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JANTX1N645-1TR

Microsemi

JANTX1N645-1TR by Microsemi

JANTX1N645-1TR by Microsemi is a rectifier diode with a max output current of 0.4A and a max repetitive peak reverse voltage of 225V. It is commonly used in applications requiring diodes and rectifiers, such as power supplies and electronic circuits.

Median Price

$12.100

Lifecycle Status

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1k+

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Nova Conductors

Japan . 62 parts In-Stock

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Vyrian

USA . 5,391 parts In-Stock

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Semicontronic

India . 1,031 parts In-Stock

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$0.010

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Aztec Data Supply Inc.

USA . 69 parts In-Stock

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$0.124

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Corohmni

South Africa . 70 parts In-Stock

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$0.149

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Ampacity Inc.

Singapore . 1,292 parts In-Stock

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Aranea Global

USA . 1,000 parts In-Stock

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$11.858

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$11.384

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Continental Prestige Electronics

USA . 311 parts In-Stock

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AZTECH Wire

Italy . 606 parts In-Stock

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Argo Parts USA

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Robosynatics

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Overview

Discover the JANTX1N645-1TR by Microsemi, a high-quality diode that offers numerous advantages for your electronic projects. Manufactured by Microsemi, a trusted leader in the industry, this diode ensures reliability and durability. It belongs to the category of diodes & rectifiers and is perfect for various applications. With its round shape and two terminals, it's easy to use and install. The JANTX1N645-1TR can operate at temperatures ranging from -65°C to 150°C, making it suitable for extreme environments. Its maximum power dissipation is 0.5W, providing optimal performance. Invest in this product today and experience the value, benefits, and advantages it brings to your designs.

Feature Benefit Bullets

Package Body Material: GLASS

The use of glass as the package body material ensures excellent durability and protection for the diode, making it suitable for various applications and environments.

Config: SINGLE

The single configuration of this diode provides a simple and straightforward design, making it easy to integrate into circuits and systems.

Package Shape: ROUND

The round package shape allows for easy mounting and installation, making it convenient to use in a wide range of electronic devices.

No. of Terminals: 2

With only two terminals, this diode offers a compact and efficient solution for circuit connections, making it ideal for space-constrained applications.

Package Style (Meter): LONG FORM

The long-form package style enables convenient measurement and evaluation of the diode's performance, facilitating accurate and reliable analysis.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150°C ensures the diode's stability and reliability even under demanding conditions, making it suitable for industrial and automotive applications.

Minimum Operating Temperature: -65 °C

The low minimum operating temperature of -65°C guarantees the diode's functionality and performance in extreme cold environments, expanding its usability in diverse settings.

Terminal Finish: TIN LEAD

The use of tin-lead as the terminal finish ensures excellent electrical conductivity and corrosion resistance, contributing to the diode's long-lasting performance and reliability.

Terminal Position: AXIAL

The axial terminal position facilitates easy insertion into circuit boards and allows for efficient thermal dissipation, enhancing the diode's overall stability and performance.

Case Connection: ISOLATED

The isolated case connection provides electrical separation from external components, reducing the risk of interference and ensuring optimal circuit operation.

Maximum Power Dissipation: 0.5 W

The high maximum power dissipation capability of 0.5W allows the diode to handle significant power levels without compromising its performance, making it suitable for demanding applications.

Reference Standard: MIL-19500

Complying with the MIL-19500 reference standard ensures the diode's adherence to strict quality control and reliability standards, bolstering its suitability for critical applications.

Diode Type: RECTIFIER DIODE

As a rectifier diode, this product is designed to efficiently convert alternating current (AC) to direct current (DC), making it an excellent choice for power supply and signal rectification purposes.

Maximum Output Current: 0.4 A

The high maximum output current of 0.4A allows the diode to handle substantial current loads without overheating, making it ideal for applications with significant power demands.

Terminal Form: WIRE

The wire terminal form enables easy and secure connections, simplifying the integration of the diode into circuits and ensuring reliable electrical contact.

Maximum Repetitive Peak Reverse Voltage: 225 V

With a high maximum repetitive peak reverse voltage of 225V, this diode can handle reverse voltage fluctuations effectively, making it suitable for various power-related applications.

Diode Element Material: SILICON

The use of silicon as the diode element material ensures high efficiency, low power loss, and excellent temperature stability, enhancing the overall performance and reliability of the diode.

Technical Specifications

Diodes & Rectifiers JANTX1N645-1TR attributes and parameters. Explore more Diodes & Rectifiers devices from Microsemi

Specs

Additional Features:

METALLURGICALLY BONDED

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

JEDEC-95 Code:

DO-35

JESD-30 Code:

O-LALF-W2

JESD-609 Code:

e0

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

.4 A

Package Body Material:

GLASS

Package Shape:

Package Style (Meter):

LONG FORM

Maximum Power Dissipation:

.5 W

Qualification:

Not Qualified

Reference Standard:

MIL-19500

Maximum Repetitive Peak Reverse Voltage:

225 V

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

JANTX1N645-1TR Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.70

SB

8541.10.00.70

Manufacturer Highlights

Microsemi

Microsemi Corporation, a wholly owned subsidiary of Microchip Technology Inc. (Nasdaq: MCHP), offers a comprehensive portfolio of semiconductor and system solutions for communications, defense & security, aerospace and industrial markets. Products include high-performance and radiation-hardened analog mixed-signal integrated circuits, FPGAs, SoCs and ASICs; power management products; timing and synchronization devices and precise time solutions, setting the world's standard for time; voice processing devices; RF solutions; discrete components; enterprise storage and communication solutions, security technologies and scalable anti-tamper products; Ethernet solutions; Power-over-Ethernet ICs and midspans; as well as custom design capabilities and services. Microsemi is headquartered in Aliso Viejo, California.

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