency. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high memory density and fast data processing in automotive electronics or mobile devices.

MULTI BANK PAGE BURST

SELF REFRESH; IT ALSO REQUIRES 1.8V NOM; TERM PITCH-MAX

2136.7 MHz

COMMON

16,32

R-PBGA-B200

14.5 mm

34359738368 bit

LPDDR4 DRAM

32

1

1

200

1073741824 words

1G

SYNCHRONOUS

105 Cel

-40 Cel

1GX32

PLASTIC/EPOXY

VFBGA

BGA200,12X22,32/25

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

NOT SPECIFIED

AEC-Q100

.95 mm

YES

16,32

1.17 V

1.06 V

1.1

YES

CMOS

BALL

.8 mm

BOTTOM

NOT SPECIFIED

10 mm

MT53E256M32D2DS-046AAT:B by Micron Technology

MT53E256M32D2DS-046AAT:B

Micron Technology

Micron Technology's MT53E256M32D2DS-046AAT:B is a LPDDR4 DRAM with 256MX32 organization, operating at 2133 MHz. It features a very thin profile package style with 200 terminals and supports synchronous operation. Ideal for applications requiring high-speed memory access in automotive electronics due to AEC-Q100 screening level.

MULTI BANK PAGE BURST

2133 MHz

COMMON

16,32

R-PBGA-B200

14.5 mm

8589934592 bit

LPDDR4 DRAM

32

1

1

200

268435456 words

256M

SYNCHRONOUS

105 Cel

-40 Cel

256MX32

3-STATE

PLASTIC/EPOXY

VFBGA

BGA200,12X22,32/25

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

NOT SPECIFIED

AEC-Q100

.8 mm

YES

16,32

1.17 V

1.06 V

1.1

YES

CMOS

BALL

.8 mm

BOTTOM

NOT SPECIFIED

10 mm

MT53E768M32D4DT-046AAT:E by Micron Technology

MT53E768M32D4DT-046AAT:E

Micron Technology

Micron Technology's MT53E768M32D4DT-046AAT:E is a LPDDR4 DRAM with 768MX32 organization, operating at 2133 MHz. It features a very thin profile, fine pitch package style and supports multi-bank page burst access mode. Ideal for industrial applications requiring high memory density and fast clock frequencies up to 1.17V.

MULTI BANK PAGE BURST

SELF REFRESH, IT ALSO REQUIRES 1.8V NOMINAL SUPPLY, TERM PITCH-MAX

2133 MHz

COMMON

16,32

R-PBGA-B200

14.5 mm

25769803776 bit

LPDDR4 DRAM

32

1

1

200

805306368 words

768M

SYNCHRONOUS

105 Cel

-40 Cel

768MX32

3-STATE

PLASTIC/EPOXY

VFBGA

BGA200,12X20,32/25

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

NOT SPECIFIED

AEC-Q100

.95 mm

YES

16,32

1.17 V

1.06 V

1.1

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

NOT SPECIFIED

10 mm

MT53E768M32D4DT-053AAT:E by Micron Technology

MT53E768M32D4DT-053AAT:E

Micron Technology

LPDDR4 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 200; Package Code: VFBGA; Package Shape: RECTANGULAR; No. of Words: 805306368 words;

MULTI BANK PAGE BURST

SELF REFRESH, IT ALSO REQUIRES 1.8V NOMINAL SUPPLY, TERM PITCH-MAX

1866 MHz

COMMON

16,32

R-PBGA-B200

14.5 mm

25769803776 bit

LPDDR4 DRAM

32

1

1

200

805306368 words

768M

SYNCHRONOUS

105 Cel

-40 Cel

768MX32

3-STATE

PLASTIC/EPOXY

VFBGA

BGA200,12X20,32/25

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

NOT SPECIFIED

AEC-Q100

.95 mm

YES

16,32

1.17 V

1.06 V

1.1

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

NOT SPECIFIED

10 mm

MT53B1024M32D4NQ-062WT:C by Micron Technology

MT53B1024M32D4NQ-062WT:C

Micron Technology

DDR4 DRAM; No. of Terminals: 200; Package Code: VFBGA; Package Shape: RECTANGULAR; Technology: CMOS; No. of Words: 1073741824 words;

