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XINA823DR

Texas Instruments

XINA823DR by Texas Instruments

XINA823DR by Texas Instruments is an instrumentation amplifier with a max input offset voltage of 190uV and max average bias current of 0.01uA. It has a nominal voltage of 15V, making it suitable for precision signal amplification in applications requiring high accuracy and low power consumption. The small outline package with dual terminals and gull wing form factor makes it ideal for compact designs where space is limited.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,556 parts In-Stock

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6,556

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Digiode

USA . 3,664 parts In-Stock

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3,664

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Nova Conductors

Japan . 10 parts In-Stock

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10

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Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Semicontronic

India . 1,604 parts In-Stock

1+ parts

$2.410

100+ parts

$2.350

1k+ parts

$2.338

10k+ parts

-

1,604

$2.410

$2.350

$2.338

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Ampacity Inc.

Singapore . 421 parts In-Stock

1+ parts

$2.410

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421

$2.410

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Parana Technologies

USA . 2,210 parts In-Stock

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$2.569

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$3.058

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2,210

$2.569

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$3.058

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Corohmni

South Africa . 108 parts In-Stock

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$2.589

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108

$2.589

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ChromeModa Solutions

Germany . 4,594 parts In-Stock

1+ parts

$2.886

100+ parts

$2.367

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4,594

$2.886

$2.367

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IDEA Electronic Components Group

UK . 893 parts In-Stock

1+ parts

$2.886

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$2.597

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893

$2.886

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$2.597

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Advanced Electronics

New Zealand . 5,000 parts In-Stock

1+ parts

$4.580

100+ parts

$4.351

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$4.351

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5,000

$4.580

$4.351

$4.351

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One Stop Electronics

USA . 611 parts In-Stock

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$7.410

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611

$7.410

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AZTECH Wire

Italy . 416 parts In-Stock

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$9.584

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416

$9.584

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Continental Prestige Electronics

USA . 5,391 parts In-Stock

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Corphita

USA . 4,841 parts In-Stock

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Modulus Dynamics

Lithuania . 650 parts In-Stock

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650

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DigiPath Technology Company

USA . 647 parts In-Stock

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$2.602

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647

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$2.602

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Argo Parts USA

USA . 436 parts In-Stock

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436

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Bastille Electronics

Australia . 67 parts In-Stock

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Robosynatics

Brazil . 10 parts In-Stock

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Lucentia Tech

USA . 10 parts In-Stock

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$5.731

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$5.731

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$5.731

10

-

$5.731

$5.731

$5.731

Overview

Experience unparalleled precision and performance with the XINA823DR by Texas Instruments. As a leading manufacturer in the industry, this instrumentation amplifier offers exceptional quality and reliability. Ideal for a wide range of applications, this product provides customers with unmatched value and benefits. From its compact design to its impressive maximum voltage gain of 1000, the XINA823DR delivers superior results with minimal bias current and non-linearity. Trust Texas Instruments to elevate your projects with cutting-edge technology and innovative solutions.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring a long lifespan for the product.

Maximum Input Offset Voltage: 190 uV

Low input offset voltage ensures accurate signal processing and minimal distortion.

Surface Mount: YES

Easy installation and PCB integration in compact spaces.

Nominal Supply Voltage / Vsup (V): 15

Optimal supply voltage for stable performance and efficiency.

Nominal Bandwidth (3dB): 1.9 MHz

Wide bandwidth allows for high-frequency signal processing and quick response times.

Maximum Common Mode Reject Ratio: 120 dB

High common mode rejection ratio reduces noise interference and improves signal accuracy.

Maximum Voltage Gain: 1000

High voltage gain amplification capabilities for precise signal amplification.

Maximum Operating Temperature: 125 °C

Wide operating temperature range for versatile use in various environments.

Technical Specifications

Instrumentation Amplifiers XINA823DR attributes and parameters. Explore more Instrumentation Amplifiers devices from Texas Instruments

Amplifier Characteristics

Amplifier Type:

Total Functions:

1

Performance Specifications

Nominal Bandwidth (3dB):

1.9 MHz

Nominal Slew Rate:

1 V/us

Minimum Common Mode Rejection Ratio (CMRR ):

120 dB

Input Offset Voltage Limit:

190 µV

Peak Bias Current:

10 nA

Maximum Bias Current (IIB) @25 °C:

8 nA

Maximum Supply Current:

300 μA

Minimum Voltage Gain:

1

Nominal Voltage Gain:

10

Maximum Voltage Gain:

1000

Maximum Non Linearity:

0.001 %

Maximum Input Offset Current (IIO):

5 nA

Operational Characteristics

Nominal Supply Voltage:

15 V

Maximum Supply Voltage:

20 V

Nominal Negative Supply Voltage (Vsup):

-15 V

Maximum Negative Supply Voltage:

-20 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

125 °C (257 °F)

Physical Characteristics

Length:

0.193 in (4.905 mm)

Width:

0.153 in (3.895 mm)

Maximum Seated Height:

0.069 in (1.75 mm)

Total Terminals:

8

Terminal Pitch:

0.05 in (1.27 mm)

Terminal Position:

Dual

Terminal Form:

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Standards

JESD-30 Code:

R-PDSO-G8

Packaging and Shipping

Package Code:

SOP

Package Shape:

Package Style:

Small Outline

Trade Compliance

XINA823DR Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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