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WIRE Diodes & Rectifiers 431

Diodes & Rectifiers
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Application Minimum Breakdown Voltage Nominal Breakdown Voltage Case Connection Maximum Clamping Voltage Config Diode Cap Tolerance Minimum Diode Capacitance Ratio Maximum Diode Capacitance Nominal Diode Capacitance Diode Element Material Diode Type Maximum Dynamic Impedance Maximum Forward Voltage (VF) Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Maximum Limiting Voltage Moisture Sensitivity Level (MSL) Maximum Non Repetitive Peak Forward Current No. of Elements No. of Phases No. of Terminals Maximum Operating Temperature Minimum Operating Temperature Maximum Output Current Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity Maximum Power Dissipation Qualification Minimum Quality Factor Reference Standard Nominal Reference Voltage Nominal Regulation Current (Ireg) Maximum Repetitive Peak Reverse Voltage Maximum Reverse Current Maximum Reverse Recovery Time Reverse Test Voltage Sub-Category Surface Mount Technology Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Maximum Voltage Tolerance Working Test Current
PR1505S-A by Diodes Incorporated

PR1505S-A

Diodes Incorporated

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

EFFICIENCY

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

1.2 V

DO-41

O-PALF-W2

e3

1

50 A

1

1

2

150 Cel

-65 Cel

1.5 A

PLASTIC/EPOXY

ROUND

LONG FORM

260

Not Qualified

600 V

.25 us

Rectifier Diodes

NO

BRIGHT TIN

WIRE

AXIAL

10

PR1505S-B by Diodes Incorporated

PR1505S-B

Diodes Incorporated

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

EFFICIENCY

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

1.2 V

DO-41

O-PALF-W2

e3

1

50 A

1

1

2

150 Cel

-65 Cel

1.5 A

PLASTIC/EPOXY

ROUND

LONG FORM

260

Not Qualified

600 V

.25 us

Rectifier Diodes

NO

BRIGHT TIN

WIRE

AXIAL

10

STTH212RL by STMicroelectronics

STTH212RL

STMicroelectronics

STTH212RL by STMicroelectronics is a high-voltage ultra-fast recovery rectifier diode with a max reverse recovery time of 0.075 µs and operates at up to 175 °C. It supports 2 A output current and withstands peak reverse voltages of 1200 V. Ideal for demanding applications requiring rapid switching.

FREE WHEELING DIODE, SNUBBER DIODE, HIGH RELIABILITY

HIGH VOLTAGE ULTRA FAST RECOVERY

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

1.75 V

DO-201AD

O-XALF-W2

e3

40 A

1

1

2

175 Cel

2 A

UNSPECIFIED

ROUND

LONG FORM

Not Qualified

1200 V

.075 us

Rectifier Diodes

NO

MATTE TIN

WIRE

AXIAL

STTH212 by STMicroelectronics

STTH212

STMicroelectronics

STTH212 by STMicroelectronics is a high-voltage ultra-fast recovery rectifier diode with a max reverse recovery time of 0.075 µs and can handle up to 1200 V. It operates at temperatures up to 175 °C, making it ideal for demanding applications. With a forward voltage of 1.75 V and output current of 2 A, it's perfect for efficient power management.

FREE WHEELING DIODE, SNUBBER DIODE, HIGH RELIABILITY

HIGH VOLTAGE ULTRA FAST RECOVERY

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

1.75 V

DO-201AD

O-XALF-W2

e3

40 A

1

1

2

175 Cel

2 A

UNSPECIFIED

ROUND

LONG FORM

Not Qualified

1200 V

.075 us

Rectifier Diodes

NO

MATTE TIN

WIRE

AXIAL

MR856RLG by Onsemi

MR856RLG

Onsemi

MR856RLG by Onsemi is a single rectifier diode with a max forward voltage of 1.3V and output current of 3A. With a fast reverse recovery time of 0.3us, it operates efficiently in temperatures ranging from -65 to 125°C. Ideal for applications requiring high efficiency and isolation, this diode has a peak reverse voltage of 600V.

