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XINA849DGKR

Texas Instruments

XINA849DGKR by Texas Instruments

XINA849DGKR by Texas Instruments is an instrumentation amplifier with 75uV max input offset voltage, 28MHz nominal bandwidth, and 10000 max voltage gain. Ideal for automotive applications due to its -40 to 125 °C operating temperature range and high common mode reject ratio of 120 dB.

Median Price

-

Lifecycle Status

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3

In-Stock Inventory

1k+

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Vyrian

USA . 3,713 parts In-Stock

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Digiode

USA . 3,635 parts In-Stock

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Nova Conductors

Japan . 46 parts In-Stock

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46

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Distributors (Availability)

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Semicontronic

India . 950 parts In-Stock

1+ parts

$0.410

100+ parts

$0.400

1k+ parts

$0.398

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950

$0.410

$0.400

$0.398

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Ampacity Inc.

Singapore . 508 parts In-Stock

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$2.410

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508

$2.410

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Parana Technologies

USA . 555 parts In-Stock

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$4.606

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$427.714

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$4.145

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555

$4.606

$427.714

$4.145

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Corohmni

South Africa . 51 parts In-Stock

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$4.673

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51

$4.673

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DigiPath Technology Company

USA . 1,985 parts In-Stock

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$5.072

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$5.072

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ChromeModa Solutions

Germany . 3,259 parts In-Stock

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$5.175

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$4.244

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$5.175

$4.244

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IDEA Electronic Components Group

UK . 1,697 parts In-Stock

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$5.175

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$4.658

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$5.175

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Advanced Electronics

New Zealand . 900 parts In-Stock

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$6.121

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$5.815

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$5.815

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900

$6.121

$5.815

$5.815

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One Stop Electronics

USA . 264 parts In-Stock

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$8.410

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264

$8.410

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AZTECH Wire

Italy . 836 parts In-Stock

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$12.898

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Continental Prestige Electronics

USA . 6,276 parts In-Stock

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Argo Parts USA

USA . 3,660 parts In-Stock

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Corphita

USA . 2,864 parts In-Stock

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Modulus Dynamics

Lithuania . 900 parts In-Stock

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Robosynatics

Brazil . 500 parts In-Stock

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Lucentia Tech

USA . 500 parts In-Stock

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$17.105

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$17.105

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$17.105

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Bastille Electronics

Australia . 58 parts In-Stock

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Overview

Elevate your instrumentation amplification needs with the XINA849DGKR by Texas Instruments. Known for their top-notch quality and reliability, Texas Instruments delivers once again with this state-of-the-art amplifier. Perfect for a wide range of applications, this small outline, thin profile, shrink pitch package offers unmatched performance with a nominal bandwidth of 28 MHz and a maximum voltage gain of 10,000. Say goodbye to common mode interference with a minimum common mode reject ratio of 120 dB. Experience seamless operation in automotive environments with a temperature grade of AUTOMOTIVE and a maximum operating temperature of 125°C. Trust in Texas Instruments to provide you with the best in instrumentation amplifiers, and choose the XINA849DGKR for unparalleled precision and value.

Feature Benefit Bullets

Package Body Material:

PLASTIC/EPOXY - This material provides durability and protection for the amplifier, making it a reliable choice.

Maximum Input Offset Voltage:

75 uV - The low input offset voltage ensures accurate signal processing, making this amplifier suitable for precision applications.

Maximum Average Bias Current (IIB):

0.02 uA - The low bias current helps minimize errors in the output signal, making this amplifier highly accurate.

Surface Mount:

YES - The surface mount design saves space and makes installation easier, ideal for applications with limited space.

Package Shape:

SQUARE - The compact square shape allows for easy integration into circuit boards, making this amplifier suitable for tight spaces.

Nominal Supply Voltage / Vsup (V):

15 - The nominal supply voltage of 15V provides enough power for the amplifier to operate efficiently.

No. of Terminals:

8 - With 8 terminals, this amplifier offers flexibility in connectivity options for various applications.

Maximum Input Offset Current (IIO):

0.006 uA - The low input offset current reduces errors in the output signal, ensuring accurate performance.

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH - The compact and slim design of the package saves space and allows for easy integration into systems.

