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SM6T6V8AHM3_A/H

Vishay Intertechnology

SM6T6V8AHM3_A/H by Vishay Intertechnology

Vishay Intertechnology's SM6T6V8AHM3_A/H is a single avalanche diode with 600W power dissipation, 6.8V breakdown voltage, and 1000uA reverse current. Ideal for transient suppression in automotive applications due to AEC-Q101 compliance and unidirectional polarity.

Median Price

$0.142

Lifecycle Status

EOL

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Adafruit Industries

USA . 20 parts In-Stock

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$0.142

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$0.135

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$0.135

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Vyrian

USA . 9,753 parts In-Stock

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Nova Conductors

Japan . 900 parts In-Stock

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900

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Distributors (Availability)

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Ampacity Inc.

Singapore . 20 parts In-Stock

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$0.121

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20

$0.121

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Semicontronic

India . 20 parts In-Stock

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$0.121

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$0.118

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Aztec Data Supply Inc.

USA . 2,153 parts In-Stock

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$0.131

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Corohmni

South Africa . 247 parts In-Stock

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Advanced Electronics

New Zealand . 20 parts In-Stock

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AZTECH Wire

Italy . 203 parts In-Stock

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$5.025

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Continental Prestige Electronics

USA . 3,697 parts In-Stock

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Argo Parts USA

USA . 155 parts In-Stock

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Robosynatics

Brazil . 100 parts In-Stock

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$0.882

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Lucentia Tech

USA . 100 parts In-Stock

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$0.882

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Modulus Dynamics

Lithuania . 46 parts In-Stock

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Bastille Electronics

Australia . 10 parts In-Stock

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Overview

Protect your electronics and ensure their longevity with Vishay Intertechnology's SM6T6V8AHM3_A/H Transient Suppression Device. Trusted by industry professionals, this single-config device offers a clamping voltage of 13.4 V and a maximum power dissipation of 600 W to safeguard against voltage spikes. Ideal for automotive, industrial, and consumer applications, this diode is designed for reliability and performance in extreme conditions. Invest in the best for your equipment with Vishay Intertechnology's cutting-edge technology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides durability and protection, making the device suitable for various environments and applications.

Maximum Non Repetitive Peak Reverse Power Dissipation: 600 W

High power dissipation capability ensures the device can handle sudden surges or spikes in voltage effectively, protecting the connected circuitry.

Nominal Breakdown Voltage: 6.8 V

The specified breakdown voltage of 6.8 V ensures that the device activates and shunts excess voltage away from the circuit when necessary, preventing damage.

Maximum Operating Temperature: 150 °C

With a high operating temperature range of up to 150°C, the device can withstand elevated temperatures without compromising performance.

Terminal Finish: Matte Tin (Sn)

Matte Tin finish on the terminals provides good conductivity and solderability, ensuring a reliable electrical connection during installation.

Technical Specifications

Transient Suppression Devices SM6T6V8AHM3_A/H attributes and parameters. Explore more Transient Suppression Devices devices from Vishay Intertechnology

Specs

Additional Features:

EXCELLENT CLAMPING CAPABILITY

Maximum Breakdown Voltage:

7.14 V

Minimum Breakdown Voltage:

6.45 V

Nominal Breakdown Voltage:

6.8 V

Maximum Clamping Voltage:

13.4 V

Config:

SINGLE

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-214AA

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

600 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

5 W

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

5.8 V

Maximum Reverse Current:

1000 uA

Reverse Test Voltage:

5.8 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

SM6T6V8AHM3_A/H Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

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