Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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Power Field-Effect Transistors;
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QUARKTWIN TECHNOLOGY LTD
Authorized Procurement Solutions
IRL630PBF-BE3 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.
Executive Chairman of the Board, Chief Business Development Officer
Marc Zandman
Chief Executive Officer, President, and Director
Joel Smejkal
Executive Vice President and Chief Financial Officer
Lori Lipcaman
Itzehoe - Fab Phase 1
Fabrication
Fab Initiation
2025
Germany
Itzehoe
Wafer Capacity
US - Fab 3
1986
USA
Santa Clara
24,500
US - Fab 2
1972
8,000
Austria
1984
Vöcklabruck
25,000
Taiwan
1967
Hsintien
12,000
Italy - Fab 8
1961
Canada
Torino
15,000
Israel
2000
Yokneam Illit
400
1552200253
Molex
WIRE AND CABLE;
261
Micronetics
Other Interface ICs; Temperature Grade: MILITARY; Terminal Form: FLAT; No. of Terminals: 14; Package Code: DFP; Package Shape: SQUARE;
1N4148
Vishay Intertechnology
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
1N4148WS-7-F
Diodes Incorporated
1N4148WS-7-F by Diodes Inc. is a single rectifier diode with max reverse recovery time of 0.004 us and max reverse current of 1 uA. It operates b/w -65 to 150 °C, ideal for applications requiring small outline surface mount diodes with a max output current of 0.15 A.
BAV99
Panjit International
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
1N4148WS
Tak Cheong Electronics Holdings
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
LM317T/NOPB
Texas Instruments
LM317T/NOPB by Texas Instruments is an adjustable positive single output standard regulator with a max output voltage of 37V and max input-output voltage differential of 40V. It operates in temperatures ranging from 0 to 125°C, making it suitable for various applications requiring precise voltage regulation in electronic circuits. The package style is flange mount with three terminals for easy installation.
BAV99-7-F
Diodes Inc. BAV99-7-F is a series-connected, center tap diode with 2 elements in a small outline package. It has a max reverse recovery time of 0.004 us and can handle up to 0.3A output current. Ideal for rectification applications requiring fast switching and low reverse current requirements.
SMBJ18CA
Db Lectro
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Kec
LIS2DH12TR
STMicroelectronics
LIS2DH12TR by STMicroelectronics is a 3-axis accelerometer with digital voltage output. It operates b/w -40 to 85°C, with supply voltage range of 1.71-3.6V. Ideal for applications requiring precise motion sensing in compact spaces like wearables and IoT devices.
SS14
Fairchild Semiconductor
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Formosa Microsemi
LM107H
National Semiconductor
OPERATIONAL AMPLIFIER; Temperature Grade: MILITARY; Terminal Form: WIRE; No. of Terminals: 8; Package Code: TO-99; Package Shape: ROUND;
DS18B20U
Dallas Semiconductor
TEMPERATURE SENSOR,SWITCH/DIGITAL OUTPUT,SERIAL; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Shape or Style: RECTANGULAR; Minimum Operating Temperature: -55 Cel; Package Equivalence Code: TSSOP8,.19;
2N7002
Micro Commercial Components
Small Signal Field-Effect Transistors; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Application: SWITCHING; Maximum Drain Current (ID): .34 A; Package Style (Meter): SMALL OUTLINE;
2N2222A
2N2222A by Texas Instruments is a small signal NPN bipolar junction transistor (BJT) with a max collector-emitter voltage of 40V and a max collector current of 0.8A. It is commonly used for switching applications due to its fast turn on/off times (35ns/285ns) and high transition frequency (300MHz).
ULN-2803A
Vishay Sprague
Vishay Sprague's ULN-2803A is an 8-bit peripheral driver with a max supply voltage of 3V. Featuring open-collector output characteristics, it offers built-in transient protections and operates b/w -20°C to 85°C. Ideal for applications requiring sink current flow direction, this rectangular-shaped driver has a terminal pitch of 2.54mm and turn-on/off time of 1us.
General Instrument
STW11NK100Z
STW11NK100Z by STMicroelectronics is a N-CHANNEL power FET with 1000V DS breakdown voltage. It is used for switching applications, with max drain current of 8.3A and on-resistance of 1.38 ohm.
