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SQD50P08-28_GE3

Vishay Intertechnology

SQD50P08-28_GE3 by Vishay Intertechnology

Vishay Intertechnology's SQD50P08-28_GE3 is a P-CHANNEL FET with 80V DS Breakdown Voltage, 48A ID, and 0.028 ohm RDS(on). Ideal for power applications in small outline packages, it operates in enhancement mode with 190A IDM and 100mJ EAS.

Median Price

$3.460

Lifecycle Status

Suppliers In-Stock

12

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 2,000 parts In-Stock

1+ parts

$1.032

100+ parts

$0.764

1k+ parts

$0.698

10k+ parts

-

2,000

$1.032

$0.764

$0.698

-

DigiKey

USA . 3,691 parts In-Stock

1+ parts

$3.460

100+ parts

$1.575

1k+ parts

$1.363

10k+ parts

$1.114

3,691

$3.460

$1.575

$1.363

$1.114

Mouser Electronics

USA . 651 parts In-Stock

1+ parts

$3.460

100+ parts

$1.580

1k+ parts

$1.370

10k+ parts

$1.300

651

$3.460

$1.580

$1.370

$1.300

Newark

USA . 14,999 parts In-Stock

1+ parts

$3.560

100+ parts

$1.630

1k+ parts

$1.410

10k+ parts

-

14,999

$3.560

$1.630

$1.410

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Element14

Singapore . 17,093 parts In-Stock

1+ parts

$3.950

100+ parts

$2.400

1k+ parts

$1.870

10k+ parts

-

17,093

$3.950

$2.400

$1.870

-

Farnell

UK . 17,093 parts In-Stock

1+ parts

-

100+ parts

$1.320

1k+ parts

$1.020

10k+ parts

-

17,093

-

$1.320

$1.020

-

Verical

USA . 2,000 parts In-Stock

1+ parts

-

100+ parts

$0.764

1k+ parts

$0.698

10k+ parts

-

2,000

-

$0.764

$0.698

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 37,870 parts In-Stock

1+ parts

$1.320

100+ parts

-

1k+ parts

-

10k+ parts

-

37,870

$1.320

-

-

-

Chip Stock

USA . 22,249 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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22,249

-

-

-

-

ComSIT USA

USA . 1,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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1,500

-

-

-

-

Nova Conductors

Japan . 35 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

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35

-

-

-

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ComSIT Distribution GmbH

Germany . 4 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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4

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 350 parts In-Stock

1+ parts

$1.571

100+ parts

-

1k+ parts

-

10k+ parts

-

350

$1.571

-

-

-

Continental Prestige Electronics

USA . 17,700 parts In-Stock

1+ parts

$2.520

100+ parts

$1.620

1k+ parts

$1.550

10k+ parts

-

17,700

$2.520

$1.620

$1.550

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Microchip USA

USA . 6,981 parts In-Stock

1+ parts

$8.209

100+ parts

-

1k+ parts

-

10k+ parts

-

6,981

$8.209

-

-

-

RC Electronics

USA . 16,200 parts In-Stock

1+ parts

-

100+ parts

$1.700

1k+ parts

$1.600

10k+ parts

$1.570

16,200

-

$1.700

$1.600

$1.570

Perfect Parts

USA . 6,720 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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6,720

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-

-

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Netroflash

USA . 100 parts In-Stock

1+ parts

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100+ parts

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100

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-

Overview

Power up your electronic devices with the high-quality SQD50P08-28_GE3 Power Field Effect Transistor by Vishay Intertechnology. Designed with precision and reliability in mind, this P-CHANNEL transistor offers enhanced performance and efficiency for a wide range of applications. From power supplies to motor control systems, this versatile component provides value, benefits, and advantages that will elevate your projects to the next level. Trust Vishay Intertechnology for superior quality and innovation in semiconductor technology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation and protection for the transistor, ensuring reliability and durability in various operating conditions.

Polarity or Channel Type: P-CHANNEL

P-channel FETs typically have lower on-resistance and can be a good choice for certain circuit designs.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode simplifies circuit design and can provide added convenience for users.

Surface Mount: YES

Surface mount technology allows for easy and efficient PCB assembly, saving space and reducing production costs.

Minimum DS Breakdown Voltage: 80 V

The high breakdown voltage allows the FET to handle high voltages, making it suitable for a wide range of applications.

Maximum Pulsed Drain Current (IDM): 190 A

High pulsed current rating ensures the FET can handle transient overloads or surges without damage.

Avalanche Energy Rating (EAS): 100 mJ

Good avalanche energy rating means the FET can withstand energy spikes or surges without breaking down.

Maximum Drain Current (ID): 48 A

High drain current rating allows the FET to handle high continuous currents, making it suitable for power applications.

Maximum Drain-Source On Resistance: 0.028 ohm

Low on-resistance leads to minimal power losses and efficient operation of the FET.

Technical Specifications

Power Field Effect Transistors (FET) SQD50P08-28_GE3 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Vishay Intertechnology

Specs

Avalanche Energy Rating (EAS):

100 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

80 V

Maximum Drain Current (ID):

48 A

Maximum Drain-Source On Resistance:

.028 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-252

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Pulsed Drain Current (IDM):

190 A

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Trade Compliance

SQD50P08-28_GE3 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

Category top products 20

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