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TPN1600ANH,L1Q

Toshiba

TPN1600ANH,L1Q by Toshiba

Toshiba TPN1600ANH,L1Q is a N-CHANNEL FET with 100V DS Breakdown Voltage, ideal for SWITCHING applications. It has a max ID of 36A and 0.016 ohm Drain-Source On Resistance, operating in ENHANCEMENT MODE at up to 150°C. The package is SQUARE with 8 terminals, featuring METAL-OXIDE SEMICONDUCTOR technology.

Median Price

$0.310

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Mouser Electronics

USA . 2,435 parts In-Stock

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$1.840

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$0.747

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$0.502

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$0.382

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Newark

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$0.280

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Verical

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Vyrian

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Ampacity Inc.

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Semicontronic

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$0.269

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$0.262

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$0.261

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Advanced Electronics

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Overview

Enhance your electronic devices with the TPN1600ANH, L1Q by Toshiba. Crafted with precision and quality by Toshiba, this small signal field-effect transistor offers a plethora of benefits for switching applications. With a maximum power dissipation of 42W and a minimum DS breakdown voltage of 100V, this N-channel transistor is designed to optimize performance while maintaining efficiency. Upgrade your devices with the reliability and innovation of Toshiba technology, providing you with the value and advantage you need for seamless operation. Elevate your electronics with the TPN1600ANH, L1Q today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the transistor.

Polarity or Channel Type: N-CHANNEL

Allows for efficient current flow and switching capabilities.

Configuration: SINGLE WITH BUILT-IN DIODE

Offers added functionality with the built-in diode for certain applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable performance.

Surface Mount: YES

Allows for easy and convenient installation on circuit boards.

Minimum DS Breakdown Voltage: 100 V

Provides a high breakdown voltage for safe and reliable operation.

Package Shape: SQUARE

Offers a compact design for efficient use of space on a circuit board.

Maximum Power Dissipation (Abs): 42 W

Can handle high power dissipation, making it suitable for demanding applications.

Package Style (Meter): SMALL OUTLINE

Features a small outline package for space-saving and compact design requirements.

Maximum Operating Temperature: 150 °C

Withstands high operating temperatures, ensuring stability and reliability under extreme conditions.

Maximum Drain Current (ID): 36 A

Can handle high current loads, making it suitable for high-power applications.

Maximum Drain-Source On Resistance: 0.016 ohm

Low on-resistance minimizes power loss and heat generation, improving efficiency.

Terminal Position: DUAL

Provides flexibility in circuit design and connections.

Case Connection: DRAIN

Simplifies the connection setup for circuit integration.

Maximum Feedback Capacitance (Crss): 50 pF

Low feedback capacitance ensures stable and reliable performance in high-frequency applications.

Technical Specifications

Small Signal Field Effect Transistors (FET) TPN1600ANH,L1Q attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Toshiba

Specs

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

100 V

Maximum Drain Current (ID):

36 A

Maximum Drain-Source On Resistance:

.016 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

50 pF

JESD-30 Code:

S-PDSO-F8

No. of Elements:

1

No. of Terminals:

8

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

SQUARE

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

TPN1600ANH,L1Q Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Toshiba

TOSHIBA, is a Japanese multinational conglomerate corporation headquartered in Minato, Tokyo, Japan. Its diversified products and services include power, industrial and social infrastructure systems, elevators and escalators, electronic components, semiconductors, hard disk drives (HDD), printers, batteries, lighting, as well as IT solutions such as quantum cryptography which has been in development at Cambridge Research Laboratory, Toshiba Europe, located in the United Kingdom, now being commercialised.It was one of the biggest manufacturers of personal computers, consumer electronics, home appliances, and medical equipment. As a semiconductor company and the inventor of flash memory, Toshiba had been one of the top 10 in the chip industry until its flash memory unit was spun off as Toshiba Memory, later Kioxia, in the late 2010s.

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