FREE WHEELING DIODE

EFFICIENCY

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

1.3 V

DO-201AD

O-PALF-W2

e3

100 A

1

1

2

125 Cel

-65 Cel

3 A

PLASTIC/EPOXY

ROUND

LONG FORM

Not Qualified

600 V

.3 us

Rectifier Diodes

NO

MATTE TIN

WIRE

AXIAL

MUR550APFG by Onsemi

MUR550APFG

Onsemi

MUR550APFG by Onsemi is a single rectifier diode with a max reverse recovery time of 0.095 us. It operates in temperatures ranging from -65 to 175 °C, making it suitable for ultra-fast recovery applications. With a peak repetitive reverse voltage of 520V and output current of 5A, it is ideal for high-power electronic circuits.

LOW LEAKAGE CURRENT

ULTRA FAST RECOVERY

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

.98 V

O-PALF-W2

e3

85 A

1

1

2

175 Cel

-65 Cel

5 A

PLASTIC/EPOXY

ROUND

LONG FORM

260

Not Qualified

520 V

.095 us

Rectifier Diodes

NO

TIN

WIRE

AXIAL

MUR220G by Onsemi

MUR220G

Onsemi

MUR220G by Onsemi is a single rectifier diode with ultra-fast recovery power, ideal for applications requiring high-speed performance. With a max reverse recovery time of 0.035 us and a max output current of 2A, it operates in temperatures ranging from -65 to 175 °C. The diode has a max repetitive peak reverse voltage of 200V and is housed in a plastic/epoxy package with matte tin terminal finish.

FREE WHEELING DIODE

ULTRA FAST RECOVERY POWER

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

.95 V

DO-41

O-PALF-W2

e3

35 A

1

1

2

175 Cel

-65 Cel

2 A

PLASTIC/EPOXY

ROUND

LONG FORM

Not Qualified

200 V

.035 us

Rectifier Diodes

NO

MATTE TIN

WIRE

AXIAL

1N5820-E3/73 by Vishay Intertechnology

1N5820-E3/73

Vishay Intertechnology

1N5820-E3/73 by Vishay Intertechnology is a Schottky rectifier diode with max forward voltage of 0.475V and max output current of 3A. Ideal for fast recovery applications, it has a max repetitive peak reverse voltage of 20V and non-repetitive peak forward current of 80A.

FREE WHEELING DIODE

FAST RECOVERY

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

.475 V

DO-201AD

O-PALF-W2

e3

80 A

1

1

2

-65 Cel

3 A

PLASTIC/EPOXY

ROUND

LONG FORM

Not Qualified

20 V

Rectifier Diodes

NO

SCHOTTKY

MATTE TIN

WIRE

AXIAL

MUR115G by Onsemi

MUR115G

Onsemi

The Onsemi MUR115G is a single rectifier diode with a max output current of 1A and a max repetitive peak reverse voltage of 150V. It has a fast max reverse recovery time of 0.035 us, making it suitable for applications requiring efficient switching such as power supplies and inverters. With an operating temperature range from -65 to 175°C, this diode is ideal for various electronic circuits.

FREE WHEELING DIODE

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

.875 V

DO-41

O-PALF-W2

e3

1

1

2

175 Cel

-65 Cel

1 A

PLASTIC/EPOXY

ROUND

LONG FORM

Not Qualified

150 V

.035 us

Rectifier Diodes

NO

MATTE TIN

WIRE

AXIAL

MUR115RLG by Onsemi

MUR115RLG

Onsemi

MUR115RLG by Onsemi is a single rectifier diode with a max output current of 1A and a max repetitive peak reverse voltage of 150V. With a fast reverse recovery time of 0.035 us, it is ideal for applications requiring efficient power conversion in temperature ranges from -65°C to 175°C. The diode's matte tin terminal finish and isolated case connection make it suitable for various electronic circuits.

