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SI9435BDY-T1-GE3

Vishay Intertechnology

SI9435BDY-T1-GE3 by Vishay Intertechnology

Vishay Intertechnology's SI9435BDY-T1-GE3 is a P-CHANNEL FET with 30V DS Breakdown Voltage, 4.1A ID, and 0.042 ohm RDS(ON). Ideal for small signal applications, it operates in Enhancement Mode with a max temperature of 150°C.

Median Price

$0.439

Lifecycle Status

Suppliers In-Stock

12

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 2,710 parts In-Stock

1+ parts

$0.300

100+ parts

$0.300

1k+ parts

$0.300

10k+ parts

-

2,710

$0.300

$0.300

$0.300

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Farnell

UK . 1,888 parts In-Stock

1+ parts

$0.825

100+ parts

$0.523

1k+ parts

$0.488

10k+ parts

-

1,888

$0.825

$0.523

$0.488

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Element14

Singapore . 1,888 parts In-Stock

1+ parts

$1.240

100+ parts

$0.916

1k+ parts

$0.621

10k+ parts

$0.544

1,888

$1.240

$0.916

$0.621

$0.544

Mouser Electronics

USA . 3,710 parts In-Stock

1+ parts

-

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$0.338

3,710

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$0.338

Verical

USA . 2,710 parts In-Stock

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-

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$0.439

10k+ parts

$0.425

2,710

-

-

$0.439

$0.425

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 79,535 parts In-Stock

1+ parts

$0.300

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-

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79,535

$0.300

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Bristol Electronics

USA . 16 parts In-Stock

1+ parts

$0.750

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-

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16

$0.750

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-

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Ozdisan Elektronik

Türkiye . 143 parts In-Stock

1+ parts

$20.163

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143

$20.163

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Q Components

USA . 18,600 parts In-Stock

1+ parts

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18,600

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ComSIT Distribution GmbH

Germany . 1,875 parts In-Stock

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1,875

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Elcom Components

USA . 62 parts In-Stock

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62

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Nova Conductors

Japan . 10 parts In-Stock

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10

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 3,396 parts In-Stock

1+ parts

$0.255

100+ parts

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3,396

$0.255

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Continental Prestige Electronics

USA . 4,667 parts In-Stock

1+ parts

$0.839

100+ parts

$0.579

1k+ parts

-

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4,667

$0.839

$0.579

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Corohmni

South Africa . 22 parts In-Stock

1+ parts

$1.746

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22

$1.746

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Authorized Procurement Solutions

USA . 532 parts In-Stock

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532

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Netroflash

USA . 500 parts In-Stock

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500

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GreenTree Electronics

Israel . 500 parts In-Stock

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500

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Overview

Unlock the power of small signal field effect transistors with the Vishay Intertechnology SI9435BDY-T1-GE3. Manufactured with precision and expertise, this P-channel transistor offers reliable performance and efficiency in a compact package. Ideal for a variety of applications, this transistor provides seamless integration and enhanced functionality. Experience quality and value like never before with Vishay Intertechnology's cutting-edge technology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the transistor.

Polarity or Channel Type: P-CHANNEL

Suitable for applications where P-channel transistors are required, adding versatility to the product.

Configuration: SINGLE WITH BUILT-IN DIODE

Simplifies circuit design by incorporating a diode within the transistor package.

Surface Mount: YES

Enables easy installation and integration into surface mount technology applications.

Minimum DS Breakdown Voltage: 30 V

Provides a safe operating voltage range for various electronic circuits.

Package Shape: RECTANGULAR

Facilitates easy placement on circuit boards and ensures efficient use of space.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Delivers high performance and reliability in small signal applications.

Technical Specifications

Small Signal Field Effect Transistors (FET) SI9435BDY-T1-GE3 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Vishay Intertechnology

Specs

Minimum DS Breakdown Voltage:

30 V

Maximum Drain Current (Abs) (ID):

4.1 A

Maximum Drain Current (ID):

4.1 A

Maximum Drain-Source On Resistance:

.042 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

8

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Trade Compliance

SI9435BDY-T1-GE3 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

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