Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 1400 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .05 A;
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RF Small Signal Bipolar Junction Transistors (BJT) 2SC3123 attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Toshiba
Maximum Collector Current (IC):
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Minimum DC Current Gain (hFE):
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JESD-609 Code:
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Package Style (Meter):
Polarity or Channel Type:
Maximum Power Dissipation (Abs):
Qualification:
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Surface Mount:
Terminal Finish:
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Transistor Element Material:
Nominal Transition Frequency (fT):
2SC3123 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
TOSHIBA, is a Japanese multinational conglomerate corporation headquartered in Minato, Tokyo, Japan. Its diversified products and services include power, industrial and social infrastructure systems, elevators and escalators, electronic components, semiconductors, hard disk drives (HDD), printers, batteries, lighting, as well as IT solutions such as quantum cryptography which has been in development at Cambridge Research Laboratory, Toshiba Europe, located in the United Kingdom, now being commercialised.It was one of the biggest manufacturers of personal computers, consumer electronics, home appliances, and medical equipment. As a semiconductor company and the inventor of flash memory, Toshiba had been one of the top 10 in the chip industry until its flash memory unit was spun off as Toshiba Memory, later Kioxia, in the late 2010s.
CL10B104KB8NNNC
Samsung Electro-mechanics
CL10B104KB8NNNC by Samsung Electro-mechanics is a ceramic capacitor with capacitance of 0.1uF and rated DC voltage of 50V. It has a negative tolerance of 10% and temperature coefficient of 15ppm/°C, suitable for surface mount applications in various electronic devices. With dimensions of 1.6mm x 0.8mm x 0.9mm, it operates b/w -55 to 125 °C providing stable performance in compact designs.
1N4148
Changzhou Galaxy Century Microelectronics
RECTIFIER DIODE; Surface Mount: NO; Config: SINGLE; Peak Reflow Temperature (C): 260; No. of Phases: 1; Diode Element Material: SILICON;
08055C104KAT4A
KYOCERA AVX
08055C104KAT4A by KYOCERA AVX is a ceramic capacitor with 0.1uF capacitance, rated for 50V. With X7R temperature characteristics and -55 to 125 °C operating range, it's ideal for SMT applications requiring compact size and high reliability. The wraparound terminals and multi-layer design make it suitable for various electronic circuits.
NDT2955
Fairchild Semiconductor
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3 W; Package Style (Meter): SMALL OUTLINE; Maximum Drain Current (Abs) (ID): 2.5 A;
FDC5614P
MSKSEMI SEMICONDUCTOR
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Transistor Element Material: SILICON; Minimum DS Breakdown Voltage: 60 V;
M39029/58-360
Conesys
CONNECTOR ACCESSORY; MIL Conformity: YES; Mating Contacts: M39029/57-354; Terminal Type: CRIMP; DIN Conformity: NO; MIL-Connector Accessory Name: CONTACT;
BAV99LT1G
Onsemi
BAV99LT1G by Onsemi is a series connected diode with 2 elements in a small outline package. It has a max reverse recovery time of 0.006 us and can handle up to 100V repetitive peak reverse voltage. Ideal for rectification applications, this diode operates b/w -65°C to 150°C temperature range.
Crimson Semiconductor
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
LL4148
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
SMBJ18CA
Brightking
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
STM32F401CDY6TR
STMicroelectronics
STM32F401CDY6TR by STMicroelectronics is a 32-bit microcontroller with 393216 ROM words, 50 MHz clock frequency, and 36 I/O lines. It is used in applications requiring high-speed processing, such as industrial automation and consumer electronics.
Vishay Intertechnology
Vishay Intertechnology's SMBJ18CA is a bidirectional TRANS VOLTAGE SUPPRESSOR DIODE with a max clamping voltage of 29.2 V and a breakdown voltage of 21.05 V. It is surface mountable and commonly used in transient suppression applications.
MMBT2907ALT1G
MMBT2907ALT1G by Onsemi is a PNP BJT transistor with 100 min hFE, 60V VCEO, and 200MHz fT. Ideal for switching applications, it has a small outline package with Gull Wing terminals and can handle up to 0.6A of collector current.
