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XINA851RGTR

Texas Instruments

XINA851RGTR by Texas Instruments

XINA851RGTR by Texas Instruments is an instrumentation amplifier with a max input offset voltage of 35uV and max bias current of 0.02uA. With a nominal voltage of 15V, it offers a bandwidth of 22MHz, making it ideal for precision measurement applications requiring high gain and low noise. This surface-mount chip carrier package has 16 terminals and operates within a temperature range of -40 to 85°C.

Median Price

$3.990

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 50 parts In-Stock

1+ parts

$3.990

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50

$3.990

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Vyrian

USA . 5,268 parts In-Stock

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5,268

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Digiode

USA . 1,201 parts In-Stock

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1,201

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Advanced Electronics

New Zealand . 40 parts In-Stock

1+ parts

$2.456

100+ parts

$2.333

1k+ parts

$2.333

10k+ parts

-

40

$2.456

$2.333

$2.333

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Ampacity Inc.

Singapore . 491 parts In-Stock

1+ parts

$3.410

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491

$3.410

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Aranea Global

USA . 100 parts In-Stock

1+ parts

$3.910

100+ parts

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$3.754

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100

$3.910

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$3.754

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Continental Prestige Electronics

USA . 5,964 parts In-Stock

1+ parts

$3.990

100+ parts

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$3.910

5,964

$3.990

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$3.910

Argo Parts USA

USA . 390 parts In-Stock

1+ parts

$3.990

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390

$3.990

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Parana Technologies

USA . 6 parts In-Stock

1+ parts

$4.219

100+ parts

$391.761

1k+ parts

$3.797

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6

$4.219

$391.761

$3.797

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One Stop Electronics

USA . 1,105 parts In-Stock

1+ parts

$4.410

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1,105

$4.410

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DigiPath Technology Company

USA . 2,316 parts In-Stock

1+ parts

$4.645

100+ parts

$4.274

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2,316

$4.645

$4.274

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ChromeModa Solutions

Germany . 5,128 parts In-Stock

1+ parts

$4.740

100+ parts

$3.887

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5,128

$4.740

$3.887

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IDEA Electronic Components Group

UK . 352 parts In-Stock

1+ parts

$4.740

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$4.266

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352

$4.740

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$4.266

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AZTECH Wire

Italy . 614 parts In-Stock

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$6.432

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614

$6.432

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Corohmni

South Africa . 255 parts In-Stock

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$7.358

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$7.358

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Semicontronic

India . 889 parts In-Stock

1+ parts

$9.410

100+ parts

$9.175

1k+ parts

$9.128

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889

$9.410

$9.175

$9.128

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Corphita

USA . 1,508 parts In-Stock

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1,508

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Overview

Discover the unmatched quality and precision of the XINA851RGTR by Texas Instruments, a leading manufacturer in the industry. This instrumentation amplifier offers unparalleled performance in a compact package, making it perfect for a wide range of applications. From medical devices to industrial machinery, this versatile product delivers reliable results with minimal bias current and maximum voltage gain. Trust Texas Instruments to provide you with cutting-edge technology that exceeds your expectations. Elevate your projects with the XINA851RGTR and experience the difference today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable, ideal for portable applications.

Maximum Input Offset Voltage: 35 uV

Low input offset voltage ensures accurate measurement and reduces errors in the output signal.

Maximum Average Bias Current (IIB): 0.02 uA

Low bias current helps in maintaining stable and consistent performance of the instrumentation amplifier.

Surface Mount: YES

Surface mount packaging simplifies the assembly process and saves space on the PCB.

Nominal Supply Voltage / Vsup (V): 15

Suitable nominal supply voltage for various applications, providing flexibility in design.

Maximum Input Offset Current (IIO): 0.006 uA

Low input offset current minimizes errors in the output signal and ensures high precision in measurements.

Maximum Non Linearity: 0.0002 %

Low non-linearity ensures accurate amplification of input signals with minimal distortion.

Maximum Operating Temperature: 85 °C

Wide operating temperature range allows the amplifier to function effectively in various environmental conditions.

Maximum Bias Current (IIB) @25°C: 0.02 uA

Stable bias current at 25°C ensures consistent performance of the instrumentation amplifier under different operating conditions.

Minimum Voltage Gain: 0.2

Low minimum voltage gain allows for amplification of small input signals, making it suitable for low-level signal processing applications.

Nominal Bandwidth (3dB): 22 MHz

Wide bandwidth ensures high-frequency signal amplification with minimal distortion, suitable for applications requiring fast signal processing.

Maximum Supply Current: 9 mA

Low supply current consumption helps in reducing power consumption and extends the operational life of the product.

Technical Specifications

Instrumentation Amplifiers XINA851RGTR attributes and parameters. Explore more Instrumentation Amplifiers devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Total Functions:

1

Performance Specifications

Nominal Bandwidth (3dB):

22 MHz

Nominal Slew Rate:

37 V/us

Minimum Common Mode Rejection Ratio (CMRR ):

120 dB

Input Offset Voltage Limit:

35 µV

Peak Bias Current:

20 nA

Maximum Bias Current (IIB) @25 °C:

20 nA

Maximum Supply Current:

9 mA

Minimum Voltage Gain:

0.2

Nominal Voltage Gain:

1

Maximum Voltage Gain:

1000

Maximum Non Linearity:

0.0002 %

Maximum Input Offset Current (IIO):

6 nA

Operational Characteristics

Nominal Supply Voltage:

15 V

Maximum Supply Voltage:

20 V

Nominal Negative Supply Voltage (Vsup):

-15 V

Maximum Negative Supply Voltage:

-20 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

85 °C (185 °F)

Physical Characteristics

Length:

0.118 in (3 mm)

Width:

0.118 in (3 mm)

Maximum Seated Height:

0.039 in (1 mm)

Total Terminals:

16

Terminal Pitch:

0.02 in (0.5 mm)

Terminal Position:

Quad

Terminal Form:

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Standards

JESD-30 Code:

S-PQCC-N16

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

Package Shape:

Package Style:

Chip Carrier, Heat Sink/Slug, Very Thin Profile

Package Equivalence Code:

LCC16,.12SQ,20

Trade Compliance

XINA851RGTR Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

Category top products 20

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