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SQD50P03-07_GE3

Vishay Intertechnology

SQD50P03-07_GE3 by Vishay Intertechnology

Vishay Intertechnology's SQD50P03-07_GE3 is a P-channel Power FET with 30V DS breakdown voltage, 50A max drain current, and 0.007 ohm on-resistance. Ideal for applications requiring high power efficiency in compact designs.

Median Price

$2.400

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 1,488 parts In-Stock

1+ parts

$0.296

100+ parts

$0.182

1k+ parts

$0.143

10k+ parts

$0.128

1,488

$0.296

$0.182

$0.143

$0.128

Farnell

UK . 1,488 parts In-Stock

1+ parts

$2.710

100+ parts

$1.340

1k+ parts

$1.070

10k+ parts

-

1,488

$2.710

$1.340

$1.070

-

Mouser Electronics

USA . 6,081 parts In-Stock

1+ parts

$3.690

100+ parts

$1.760

1k+ parts

$1.400

10k+ parts

$1.280

6,081

$3.690

$1.760

$1.400

$1.280

Element14

Singapore . 1,488 parts In-Stock

1+ parts

-

100+ parts

$2.090

1k+ parts

$1.630

10k+ parts

-

1,488

-

$2.090

$1.630

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 25,808 parts In-Stock

1+ parts

$1.280

100+ parts

-

1k+ parts

-

10k+ parts

-

25,808

$1.280

-

-

-

Nova Conductors

Japan . 37 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

37

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 3,140 parts In-Stock

1+ parts

$1.090

100+ parts

-

1k+ parts

-

10k+ parts

-

3,140

$1.090

-

-

-

Advanced Electronics

New Zealand . 10 parts In-Stock

1+ parts

$1.115

100+ parts

$1.015

1k+ parts

$0.914

10k+ parts

-

10

$1.115

$1.015

$0.914

-

Microchip USA

USA . 9,759 parts In-Stock

1+ parts

$8.209

100+ parts

-

1k+ parts

-

10k+ parts

-

9,759

$8.209

-

-

-

Netroflash

USA . 1,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,000

-

-

-

-

Overview

Experience the power and efficiency of the SQD50P03-07_GE3 Power Field Effect Transistor by Vishay Intertechnology. Crafted with precision and expertise, this P-CHANNEL transistor offers top-notch performance in a compact package. Its single configuration with built-in diode makes it ideal for a wide range of applications, from industrial to automotive. With a maximum drain current of 50 A and a low on-resistance of 0.007 ohm, this transistor provides exceptional reliability and durability. Trust Vishay Intertechnology to deliver quality and value with the SQD50P03-07_GE3.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and cost-effective material for packaging that protects the internal components of the FET.

Polarity or Channel Type: P-CHANNEL

Efficient for low power applications and can be easily controlled.

Configuration: SINGLE WITH BUILT-IN DIODE

Simplified circuit design with the inclusion of a built-in diode for reverse polarity protection.

Operating Mode: ENHANCEMENT MODE

Allows for easy control of turning on and off the FET, making it suitable for a wide range of applications.

Maximum Pulsed Drain Current (IDM): 200 A

Capable of handling high current spikes and surges, ideal for demanding applications.

Avalanche Energy Rating (EAS): 125 mJ

Can withstand high energy transients, ensuring reliability in harsh operating conditions.

Maximum Operating Temperature: 175 °C

Can operate in high-temperature environments without compromising performance.

Maximum Drain Current (ID): 50 A

Capable of carrying a significant amount of continuous current, suitable for various power applications.

Maximum Drain-Source On Resistance: 0.007 ohm

Low resistance allows for efficient power transfer and minimal power loss in the FET.

Technical Specifications

Power Field Effect Transistors (FET) SQD50P03-07_GE3 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Vishay Intertechnology

Specs

Avalanche Energy Rating (EAS):

125 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

30 V

Maximum Drain Current (ID):

50 A

Maximum Drain-Source On Resistance:

.007 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-252

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Pulsed Drain Current (IDM):

200 A

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Trade Compliance

SQD50P03-07_GE3 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

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