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PTVA042502ECV1R0XTMA1

Wolfspeed

PTVA042502ECV1R0XTMA1 by Wolfspeed

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Maximum Operating Temperature: 225 Cel; Transistor Element Material: SILICON;

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 873 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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10k+ parts

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873

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Digiode

USA . 249 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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10k+ parts

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249

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Modulus Dynamics

Lithuania . 15,360 parts In-Stock

1+ parts

$0.626

100+ parts

$0.601

1k+ parts

$0.576

10k+ parts

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15,360

$0.626

$0.601

$0.576

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Corphita

USA . 40 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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40

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Technical Specifications

RF Power Field Effect Transistors (FET) PTVA042502ECV1R0XTMA1 attributes and parameters. Explore more RF Power Field Effect Transistors (FET) devices from Wolfspeed

Specs

Case Connection:

SOURCE

Configuration:

Minimum DS Breakdown Voltage:

105 V

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JESD-30 Code:

R-CDFM-F4

No. of Elements:

2

No. of Terminals:

4

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

225 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Minimum Power Gain (Gp):

17.5 dB

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

PTVA042502ECV1R0XTMA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Wolfspeed

At Wolfspeed, we harness the power of Silicon Carbide to change the world for better. Our company represents more than 35 years of innovation, first as Cree, then as Cree | Wolfspeed, and now as Wolfspeed. Our Wolfspeed name is synonymous with Silicon Carbide leadership as we continue leading the charge into the future of innovation and manufacturing. We have assembled the best semiconductor team in the industry – a team that is uniquely suited to lead an industry-transforming, once-in-a-generation technology shift. We are the only player in the semiconductor industry with a fully commercialized, broad portfolio of the most field-tested Silicon Carbide and GaN-on-Silicon Carbide solutions on the market. Our ever-increasing portfolio of Wolfspeed products are engineered to enable our customers to deliver groundbreaking systems that do more while using energy more efficiently. We make a difference every day as we partner with our customers to create a more sustainable future for all – one powered by Silicon Carbide and our team’s passion and perseverance.

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