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TPN2R703NL,L1Q

Toshiba

TPN2R703NL,L1Q by Toshiba

Toshiba TPN2R703NL,L1Q is a N-CHANNEL FET with 30V DS breakdown voltage, ideal for switching applications. It has a max ID of 45A and 0.0041 ohm RDS(on), operating in enhancement mode at up to 150°C. The small outline package with drain connection and built-in diode makes it suitable for high-power applications requiring efficient switching capabilities.

Median Price

$1.098

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Arrow

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$0.315

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Mouser Electronics

USA . 19,650 parts In-Stock

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$1.750

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$0.744

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$0.534

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$0.499

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$0.745

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$0.436

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Verical

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Bristol Electronics

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Dan-Mar Components

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Nova Conductors

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650

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Overview

Unleash the power of innovation with the Toshiba TPN2R703NL,L1Q small signal field effect transistor. Manufactured by Toshiba, a renowned leader in electronic components, this N-channel transistor offers unmatched quality and reliability. Ideal for switching applications, its single configuration with built-in diode ensures seamless performance. With a maximum drain current of 45A and a minimum DS breakdown voltage of 30V, this transistor is designed to deliver optimal efficiency and performance. Experience the difference with Toshiba's cutting-edge technology and elevate your projects to new heights.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides durability and protection for the transistor, making it resistant to external elements and ensuring a longer lifespan.

Polarity or Channel Type: N-CHANNEL

N-channel transistors are known for their high efficiency and fast switching speeds, making this transistor suitable for applications requiring quick response times.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode allows for improved performance in switching applications by providing better control over the flow of current.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor can effectively control the flow of current, making it ideal for use in electronic circuits that require on/off functionality.

Surface Mount: YES

The surface mount capability makes this transistor easy to install on circuit boards, saving space and allowing for efficient assembly in electronic devices.

Minimum DS Breakdown Voltage: 30 V

With a minimum breakdown voltage of 30V, this transistor can handle higher voltage levels, ensuring reliable performance in various electronic applications.

Package Shape: SQUARE

The square package shape allows for easy placement and alignment on circuit boards, simplifying the manufacturing process and improving overall efficiency.

Operating Mode: ENHANCEMENT MODE

Enhancement mode transistors offer improved control over current flow, making them ideal for applications that require precise regulation of current levels.

Maximum Power Dissipation (Abs): 42 W

With a maximum power dissipation of 42W, this transistor can handle high power levels without overheating, ensuring reliable operation even under heavy loads.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on circuit boards, making this transistor suitable for compact electronic devices where size is a critical factor.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers excellent performance and reliability, making this transistor a high-quality choice for demanding electronic applications.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this transistor can withstand high temperatures, ensuring stable performance even in challenging environments.

Transistor Element Material: SILICON

Silicon is a common and reliable material for transistors, providing good conductivity and durability, making this transistor a dependable choice for various applications.

Maximum Drain Current (ID): 45 A

Capable of handling a maximum drain current of 45A, this transistor is suitable for applications that require high current output, making it versatile for a wide range of electronic circuits.

Maximum Drain-Source On Resistance: 0.0041 ohm

With a low on resistance of 0.0041 ohms, this transistor ensures efficient current flow with minimal power loss, making it energy-efficient and suitable for high-performance applications.

Terminal Position: DUAL

The dual terminal position allows for flexibility in circuit design and implementation, accommodating various connection configurations and making this transistor versatile for different applications.

Case Connection: DRAIN

The drain case connection provides a stable and reliable connection point for the transistor, allowing for efficient heat dissipation and ensuring consistent performance under various operating conditions.

Maximum Feedback Capacitance (Crss): 120 pF

With a maximum feedback capacitance of 120pF, this transistor offers stable performance in high-frequency applications, making it suitable for circuits that require fast switching speeds.

Technical Specifications

Small Signal Field Effect Transistors (FET) TPN2R703NL,L1Q attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Toshiba

Specs

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

30 V

Maximum Drain Current (ID):

45 A

Maximum Drain-Source On Resistance:

.0041 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

120 pF

JESD-30 Code:

S-PDSO-F8

No. of Elements:

1

No. of Terminals:

8

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

SQUARE

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

TPN2R703NL,L1Q Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Toshiba

TOSHIBA, is a Japanese multinational conglomerate corporation headquartered in Minato, Tokyo, Japan. Its diversified products and services include power, industrial and social infrastructure systems, elevators and escalators, electronic components, semiconductors, hard disk drives (HDD), printers, batteries, lighting, as well as IT solutions such as quantum cryptography which has been in development at Cambridge Research Laboratory, Toshiba Europe, located in the United Kingdom, now being commercialised.It was one of the biggest manufacturers of personal computers, consumer electronics, home appliances, and medical equipment. As a semiconductor company and the inventor of flash memory, Toshiba had been one of the top 10 in the chip industry until its flash memory unit was spun off as Toshiba Memory, later Kioxia, in the late 2010s.

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