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SQD50P06-15L_GE3

Vishay Intertechnology

SQD50P06-15L_GE3 by Vishay Intertechnology

Vishay Intertechnology's SQD50P06-15L_GE3 is a P-channel FET with 60V DS breakdown voltage, 50A max drain current, and 0.0155 ohm on-resistance. Ideal for power applications requiring high current handling in enhancement mode operation.

Median Price

$1.508

Lifecycle Status

Suppliers In-Stock

16

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip1Stop

Japan . 1,851 parts In-Stock

1+ parts

$3.880

100+ parts

$1.780

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1,851

$3.880

$1.780

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Mouser Electronics

USA . 4,144 parts In-Stock

1+ parts

$3.890

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$1.800

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$1.600

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$1.520

4,144

$3.890

$1.800

$1.600

$1.520

DigiKey

USA . 1,445 parts In-Stock

1+ parts

$3.890

100+ parts

$1.793

1k+ parts

$1.599

10k+ parts

$1.306

1,445

$3.890

$1.793

$1.599

$1.306

TTI

USA . 22,000 parts In-Stock

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$1.300

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$1.300

TTI Europe

Germany . 22,000 parts In-Stock

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$1.061

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$1.061

RS (Exports)

UK . 2,840 parts In-Stock

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$1.715

2,840

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$1.715

Arrow

USA . 2,000 parts In-Stock

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$1.268

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Verical

USA . 2,000 parts In-Stock

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$1.268

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$1.268

Distributors (In-Stock)

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Nova Conductors

Japan . 26 parts In-Stock

1+ parts

$1.670

100+ parts

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26

$1.670

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Chip Stock

USA . 30,286 parts In-Stock

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Vyrian

USA . 10,564 parts In-Stock

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IBS Electronics

USA . 4,000 parts In-Stock

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$0.884

4,000

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$0.884

Cyclops Electronics Ltd

UK . 2,417 parts In-Stock

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2,417

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ACDS - Activité Composants Distribution Service

France . 2,000 parts In-Stock

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2,000

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NAC Semi

USA . 2,000 parts In-Stock

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$1.580

2,000

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$1.580

ComSIT Distribution GmbH

Germany . 8 parts In-Stock

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Distributors (Availability)

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Semicontronic

India . 23,097 parts In-Stock

1+ parts

$0.900

100+ parts

$0.878

1k+ parts

$0.873

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23,097

$0.900

$0.878

$0.873

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Ampacity Inc.

Singapore . 9,593 parts In-Stock

1+ parts

$0.900

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9,593

$0.900

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Corohmni

South Africa . 1,636 parts In-Stock

1+ parts

$1.030

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1,636

$1.030

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Aztec Data Supply Inc.

USA . 3,537 parts In-Stock

1+ parts

$1.450

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3,537

$1.450

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Advanced Electronics

New Zealand . 2,500 parts In-Stock

1+ parts

$1.466

100+ parts

$1.334

1k+ parts

$1.202

10k+ parts

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2,500

$1.466

$1.334

$1.202

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Continental Prestige Electronics

USA . 4,157 parts In-Stock

1+ parts

$1.670

100+ parts

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$1.637

4,157

$1.670

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$1.637

Argo Parts USA

USA . 2,687 parts In-Stock

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$1.670

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2,687

$1.670

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Netroflash

USA . 2,000 parts In-Stock

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$1.670

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$1.637

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$1.670

$1.637

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Microchip USA

USA . 7,168 parts In-Stock

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$9.486

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Assy Fe

Spain . 6,000 parts In-Stock

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GreenTree Electronics

Israel . 4,000 parts In-Stock

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Authorized Procurement Solutions

USA . 4,000 parts In-Stock

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Component Connect

USA . 4,000 parts In-Stock

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Cyclops Electronics Ltd (Excess)

UK . 2,000 parts In-Stock

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Glotronic Ltd.

UK . 1,600 parts In-Stock

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Lucentia Tech

USA . 600 parts In-Stock

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$2.026

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$2.026

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$2.026

600

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$2.026

$2.026

$2.026

Perfect Parts

USA . 560 parts In-Stock

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560

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Infinite Electronics LLP (Excess)

. 526 parts In-Stock

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S.R.D Solutions

India . 300 parts In-Stock

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Robosynatics

Brazil . 100 parts In-Stock

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100

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Kepictronics

USA . 34 parts In-Stock

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Overview

Power up your projects with the SQD50P06-15L_GE3 by Vishay Intertechnology! This high-quality P-channel Power Field Effect Transistor is a game-changer in the electronics industry. With a maximum drain current of 50A and a low on-resistance, this transistor delivers superior performance and efficiency. Whether you're working on power supplies, motor control, or battery management systems, the SQD50P06-15L_GE3 is the perfect choice for your applications. Trust Vishay Intertechnology for cutting-edge technology and reliable components that bring your designs to life.

Feature Benefit Bullets

Package Body Material:

PLASTIC/EPOXY - Provides durability and heat resistance, making it suitable for a variety of applications.

Polarity or Channel Type:

P-CHANNEL - Offers efficient current flow and control, enhancing performance and reliability.

Configuration:

SINGLE WITH BUILT-IN DIODE - Simplifies circuit design and saves space, making it ideal for compact electronic devices.

Surface Mount:

YES - Facilitates easy installation and allows for higher component density on circuit boards.

Minimum DS Breakdown Voltage:

60 V - Ensures protection against overvoltage situations, prolonging the product's lifespan.

Package Shape:

RECTANGULAR - Enables easy placement on circuit boards and efficient heat dissipation.

Terminal Form:

GULL WING - Provides secure solder connections and ease of handling during assembly.

Operating Mode:

ENHANCEMENT MODE - Allows for improved control over current flow, enhancing overall performance.

Maximum Pulsed Drain Current (IDM):

200 A - Enables handling of high peak currents, making it suitable for power-intensive applications.

Avalanche Energy Rating (EAS):

135 mJ - Provides protection against voltage spikes and enhances the product's reliability.

No. of Terminals:

2 - Simplifies circuit connection and reduces complexity in wiring.

Package Style (Meter):

SMALL OUTLINE - Saves space and allows for compact circuit layout in limited areas.

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR - Offers high efficiency and reliable performance in various operating conditions.

Maximum Operating Temperature:

175 °C - Ensures stable operation even in high-temperature environments, increasing product versatility.

Transistor Element Material:

SILICON - Provides high conductivity and efficiency, ensuring optimal performance.

Terminal Finish:

MATTE TIN - Provides excellent corrosion resistance and enhances solder joint reliability.

Maximum Drain Current (ID):

50 A - Allows for handling of high current loads, suitable for power applications.

Maximum Drain-Source On Resistance:

0.0155 ohm - Provides low resistance for efficient current flow and reduced power loss.

Terminal Position:

SINGLE - Simplifies circuit design and assembly, increasing overall efficiency.

Case Connection:

DRAIN - Facilitates efficient heat dissipation and protects the transistor during operation.

Maximum Time At Peak Reflow Temperature (s):

30 - Ensures proper soldering and component integrity during assembly.

Peak Reflow Temperature °C:

260 - Allows for high-temperature soldering, ensuring secure connections and reliability.

Technical Specifications

Power Field Effect Transistors (FET) SQD50P06-15L_GE3 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Vishay Intertechnology

Specs

Avalanche Energy Rating (EAS):

135 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (ID):

50 A

Maximum Drain-Source On Resistance:

.0155 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-252

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Pulsed Drain Current (IDM):

200 A

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Trade Compliance

SQD50P06-15L_GE3 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

Category top products 20

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