FREE WHEELING DIODE

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

.875 V

DO-41

O-PALF-W2

e3

1

1

2

175 Cel

-65 Cel

1 A

PLASTIC/EPOXY

ROUND

LONG FORM

Not Qualified

150 V

.035 us

Rectifier Diodes

NO

MATTE TIN

WIRE

AXIAL

MUR140G by Onsemi

MUR140G

Onsemi

MUR140G by Onsemi is a single rectifier diode with a max forward voltage of 1.25V and output current of 1A. With a max reverse recovery time of 0.075us, it operates in temperatures ranging from -65°C to 175°C. Ideal for applications requiring high-speed switching and efficient power conversion.

FREE WHEELING DIODE

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

1.25 V

DO-41

O-PALF-W2

e3

35 A

1

1

2

175 Cel

-65 Cel

1 A

PLASTIC/EPOXY

ROUND

LONG FORM

Not Qualified

400 V

.075 us

Rectifier Diodes

NO

MATTE TIN

WIRE

AXIAL

STTH2R02QRL by STMicroelectronics

STTH2R02QRL

STMicroelectronics

STTH2R02QRL by STMicroelectronics is an ultra-fast recovery rectifier diode with a max reverse recovery time of 0.03 µs and operates at up to 175 °C. It supports a max output current of 2 A and peak reverse voltage of 200 V, ideal for high-efficiency applications. Its isolated case connection ensures reliable performance in various electronic circuits.

FREE WHEELING DIODE

ULTRA FAST RECOVERY

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

.8 V

DO-15

O-PALF-W2

e3

75 A

1

1

2

175 Cel

2 A

PLASTIC/EPOXY

ROUND

LONG FORM

Not Qualified

200 V

.03 us

Rectifier Diodes

NO

MATTE TIN

WIRE

AXIAL

STTH2R02Q by STMicroelectronics

STTH2R02Q

STMicroelectronics

STTH2R02Q by STMicroelectronics is an ultra-fast recovery rectifier diode with a max reverse recovery time of 0.03 µs and operates at up to 175 °C. It supports a max output current of 2 A and peak reverse voltage of 200 V, ideal for high-efficiency applications. Its isolated axial design ensures reliable performance in compact circuits.

FREE WHEELING DIODE

ULTRA FAST RECOVERY

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

.8 V

DO-15

O-PALF-W2

75 A

1

1

2

175 Cel

2 A

PLASTIC/EPOXY

ROUND

LONG FORM

NOT SPECIFIED

Not Qualified

200 V

.03 us

Rectifier Diodes

NO

WIRE

AXIAL

NOT SPECIFIED

STTH3R02Q by STMicroelectronics

STTH3R02Q

STMicroelectronics

STTH3R02Q by STMicroelectronics is a single rectifier diode with ultra-fast recovery time of 0.03 us. It has a max forward voltage of 0.8V and output current of 3A, suitable for applications requiring high-speed switching such as power supplies and inverters at temperatures up to 175°C.

FREE WHEELING DIODE

ULTRA FAST RECOVERY

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

.8 V

DO-15

O-PALF-W2

e3

75 A

1

1

2

175 Cel

3 A

PLASTIC/EPOXY

ROUND

LONG FORM

Not Qualified

200 V

.03 us

Rectifier Diodes

NO

MATTE TIN

WIRE

AXIAL

STTH4R02RL by STMicroelectronics

STTH4R02RL

STMicroelectronics

STTH4R02RL by STMicroelectronics is an ultra-fast recovery rectifier diode with a max reverse recovery time of 0.03 µs and operates at up to 175 °C. It supports a forward current of 4 A and peak reverse voltage of 200 V, ideal for high-efficiency applications. Its isolated case connection ensures reliable performance in various electronic circuits.

FREE WHEELING DIODE

ULTRA FAST RECOVERY

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

.83 V

DO-201AB

O-PALF-W2

e3

70 A

1

1

2

175 Cel

4 A

PLASTIC/EPOXY

ROUND

LONG FORM

Not Qualified

200 V

.03 us

Rectifier Diodes

NO

MATTE TIN

WIRE

AXIAL

STTH4R02 by STMicroelectronics

STTH4R02

STMicroelectronics

STTH4R02 by STMicroelectronics is an ultra-fast recovery rectifier diode with a max reverse recovery time of 0.03 µs and can handle up to 4 A output current. It operates at a max temp of 175 °C, making it ideal for high-performance applications. Its isolated case connection ensures reliability in various circuits.