Maximum Non Linearity:

0.001 % - The low non-linearity ensures accurate signal processing, making this amplifier suitable for high-precision applications.

Maximum Supply Voltage Limit:

20 V - The high supply voltage limit provides flexibility in power supply options for the amplifier.

Maximum Operating Temperature:

125 °C - The wide operating temperature range makes this amplifier suitable for use in various environmental conditions.

Minimum Operating Temperature:

40 °C - The low minimum operating temperature ensures the amplifier can function in cold environments.

Terminal Position:

DUAL - The dual terminal position allows for easy connection to external circuitry, enhancing the amplifier's usability.

Maximum Voltage Gain:

10000 - The high voltage gain capability of this amplifier makes it suitable for amplifying weak signals.

Maximum Seated Height:

1.1 mm - The low seated height allows for easy installation in compact spaces, making this amplifier versatile.

Width:

3 mm - The narrow width of the amplifier saves space on circuit boards, ideal for applications with limited real estate.

Nominal Bandwidth (3dB):

28 MHz - The wide bandwidth ensures the amplifier can process a wide range of frequencies accurately.

Length:

3 mm - The short length of the amplifier allows for efficient use of space on circuit boards, making it a good choice for compact designs.

Temperature Grade:

AUTOMOTIVE - The automotive-grade temperature rating ensures the amplifier can withstand harsh environmental conditions, making it suitable for automotive applications.

Maximum Negative Supply Voltage Limit:

20 V - The high negative supply voltage limit provides flexibility in power supply options for the amplifier.

Minimum Common Mode Reject Ratio:

120 dB - The high common mode reject ratio helps minimize noise interference, ensuring clean signal output.

Terminal Form:

GULL WING - The gull-wing terminal form simplifies soldering and enhances the reliability of connections, making this amplifier easy to work with.

Amplifier Type:

INSTRUMENTATION AMPLIFIER - The instrumentation amplifier design provides high accuracy and stability in signal processing, making it ideal for precision measurements.

Nominal Negative Supply Voltage (Vsup):

15 V - The nominal negative supply voltage ensures proper biasing for the amplifier to operate effectively.

Packing Method:

TR - The tape and reel packing method facilitates automated assembly processes, making this amplifier suitable for mass production.

Nominal Slow Rate:

35 V/us - The high slew rate allows the amplifier to respond quickly to input signal changes, making it suitable for dynamic applications.

Terminal Pitch:

0.65 mm - The small terminal pitch provides flexibility in connecting external components, enhancing the amplifier's versatility.

Nominal Voltage Gain:

10 - The moderate voltage gain capability of this amplifier makes it suitable for a wide range of signal amplification applications.

Technical Specifications

Instrumentation Amplifiers XINA849DGKR attributes and parameters. Explore more Instrumentation Amplifiers devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Total Functions:

1

Sub-Category:

Instrumentation Amplifiers

Performance Specifications

Nominal Bandwidth (3dB):

28 MHz

Nominal Slew Rate:

35 V/us

Minimum Common Mode Rejection Ratio (CMRR ):

120 dB

Input Offset Voltage Limit:

75 µV

Peak Bias Current:

20 nA

Minimum Voltage Gain:

1

Nominal Voltage Gain:

10

Maximum Voltage Gain:

10000

Maximum Non Linearity:

0.001 %

Maximum Input Offset Current (IIO):

6 nA

Operational Characteristics

Nominal Supply Voltage:

15 V

Maximum Supply Voltage:

20 V

Nominal Negative Supply Voltage (Vsup):

-15 V

Maximum Negative Supply Voltage:

-20 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Physical Characteristics

Length:

0.118 in (3 mm)

Width:

0.118 in (3 mm)

Maximum Seated Height:

0.043 in (1.1 mm)

Total Terminals:

8

Terminal Pitch:

0.026 in (0.65 mm)

Terminal Position:

Dual

Terminal Form:

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Temperature Grade:

Standards

JESD-30 Code:

S-PDSO-G8

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

Package Shape:

Package Style:

Small Outline, Thin Profile, Shrink Pitch

Package Equivalence Code:

TSSOP8,.25

Trade Compliance

XINA849DGKR Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

Category top products 20

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