Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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Vishay Intertechnology's SI3900DV is a N-CHANNEL FET with 2 elements & built-in diode. It has a max drain current of 2A, on-resistance of 0.125 ohm, and operates in enhancement mode. Ideal for applications requiring small outline packages, such as power management circuits in electronic devices.
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Vyrian
Nova Conductors
Aztec Data Supply Inc.
$0.945
Corohmni
$1.423
AZTECH Wire
$10.015
Continental Prestige Electronics
iodParts Technologies Inc.
Argo Parts USA
Aranea Global
The use of plastic/epoxy ensures a lightweight and durable package, making the product suitable for portable applications.
N-Channel FETs typically have higher mobility electrons, lower resistance, and better performance compared to P-Channel FETs.
The higher breakdown voltage provides better protection against voltage spikes, making the product suitable for various applications where reliability is crucial.
The rectangular package shape allows for efficient use of PCB space and easy integration into existing designs.
The high maximum drain current rating of 2A allows the product to handle higher loads without overheating or malfunctioning.
With a maximum power dissipation of 0.83W, the product can operate efficiently without risking damage due to excess heat.
Metal-Oxide Semiconductor technology offers high input impedance, low leakage current, and high speed operation, making the FET ideal for switching applications.
The high maximum operating temperature of 150°C allows for reliable operation in harsh environments where temperature fluctuations may occur.
Silicon-based transistors offer good thermal conductivity, low cost, and are widely available, making them a popular choice for various electronic applications.
The low drain-source on resistance of 0.125 ohms results in minimal power loss and improved efficiency in the product's operation.
Small Signal Field Effect Transistors (FET) SI3900DV attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Vishay Intertechnology
Configuration:
Minimum DS Breakdown Voltage:
Maximum Drain Current (Abs) (ID):
Maximum Drain Current (ID):
Maximum Drain-Source On Resistance:
Field Effect Transistor Technology:
JESD-30 Code:
JESD-609 Code:
No. of Elements:
No. of Terminals:
Operating Mode:
Maximum Operating Temperature:
Package Body Material:
Package Shape:
Package Style (Meter):
Polarity or Channel Type:
Maximum Power Dissipation (Abs):
Qualification:
Sub-Category:
Surface Mount:
Terminal Finish:
Terminal Form:
Terminal Position:
Transistor Element Material:
SI3900DV Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.
Executive Chairman of the Board, Chief Business Development Officer
Marc Zandman
Chief Executive Officer, President, and Director
Joel Smejkal
Executive Vice President and Chief Financial Officer
Lori Lipcaman
Itzehoe - Fab Phase 1
Fabrication
Fab Initiation
2025
Germany
Itzehoe
Wafer Capacity
US - Fab 3
1986
USA
Santa Clara
24,500
US - Fab 2
1972
8,000
Austria
1984
Vöcklabruck
25,000
Taiwan
1967
Hsintien
12,000
Italy - Fab 8
1961
Canada
Torino
15,000
Israel
2000
Yokneam Illit
400
OHN3020U
Optek Technology
MAGNETIC FIELD SENSOR,HALL EFFECT; Mounting Feature: THROUGH HOLE MOUNT; No. of Terminals: 3; Output Type: ANALOG CURRENT; Package Shape or Style: RECTANGULAR; Output Range: 25mA;
ULN2803A
Allegro MicroSystems
NPN; Configuration: 8 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): .5 A; Maximum Operating Temperature: 85 Cel; Terminal Form: THROUGH-HOLE;
1N4148
Rectron
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
1N4148WS
Changzhou Galaxy Century Microelectronics
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
LL4148
Continental Device India
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
ECA2DHG4R7
Panasonic
ECA2DHG4R7 by Panasonic is a 4.7uF aluminum electrolytic capacitor with 200V rated DC voltage. It features tan delta of 0.15, leakage current of 0.0664mA, and ripple current of 50mA, making it ideal for applications requiring high capacitance stability and low leakage in through-hole mounting setups at temperatures ranging from -25 to 105°C.
Jgd Semiconductors
RECTIFIER DIODE; Surface Mount: NO; Maximum Operating Temperature: 175 Cel; Maximum Reverse Recovery Time: .004 us; Maximum Non Repetitive Peak Forward Current: .5 A; Maximum Forward Voltage (VF): 1 V;
1N4148WT
Diotec Semiconductor Ag
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
SMBJ18CA
Brightking
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
RC0402JR-070RL
Yageo
Yageo's RC0402JR-070RL is a SMT fixed resistor with 0 ohm resistance, rated for temperatures from -55 to 155 °C. It features METAL GLAZE/THICK FILM tech, WRAPAROUND terminals, and 0.0625 W power dissipation. Ideal for jumper applications in electronics requiring compact surface mount components.
LM358MX
Texas Instruments
LM358MX by Texas Instruments is a dual operational amplifier with a max input offset voltage of 9000 uV. It has a nominal voltage of 5V and a min voltage gain of 15000. This op amp is commonly used in applications requiring amplification and signal conditioning.