FREE WHEELING DIODE

ULTRA FAST RECOVERY

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

.83 V

DO-201AB

O-PALF-W2

e3

70 A

1

1

2

175 Cel

4 A

PLASTIC/EPOXY

ROUND

LONG FORM

Not Qualified

200 V

.03 us

Rectifier Diodes

NO

MATTE TIN

WIRE

AXIAL

SB560A-E3/73 by Vishay Intertechnology

SB560A-E3/73

Vishay Intertechnology

Vishay Intertechnology's SB560A-E3/73 is a Schottky rectifier diode with a max forward voltage of 0.7V and output current of 5A. Operating b/w -65°C to 150°C, it has a max reverse voltage of 60V and non-repetitive peak forward current of 150A. Ideal for applications requiring high efficiency and low power loss in electronic circuits.

FREE WHEELING DIODE

GENERAL PURPOSE

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

.7 V

DO-201AD

O-PALF-W2

e3

150 A

1

1

2

150 Cel

-65 Cel

5 A

PLASTIC/EPOXY

ROUND

LONG FORM

Not Qualified

60 V

Rectifier Diodes

NO

SCHOTTKY

MATTE TIN

WIRE

AXIAL

UF5407-E3/54 by Vishay Intertechnology

UF5407-E3/54

Vishay Intertechnology

Vishay Intertechnology's UF5407-E3/54 rectifier diode has a max forward voltage of 1.7V and output current of 3A, making it ideal for efficiency applications. With a max reverse recovery time of 0.075us and repetitive peak reverse voltage of 800V, this diode operates in temperatures ranging from -55°C to 150°C.

FREE WHEELING DIODE

EFFICIENCY

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

1.7 V

DO-201AD

O-PALF-W2

e3

150 A

1

1

2

150 Cel

-55 Cel

3 A

PLASTIC/EPOXY

ROUND

LONG FORM

Not Qualified

800 V

.075 us

Rectifier Diodes

NO

MATTE TIN

WIRE

AXIAL

SRP600K-E3/54 by Vishay Intertechnology

SRP600K-E3/54

Vishay Intertechnology

The Vishay Intertechnology SRP600K-E3/54 is a single rectifier diode with a max forward voltage of 1.3V and output current of 6A. With a fast reverse recovery time of 0.2us, it operates efficiently in temperatures ranging from -50°C to 125°C. Ideal for applications requiring high efficiency and isolated case connection.

FREE WHEELING DIODE, LOW LEAKAGE CURRENT

EFFICIENCY

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

1.3 V

O-PALF-W2

e3

300 A

1

1

2

125 Cel

-50 Cel

6 A

PLASTIC/EPOXY

ROUND

LONG FORM

Not Qualified

800 V

.2 us

Rectifier Diodes

NO

MATTE TIN

WIRE

AXIAL

RGP15J-E3/54 by Vishay Intertechnology

RGP15J-E3/54

Vishay Intertechnology

The Vishay Intertechnology RGP15J-E3/54 is a single rectifier diode with a max reverse recovery time of 0.25 us and a max reverse current of 5 uA. It has a package shape of round and is suitable for efficiency applications, with an operating temperature range from -65 to 175°C.

FREE WHEELING DIODE, HIGH RELIABILITY, LOW LEAKAGE CURRENT

EFFICIENCY

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

1.3 V

DO-204AC

O-PALF-W2

e3

50 A

1

1

2

175 Cel

-65 Cel

1.5 A

PLASTIC/EPOXY

ROUND

LONG FORM

Not Qualified

600 V

5 uA

.25 us

600 V

Rectifier Diodes

NO

MATTE TIN

WIRE

AXIAL

RGP15J-E3/73 by Vishay Intertechnology

RGP15J-E3/73

Vishay Intertechnology

Vishay Intertechnology's RGP15J-E3/73 is a single rectifier diode with 600V reverse test voltage and 1.3V max forward voltage. It has a fast 0.25us reverse recovery time, making it ideal for efficiency applications in temperatures ranging from -65°C to 175°C.