2N7002
Yangzhou Yangjie Electronics
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 1; Terminal Form: GULL WING; Maximum Drain Current (ID): .34 A;
1N4148WSF-7
Diodes Incorporated
1N4148WSF-7 by Diodes Inc. is a single silicon rectifier diode with max output current of 0.25A and max reverse voltage of 100V. It operates b/w -55 to 150°C, has a small outline package style, and is suitable for surface mount applications in various electronic circuits.
BAV99
Lite-on Semiconductor
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
0462-201-16141
TE Connectivity
TE Connectivity's 0462-201-16141 is a CRIMP terminal with MACHINED contact design. It operates b/w -55 to 125 °C, suitable for wire gauges from 20 to 16 AWG. With a rated current of 13A, it is ideal for applications requiring FEMALE ROUND PIN-SOCKET contacts.
2N2222A
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .8 A; No. of Terminals: 3;
SN65HVD234DR
Texas Instruments
SN65HVD234DR by Texas Instruments is an 8-terminal interface circuit with a data rate of 1 Mbps. Operating temperature ranges from -40 to 125 °C, making it ideal for automotive applications. With a supply voltage of 3.3 V and low current draw of 6 mA, it's suitable for network interfaces in compact designs.
Continental Device India
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .83 W; Package Body Material: PLASTIC/EPOXY; JEDEC-95 Code: TO-236AB;
BF224RLRA
BF224RLRA by Onsemi is a NPN BJT with max. collector-emitter voltage of 30V and max. collector current of 0.05A. Operating at 150 °C, it has fT of 850MHz, suitable for RF applications in very high frequency band due to its cylindrical package style.
BFR93AW-GS08
Vishay Semiconductors
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 6000 MHz; Maximum Collector Current (IC): .05 A; Transistor Element Material: SILICON;
BFR92A
NXP Semiconductors
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 5000 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .025 A;
55GN01CA-TB-E
55GN01CA-TB-E by Onsemi is an NPN BJT transistor with a max fT of 5500 MHz. It has a max IC of 0.07 A and hFE of 100, ideal for amplifier applications in C band frequencies. This small outline package with Gull Wing terminals operates up to 150°C, making it suitable for high-frequency RF designs.
BFP650FH6327XTSA1
Infineon Technologies
RF Small Signal Bipolar Transistors; JESD-609 Code: e3; Moisture Sensitivity Level (MSL): 1; Terminal Finish: TIN;
MPS918G
MPS918G by Onsemi is an NPN BJT transistor with a max. collector-emitter voltage of 15V and fT of 600MHz. Ideal for amplifier applications, it has a max. power dissipation of 0.625W and operates at up to 150 °C. The package style is cylindrical with through-hole terminals, making it suitable for ultra-high frequency band circuits.
MMBTH11
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 650 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .05 A;
FH105A-TR-E
RF Small Signal Bipolar Transistors; Maximum Time At Peak Reflow Temperature (s): 30; JESD-609 Code: e6; Peak Reflow Temperature (C): 260; Terminal Finish: TIN BISMUTH; Moisture Sensitivity Level (MSL): 1;
HFA3102BZ96
Renesas Electronics
HFA3102BZ96 by Renesas Electronics is an NPN RF BJT transistor with 6 elements and 14 terminals. It operates in the ultra-high frequency band up to 10GHz, ideal for amplifier applications. With a max collector-emitter voltage of 8V and a transition frequency of 10,000MHz, it offers high performance in a small outline package.
BFS17PE6433
Siemens
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 2500 MHz; Maximum Collector Current (IC): .025 A; Maximum Collector-Base Capacitance: .8 pF;
2N5090
The Onsemi 2N5090 is an NPN RF BJT with a max. collector-emitter voltage of 30V and max. collector current of 0.4A, ideal for ultra-high frequency band applications. Featuring a silicon transistor element, it has a nominal transition frequency of 500MHz, making it suitable for high-frequency signal amplification in RF circuits. The package style is post/stud mount with a round shape and isolated case connection.