DUAL BANK PAGE BURST

SELF REFRESH; IT ALSO REQUIRES 1.8V NOM

1600 MHz

COMMON

16,32

R-PBGA-B200

14.5 mm

34359738368 bit

DDR4 DRAM

32

1

1

200

1073741824 words

1G

SYNCHRONOUS

85 Cel

-30 Cel

1GX32

PLASTIC/EPOXY

VFBGA

BGA200,12X22,32/25

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.95 mm

YES

16,32

1.17 V

1.06 V

1.1

YES

CMOS

BALL

.8 mm

BOTTOM

10 mm

MT53B512M32D2NP-062WT:C by Micron Technology

MT53B512M32D2NP-062WT:C

Micron Technology

Micron Technology's MT53B512M32D2NP-062WT:C is a DDR4 DRAM with 512MX32 organization, operating at 1600 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory with a max clock frequency of 1600 MHz.

DUAL BANK PAGE BURST

SELF REFRESH; IT ALSO REQUIRES 1.8V NOM

1600 MHz

COMMON

16,32

R-PBGA-B200

e1

14.5 mm

17179869184 bit

DDR4 DRAM

32

1

1

200

536870912 words

512M

SYNCHRONOUS

85 Cel

-30 Cel

512MX32

PLASTIC/EPOXY

VFBGA

BGA200,12X22,32/25

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

260

.8 mm

YES

16,32

1.17 V

1.06 V

1.1

YES

CMOS

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

30

10 mm

MT53E768M32D4DT-053AIT:E by Micron Technology

MT53E768M32D4DT-053AIT:E

Micron Technology

Micron Technology's MT53E768M32D4DT-053AIT:E is a LPDDR4 DRAM with 768MX32 organization, operating at 1866 MHz. It features a very thin profile package style, common I/O type, and supports multi-bank page burst access mode. Ideal for industrial applications requiring high memory density and fast clock frequencies up to 1.17V supply voltage.

MULTI BANK PAGE BURST

SELF REFRESH, IT ALSO REQUIRES 1.8V NOMINAL SUPPLY, TERM PITCH-MAX

1866 MHz

COMMON

16,32

R-PBGA-B200

14.5 mm

25769803776 bit

LPDDR4 DRAM

32

1

1

200

805306368 words

768M

SYNCHRONOUS

95 Cel

-40 Cel

768MX32

3-STATE

PLASTIC/EPOXY

VFBGA

BGA200,12X20,32/25

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

NOT SPECIFIED

AEC-Q100

.95 mm

YES

16,32

1.17 V

1.06 V

1.1

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

NOT SPECIFIED

10 mm

IS43LQ32256A-062BLI by Integrated Silicon Solution

IS43LQ32256A-062BLI

Integrated Silicon Solution

IS43LQ32256A-062BLI by Integrated Silicon Solution is a 256MX32 LPDDR4 DRAM with 1600 MHz clock frequency. It operates synchronously at temperatures from -40 to 85 °C, suitable for high-performance applications requiring fast data processing and multi-bank page burst access mode. The package style is grid array, thin profile, fine pitch, making it ideal for compact electronic devices.

MULTI BANK PAGE BURST

TERM PITCH-MAX; ALSO REQUIRE SUPPLY VOLTAGE 1.06V TO 1.17V

1600 MHz

COMMON

16,32

R-PBGA-B200

14.5 mm

8589934592 bit

LPDDR4 DRAM

32

1

1

200

268435456 words

256M

SYNCHRONOUS

85 Cel

-40 Cel

256MX32

PLASTIC/EPOXY

TFBGA

BGA200,12X22,32/25

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

16384

1.1 mm

NO

16,32

1.95 V

1.7 V

YES

CMOS

BALL

.65 mm

BOTTOM

10 mm

IS43LQ16128A-062BLI by Integrated Silicon Solution

IS43LQ16128A-062BLI

Integrated Silicon Solution

IS43LQ16128A-062BLI by Integrated Silicon Solution is a 128MX16 LPDDR4 DRAM with 1600 MHz clock frequency. It operates in synchronous mode, has a memory density of 2147483648 bit, and supports multi-bank page burst access. Ideal for industrial applications requiring high-speed data processing and low power consumption.