FREE WHEELING DIODE, HIGH RELIABILITY, LOW LEAKAGE CURRENT

EFFICIENCY

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

1.3 V

DO-204AC

O-PALF-W2

e3

50 A

1

1

2

175 Cel

-65 Cel

1.5 A

PLASTIC/EPOXY

ROUND

LONG FORM

Not Qualified

600 V

5 uA

.25 us

600 V

Rectifier Diodes

NO

MATTE TIN

WIRE

AXIAL

1N4007-TP-HF by Micro Commercial Components

1N4007-TP-HF

Micro Commercial Components

1N4007-TP-HF by Micro Commercial Components is a single rectifier diode with 1000V peak reverse voltage and 1A output current. It has a max forward voltage of 1V, making it suitable for applications requiring fast recovery time like power supplies and battery chargers. With a package style of long form and matte tin terminal finish, this diode operates b/w -55 to 150°C.

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

1 V

DO-41

O-PALF-W2

e3

1

30 A

1

1

2

150 Cel

-55 Cel

1 A

PLASTIC/EPOXY

ROUND

LONG FORM

260

1000 V

5 uA

2 us

Rectifier Diodes

NO

Matte Tin (Sn)

WIRE

AXIAL

5

MBR5H150VPC-E1 by Diodes Incorporated

MBR5H150VPC-E1

Diodes Incorporated

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

LOW NOISE

HIGH VOLTAGE POWER

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

.92 V

O-PALF-W2

e3

125 A

1

1

2

175 Cel

5 A

PLASTIC/EPOXY

ROUND

LONG FORM

260

150 V

8 uA

NO

SCHOTTKY

MATTE TIN

WIRE

AXIAL

1N5404GP-E3/54 by Vishay Intertechnology

1N5404GP-E3/54

Vishay Intertechnology

Vishay Intertechnology's 1N5404GP-E3/54 diode is a single rectifier with a max reverse recovery time of 5 us and max output current of 3 A. Ideal for high voltage applications, it has a max repetitive peak reverse voltage of 400 V and operates b/w -65 to 175 °C.

FREE WHEELING DIODE, HIGH RELIABILITY, LOW LEAKAGE CURRENT, SNUBBER DIODE

HIGH VOLTAGE

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

1.1 V

DO-201AD

O-PALF-W2

e3

125 A

1

1

2

175 Cel

-65 Cel

3 A

PLASTIC/EPOXY

ROUND

LONG FORM

400 V

5 uA

5 us

NO

MATTE TIN

WIRE

AXIAL

1N5407GP-E3/73 by Vishay Intertechnology

1N5407GP-E3/73

Vishay Intertechnology

1N5407GP-E3/73 by Vishay Intertechnology is a single rectifier diode with 800V peak reverse voltage, 3A output current, and 5us reverse recovery time. Ideal for high voltage applications, it operates b/w -65°C to 175°C. The diode's matte tin finish and wire terminal form make it suitable for various electronic circuits.

FREE WHEELING DIODE, HIGH RELIABILITY, LOW LEAKAGE CURRENT, SNUBBER DIODE

HIGH VOLTAGE

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

1.1 V

DO-201AD

O-PALF-W2

e3

125 A

1

1

2

175 Cel

-65 Cel

3 A

PLASTIC/EPOXY

ROUND

LONG FORM

800 V

5 uA

5 us

NO

MATTE TIN

WIRE

AXIAL

JANTX1N645-1TR by Microsemi

JANTX1N645-1TR

Microsemi

JANTX1N645-1TR by Microsemi is a rectifier diode with a max output current of 0.4A and a max repetitive peak reverse voltage of 225V. It is commonly used in applications requiring diodes and rectifiers, such as power supplies and electronic circuits.

