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SM6T6V8AHM3_A/I

Vishay Intertechnology

SM6T6V8AHM3_A/I by Vishay Intertechnology

Vishay Intertechnology's SM6T6V8AHM3_A/I is a 600W TRANS VOLTAGE SUPPRESSOR DIODE with 6.8V Breakdown Voltage, ideal for transient suppression applications. It features UNIDIRECTIONAL polarity, AVALANCHE technology, and Matte Tin finish. Operating from -65 to 150 °C, it offers a max Clamping Voltage of 13.4V in a SMALL OUTLINE package suitable for surface mount assembly.

Median Price

-

Lifecycle Status

EOL

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 15,861 parts In-Stock

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Nova Conductors

Japan . 72 parts In-Stock

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Advanced Electronics

New Zealand . 186 parts In-Stock

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$0.076

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$0.072

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$0.072

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Corohmni

South Africa . 738 parts In-Stock

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$0.104

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Aztec Data Supply Inc.

USA . 4,377 parts In-Stock

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Semicontronic

India . 759 parts In-Stock

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$0.985

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$0.980

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Ampacity Inc.

Singapore . 151 parts In-Stock

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$1.010

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AZTECH Wire

Italy . 621 parts In-Stock

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$8.328

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Robosynatics

Brazil . 5,000 parts In-Stock

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Lucentia Tech

USA . 5,000 parts In-Stock

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Continental Prestige Electronics

USA . 2,462 parts In-Stock

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Argo Parts USA

USA . 607 parts In-Stock

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Modulus Dynamics

Lithuania . 550 parts In-Stock

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Bastille Electronics

Australia . 23 parts In-Stock

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Overview

Looking for top-notch transient suppression devices? Look no further than the SM6T6V8AHM3_A/I from Vishay Intertechnology. With a reputation for excellence in manufacturing, Vishay Intertechnology delivers exceptional quality and performance in every product. Designed for a wide range of applications, this device offers reliable protection against voltage spikes, ensuring the safety and longevity of your electronics. Trust Vishay Intertechnology to provide the value, benefits, and advantages you need for peace of mind in your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the device lightweight and durable, ideal for various applications.

Config: SINGLE

The single configuration simplifies installation and reduces the risk of errors in connecting multiple devices.

Surface Mount: YES

Being surface mountable makes it easy to integrate into PCBs, saving space and improving overall system efficiency.

Maximum Non Repetitive Peak Reverse Power Dissipation: 600 W

With a high power dissipation capacity, this device can effectively handle sudden voltage spikes or surges.

Nominal Breakdown Voltage: 6.8 V

The specific breakdown voltage ensures excellent protection against overvoltage conditions within the specified range.

Maximum Reverse Current: 1000 uA

Low reverse current minimizes power loss and enhances the device's efficiency in transient suppression.

Package Shape: RECTANGULAR

The rectangular shape allows for easy placement and mounting within electronic systems.

Reverse Test Voltage: 5.8 V

The defined reverse test voltage helps ensure the device can handle reverse polarity situations effectively.

No. of Terminals: 2

Having only two terminals simplifies installation and reduces the risk of wiring errors.

Package Style (Meter): SMALL OUTLINE

The small outline package style is space-efficient and compatible with automated assembly processes.

Technical Specifications

Transient Suppression Devices SM6T6V8AHM3_A/I attributes and parameters. Explore more Transient Suppression Devices devices from Vishay Intertechnology

Specs

Additional Features:

EXCELLENT CLAMPING CAPABILITY

Maximum Breakdown Voltage:

7.14 V

Minimum Breakdown Voltage:

6.45 V

Nominal Breakdown Voltage:

6.8 V

Maximum Clamping Voltage:

13.4 V

Config:

SINGLE

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-214AA

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

600 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

5 W

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

5.8 V

Maximum Reverse Current:

1000 uA

Reverse Test Voltage:

5.8 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

SM6T6V8AHM3_A/I Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

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