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SI3932DV-T1-GE3

Vishay Intertechnology

SI3932DV-T1-GE3 by Vishay Intertechnology

Vishay Intertechnology's SI3932DV-T1-GE3 is a N-channel FET with 30V DS breakdown voltage and 3.7A max drain current. Ideal for switching applications, it features separate elements with built-in diode in a small outline package suitable for surface mount technology. Operating in enhancement mode, this MOSFET has a max power dissipation of 1.4W at 150°C temperature.

Median Price

$0.333

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Mouser Electronics

USA . 171,588 parts In-Stock

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$0.950

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$0.387

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$0.269

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$0.232

171,588

$0.950

$0.387

$0.269

$0.232

DigiKey

USA . 2,875 parts In-Stock

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$0.950

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$0.387

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$0.269

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$0.204

2,875

$0.950

$0.387

$0.269

$0.204

TTI Europe

Germany . 39,000 parts In-Stock

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$0.203

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Future Electronics

Canada . 21,000 parts In-Stock

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$0.425

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Arrow

USA . 3,000 parts In-Stock

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$0.227

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Verical

USA . 3,000 parts In-Stock

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EBV Elektronik

Germany . 3,000 parts In-Stock

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Chip1Stop

Japan . 2,190 parts In-Stock

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$0.300

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$0.224

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Element14

Singapore . 434 parts In-Stock

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$0.595

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$0.512

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$0.428

434

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Farnell

UK . 314 parts In-Stock

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$0.333

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$0.303

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$0.297

314

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$0.303

$0.297

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Nova Conductors

Japan . 50 parts In-Stock

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$0.415

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$0.415

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IBS Electronics

USA . 63,000 parts In-Stock

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$0.337

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Component Sense

UK . 55,336 parts In-Stock

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NAC Semi

USA . 48,000 parts In-Stock

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$0.967

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$0.967

Vyrian

USA . 35,354 parts In-Stock

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Semtec, LLC

USA . 15,002 parts In-Stock

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NexGen Digital

USA . 12,000 parts In-Stock

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ComSIT Distribution GmbH

Germany . 10,865 parts In-Stock

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Chip Stock

USA . 7,280 parts In-Stock

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Rutronik

Germany . 6,000 parts In-Stock

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Velocity Electronics

USA . 1,309 parts In-Stock

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4 Star Electronics, Inc.

USA . 24 parts In-Stock

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Ampacity Inc.

Singapore . 35,171 parts In-Stock

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$0.156

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Semicontronic

India . 35,196 parts In-Stock

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$0.339

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$0.331

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$0.329

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Aztec Data Supply Inc.

USA . 2,194 parts In-Stock

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Argo Parts USA

USA . 3,066 parts In-Stock

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$0.359

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$0.348

3,066

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Continental Prestige Electronics

USA . 690 parts In-Stock

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$0.359

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$0.352

690

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Corohmni

South Africa . 126 parts In-Stock

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$0.409

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Advanced Electronics

New Zealand . 343 parts In-Stock

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RC Electronics

USA . 82,352 parts In-Stock

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Perfect Parts

USA . 76,536 parts In-Stock

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Kepictronics

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Microchip USA

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Robosynatics

Brazil . 200 parts In-Stock

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Lucentia Tech

USA . 200 parts In-Stock

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Overview

Upgrade your electronic devices with the Vishay Intertechnology SI3932DV-T1-GE3 small signal field effect transistor. Manufactured with precision and expertise, this N-channel transistor offers enhanced switching capabilities for a wide range of applications. With a maximum drain current of 3.7 A and a low drain-source on resistance of 0.058 ohm, this transistor delivers reliable performance and efficiency. Trust Vishay Intertechnology to provide high-quality components that elevate your projects to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and allows for compact size, making the product suitable for various applications.

Polarity or Channel Type: N-CHANNEL

N-channel FETs typically have higher electron mobility, leading to faster switching speeds and lower on-resistance.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

This configuration allows for added versatility in circuit design with built-in diode for protection.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient operation in such scenarios.

Surface Mount: YES

This feature facilitates easy and efficient installation on circuit boards, saving space and simplifying assembly.

Minimum DS Breakdown Voltage: 30 V

With a high breakdown voltage, this FET can handle higher voltages, increasing its range of potential applications.

Maximum Power Dissipation (Abs): 1.4 W

This indicates the capability to handle power efficiently, ensuring reliable performance under various operating conditions.

Maximum Operating Temperature: 150 °C

The high operating temperature range allows for use in demanding environments without risking performance or reliability.

Maximum Drain-Source On Resistance: 0.058 ohm

Low on-resistance results in minimal power loss and heat generation, enhancing the efficiency of the FET in switching applications.

Technical Specifications

Small Signal Field Effect Transistors (FET) SI3932DV-T1-GE3 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Vishay Intertechnology

Specs

Minimum DS Breakdown Voltage:

30 V

Maximum Drain Current (Abs) (ID):

3.7 A

Maximum Drain Current (ID):

3.7 A

Maximum Drain-Source On Resistance:

.058 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

FET General Purpose Powers

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

SI3932DV-T1-GE3 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

Category top products 20

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