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INA2322EA/250G4

Texas Instruments

INA2322EA/250G4 by Texas Instruments

INA2322EA/250G4 by Texas Instruments is a CMOS instrumentation amplifier with 11000uV max input offset voltage and 0.00001uA max average bias current. Ideal for industrial applications, it offers a nominal bandwidth of 0.5MHz and operates in temperatures ranging from -40 to 85 °C.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Digiode

USA . 4,114 parts In-Stock

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Vyrian

USA . 3,587 parts In-Stock

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Nova Conductors

Japan . 36 parts In-Stock

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Semicontronic

India . 983 parts In-Stock

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$0.410

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$0.400

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$0.398

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983

$0.410

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$0.398

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Ampacity Inc.

Singapore . 1,421 parts In-Stock

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$3.410

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One Stop Electronics

USA . 1,010 parts In-Stock

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$3.410

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Parana Technologies

USA . 197 parts In-Stock

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$4.321

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$4.743

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DigiPath Technology Company

USA . 1,562 parts In-Stock

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$4.758

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$4.377

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ChromeModa Solutions

Germany . 2,852 parts In-Stock

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$4.855

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$3.981

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IDEA Electronic Components Group

UK . 87 parts In-Stock

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$4.855

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$4.370

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Corohmni

South Africa . 970 parts In-Stock

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$6.616

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AZTECH Wire

Italy . 787 parts In-Stock

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Continental Prestige Electronics

USA . 5,279 parts In-Stock

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Microchip USA

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Advanced Electronics

New Zealand . 4,974 parts In-Stock

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Argo Parts USA

USA . 4,757 parts In-Stock

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Corphita

USA . 1,590 parts In-Stock

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Robosynatics

Brazil . 950 parts In-Stock

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Lucentia Tech

USA . 950 parts In-Stock

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Bastille Electronics

Australia . 300 parts In-Stock

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Overview

Enhance your instrumentation amplifier needs with the Texas Instruments INA2322EA/250G4. With a reputation for superior quality and reliability, Texas Instruments offers a wide range of applications in the instrumentation amplifiers category. This product provides customers with exceptional value, benefits, and advantages, making it a top choice for professionals seeking precision and performance. Upgrade your projects with the trusted brand that delivers on excellence every time.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is lightweight and durable, making the product easy to handle and resistant to damage.

Maximum Input Offset Voltage: 11000 uV

High input offset voltage allows for accurate measurement and minimal error in signal processing.

Maximum Average Bias Current (IIB): 0.00001 uA

Low bias current ensures minimal power consumption and accurate signal amplification.

Surface Mount: YES

Surface mount technology allows for easy and convenient installation on circuit boards.

No. of Functions: 2

Having multiple functions in one device saves space and simplifies circuit design.

Nominal Supply Voltage / Vsup (V): 5

Standard supply voltage of 5V makes it compatible with a wide range of systems.

Maximum Input Offset Current (IIO): 0.0001 uA

Low input offset current ensures accurate signal amplification and minimal distortion.

Maximum Non Linearity: 0.015 %

Low non-linearity ensures accurate signal amplification and faithful representation of input signals.

Maximum Supply Voltage Limit: 7.5 V

High supply voltage limit provides flexibility and reliability in various operating conditions.

Maximum Operating Temperature: 85 °C

Wide operating temperature range allows for use in different environments without performance degradation.

Minimum Common Mode Reject Ratio: 60 dB

High common mode rejection ratio ensures accurate amplification of differential signals.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity for reliable performance.

Amplifier Type: INSTRUMENTATION AMPLIFIER

Specifically designed for precise and accurate measurement applications, making it a reliable choice for instrumentation.

Technical Specifications

Instrumentation Amplifiers INA2322EA/250G4 attributes and parameters. Explore more Instrumentation Amplifiers devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Technology:

CMOS

Power Supply:

3/5 V

Total Functions:

2

Sub-Category:

Instrumentation Amplifiers

Performance Specifications

Nominal Bandwidth (3dB):

500 kHz

Minimum Common Mode Rejection Ratio (CMRR ):

60 dB

Input Offset Voltage Limit:

11 mV

Peak Bias Current:

10 pA

Minimum Voltage Gain:

5

Nominal Voltage Gain:

25

Maximum Voltage Gain:

1000

Maximum Non Linearity:

0.015 %

Maximum Input Offset Current (IIO):

100 pA

Operational Characteristics

Nominal Supply Voltage:

5 V

Maximum Supply Voltage:

7.5 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

85 °C (185 °F)

Reflow Peak Time Limit:

30 s

Peak Reflow Temperature:

260 °C (500 °F)

Physical Characteristics

Length:

0.197 in (5 mm)

Width:

0.173 in (4.4 mm)

Maximum Seated Height:

0.047 in (1.2 mm)

Total Terminals:

14

Terminal Pitch:

0.026 in (0.65 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel Palladium Gold

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

2

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G14

JESD-609 Code:

e4

Packaging and Shipping

Package Code:

Package Shape:

Package Style:

Small Outline, Thin Profile, Shrink Pitch

Package Equivalence Code:

TSSOP14,.25

Trade Compliance

INA2322EA/250G4 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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