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SM6T6V8A-E3/5B

Vishay Intertechnology

SM6T6V8A-E3/5B by Vishay Intertechnology

Vishay Intertechnology's SM6T6V8A-E3/5B is a single avalanche diode with 600W power dissipation, 6.8V breakdown voltage, and 150°C max operating temp. Ideal for transient suppression in applications requiring unidirectional polarity protection at up to 7.14V breakdown voltage and 13.4V clamping voltage.

Median Price

$0.324

Lifecycle Status

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6

In-Stock Inventory

1k+

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Adafruit Industries

USA . 20 parts In-Stock

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$0.089

100+ parts

$0.084

1k+ parts

$0.084

10k+ parts

-

20

$0.089

$0.084

$0.084

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Mouser Electronics

USA . 7,528 parts In-Stock

1+ parts

$0.560

100+ parts

$0.261

1k+ parts

$0.177

10k+ parts

$0.131

7,528

$0.560

$0.261

$0.177

$0.131

DigiKey

USA . 4,202 parts In-Stock

1+ parts

$0.770

100+ parts

$0.306

1k+ parts

$0.209

10k+ parts

-

4,202

$0.770

$0.306

$0.209

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Arrow

USA . 32,000 parts In-Stock

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-

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10k+ parts

$0.063

32,000

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-

-

$0.063

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Nova Conductors

Japan . 22 parts In-Stock

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$0.172

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22

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Vyrian

USA . 4,187 parts In-Stock

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4,187

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Aztec Data Supply Inc.

USA . 627 parts In-Stock

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$0.040

100+ parts

-

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-

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627

$0.040

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Ampacity Inc.

Singapore . 11,049 parts In-Stock

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$0.064

100+ parts

-

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11,049

$0.064

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Semicontronic

India . 10,754 parts In-Stock

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$0.064

100+ parts

$0.062

1k+ parts

$0.062

10k+ parts

-

10,754

$0.064

$0.062

$0.062

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Advanced Electronics

New Zealand . 20 parts In-Stock

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$0.089

100+ parts

$0.084

1k+ parts

$0.084

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20

$0.089

$0.084

$0.084

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Corohmni

South Africa . 693 parts In-Stock

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$0.119

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Continental Prestige Electronics

USA . 2,265 parts In-Stock

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$0.170

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$0.166

2,265

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$0.166

Argo Parts USA

USA . 1,474 parts In-Stock

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$0.170

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$0.164

1,474

$0.170

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$0.164

Netroflash

USA . 1,000 parts In-Stock

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$0.172

100+ parts

-

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$0.163

10k+ parts

$0.160

1,000

$0.172

-

$0.163

$0.160

Modulus Dynamics

Lithuania . 55 parts In-Stock

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$0.191

100+ parts

$0.189

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$0.183

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55

$0.191

$0.189

$0.183

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Robosynatics

Brazil . 100 parts In-Stock

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100+ parts

$4.380

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$4.380

10k+ parts

$4.380

100

-

$4.380

$4.380

$4.380

Lucentia Tech

USA . 100 parts In-Stock

1+ parts

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100+ parts

$4.380

1k+ parts

$4.380

10k+ parts

$4.380

100

-

$4.380

$4.380

$4.380

Overview

Guard against electrical surges with the Vishay Intertechnology SM6T6V8A-E3/5B transient suppression device. Built to the highest quality standards, this single-config device offers maximum protection for your electronics. With a nominal breakdown voltage of 6.8V and a maximum clamping voltage of 13.4V, this diode is perfect for applications where reliability is key. Trust Vishay Intertechnology to provide you with the best in transient suppression devices.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used for the package body provides durability and protection for the internal components of the device.

Maximum Non Repetitive Peak Reverse Power Dissipation: 600 W

With a high power dissipation capacity, this device can effectively handle transient voltage spikes without being damaged.

Nominal Breakdown Voltage: 6.8 V

The nominal breakdown voltage of 6.8 V ensures that the device activates and starts suppressing voltage spikes at the specified level to protect connected equipment.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150°C allows this device to be used in a wide range of environments without overheating.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

Being a trans voltage suppressor diode, this device is specifically designed to provide effective transient voltage suppression, ensuring protection for sensitive electronics.

Technical Specifications

Transient Suppression Devices SM6T6V8A-E3/5B attributes and parameters. Explore more Transient Suppression Devices devices from Vishay Intertechnology

Specs

Additional Features:

EXCELLENT CLAMPING CAPABILITY ,HIGH RELIABILITY

Maximum Breakdown Voltage:

7.14 V

Minimum Breakdown Voltage:

6.45 V

Nominal Breakdown Voltage:

6.8 V

Case Connection:

CATHODE

Maximum Clamping Voltage:

13.4 V

Config:

SINGLE

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-214AA

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

600 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

5 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

5.8 V

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

SM6T6V8A-E3/5B Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

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