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TPN2R703NL

Toshiba

TPN2R703NL by Toshiba

Toshiba TPN2R703NL is a N-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 45A ID, 0.0041 ohm RDS(on), and 120pF Crss. Its METAL-OXIDE SEMICONDUCTOR technology and ENHANCEMENT MODE make it suitable for various electronic devices requiring high current switching capabilities.

Median Price

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Lifecycle Status

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1

In-Stock Inventory

< 1k

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Nova Conductors

Japan . 450 parts In-Stock

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450

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Ampacity Inc.

Singapore . 559 parts In-Stock

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$35.050

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559

$35.050

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Continental Prestige Electronics

USA . 3,661 parts In-Stock

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3,661

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Argo Parts USA

USA . 2,243 parts In-Stock

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2,243

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Kepictronics

USA . 2,000 parts In-Stock

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2,000

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Aranea Global

USA . 500 parts In-Stock

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500

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Overview

Experience the power of Toshiba's TPN2R703NL Small Signal Field Effect Transistor, a game-changer in switching applications. With its N-CHANNEL configuration and built-in diode, this transistor offers unparalleled performance and reliability. Perfect for enhancing your electronic projects, this transistor boasts a maximum drain current of 45A and a low drain-source on resistance for optimal efficiency. Trust in Toshiba's reputation for quality and innovation, and take your designs to the next level with the TPN2R703NL.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides durability and protection for the transistor, making it suitable for a variety of operating conditions.

Polarity or Channel Type: N-CHANNEL

N-channel transistors typically have higher electron mobility and faster switching speeds compared to P-channel transistors, making them ideal for switching applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode allows for easy implementation in circuits requiring reverse polarity protection or inductive kickback suppression.

Transistor Application: SWITCHING

Designed for switching applications, this transistor can efficiently control the flow of current in a circuit, making it suitable for use in power supplies, inverters, and other switching devices.

Surface Mount: YES

Surface mount compatibility allows for easy and space-efficient PCB design, making it suitable for compact electronic devices.

Minimum DS Breakdown Voltage: 30 V

With a minimum breakdown voltage of 30V, this transistor can handle higher voltages without failing, providing reliability in high voltage circuits.

Package Shape: SQUARE

The square package shape allows for easy mounting and alignment on the PCB, simplifying the assembly process.

Terminal Form: FLAT

The flat terminal form facilitates soldering and provides a secure connection to the PCB, ensuring stability during operation.

Operating Mode: ENHANCEMENT MODE

Enhancement mode transistors offer high input impedance and low leakage current, making them energy-efficient and suitable for a wide range of applications.

No. of Terminals: 8

With 8 terminals, this transistor can support multiple connections, enabling complex circuit designs and functionality.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the PCB, making it suitable for compact devices with limited board space.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology provides high performance with low power consumption, making this transistor energy-efficient and reliable.

Transistor Element Material: SILICON

Silicon material offers high thermal conductivity and temperature tolerance, ensuring stable performance in various operating conditions.

Maximum Drain Current (ID): 45 A

With a maximum drain current of 45A, this transistor can handle high current loads, making it suitable for power electronics applications.

Maximum Drain-Source On Resistance: 0.0041 ohm

The low on-resistance ensures minimal power loss and high efficiency in switching applications, making this transistor a good choice for power management circuits.

Terminal Position: DUAL

Dual terminal position allows for flexible connectivity options and circuit configurations, enhancing the versatility of this transistor.

Case Connection: DRAIN

The drain case connection simplifies the circuit layout and provides a direct path for current flow, improving the overall efficiency of the transistor.

Maximum Feedback Capacitance (Crss): 120 pF

The low feedback capacitance helps reduce signal distortion and improve high-frequency performance, making this transistor suitable for fast switching applications.

Technical Specifications

Small Signal Field Effect Transistors (FET) TPN2R703NL attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Toshiba

Specs

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

30 V

Maximum Drain Current (ID):

45 A

Maximum Drain-Source On Resistance:

.0041 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

120 pF

JESD-30 Code:

S-PDSO-F8

No. of Elements:

1

No. of Terminals:

8

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

SQUARE

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

TPN2R703NL Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Toshiba

TOSHIBA, is a Japanese multinational conglomerate corporation headquartered in Minato, Tokyo, Japan. Its diversified products and services include power, industrial and social infrastructure systems, elevators and escalators, electronic components, semiconductors, hard disk drives (HDD), printers, batteries, lighting, as well as IT solutions such as quantum cryptography which has been in development at Cambridge Research Laboratory, Toshiba Europe, located in the United Kingdom, now being commercialised.It was one of the biggest manufacturers of personal computers, consumer electronics, home appliances, and medical equipment. As a semiconductor company and the inventor of flash memory, Toshiba had been one of the top 10 in the chip industry until its flash memory unit was spun off as Toshiba Memory, later Kioxia, in the late 2010s.

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