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XINA819IDGKT

Texas Instruments

XINA819IDGKT by Texas Instruments

XINA819IDGKT by Texas Instruments is an instrumentation amplifier with a max input offset voltage of 95uV and max average bias current of 0.002uA. It operates at a nominal voltage of 15V, has a bandwidth of 2MHz, and is suitable for automotive applications due to its temperature grade.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,574 parts In-Stock

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Digiode

USA . 2,923 parts In-Stock

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2,923

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Nova Conductors

Japan . 100 parts In-Stock

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100

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Distributors (Availability)

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Corohmni

South Africa . 250 parts In-Stock

1+ parts

$0.832

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250

$0.832

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Advanced Electronics

New Zealand . 500 parts In-Stock

1+ parts

$1.268

100+ parts

$1.205

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$1.205

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500

$1.268

$1.205

$1.205

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One Stop Electronics

USA . 740 parts In-Stock

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$1.410

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740

$1.410

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Parana Technologies

USA . 2,014 parts In-Stock

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$2.471

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$229.436

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$2.224

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2,014

$2.471

$229.436

$2.224

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DigiPath Technology Company

USA . 1,136 parts In-Stock

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$2.720

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$2.720

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ChromeModa Solutions

Germany . 4,858 parts In-Stock

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$2.776

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$2.276

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$2.776

$2.276

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IDEA Electronic Components Group

UK . 1,002 parts In-Stock

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$2.776

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$2.498

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1,002

$2.776

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$2.498

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Semicontronic

India . 471 parts In-Stock

1+ parts

$3.410

100+ parts

$3.325

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$3.308

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471

$3.410

$3.325

$3.308

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Ampacity Inc.

Singapore . 1,063 parts In-Stock

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$4.410

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1,063

$4.410

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AZTECH Wire

Italy . 402 parts In-Stock

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$14.033

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Argo Parts USA

USA . 3,782 parts In-Stock

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Continental Prestige Electronics

USA . 1,728 parts In-Stock

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Corphita

USA . 1,091 parts In-Stock

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Bastille Electronics

Australia . 300 parts In-Stock

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Overview

Enhance your electronic designs with the XINA819IDGKT instrumentation amplifier by Texas Instruments. With a reputation for producing top-quality components, Texas Instruments delivers a product that exceeds expectations in precision and performance. Ideal for automotive applications, this small but powerful amplifier offers unmatched value with its high voltage gain, low offset voltage, and wide operating temperature range. Trust Texas Instruments to provide the innovative solutions you need for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and resistance to environmental factors, making the product suitable for various applications.

Maximum Input Offset Voltage: 95 uV

Low input offset voltage ensures accurate signal processing and minimizes errors in measurements.

No. of Terminals: 8

Having 8 terminals allows for flexible connectivity and integration within different systems.

Maximum Supply Voltage Limit: 20 V

High supply voltage limit offers versatility and compatibility with a wide range of power sources.

Nominal Bandwidth (3dB): 2 MHz

Wide bandwidth of 2 MHz enables high-speed signal processing and data transmission.

Temperature Grade: AUTOMOTIVE

Automotive grade ensures reliability and stability in harsh operating conditions, making it suitable for automotive applications.

Amplifier Type: INSTRUMENTATION AMPLIFIER

Being an instrumentation amplifier, this product provides high accuracy and precision in measuring small differential signals.

Technical Specifications

Instrumentation Amplifiers XINA819IDGKT attributes and parameters. Explore more Instrumentation Amplifiers devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Total Functions:

1

Sub-Category:

Instrumentation Amplifiers

Performance Specifications

Nominal Bandwidth (3dB):

2 MHz

Nominal Slew Rate:

0.9 V/us

Minimum Common Mode Rejection Ratio (CMRR ):

90 dB

Input Offset Voltage Limit:

95 µV

Peak Bias Current:

2 nA

Minimum Voltage Gain:

1

Maximum Voltage Gain:

1000

Maximum Non Linearity:

0.0015 %

Maximum Input Offset Current (IIO):

2 nA

Operational Characteristics

Nominal Supply Voltage:

15 V

Maximum Supply Voltage:

20 V

Nominal Negative Supply Voltage (Vsup):

-15 V

Maximum Negative Supply Voltage:

-20 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Physical Characteristics

Length:

0.118 in (3 mm)

Width:

0.118 in (3 mm)

Maximum Seated Height:

0.043 in (1.1 mm)

Total Terminals:

8

Terminal Pitch:

0.026 in (0.65 mm)

Terminal Position:

Dual

Terminal Form:

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Temperature Grade:

Standards

JESD-30 Code:

S-PDSO-G8

Packaging and Shipping

Package Code:

Package Shape:

Package Style:

Small Outline, Thin Profile, Shrink Pitch

Trade Compliance

XINA819IDGKT Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

Category top products 20

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