IRFZ44NLPBF
International Rectifier
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 94 W; Terminal Finish: Matte Tin (Sn) - with Nickel (Ni) barrier; No. of Terminals: 3;
IRFD110PBF
Power Field-Effect Transistors; Qualification: Not Qualified; Terminal Finish: PURE MATTE TIN; Moisture Sensitivity Level (MSL): 1; Maximum Drain Current (Abs) (ID): 1 A; Peak Reflow Temperature (C): 260;
JANTX2N6796U
Microsemi
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Additional Features: HIGH RELIABILITY; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
FDC5612-F095
FDC5612-F095 by Fairchild Semiconductor is a N-CHANNEL Power FET with 4.3A max drain current and 1.6W power dissipation. Ideal for applications requiring high efficiency in enhancement mode operation, such as power management systems and motor control circuits.
IRF640STRRPBF
Vishay Siliconix
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Peak Reflow Temperature (C): 260; Minimum DS Breakdown Voltage: 200 V; JESD-30 Code: R-PSSO-G2;
IRF7401TRPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Additional Features: LOGIC LEVEL COMPATIBLE; Maximum Pulsed Drain Current (IDM): 35 A;
IRFL9014PBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JESD-30 Code: R-PSSO-G3; No. of Terminals: 3; No. of Elements: 1;
SPW47N60C3
Infineon Technologies
SPW47N60C3 by Infineon Technologies is a N-CHANNEL Power FET with 600V DS Breakdown Voltage. It features a Max Drain Current of 47A and 0.07 ohm On Resistance, suitable for high-power applications. Ideal for use in power supplies, motor control, and industrial equipment due to its high current handling capabilities.
FDD6685
Onsemi
FDD6685 by Onsemi is a P-CHANNEL Power FET with 30V DS Breakdown Voltage and 11A Drain Current. Ideal for SWITCHING applications, it features a built-in DIODE, GULL WING terminals, and operates in ENHANCEMENT MODE. With a max power dissipation of 52W and peak reflow temperature of 260°C, it offers reliable performance in various electronic devices.
ZXMP10A18KTC
ZXMP10A18KTC by Diodes Inc. is a P-CHANNEL FET with 100V DS Breakdown Voltage, ideal for SWITCHING applications. It features 21.1A IDM, 0.15 ohm RDS(on), and operates in ENHANCEMENT MODE at up to 150°C. Suitable for surface mount with GULL WING terminals, it offers high performance in compact SMALL OUTLINE package style.
IPB120P04P4L03ATMA2
IPB120P04P4L03ATMA2 by Infineon is a P-CHANNEL FET with 40V DS Breakdown Voltage, 480A IDM, and 0.0049 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance.
BSC093N15NS5ATMA1
Infineon BSC093N15NS5ATMA1 is a N-CHANNEL FET with 150V DS breakdown voltage, 0.0093 ohm RDS(on), and 348A IDM. Ideal for switching applications due to its built-in diode, it operates in enhancement mode and has an EAS of 130mJ. The transistor's small outline package makes it suitable for surface mount designs.
FDD5614P
FDD5614P by Onsemi is a P-CHANNEL Power FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 45A IDM and 0.1 ohm RDS(ON), operating in ENHANCEMENT MODE at up to 175°C. The PLASTIC/EPOXY package with GULL WING terminals ensures efficient heat dissipation and reliable performance.
RFD16N05LSM9A
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 60 W; JEDEC-95 Code: TO-252AA; Terminal Form: GULL WING;
AUIRFZ44NS
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 94 W; JESD-609 Code: e3; Transistor Application: SWITCHING;
FQP47P06
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 160 W; JESD-30 Code: R-PSFM-T3; Maximum Pulsed Drain Current (IDM): 188 A;
FDB33N25TM
FDB33N25TM by Onsemi is a N-CHANNEL Power FET with 250V DS Breakdown Voltage and 33A Drain Current. Ideal for SWITCHING applications, it features a built-in DIODE, 132A Pulsed Drain Current, and 0.094 ohm On Resistance. The transistor operates in ENHANCEMENT MODE with a max power dissipation of 235W in a small outline package style.