MBRA340T3G
Onsemi
MBRA340T3G by Onsemi is a Schottky rectifier diode with 40V reverse test voltage and 3A max output current. Ideal for power applications, it operates b/w -55 to 150°C, features matte tin terminal finish, and comes in a small outline package.
M39029/58-360
Positronic Industries
CONNECTOR ACCESSORY; MIL-Connector Accessory Name: CONTACT; DIN Conformity: NO; National Stock Number (NSN): 5999004733551; Mating Contacts: M39029/56-348, M39029/57-354; Contact Type: CRIMP REAR RELEASE;
SS14
Vishay Intertechnology
Vishay Intertechnology's SS14 is a Schottky rectifier diode with a max forward voltage of 0.5V and output current of 1A. Operating at up to 125°C, it has a repetitive peak reverse voltage of 40V. Ideal for surface mount applications, it suits various electronic circuits requiring efficient rectification and low forward voltage drop.
Hy Electronic
LM107H/883
Rochester Electronics
OPERATIONAL AMPLIFIER; Temperature Grade: MILITARY; Terminal Form: WIRE; No. of Terminals: 8; Package Shape: ROUND; Maximum Average Bias Current (IIB): .1 uA;
BSS138BKW,115
NXP Semiconductors
NXP Semiconductors' BSS138BKW,115 is a N-CHANNEL FET with 60V DS breakdown voltage and 0.32A ID. Ideal for SWITCHING applications, it features a built-in diode, 1.6 ohm RDS(on), and operates in ENHANCEMENT MODE. Suitable for surface mount with GULL WING terminals, it meets AEC-Q101 standards.
Diodes Incorporated
Good-ark Electronics
M24308/2-1F
Defense Logistics Agency
D SUBMINIATURE CONNECTOR; Option: GENERAL PURPOSE; Contact Gender: FEMALE; Mounting Type: CABLE AND PANEL; Mating Info.: MULTIPLE MATING PARTS AVAILABLE; Empty Shell: NO;
FDV302P
FDV302P by Onsemi is a P-CHANNEL FET with 25V DS Breakdown Voltage, 0.12A Drain Current, and 10 ohm On Resistance. Ideal for SWITCHING applications, it features SINGLE configuration with BUILT-IN DIODE in a PLASTIC/EPOXY package suitable for surface mount technology.
2N7002BKV,115
NXP Semiconductors' 2N7002BKV,115 is a N-CHANNEL FET for SWITCHING applications. Features include 60V DS Breakdown Voltage, 0.34A Drain Current, and 1.6 ohm On Resistance. With a max temp of 150°C, it's ideal for small outline packages in ENHANCEMENT MODE circuits.
MMBF4393LT1G
MMBF4393LT1G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features SINGLE configuration with BUILT-IN DIODE and operates in ENHANCEMENT MODE. With a max power dissipation of 0.225W and operating temperature up to 150°C, it offers reliable performance in various electronic circuits.
FDMQ8205A
FDMQ8205A by Onsemi is a Small Signal FET with N/P-Channel, 1.7A max drain current, and 0.051 ohm on-resistance. Ideal for switching applications in enhancement mode, it features a complex configuration in a small outline package with no lead terminals.
2N7002W
Micro Commercial Components
Small Signal Field-Effect Transistors; Configuration: SINGLE; Surface Mount: YES; JESD-609 Code: e0; Terminal Form: GULL WING; Maximum Time At Peak Reflow Temperature (s): 30;
ZVP2106ASTOB
Zetex Plc
ZVP2106ASTOB by Zetex Plc is a P-CHANNEL FET for SWITCHING applications. Features include 60V DS Breakdown Voltage, 0.28A ID, and 5Ω RDS(ON). Operating in ENHANCEMENT MODE, it has a max temp of 200°C.
ZVP1320FTA
ZVP1320FTA by Diodes Inc. is a P-CHANNEL FET with 200V DS Breakdown Voltage, 0.035A Drain Current, and 80 ohm On Resistance. Ideal for small signal applications in electronics due to its compact SMALL OUTLINE package and ENHANCEMENT MODE operation. Suitable for use in various electronic circuits requiring low power dissipation and high voltage tolerance.
BS170
Temic Semiconductors
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Drain-Source On Resistance: 5 ohm; Terminal Position: BOTTOM; Package Style (Meter): CYLINDRICAL;
SN7002WH6327XTSA1
Infineon Technologies
Infineon Technologies' SN7002WH6327XTSA1 is a small signal N-channel FET with a min DS breakdown voltage of 60V. It features a single configuration with built-in diode and operates in enhancement mode. This surface mount transistor, made of silicon, has a max drain current of 0.23A and a max drain-source on resistance of 5 ohm. It is commonly used in automotive applications due to its AEC-Q101 reference standard and moisture sensitivity level of 1.
