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SM6T7V5AHE3_A/H

Vishay Intertechnology

SM6T7V5AHE3_A/H by Vishay Intertechnology

Vishay Intertechnology's SM6T7V5AHE3_A/H is a single avalanche diode with 600W power dissipation, 7.51V breakdown voltage, and 500uA reverse current. Ideal for transient suppression in automotive electronics due to its AEC-Q101 compliance and unidirectional polarity.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,363 parts In-Stock

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3,363

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Nova Conductors

Japan . 750 parts In-Stock

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750

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 1,267 parts In-Stock

1+ parts

$2.010

100+ parts

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1,267

$2.010

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AZTECH Wire

Italy . 551 parts In-Stock

1+ parts

$12.162

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551

$12.162

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Bastille Electronics

Australia . 100 parts In-Stock

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100

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Overview

Upgrade your electronic systems with the Vishay Intertechnology SM6T7V5AHE3_A/H Transient Suppression Device. With a maximum power dissipation of 600W and a nominal breakdown voltage of 7.51V, this device offers unparalleled protection against voltage spikes. Perfect for automotive, industrial, and consumer electronics applications, this single-configured diode features a small outline package body material and matte tin terminal finish for easy integration. Trust in Vishay Intertechnology's reputation for quality and reliability to safeguard your devices and ensure smooth operation. Elevate your designs with the SM6T7V5AHE3_A/H today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material ensures a durable and reliable housing for the transient suppression device, protecting it from environmental factors and enhancing its longevity.

Maximum Non Repetitive Peak Reverse Power Dissipation: 600 W

With a high maximum power dissipation capacity, this product can efficiently handle sudden spikes in voltage, providing effective transient suppression and protecting connected devices.

Nominal Breakdown Voltage: 7.51 V

The nominal breakdown voltage of 7.51 V indicates the voltage at which the device starts conducting, effectively suppressing transient voltage spikes above this threshold.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150°C ensures that the device can function effectively even in demanding environmental conditions without compromising its performance.

Reference Standard: AEC-Q101

Compliance with the AEC-Q101 standard ensures that this product meets stringent automotive industry requirements, making it a reliable choice for automotive applications where transient suppression is crucial.

Technical Specifications

Transient Suppression Devices SM6T7V5AHE3_A/H attributes and parameters. Explore more Transient Suppression Devices devices from Vishay Intertechnology

Specs

Additional Features:

EXCELLENT CLAMPING CAPABILITY

Maximum Breakdown Voltage:

7.88 V

Minimum Breakdown Voltage:

7.13 V

Nominal Breakdown Voltage:

7.51 V

Maximum Clamping Voltage:

14.5 V

Config:

SINGLE

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-214AA

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

600 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

5 W

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

6.4 V

Maximum Reverse Current:

500 uA

Reverse Test Voltage:

6.4 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

SM6T7V5AHE3_A/H Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

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