IRF3205ZSPBF
IRF3205ZSPBF by Infineon is an N-CHANNEL FET with 55V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 440A and EAS of 180mJ, operating in ENHANCEMENT MODE. With a Drain Current of 75A and 0.0065 ohm On Resistance, it offers high power dissipation up to 170W in a SMALL OUTLINE package.
SI7469ADP-T1-RE3
Vishay Intertechnology's SI7469ADP-T1-RE3 is a P-channel FET with 80V DS breakdown voltage and 125A IDM. Ideal for switching applications, it features a built-in diode, 0.027 ohm RDS(on), and operates in enhancement mode. Suitable for surface mount with 5 terminals, this MOSFET has a max power dissipation of 73.5W and can withstand temperatures from -55 to 150°C.
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IRL6372TRPBF
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Moisture Sensitivity Level (MSL): 2; Transistor Application: SWITCHING;
IRL6372PBF
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Maximum Pulsed Drain Current (IDM): 65 A; Maximum Operating Temperature: 150 Cel;
IRL640SPBF
Vishay Intertechnology's IRL640SPBF is a N-CHANNEL FET with 200V DS Breakdown Voltage and 68A IDM. Ideal for SWITCHING applications, it features a built-in diode, 0.18 ohm RDS(on), and 125W Pdiss. Suitable for surface mount designs in power electronics due to its high current handling capabilities.
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JESD-30 Code: R-PSSO-G2; Minimum DS Breakdown Voltage: 200 V; Maximum Operating Temperature: 150 Cel;
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 125 W; Operating Mode: ENHANCEMENT MODE; Maximum Drain Current (Abs) (ID): 17 A;
IRL640PBF
Vishay Intertechnology's IRL640PBF is a N-CHANNEL Power FET with 200V DS Breakdown Voltage, ideal for SWITCHING applications. Featuring a max IDM of 68A and EAS of 580mJ, this ENHANCEMENT MODE transistor has a Drain Current of 17A and 0.18 ohm On Resistance. The package style is FLANGE MOUNT with PLASTIC/EPOXY body material, suitable for high-power operations up to 150°C.
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Transistor Application: SWITCHING; Package Style (Meter): FLANGE MOUNT; Package Shape: RECTANGULAR;
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Maximum Drain-Source On Resistance: .18 ohm; Package Shape: RECTANGULAR;
IRL630PBF
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Terminal Position: SINGLE; Transistor Element Material: SILICON; Terminal Form: THROUGH-HOLE;
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 74 W; Minimum DS Breakdown Voltage: 200 V; Maximum Operating Temperature: 150 Cel;
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Transistor Element Material: SILICON; Qualification: Not Qualified; Operating Mode: ENHANCEMENT MODE;
IRL6342PBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Maximum Operating Temperature: 150 Cel; Maximum Pulsed Drain Current (IDM): 79 A;
IRL6342PBF by Infineon Technologies is a N-CHANNEL Power FET with 30V DS Breakdown Voltage and 0.0146 ohm RDS(ON). Ideal for SWITCHING applications, it features 79A IDM and 9.9A ID, in a PLASTIC/EPOXY package with GULL WING terminals.
IRL6342TRPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Package Style (Meter): SMALL OUTLINE; Maximum Drain Current (Abs) (ID): 9.9 A;
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Transistor Element Material: SILICON;
IRL640STRLPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Operating Temperature: 150 Cel; JESD-609 Code: e3; Package Shape: RECTANGULAR;
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JEDEC-95 Code: TO-263AB; Package Shape: RECTANGULAR; Maximum Pulsed Drain Current (IDM): 68 A;
Vishay Intertechnology's IRL640STRLPBF is a N-CHANNEL Power FET with 200V DS Breakdown Voltage and 68A Pulsed Drain Current. Ideal for SWITCHING applications, it features a built-in diode, 0.18 ohm On Resistance, and operates in ENHANCEMENT MODE at up to 150°C.
IRL620PBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Package Body Material: PLASTIC/EPOXY; Transistor Application: SWITCHING; JESD-30 Code: R-PSFM-T3;
IRL630-030PBF
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Terminal Position: SINGLE; Maximum Drain-Source On Resistance: .4 ohm; Package Body Material: PLASTIC/EPOXY;
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