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SQD50P04-09L-GE3

Vishay Intertechnology

SQD50P04-09L-GE3 by Vishay Intertechnology

Vishay Intertechnology's SQD50P04-09L-GE3 is a P-channel power FET with 40V DS breakdown voltage, 100A IDM, and 0.0094 ohm RDS(on). Ideal for applications requiring high drain current handling in enhancement mode operation. Suitable for surface mount designs due to its small outline package style.

Median Price

$1.360

Lifecycle Status

Suppliers In-Stock

12

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 22,335 parts In-Stock

1+ parts

$3.890

100+ parts

$1.800

1k+ parts

$1.600

10k+ parts

$1.490

22,335

$3.890

$1.800

$1.600

$1.490

DigiKey

USA . 5,522 parts In-Stock

1+ parts

$3.890

100+ parts

$1.793

1k+ parts

$1.599

10k+ parts

$1.306

5,522

$3.890

$1.793

$1.599

$1.306

Arrow

USA . 2,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

$1.302

2,000

-

-

-

$1.302

TTI

USA . 2,000 parts In-Stock

1+ parts

-

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$1.310

2,000

-

-

-

$1.310

Future Electronics

Canada . 2,000 parts In-Stock

1+ parts

-

100+ parts

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$1.410

2,000

-

-

-

$1.410

Verical

USA . 2,000 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

-

10k+ parts

$1.302

2,000

-

-

-

$1.302

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 150 parts In-Stock

1+ parts

$1.536

100+ parts

-

1k+ parts

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10k+ parts

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150

$1.536

-

-

-

Ozdisan Elektronik

Türkiye . 1,686 parts In-Stock

1+ parts

$57.130

100+ parts

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1,686

$57.130

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Vyrian

USA . 6,530 parts In-Stock

1+ parts

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6,530

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NAC Semi

USA . 4,000 parts In-Stock

1+ parts

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100+ parts

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$4.350

4,000

-

-

-

$4.350

IBS Electronics

USA . 2,000 parts In-Stock

1+ parts

-

100+ parts

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10k+ parts

$3.128

2,000

-

-

-

$3.128

Bristol Electronics

USA . 38 parts In-Stock

1+ parts

-

100+ parts

$1.688

1k+ parts

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38

-

$1.688

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aztec Data Supply Inc.

USA . 1,823 parts In-Stock

1+ parts

$0.450

100+ parts

-

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1,823

$0.450

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Ampacity Inc.

Singapore . 6,430 parts In-Stock

1+ parts

$1.050

100+ parts

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6,430

$1.050

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Corohmni

South Africa . 237 parts In-Stock

1+ parts

$1.472

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237

$1.472

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Argo Parts USA

USA . 4,828 parts In-Stock

1+ parts

$1.536

100+ parts

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4,828

$1.536

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Continental Prestige Electronics

USA . 1,253 parts In-Stock

1+ parts

$1.536

100+ parts

-

1k+ parts

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10k+ parts

$1.505

1,253

$1.536

-

-

$1.505

Netroflash

USA . 100 parts In-Stock

1+ parts

$1.536

100+ parts

-

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100

$1.536

-

-

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Andel Nordic

Denmark . 3,689 parts In-Stock

1+ parts

$3.772

100+ parts

-

1k+ parts

$3.621

10k+ parts

$3.621

3,689

$3.772

-

$3.621

$3.621

Microchip USA

USA . 2,024 parts In-Stock

1+ parts

$9.486

100+ parts

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2,024

$9.486

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RC Electronics

USA . 30,026 parts In-Stock

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30,026

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Assy Fe

Spain . 1,000 parts In-Stock

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1,000

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Overview

Unlock the power of innovation with Vishay Intertechnology's SQD50P04-09L-GE3 P-Channel Power Field Effect Transistor. Built with quality in mind, this single configuration transistor offers unmatched reliability and performance in a compact package. Ideal for a variety of applications, this FET provides enhanced power management capabilities, making it the perfect choice for your next project. Experience the value and benefits that only Vishay Intertechnology can deliver. Choose the SQD50P04-09L-GE3 for cutting-edge solutions that set you apart from the competition.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the FET, making it suitable for various applications.

Polarity or Channel Type: P-CHANNEL

Offers efficient current flow and control, making the FET suitable for power management applications.

Maximum Power Dissipation (Abs): 136 W

With a high power dissipation rating, this FET can handle large amounts of power without overheating, ensuring reliable operation.

Maximum Operating Temperature: 175 °C

Capable of operating at high temperatures, making it ideal for applications where heat dissipation is a concern.

Maximum Drain-Source On Resistance: 0.0094 ohm

Low on-resistance leads to reduced power loss and increased efficiency in power management applications.

Technical Specifications

Power Field Effect Transistors (FET) SQD50P04-09L-GE3 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Vishay Intertechnology

Specs

Avalanche Energy Rating (EAS):

125 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

40 V

Maximum Drain Current (Abs) (ID):

50 A

Maximum Drain Current (ID):

50 A

Maximum Drain-Source On Resistance:

.0094 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-252

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

100 A

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Trade Compliance

SQD50P04-09L-GE3 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

Category top products 20

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