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INA2321EA/2K5G4

Texas Instruments

INA2321EA/2K5G4 by Texas Instruments

The Texas Instruments INA2321EA/2K5G4 is a CMOS instrumentation amplifier with 14 terminals and a supply voltage of 3-5V. It features low input offset voltage of 2500uV, ultra-low bias current of 0.00001uA, and high gain up to 1000x. Ideal for military applications due to its wide temperature range (-55 to 125 °C) and small form factor (5x4.4mm).

Median Price

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Lifecycle Status

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4

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1k+

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Adafruit Industries

USA . 975 parts In-Stock

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Vyrian

USA . 3,020 parts In-Stock

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Digiode

USA . 2,166 parts In-Stock

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Nova Conductors

Japan . 50 parts In-Stock

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Corohmni

South Africa . 110 parts In-Stock

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$1.562

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Parana Technologies

USA . 614 parts In-Stock

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$5.034

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$5.593

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DigiPath Technology Company

USA . 1,146 parts In-Stock

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$5.543

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ChromeModa Solutions

Germany . 878 parts In-Stock

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$5.656

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$4.638

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IDEA Electronic Components Group

UK . 682 parts In-Stock

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$5.090

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Semicontronic

India . 886 parts In-Stock

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$6.410

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$6.250

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AZTECH Wire

Italy . 278 parts In-Stock

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Ampacity Inc.

Singapore . 791 parts In-Stock

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Argo Parts USA

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Corphita

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Advanced Electronics

New Zealand . 975 parts In-Stock

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Bastille Electronics

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Continental Prestige Electronics

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Robosynatics

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Lucentia Tech

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Overview

Elevate your instrumentation amplifier needs with the INA2321EA/2K5G4 by Texas Instruments. Renowned for their high-quality components, Texas Instruments delivers reliability and precision in every product. The INA2321EA/2K5G4 is perfect for a wide range of applications, providing customers with unmatched accuracy and performance. Experience the value and benefits of this exceptional amplifier, offering superior quality and functionality that sets it apart from the rest. Trust Texas Instruments for all your instrumentation amplifier needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides a lightweight and durable housing for the instrumentation amplifier, making it suitable for various applications.

Maximum Input Offset Voltage: 2500 uV

Low input offset voltage ensures high accuracy in signal amplification and measurement.

Maximum Average Bias Current (IIB): 0.00001 uA

Low bias current reduces energy consumption and minimizes errors in signal processing.

No. of Functions: 2

Having multiple functions allows for versatile use of the instrumentation amplifier in different circuit configurations.

Nominal Supply Voltage / Vsup (V): 5

Stable supply voltage of 5V ensures consistent performance of the amplifier in various operating conditions.

Maximum Non Linearity: 0.015 %

Low non-linearity ensures accurate signal amplification and measurement without distortion.

Technology: CMOS

CMOS technology offers low power consumption and high reliability, making the amplifier suitable for battery-powered and portable devices.

Minimum Voltage Gain: 5

Having a minimum voltage gain of 5 allows for amplification of weak signals while maintaining stability in the output.

Maximum Operating Temperature: 125 °C

High operating temperature range makes the amplifier suitable for use in harsh environments without compromising performance.

Nominal Bandwidth (3dB): 0.5 MHz

Wide bandwidth ensures the amplifier can accurately amplify a range of frequency signals.

Technical Specifications

Instrumentation Amplifiers INA2321EA/2K5G4 attributes and parameters. Explore more Instrumentation Amplifiers devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Technology:

CMOS

Power Supply:

3/5 V

Total Functions:

2

Sub-Category:

Instrumentation Amplifiers

Performance Specifications

Nominal Bandwidth (3dB):

500 kHz

Nominal Slew Rate:

0.4 V/us

Minimum Common Mode Rejection Ratio (CMRR ):

75 dB

Input Offset Voltage Limit:

2.5 mV

Peak Bias Current:

10 pA

Maximum Supply Current:

140 μA

Minimum Voltage Gain:

5

Nominal Voltage Gain:

25

Maximum Voltage Gain:

1000

Maximum Non Linearity:

0.015 %

Maximum Input Offset Current (IIO):

10 pA

Operational Characteristics

Nominal Supply Voltage:

5 V

Maximum Supply Voltage:

7.5 V

Lowest Operating Temperature:

-55 °C (-67 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Reflow Peak Time Limit:

30 s

Peak Reflow Temperature:

260 °C (500 °F)

Physical Characteristics

Length:

0.197 in (5 mm)

Width:

0.173 in (4.4 mm)

Maximum Seated Height:

0.047 in (1.2 mm)

Total Terminals:

14

Terminal Pitch:

0.026 in (0.65 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Nickel Palladium Gold

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

1

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

R-PDSO-G14

JESD-609 Code:

e4

Packaging and Shipping

Package Code:

Package Shape:

Package Style:

Small Outline, Thin Profile, Shrink Pitch

Package Equivalence Code:

TSSOP14,.25

Trade Compliance

INA2321EA/2K5G4 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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