MMBF170
Lite-on Semiconductor
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Minimum DS Breakdown Voltage: 60 V; Terminal Form: GULL WING; Terminal Position: DUAL;
BSS138
General Semiconductor
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Minimum DS Breakdown Voltage: 50 V; Qualification: Not Qualified;
ZVN3310FTA
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Operating Temperature: 150 Cel; No. of Terminals: 3;
NX3008PBK,215
Nexperia
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Finish: TIN; Maximum Time At Peak Reflow Temperature (s): 30; JEDEC-95 Code: TO-236AB;
BSS138PW,115
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .31 W; Minimum DS Breakdown Voltage: 60 V; Operating Mode: ENHANCEMENT MODE;
BSS138P,215
NXP Semiconductors' BSS138P,215 is a N-CHANNEL FET with 60V DS breakdown voltage and 0.36A max drain current. Ideal for switching applications, it features a built-in diode, operates in enhancement mode, and has a max power dissipation of 1140W.
2N7002
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Qualification: Not Qualified; Additional Features: LOW THRESHOLD; Minimum DS Breakdown Voltage: 60 V;
IRLML2402TRPBF
Infineon Technologies' IRLML2402TRPBF is a N-CHANNEL FET with 20V DS breakdown voltage, ideal for switching applications. It features a single configuration with built-in diode, GULL WING terminals, and operates in enhancement mode. With 1.2A max drain current and 0.25 ohm max on resistance, it can handle up to 0.54W power dissipation efficiently at temperatures ranging from -55°C to 150°C.
BSS84P-E6327
BSS84P-E6327 by Infineon Technologies is a P-CHANNEL FET with 60V DS breakdown voltage, 0.17A max drain current, and 8 ohm max on resistance. Ideal for switching applications, it features a built-in diode in a small outline package suitable for surface mount technology.
2N7002T
Vishay Siliconix
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JESD-609 Code: e0; Package Shape: RECTANGULAR; Maximum Feedback Capacitance (Crss): 5 pF;
NDS356AP
Fairchild Semiconductor
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Terminal Position: DUAL; Maximum Time At Peak Reflow Temperature (s): 30;
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SI3932DV-T1-GE3
Vishay Intertechnology's SI3932DV-T1-GE3 is a N-channel FET with 30V DS breakdown voltage and 3.7A max drain current. Ideal for switching applications, it features separate elements with built-in diode in a small outline package suitable for surface mount technology. Operating in enhancement mode, this MOSFET has a max power dissipation of 1.4W at 150°C temperature.
SI3993CDV-T1-GE3
SI3993CDV-T1-GE3 by Vishay Intertechnology is a P-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features 2 elements with built-in diode, GULL WING terminals, and operates in ENHANCEMENT MODE. With a max ID of 2.9A and 0.111 ohm RDS(on), it offers high performance in a SMALL OUTLINE package.
SI3900DV-T1-E3
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Qualification: Not Qualified; No. of Elements: 2; Package Body Material: PLASTIC/EPOXY;
SI3900DV-T1-E3 by Vishay Intertechnology is a N-CHANNEL FET with 2 elements and built-in diode for SWITCHING applications. Features include 20V DS Breakdown Voltage, 2A Drain Current, and 0.125 ohm On Resistance. Ideal for surface mount designs in small outline packages with matte tin finish.
SI3900DV-T1-GE3
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; Package Shape: RECTANGULAR; Moisture Sensitivity Level (MSL): 1;
Vishay Intertechnology's SI3900DV-T1-GE3 is a N-channel FET with 2 elements and built-in diode, ideal for switching applications. It has a max drain current of 2A, on-resistance of 0.125 ohm, and operates in enhancement mode. With a breakdown voltage of 20V and power dissipation of 1.15W, it suits small outline packages for high-temp environments up to 150°C.
SI3900DV-T1
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; Package Shape: RECTANGULAR; Terminal Form: GULL WING;
SI3993DV-T1-E3
P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.15 W; Moisture Sensitivity Level (MSL): 1; JESD-609 Code: e3;
SI3905DV
P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; Terminal Position: DUAL; Maximum Drain-Source On Resistance: .125 ohm;
SI3909DV
P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; No. of Terminals: 6; No. of Elements: 2; Terminal Position: DUAL;
SI3911DV-T1
P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; Maximum Drain-Source On Resistance: .145 ohm; Terminal Finish: TIN LEAD;
SI3905DV-T1
P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; No. of Terminals: 6; JESD-609 Code: e0; No. of Elements: 2;
SI3909DV-T1
P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; JESD-30 Code: R-PDSO-G6;
SI3971DV-T1-E3
P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.08 W; JESD-30 Code: R-PDSO-G6; Maximum Drain-Source On Resistance: .14 ohm;
SI3900DV-E3
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .83 W; No. of Elements: 2; Terminal Position: DUAL;
SI3905DV-E3
P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Qualification: Not Qualified; Package Shape: RECTANGULAR; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
SI3905DV-T1-E3
P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; No. of Terminals: 6; Transistor Element Material: SILICON; JEDEC-95 Code: MO-193C;
SI3909DV-E3
P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.15 W; JESD-30 Code: R-PDSO-G6; Operating Mode: ENHANCEMENT MODE;
SI3909DV-T1-E3
P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; JESD-30 Code: R-PDSO-G6; Qualification: Not Qualified;
SI3915DV-E3
P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.15 W; JESD-609 Code: e3; Maximum Operating Temperature: 150 Cel;
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