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SM6T6V8CAHM3_A/H

Vishay Intertechnology

SM6T6V8CAHM3_A/H by Vishay Intertechnology

Vishay Intertechnology's SM6T6V8CAHM3_A/H is a single bidirectional avalanche diode with 600W power dissipation, 6.8V breakdown voltage, and 2000uA reverse current. Ideal for transient suppression in automotive applications due to AEC-Q101 standard compliance and compact small outline package design.

Median Price

$0.108

Lifecycle Status

EOL

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3

In-Stock Inventory

1k+

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Adafruit Industries

USA . 97 parts In-Stock

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$0.108

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Vyrian

USA . 12,549 parts In-Stock

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Nova Conductors

Japan . 55 parts In-Stock

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Aztec Data Supply Inc.

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Semicontronic

India . 67 parts In-Stock

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$0.090

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Corohmni

South Africa . 13 parts In-Stock

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Advanced Electronics

New Zealand . 97 parts In-Stock

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AZTECH Wire

Italy . 897 parts In-Stock

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Continental Prestige Electronics

USA . 5,682 parts In-Stock

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Argo Parts USA

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Bastille Electronics

Australia . 100 parts In-Stock

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Modulus Dynamics

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Robosynatics

Brazil . 10 parts In-Stock

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Lucentia Tech

USA . 10 parts In-Stock

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Overview

Looking to safeguard your electronic devices from voltage surges? Look no further than the Vishay Intertechnology SM6T6V8CAHM3_A/H Transient Suppression Device. With a maximum clamping voltage of 13.4V and a nominal breakdown voltage of 6.8V, this diode offers top-notch protection against transient voltage spikes. Manufactured by industry leader Vishay Intertechnology, known for their high-quality components, this product is ideal for a wide range of applications. Ensure the safety and longevity of your electronics with the SM6T6V8CAHM3_A/H.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the internal components of the device.

Maximum Non Repetitive Peak Reverse Power Dissipation: 600 W

Can handle high levels of power spikes or surges, ensuring reliable protection for sensitive electronic equipment.

Nominal Breakdown Voltage: 6.8 V

Ideal breakdown voltage for effectively clamping transient voltages and protecting connected devices.

Maximum Operating Temperature: 150 °C

Can operate effectively in high temperature environments without compromising performance.

Reference Standard: AEC-Q101

Compliance with automotive industry standards ensures high quality and reliability for automotive applications.

Technical Specifications

Transient Suppression Devices SM6T6V8CAHM3_A/H attributes and parameters. Explore more Transient Suppression Devices devices from Vishay Intertechnology

Specs

Additional Features:

EXCELLENT CLAMPING CAPABILITY

Maximum Breakdown Voltage:

7.14 V

Minimum Breakdown Voltage:

6.45 V

Nominal Breakdown Voltage:

6.8 V

Maximum Clamping Voltage:

13.4 V

Config:

SINGLE

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-214AA

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

600 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

BIDIRECTIONAL

Maximum Power Dissipation:

5 W

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

5.8 V

Maximum Reverse Current:

2000 uA

Reverse Test Voltage:

5.8 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

SM6T6V8CAHM3_A/H Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

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