MULTI BANK PAGE BURST

terminal pitch-max

1600 MHz

COMMON

16,32

R-PBGA-B200

14.5 mm

2147483648 bit

LPDDR4 DRAM

16

1

1

200

134217728 words

128M

SYNCHRONOUS

95 Cel

-40 Cel

128MX16

PLASTIC/EPOXY

VFBGA

BGA200,12X22,32/25

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.85 mm

NO

16,32

1.95 V

1.7 V

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

10 mm

W66CP2NQUAFJ by Winbond Electronics

W66CP2NQUAFJ

Winbond Electronics

Winbond Electronics' W66CP2NQUAFJ is a 128MX32 LPDDR4 DRAM with 134,217,728 words and 4294967296 bit memory density. Operating at up to 1600 MHz, it features synchronous mode and self-refresh capability. Ideal for applications requiring high-speed data processing in compact devices.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY; TERM PITCH-MAX

1600 MHz

COMMON

16,32

R-PBGA-B200

14.5 mm

4294967296 bit

LPDDR4 DRAM

32

1

1

200

134217728 words

128M

SYNCHRONOUS

105 Cel

-40 Cel

128MX32

PLASTIC/EPOXY

VFBGA

BGA200,12X22,32/25

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.8 mm

YES

16,32

1.17 V

1.06 V

1.1

YES

CMOS

BALL

.8 mm

BOTTOM

10 mm

W66CP2NQUAGJ by Winbond Electronics

W66CP2NQUAGJ

Winbond Electronics

Winbond Electronics LPDDR4 DRAM W66CP2NQUAGJ features 128MX32 organization, operates at up to 1869.1 MHz clock frequency, and has a memory density of 4294967296 bit. Ideal for applications requiring high-speed synchronous operation in compact devices like smartphones and tablets.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY; TERM PITCH-MAX

1869.1 MHz

COMMON

16,32

R-PBGA-B200

14.5 mm

4294967296 bit

LPDDR4 DRAM

32

1

1

200

134217728 words

128M

SYNCHRONOUS

105 Cel

-40 Cel

128MX32

PLASTIC/EPOXY

VFBGA

BGA200,12X22,32/25

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.8 mm

YES

16,32

1.17 V

1.06 V

1.1

YES

CMOS

BALL

.8 mm

BOTTOM

10 mm

W66CP2NQUAHJ by Winbond Electronics

W66CP2NQUAHJ

Winbond Electronics

Winbond Electronics LPDDR4 DRAM W66CP2NQUAHJ features 128MX32 organization, operates at up to 2136.7 MHz clock frequency, and has a memory density of 4294967296 bit. Ideal for applications requiring high-speed synchronous operation in compact devices with limited space constraints.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY; TERM PITCH-MAX

2136.7 MHz

COMMON

16,32

R-PBGA-B200

14.5 mm

4294967296 bit

LPDDR4 DRAM

32

1

1

200

134217728 words

128M

SYNCHRONOUS

105 Cel

-40 Cel

128MX32

PLASTIC/EPOXY

VFBGA

BGA200,12X22,32/25

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.8 mm

YES

16,32

1.17 V

1.06 V

1.1

YES

CMOS

BALL

.8 mm

BOTTOM

10 mm

AS4C128M16MD4-062BAN by Alliance Memory

AS4C128M16MD4-062BAN

Alliance Memory

Alliance Memory's AS4C128M16MD4-062BAN is a 128MX16 LPDDR4 DRAM with 1600 MHz clock frequency, 1.1V supply voltage, and -40 to 105°C operating temperature range. Ideal for applications requiring high-speed synchronous memory with common I/O type and self-refresh capability in a compact grid array package.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOMINAL SUPPLY; TERM PITCH-MAX

1600 MHz

COMMON

16,32

R-PBGA-B200

14.5 mm

2147483648 bit

LPDDR4 DRAM

16

1

1

200

134217728 words

128M

SYNCHRONOUS

105 Cel

-40 Cel

128MX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA200,12X22,32/25

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.8 mm

YES

16,32

1.17 V

1.06 V

1.1

YES

CMOS

BALL

.8 mm

BOTTOM

10 mm

MT53E512M32D2FW-046AAT:D by Micron Technology

MT53E512M32D2FW-046AAT:D

Micron Technology

Micron Technology's MT53E512M32D2FW-046AAT:D is a LPDDR4 DRAM with 512MX32 organization, operating at 2136.7 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for industrial applications requiring high memory density and fast data processing in a compact package.