METALLURGICALLY BONDED

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

DO-35

O-LALF-W2

e0

1

1

2

150 Cel

-65 Cel

.4 A

GLASS

ROUND

LONG FORM

.5 W

Not Qualified

MIL-19500

225 V

NO

TIN LEAD

WIRE

AXIAL

MBR5200VP-E1 by Diodes Incorporated

MBR5200VP-E1

Diodes Incorporated

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

LOW NOISE

HIGH VOLTAGE POWER

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

.95 V

DO-27

O-PALF-W2

e3

100 A

1

1

2

150 Cel

-65 Cel

5 A

PLASTIC/EPOXY

ROUND

LONG FORM

260

200 V

500 uA

NO

SCHOTTKY

MATTE TIN

WIRE

AXIAL

MBR5200VP-G1 by Diodes Incorporated

MBR5200VP-G1

Diodes Incorporated

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

LOW NOISE

HIGH VOLTAGE POWER

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

.95 V

DO-27

O-PALF-W2

e3

100 A

1

1

2

150 Cel

-65 Cel

5 A

PLASTIC/EPOXY

ROUND

LONG FORM

260

200 V

500 uA

NO

SCHOTTKY

MATTE TIN

WIRE

AXIAL

MBR5200VPBTR-E1 by Diodes Incorporated

MBR5200VPBTR-E1

Diodes Incorporated

MBR5200VPBTR-E1 by Diodes Inc. is a Schottky rectifier diode with 200V reverse voltage, 5A output current, and 0.95V forward voltage. It is designed for high voltage power applications, featuring a max operating temperature of 150°C and min of -65°C. The diode has an isolated case connection, matte tin terminal finish, and wire terminal form for efficient performance in various electronic circuits.

LOW NOISE

HIGH VOLTAGE POWER

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

.95 V

DO-27

O-PALF-W2

e3

100 A

1

1

2

150 Cel

-65 Cel

5 A

PLASTIC/EPOXY

ROUND

LONG FORM

260

200 V

500 uA

NO

SCHOTTKY

MATTE TIN

WIRE

AXIAL

30

MBR5200VPTR-E1 by Diodes Incorporated

MBR5200VPTR-E1

Diodes Incorporated

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

LOW NOISE

HIGH VOLTAGE POWER

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

.95 V

DO-27

O-PALF-W2

e3

100 A

1

1

2

150 Cel

-65 Cel

5 A

PLASTIC/EPOXY

ROUND

LONG FORM

260

200 V

500 uA

NO

SCHOTTKY

MATTE TIN

WIRE

AXIAL

MBR5200VPTR-G1 by Diodes Incorporated

MBR5200VPTR-G1

Diodes Incorporated

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

LOW NOISE

HIGH VOLTAGE POWER

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

.95 V

DO-27

O-PALF-W2

e3

100 A

1

1

2

150 Cel

-65 Cel

5 A

PLASTIC/EPOXY

ROUND

LONG FORM

260

200 V

500 uA

NO

SCHOTTKY

MATTE TIN

WIRE

AXIAL

1N4531,133 by Nexperia

1N4531,133

Nexperia

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

DO-34

O-LALF-W2

e3

1

1

1

2

200 Cel

.2 A

GLASS

ROUND

LONG FORM

260

.5 W

IEC-134

75 V

.004 us

NO

TIN

WIRE

AXIAL

30

1N4531,143 by Nexperia

1N4531,143

Nexperia

1N4531,143 by Nexperia is a RECTIFIER DIODE with 75V VRRM and 0.2A IOM. It has a 0.004us trr and can handle up to 0.5W power dissipation. Commonly used in applications requiring fast switching and low forward voltage drop.

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

DO-34

O-LALF-W2

e3

1

1

1

2

200 Cel

.2 A

GLASS

ROUND

LONG FORM

260

.5 W

IEC-134

75 V

.004 us

NO

TIN

WIRE

AXIAL

30

30SQ045-TP by Micro Commercial Components

30SQ045-TP

Micro Commercial Components

30SQ045-TP by Micro Commercial Components is a single rectifier diode with a max repetitive peak reverse voltage of 45V and max output current of 30A. It has a max forward voltage of 0.52V, making it ideal for efficiency applications. With an operating temperature range from -50°C to 150°C, this diode is suitable for various electronic circuits.