MSC3130T1
MSC3130T1 by Onsemi is a NPN BJT transistor for amplifier applications. It operates in the ultra high frequency band with fT of 1400 MHz. With a max power dissipation of 0.2W and max operating temp of 150 °C, it's ideal for small outline packages requiring high-speed performance.
SD1222-6
NPN; Surface Mount: NO; Transistor Element Material: SILICON;
National Semiconductor
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 660 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .05 A;
BFP840ESDH6327XTSA1
BFP840ESDH6327XTSA1 by Infineon Technologies is a RF Small Signal Bipolar Junction Transistor (BJT) with NPN polarity. It is a single configuration amplifier, suitable for C Band applications. With a max operating temperature of 150°C and a nominal transition frequency of 80 MHz, it offers high performance in a small outline package.
BF240RL1
The Onsemi BF240RL1 is an NPN RF BJT transistor with a max collector-emitter voltage of 40V and fT of 600MHz. Ideal for amplifier applications, it has a max collector current of 0.025A and low capacitance at 0.34pF. The through-hole package style makes it suitable for various electronic designs.
AT-41511-TR1G
Broadcom
AT-41511-TR1G by Broadcom is an NPN RF BJT transistor with a max fT of 10GHz. It is designed for amplifier applications in the C band, featuring a collector-emitter voltage of 12V and a max power dissipation of 0.225W. This surface-mount transistor has a small outline package with Gull Wing terminals, making it suitable for high-frequency circuit designs.
MPS3563RLRP
MPS3563RLRP by Onsemi is an NPN RF BJT transistor with a max fT of 600 MHz. It operates at up to 150 °C, has a Vceo of 12V, and IC of 0.05A. Ideal for ultra-high frequency amplifier applications due to its low collector-base capacitance and single configuration in a cylindrical package.
BFG67/X,215
NXP Semiconductors' BFG67/X,215 is a NPN RF BJT transistor with 4 terminals. It operates in L Band with fT of 8000 MHz and hFE of 60. Ideal for amplifier applications, it has a max power dissipation of 0.3 W and can handle up to 10 V collector-emitter voltage.
BF495
Micro Electronics
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .03 A;
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2SC3838KT146P
ROHM
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 3200 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .05 A;
2SC3098TE85L
Toshiba
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 3500 MHz; Maximum Collector Current (IC): .05 A; Qualification: Not Qualified;
2SC3122TE85R
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 650 MHz; Maximum Collector Current (IC): .02 A; Transistor Application: AMPLIFIER;
2SC3120
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 2400 MHz; Maximum Collector Current (IC): .05 A; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND;
2SC3122
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 650 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .02 A;
2SC3099(TE85L,F)
RF Small Signal Bipolar Transistors;
2SC3011TE85L
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 6500 MHz; Maximum Collector Current (IC): .03 A; Package Body Material: PLASTIC/EPOXY;
2SC3098TE85R
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 3500 MHz; Maximum Collector Current (IC): .05 A; Minimum DC Current Gain (hFE): 30;
2SC3120TE85L
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 2400 MHz; Maximum Collector Current (IC): .05 A; Transistor Element Material: SILICON;
2SC3120TE85R
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 2400 MHz; Maximum Collector Current (IC): .05 A; Maximum Collector-Base Capacitance: .9 pF;
2SC3121TE85R
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 1500 MHz; Maximum Collector Current (IC): .05 A; Terminal Position: DUAL;
2SC3099TE85L
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 4000 MHz; Maximum Collector Current (IC): .03 A; Terminal Finish: TIN LEAD;
2SC3122TE85L
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 650 MHz; Maximum Collector Current (IC): .02 A; Qualification: Not Qualified;
2SC3098
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 3500 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .05 A;
2SC3121
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 1500 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .025 A;
2SC3099TE85R
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 4000 MHz; Maximum Collector Current (IC): .03 A; No. of Elements: 1;
2SC3011
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 6500 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .03 A;
2SC3011TE85R
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 6500 MHz; Maximum Collector Current (IC): .03 A; Maximum Collector-Emitter Voltage: 7 V;
2SC3099
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 4000 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .03 A;
2SC3130TSK
Panasonic
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 1900 MHz; Maximum Collector Current (IC): .05 A; Maximum Operating Temperature: 150 Cel;
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