MULTI BANK PAGE BURST

SELF REFRESH; IT ALSO REQUIRES 1.8V NOM; TERM PITCH-MAX

2136.7 MHz

COMMON

16,32

R-PBGA-B200

14.5 mm

17179869184 bit

LPDDR4 DRAM

32

1

1

200

536870912 words

512M

SYNCHRONOUS

105 Cel

-40 Cel

512MX32

PLASTIC/EPOXY

TFBGA

BGA200,12X22,32/25

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

AEC-Q100

1.1 mm

YES

16,32

1.17 V

1.06 V

1.1

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

10 mm

MT53B128M32D1DS-062AUT:A by Micron Technology

MT53B128M32D1DS-062AUT:A

Micron Technology

LPDDR4 DRAM; Temperature Grade: AUTOMOTIVE; No. of Terminals: 200; Package Code: VFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

SINGLE BANK PAGE BURST

SELF REFRESH; IT ALSO REQUIRES 1.8V NOM

1600 MHz

COMMON

R-PBGA-B200

14.5 mm

4294967296 bit

LPDDR4 DRAM

32

1

1

200

134217728 words

128M

SYNCHRONOUS

125 Cel

-40 Cel

128MX32

PLASTIC/EPOXY

VFBGA

BGA200,12X22,32/25

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

8192

AEC-Q100

.8 mm

YES

1.06 V

1.17 V

1.06 V

1.1

YES

CMOS

AUTOMOTIVE

BALL

.65 mm

BOTTOM

10 mm

MT53B128M32D1DS-062AAT:A by Micron Technology

MT53B128M32D1DS-062AAT:A

Micron Technology

LPDDR4 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 200; Package Code: VFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

SINGLE BANK PAGE BURST

SELF REFRESH; IT ALSO REQUIRES 1.8V NOM

1600 MHz

COMMON

R-PBGA-B200

14.5 mm

4294967296 bit

LPDDR4 DRAM

32

1

1

200

134217728 words

128M

SYNCHRONOUS

105 Cel

-40 Cel

128MX32

PLASTIC/EPOXY

VFBGA

BGA200,12X22,32/25

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

8192

AEC-Q100

.8 mm

YES

1.06 V

1.17 V

1.06 V

1.1

YES

CMOS

INDUSTRIAL

BALL

.65 mm

BOTTOM

10 mm

MT53E384M32D2DS-046AIT:E by Micron Technology

MT53E384M32D2DS-046AIT:E

Micron Technology

LPDDR4 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 200; Package Code: VFBGA; Package Shape: RECTANGULAR; No. of Functions: 1;

MULTI BANK PAGE BURST

SELF REFRESH, IT ALSO REQUIRES 1.8V NOMINAL SUPPLY, TERM PITCH-MAX

2133 MHz

COMMON

16,32

R-PBGA-B200

14.5 mm

12884901888 bit

LPDDR4 DRAM

32

1

1

200

402653184 words

384M

SYNCHRONOUS

95 Cel

-40 Cel

384MX32

3-STATE

PLASTIC/EPOXY

VFBGA

BGA200,12X20,32/25

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

AEC-Q100

.8 mm

YES

16,32

1.17 V

1.06 V

1.1

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

10 mm

MT53E768M32D4DT-046AIT:E by Micron Technology

MT53E768M32D4DT-046AIT:E

Micron Technology

Micron Technology's MT53E768M32D4DT-046AIT:E is a LPDDR4 DRAM with 768MX32 organization, operating at 2133 MHz. It features common I/O type, self-refresh mode, and AEC-Q100 screening level. Ideal for industrial applications requiring high memory density and fast data processing capabilities.

MULTI BANK PAGE BURST

SELF REFRESH, IT ALSO REQUIRES 1.8V NOMINAL SUPPLY, TERM PITCH-MAX

2133 MHz

COMMON

16,32

R-PBGA-B200

14.5 mm

25769803776 bit

LPDDR4 DRAM

32

1

1

200

805306368 words

768M

SYNCHRONOUS

95 Cel

-40 Cel

768MX32

3-STATE

PLASTIC/EPOXY

VFBGA

BGA200,12X20,32/25

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

AEC-Q100

.95 mm

YES

16,32

1.17 V

1.06 V

1.1

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

10 mm