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SM6T6V8AHE3_A/H

Vishay Intertechnology

SM6T6V8AHE3_A/H by Vishay Intertechnology

Vishay Intertechnology's SM6T6V8AHE3_A/H is a single avalanche diode with 600W power dissipation, 6.8V breakdown voltage, and 1000uA reverse current. Ideal for transient suppression in automotive applications due to AEC-Q101 compliance and unidirectional polarity.

Median Price

$0.107

Lifecycle Status

EOL

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Adafruit Industries

USA . 350 parts In-Stock

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$0.107

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$0.102

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$0.102

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350

$0.107

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$0.102

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Distributors (In-Stock)

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Vyrian

USA . 15,208 parts In-Stock

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Nova Conductors

Japan . 150 parts In-Stock

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Aztec Data Supply Inc.

USA . 2,279 parts In-Stock

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$0.043

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$0.043

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Ampacity Inc.

Singapore . 350 parts In-Stock

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$0.091

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$0.091

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Semicontronic

India . 119 parts In-Stock

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$0.091

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$0.089

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$0.088

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Advanced Electronics

New Zealand . 350 parts In-Stock

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$0.107

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$0.102

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350

$0.107

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Corohmni

South Africa . 364 parts In-Stock

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$0.110

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AZTECH Wire

Italy . 271 parts In-Stock

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$12.240

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Argo Parts USA

USA . 3,247 parts In-Stock

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Continental Prestige Electronics

USA . 2,120 parts In-Stock

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Bastille Electronics

Australia . 500 parts In-Stock

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Robosynatics

Brazil . 500 parts In-Stock

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$16.241

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$16.241

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$16.241

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Lucentia Tech

USA . 500 parts In-Stock

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$16.241

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$16.241

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$16.241

Modulus Dynamics

Lithuania . 50 parts In-Stock

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Overview

Unleash the power of reliable transient suppression with Vishay Intertechnology's SM6T6V8AHE3_A/H. Designed for optimal performance and durability, this single-configured device offers a maximum non-repetitive peak reverse power dissipation of 600W and nominal breakdown voltage of 6.8V. Perfect for a wide range of applications, including automotive, industrial, and telecommunications, this TRANS VOLTAGE SUPPRESSOR DIODE is built to provide superior protection against voltage spikes. Trust Vishay Intertechnology for high-quality components that deliver peace of mind and unmatched performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides durability and resistance to environmental factors, ensuring long-term reliability.

Maximum Non Repetitive Peak Reverse Power Dissipation: 600 W

High power dissipation capability allows the device to efficiently handle transient surges without damage, increasing overall system protection.

Nominal Breakdown Voltage: 6.8 V

The specific breakdown voltage ensures that the device activates at the desired voltage level, protecting downstream components effectively.

Maximum Operating Temperature: 150 °C

Wide operating temperature range allows for use in various environments, making the device versatile and reliable.

Reverse Test Voltage: 5.8 V

The low reverse test voltage provides effective protection against reverse polarity events, safeguarding the circuit from damage.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

The Trans Voltage Suppressor Diode type ensures efficient suppression of voltage spikes, enhancing system reliability and performance.

Technical Specifications

Transient Suppression Devices SM6T6V8AHE3_A/H attributes and parameters. Explore more Transient Suppression Devices devices from Vishay Intertechnology

Specs

Additional Features:

EXCELLENT CLAMPING CAPABILITY

Maximum Breakdown Voltage:

7.14 V

Minimum Breakdown Voltage:

6.45 V

Nominal Breakdown Voltage:

6.8 V

Maximum Clamping Voltage:

13.4 V

Config:

SINGLE

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-214AA

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

600 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

5 W

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

5.8 V

Maximum Reverse Current:

1000 uA

Reverse Test Voltage:

5.8 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

SM6T6V8AHE3_A/H Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

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