EFFICIENCY

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

.52 V

O-PALF-W2

e3

1

275 A

1

1

2

150 Cel

-50 Cel

30 A

PLASTIC/EPOXY

ROUND

LONG FORM

260

45 V

100 uA

NO

MATTE TIN

WIRE

AXIAL

10

MUR420-M3/73 by Vishay Intertechnology

MUR420-M3/73

Vishay Intertechnology

Vishay Intertechnology's MUR420-M3/73 is a single rectifier diode with a max reverse recovery time of 0.035 us and max output current of 4A. It operates in temperatures ranging from -65 to 175 °C, making it ideal for efficiency applications requiring a forward voltage of 0.89V and peak reverse voltage of 200V.

FREE WHEELING DIODE, LOW LEAKAGE CURRENT

EFFICIENCY

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

.89 V

DO-201AD

O-PALF-W2

150 A

1

1

2

175 Cel

-65 Cel

4 A

PLASTIC/EPOXY

ROUND

LONG FORM

NOT SPECIFIED

200 V

5 uA

.035 us

NO

WIRE

AXIAL

NOT SPECIFIED

SB860-3G by Diotec Semiconductor Ag

SB860-3G

Diotec Semiconductor Ag

The Diotec Semiconductor Ag SB860-3G is a Schottky rectifier diode with a max output current of 8A and forward voltage of 0.55V. It has a reverse test voltage of 60V, making it suitable for applications requiring high efficiency power conversion in electronic circuits. With an operating temperature range from -50°C to 150°C, it is ideal for use in various industrial and automotive electronics.

FREE WHEELING DIODE

GENERAL PURPOSE

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

.55 V

O-PALF-W2

360 A

1

1

2

150 Cel

-50 Cel

8 A

PLASTIC/EPOXY

ROUND

LONG FORM

260

60 V

50 uA

60 V

NO

SCHOTTKY

WIRE

AXIAL

10

NUR460P/L02,112 by NXP Semiconductors

NUR460P/L02,112

NXP Semiconductors

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

LOW LEAKAGE CURRENT

HIGH VOLTAGE ULTRA FAST SOFT RECOVERY POWER

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

1.25 V

DO-201AD

O-PALF-W2

110 A

1

1

2

175 Cel

PLASTIC/EPOXY

ROUND

LONG FORM

IEC-60134

600 V

10 uA

.075 us

NO

WIRE

AXIAL

NUR460P/L07,112 by NXP Semiconductors

NUR460P/L07,112

NXP Semiconductors

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

LOW LEAKAGE CURRENT

HIGH VOLTAGE ULTRA FAST SOFT RECOVERY POWER

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

1.25 V

DO-201AD

O-PALF-W2

110 A

1

1

2

175 Cel

PLASTIC/EPOXY

ROUND

LONG FORM

IEC-60134

600 V

10 uA

.075 us

NO

WIRE

AXIAL

SK20H45 by Taiwan Semiconductor

SK20H45

Taiwan Semiconductor

SK20H45 by Taiwan Semiconductor is a Schottky rectifier diode with a max output current of 20A and max repetitive peak reverse voltage of 45V. It is designed for high efficiency applications, operating b/w -55°C to 200°C. The diode features a single configuration in a round package with pure tin terminal finish.

LOW POWER LOSS

EFFICIENCY

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

.55 V

O-PALF-W2

275 A

1

1

2

200 Cel

-55 Cel

20 A

PLASTIC/EPOXY

ROUND

LONG FORM

45 V

500 uA

NO

SCHOTTKY

PURE TIN

WIRE

AXIAL

SK20H45H by Taiwan Semiconductor

SK20H45H

Taiwan Semiconductor

SK20H45H by Taiwan Semiconductor is a Schottky rectifier diode with a max output current of 20A and max repetitive peak reverse voltage of 45V. It operates b/w -55°C to 200°C, making it suitable for high-efficiency applications. The diode has a single configuration, round package shape, and pure tin terminal finish for optimal performance.

LOW POWER LOSS

EFFICIENCY

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

.55 V

O-PALF-W2

275 A

1

1

2

200 Cel

-55 Cel

20 A

PLASTIC/EPOXY

ROUND

LONG FORM

AEC-Q101

45 V

500 uA

NO

SCHOTTKY

PURE TIN

WIRE

AXIAL

1N5399S_HF by Diodes Incorporated

1N5399S_HF

Diodes Incorporated

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

GENERAL PURPOSE

1000 V

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

1.1 V

DO-41

O-PALF-W2

e3

50 A

1

1

2

150 Cel

-55 Cel

1.5 A

PLASTIC/EPOXY

ROUND

LONG FORM

260

1000 V

5 uA

1000 V

NO

BRIGHT TIN

WIRE

AXIAL

1N5406G_HF by Diodes Incorporated

1N5406G_HF

Diodes Incorporated

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

GENERAL PURPOSE

600 V

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

1.1 V

DO-201AD

O-PALF-W2

e3

125 A

1

1

2

150 Cel

-55 Cel

3 A

PLASTIC/EPOXY

ROUND

LONG FORM

260

600 V

5 uA

600 V

NO

BRIGHT TIN

WIRE

AXIAL

1N5408G_HF by Diodes Incorporated

1N5408G_HF

Diodes Incorporated

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

GENERAL PURPOSE

1000 V

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

1.1 V

DO-201AD

O-PALF-W2

e3

125 A

1

1

2

150 Cel

-55 Cel

3 A

PLASTIC/EPOXY

ROUND

LONG FORM

260

1000 V

5 uA

1000 V

NO

BRIGHT TIN

WIRE

AXIAL

SF20GG_HF by Diodes Incorporated

SF20GG_HF

Diodes Incorporated

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

EFFICIENCY

400 V

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

1.25 V

DO-15

O-PALF-W2

60 A

1

1

2

150 Cel

-55 Cel

2 A

PLASTIC/EPOXY

ROUND

LONG FORM

AEC-Q101

400 V

5 uA

.04 us

400 V

NO

WIRE

AXIAL

BY255-AQ by Diotec Semiconductor Ag

BY255-AQ

Diotec Semiconductor Ag

BY255-AQ by Diotec Semiconductor Ag is a single rectifier diode with a max reverse recovery time of 1.5 us and a max reverse current of 5 uA. It has a package shape of ROUND and can handle a reverse test voltage of 1300 V. This diode is commonly used in automotive applications due to its AEC-Q101 reference standard certification.

GENERAL PURPOSE

1000 V

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

1.1 V

DO-201

O-PALF-W2

110 A

1

1

2

150 Cel

-50 Cel

3 A

PLASTIC/EPOXY

ROUND

LONG FORM

NOT SPECIFIED

AEC-Q101

1300 V

5 uA

1.5 us

1300 V

NO

WIRE

AXIAL

NOT SPECIFIED

SB240-A52 by Diodes Incorporated

SB240-A52

Diodes Incorporated

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

FREE WHEELING DIODE

GENERAL PURPOSE

40 V

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

.55 V

DO-15

O-PALF-W2

e3

60 A

1

1

2

150 Cel

-55 Cel

2 A

PLASTIC/EPOXY

ROUND

LONG FORM

260

IEC-61000-4-2

40 V

150 uA

40 V

NO

SCHOTTKY

BRIGHT TIN

WIRE

AXIAL

JANTX1N5551/TR by Microchip Technology

JANTX1N5551/TR

Microchip Technology

JANTX1N5551/TR by Microchip Technology is a single rectifier diode with a max reverse recovery time of 2 us and a max output current of 3 A. It has a package body material of glass and can handle a max reverse test voltage of 400 V. This diode is commonly used in applications requiring high reliability and performance under extreme temperatures, such as military and aerospace systems.

HIGH RELIABILITY

GENERAL PURPOSE

440 V

ISOLATED

SINGLE

SILICON

RECTIFIER DIODE

1.2 V

O-LALF-W2

e0

100 A

1

1

2

175 Cel

-65 Cel

3 A

GLASS

ROUND

LONG FORM

MIL-19500

400 V

1 uA

2 us

400 V

NO

TIN LEAD

WIRE

AXIAL